公开(公告)号：US20060110867A1

公开(公告)日：2006-05-25

申请号：US11269641

申请日：2005-11-09

申请人： Hisato Yabuta ,  Masafumi Sano ,  Tatsuya Iwasaki ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

发明人： Hisato Yabuta ,  Masafumi Sano ,  Tatsuya Iwasaki ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

IPC分类号： H01L21/84

CPC分类号： H01L29/78618 ,  H01L29/66969 ,  H01L29/78693

摘要： Provided is a novel method for manufacturing a field effect transistor. Prior to forming an amorphous oxide layer on a substrate, ultraviolet rays are irradiated onto the substrate surface in an ozone atmosphere, plasma is irradiated onto the substrate surface, or the substrate surface is cleaned by a chemical solution containing hydrogen peroxide.

摘要翻译： 提供一种用于制造场效应晶体管的新颖方法。 在基板上形成无定形氧化物层之前，在臭氧气氛中将紫外线照射到基板表面上，将等离子体照射到基板表面上，或者通过含有过氧化氢的化学溶液清洁基板表面。

公开(公告)号：US20060019171A1

公开(公告)日：2006-01-26

申请号：US10504634

申请日：2003-02-13

申请人： Hideo Hosono ,  Masahiro Hirano ,  Kenichi Kawamura ,  Taisuke Miura ,  Hayato Kamioka

发明人： Hideo Hosono ,  Masahiro Hirano ,  Kenichi Kawamura ,  Taisuke Miura ,  Hayato Kamioka

IPC分类号： G03H1/04

CPC分类号： G02B5/1857 ,  G02B17/023 ,  G03H1/0244 ,  G03H1/04 ,  G03H2001/0413 ,  G03H2001/0415 ,  G03H2001/0482 ,  G03H2001/0484 ,  G03H2001/0491 ,  G03H2222/33 ,  G03H2223/26 ,  G03H2240/24 ,  G03H2260/62 ,  G03H2270/13 ,  G03H2270/52

摘要： Disclosed is a method of producing a hologram through a two-beam laser interfering exposure process, which comprises emitting a coherent laser light with a pulse width (τ) ranging from greater than 900 femtoseconds to 100 picoseconds and a laser power of 10 μJ/pulse or more using a solid-state laser as a light source, dividing the pulses light from the laser into two beams, controlling the two beams temporally and spatially in such a manner that the two beam are converged on a surface of or inside a workpiece for recording a hologram while matching the respective converged spots of the two beams with one another temporally and spatially to create the interference therebetween so as to record a surface-relief hologram on the surface of the workpiece or an embedded hologram inside the workpiece in an irreversible manner. The present invention can solve a problem with a conventional process of recording a hologram in a non-photosensitive material in an irreversible manner using interfering femtosecond laser pulses, specifically, distortion in the waveforms of pulsed laser beams and resulting instability in recording of an embedded hologram due to a non-linear optical interaction between the femtosecond laser pulses and air/the material.

摘要翻译： 公开了一种通过双光束激光干涉曝光工艺制造全息图的方法，其包括发射脉冲宽度（τ）范围从大于900飞秒至100皮秒的相干激光，激光功率为10μJ/脉冲 或更多，使用固态激光器作为光源，将来自激光器的光脉冲分成两束光束，以这样的方式控制两个光束，使得两个光束会聚在工件的表面上或内部，以便 记录全息图，同时在时间上和空间上彼此相互匹配两个光束的各个会聚点，以在它们之间产生干涉，以便以不可逆的方式在工件表面或工件内的嵌入全息图中记录表面浮雕全息图 。 本发明可以解决使用干涉飞秒激光脉冲以不可逆方式记录全息图的常规方法的问题，特别是脉冲激光束的波形失真以及嵌入式全息图记录中的不稳定性 由于飞秒激光脉冲和空气/材料之间的非线性光学相互作用。

公开(公告)号：US20050158993A1

公开(公告)日：2005-07-21

申请号：US10505219

申请日：2003-02-19

申请人： Hideo Hosono ,  Masahiro Hirano ,  Hiromichi Ota ,  Masahiro Orita ,  Hidenori Hiramatsu ,  Kazushige Ueda

发明人： Hideo Hosono ,  Masahiro Hirano ,  Hiromichi Ota ,  Masahiro Orita ,  Hidenori Hiramatsu ,  Kazushige Ueda

IPC分类号： C30B29/22 ,  C09K11/00 ,  C09K11/08 ,  C09K11/84 ,  C09K11/88 ,  C30B23/02 ,  C30B33/00 ,  C30B33/02 ,  H01L21/205 ,  H01L21/363 ,  H01L21/365 ,  H01L29/24 ,  H01L33/26 ,  H01L21/44

CPC分类号： C30B33/00 ,  C30B1/02 ,  C30B23/02 ,  C30B29/22 ,  H01L21/0242 ,  H01L21/02439 ,  H01L21/02483 ,  H01L21/02485 ,  H01L21/02491 ,  H01L21/02565 ,  H01L21/02568 ,  H01L21/02631 ,  H01L29/24 ,  H01L33/26

摘要： Disclosed is a method of producing an LnCuOX single-crystal thin film (wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se and Te), which comprises the steps of growing a base thin film on a single-crystal substrate, depositing an amorphous or polycrystalline LnCuOX thin film on the base thin film to form a laminated film, and then annealing the laminated film at a high temperature of 500° C. or more. While a conventional LnCuOX film produced by growing an amorphous film through a sputtering process under appropriate conditions and then annealing the film at a high temperature was unexceptionally a polycrystalline substance incapable of achieving high emission efficiency and electron mobility required for a material of light-emitting devices or electronic devices, the method of the present invention can grow a thin film with excellent crystallinity suitable as a single crystal to an building black of light-emitting diodes, semiconductor Teasers, filed-effect transistors, or a hetero-bipolar transistors.

摘要翻译： 公开了一种LnCuOX单晶薄膜的制造方法（其中Ln为选自镧系元素和钇中的至少一种，X为选自S，Se和Te中的至少一种）， 其包括以下步骤：在单晶衬底上生长基底薄膜，在基底薄膜上沉积非晶或多晶LnCuOX薄膜以形成层压膜，然后在500℃的高温下对层压膜进行退火 。 或者更多。 虽然通过在适当条件下通过溅射工艺生长非晶膜然后在高温下退火膜而制备的常规LnCuOX膜通常是不能实现发光器件材料所需的高发光效率和电子迁移率的多晶物质 或电子器件，本发明的方法可以将适合作为单晶的优异结晶度的薄膜生长到发光二极管，半导体薄片，场效应晶体管或异质双极晶体管的建筑物黑色。

公开(公告)号：US20050061657A1

公开(公告)日：2005-03-24

申请号：US10498321

申请日：2002-12-11

申请人： Hideo Hosono ,  Katsuro Hayashi ,  Masahiro Hirano ,  Masayoshi Sadakata

发明人： Hideo Hosono ,  Katsuro Hayashi ,  Masahiro Hirano ,  Masayoshi Sadakata

IPC分类号： C01B13/02 ,  B01J19/08 ,  B01J19/12

CPC分类号： C01B13/02

摘要： The present invention provides a method for producing negatively charged oxygen atoms comprising: placing a negative electrode (3) on a surface of a member (2) made of calcium-aluminum composite oxide, proximately placing a positive electrode (10) on a side of the member opposite to the surface on which the negative electrode is placed, supplying oxygen to the negative electrode side, and applying voltage between the negative electrode and the positive electrode so as to extract negatively charged oxygen atoms (A) from the side where the positive electrode (10) is placed. The present invention also provides an apparatus for producing negatively charged oxygen atoms which is used for the above method.

摘要翻译： 本发明提供一种负电荷氧原子的制造方法，包括：将负极（3）放置在由钙 - 铝复合氧化物构成的部件（2）的表面上，将正极（10） 与负极放置的表面相对的构件，向负极侧供给氧，并且在负极和正极之间施加电压，以从阳极侧提取带负电荷的氧原子（A） 放置电极（10）。 本发明还提供了用于上述方法的用于产生带负电荷的氧原子的装置。

公开(公告)号：US20050039670A1

公开(公告)日：2005-02-24

申请号：US10494247

申请日：2002-10-31

申请人： Hideo Hosono ,  Hiromichi Ota ,  Masahiro Orita ,  Kazushige Ueda ,  Masahiro Hirano ,  Toshio Kamiya

发明人： Hideo Hosono ,  Hiromichi Ota ,  Masahiro Orita ,  Kazushige Ueda ,  Masahiro Hirano ,  Toshio Kamiya

IPC分类号： C30B23/02 ,  H01L21/336 ,  H01L29/45 ,  H01L29/49 ,  H01L29/786 ,  C30B1/00

CPC分类号： H01L29/7869 ,  C30B23/02 ,  C30B29/22 ,  C30B29/68 ,  H01L29/45 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78693

摘要： Disclosed is a natural-superlattice homologous single-crystal thin film, which comprises a complex oxide which is epitaxially grown on either one of a ZnO epitaxial thin film formed on a single-crystal substrate, the single-crystal substrate after disappearance of the ZnO epitaxial thin film and a ZnO single crystal. The complex oxide is expressed by the a formula: M1M2O3 (ZnO)m, wherein M1 is at least one selected from the group consisting of Ga, Fe, Sc, In, Lu, Yb, Tm, Er, Ho and Y, M2 is at least one selected from the group consisting of Mn, Fe, Ga, In and Al, and m is a natural number of 1 or more. A natural-superlattice homologous single-crystal thin film formed by depositing the complex oxide and subjecting the obtained layered film to a thermal anneal treatment can be used in optimal devices, electronic devices and X-ray optical devices.

摘要翻译： 公开了一种天然超晶格同源单晶薄膜，其包括外延生长在单晶衬底上形成的ZnO外延薄膜中的任何一种上的复合氧化物，ZnO外延消失后的单晶衬底 薄膜和ZnO单晶。 复合氧化物用下式表示：M 1 M 2 O 3（ZnO）m，其中M 1是选自Ga，Fe，Sc，In，Lu，Yb中的至少一种 ，Tm，Er，Ho和Y，M 2为选自Mn，Fe，Ga，In和Al中的至少一种，m为1以上的自然数。 通过沉积复合氧化物并使得到的层状膜进行热退火处理而形成的天然超晶格同晶单晶薄膜可以用于最佳器件，电子器件和X射线光学器件中。

公开(公告)号：US10032931B2

公开(公告)日：2018-07-24

申请号：US13243244

申请日：2011-09-23

申请人： Hideo Hosono ,  Masahiro Hirano ,  Hiromichi Ota ,  Toshio Kamiya ,  Kenji Nomura

发明人： Hideo Hosono ,  Masahiro Hirano ,  Hiromichi Ota ,  Toshio Kamiya ,  Kenji Nomura

IPC分类号： H01L29/26 ,  H01L29/786 ,  C23C14/00 ,  C23C14/08 ,  C23C14/28 ,  C23C14/34 ,  H01L21/02 ,  H01L27/12

摘要： A switching element of LCDs or organic EL displays which uses a thin film transistor device, includes: a drain electrode, a source electrode, a channel layer contacting the drain electrode and the source electrode, wherein the channel layer comprises indium-gallium-zinc oxide having a transparent, amorphous state of a composition equivalent to InGaO3(ZnO)m (wherein m is a natural number less than 6) in a crystallized state, and the channel layer has a semi-insulating property represented by an electron mobility of more than 1 cm2/(V·sec) and an electron carrier concentration is less than 1018/cm3, a gate electrode, and a gate insulating film positioned between the gate electrode and the channel layer.

公开(公告)号：US08742393B2

公开(公告)日：2014-06-03

申请号：US13415039

申请日：2012-03-08

申请人： Tomofumi Susaki ,  Hideo Hosono

发明人： Tomofumi Susaki ,  Hideo Hosono

IPC分类号： H01L29/06

CPC分类号： H01J1/312 ,  B82Y10/00

摘要： The SrTiO3 buffer layer is formed by lamination of the Sr2+O2− layer and the Ti4+O24− layer. The surface of the buffer layer is terminated with the Ti4+O24− layer. On the buffer layer, a LaAlO3 thin film layer is formed. The thin film layer includes a La3+O2− layer and an Al3+O24− layer alternately laminated in order on the SrTiO3 buffer layer.

摘要翻译： SrTiO3缓冲层是通过层压Sr2 + O2-层和Ti4 + O24-层而形成的。 缓冲层的表面用Ti4 + O24层终止。 在缓冲层上形成LaAlO 3薄膜层。 薄膜层包括在SrTiO 3缓冲层上依次交替层叠的La3 + O2层和Al3 + O24层。

公开(公告)号：US20130183224A1

公开(公告)日：2013-07-18

申请号：US13824227

申请日：2011-12-06

申请人： Hideo Hosono ,  Michikazu Hara ,  Masaaki Kitano ,  Sung Wng Kim ,  Satoru Matsuishi ,  Yoshitake Toda ,  Toshiharu Yokoyama ,  Fumitaka Hayashi

发明人： Hideo Hosono ,  Michikazu Hara ,  Masaaki Kitano ,  Sung Wng Kim ,  Satoru Matsuishi ,  Yoshitake Toda ,  Toshiharu Yokoyama ,  Fumitaka Hayashi

IPC分类号： C01C1/04

CPC分类号： C01C1/0411 ,  B01J21/04 ,  B01J23/462 ,  B01J23/745 ,  B01J23/75 ,  B01J35/002 ,  B01J35/0033 ,  B01J35/1009 ,  B01J37/0201 ,  B01J37/086 ,  B01J37/16 ,  B01J37/18 ,  Y02P20/52

摘要： The present invention provides a catalyst substance that is stable and performs well in the synthesis of ammonia, one of the most important chemical substances for fertilizer ingredients and the like. The catalyst substance exhibits catalytic activity under mild synthesis conditions not requiring high pressure, and is also advantageous from a resource perspective. Further provided is a method for producing the same. This catalyst comprises a supported metal catalyst that is supported on a mayenite type compound including conduction electrons of 1015 cm−3 or more and serving as a support for the ammonia synthesis catalyst. The mayenite type compound used as the support may take any form, including that of powder, a porous material, a sintered body, a thin-film, or a single crystal. Use of this catalyst makes it possible to increase the electron donating ability toward a transition metal.

摘要翻译： 本发明提供一种氨合成稳定性良好的催化剂物质，其为化肥成分等最重要的化学物质之一。 催化剂物质在不需要高压的温和合成条件下表现出催化活性，并且从资源角度来看也是有利的。 进一步提供其制造方法。 该催化剂包含负载在包含1015cm-3以上的导电电子的钙铝石型化合物作为氨合成催化剂的载体的载体金属催化剂。 用作载体的钙铝石型化合物可以是任何形式，包括粉末，多孔材料，烧结体，薄膜或单晶。 使用该催化剂使得可以增加向过渡金属的给电能力。

公开(公告)号：US08084743B2

公开(公告)日：2011-12-27

申请号：US12164917

申请日：2008-06-30

申请人： Keishi Saito ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

发明人： Keishi Saito ,  Hideo Hosono ,  Toshio Kamiya ,  Kenji Nomura

IPC分类号： G01T1/24

CPC分类号： H01L31/032 ,  H01L27/14601 ,  H01L27/14632 ,  H01L27/14658 ,  H01L29/7869 ,  H01L31/02322 ,  H01L31/085 ,  H01L31/09 ,  H01L31/118

摘要： A sensor for detecting a received electromagnetic wave comprising a first electrode, a second electrode and an amorphous oxide layer interposed between the first electrode and the second electrode.

摘要翻译： 一种用于检测接收的电磁波的传感器，包括插在第一电极和第二电极之间的第一电极，第二电极和无定形氧化物层。

公开(公告)号：US20110045985A1

公开(公告)日：2011-02-24

申请号：US12934931

申请日：2009-02-20

申请人： Hideo Hosono ,  Hiroshi Yanagi ,  Toshio Kamiya ,  Satoru Matsuishi ,  Sungwng Kim ,  Seok Gyu Yoon ,  Hidenori Hiramatsu ,  Masahiro Hirano ,  Yoichi Kamihara ,  Takatoshi Nomura

发明人： Hideo Hosono ,  Hiroshi Yanagi ,  Toshio Kamiya ,  Satoru Matsuishi ,  Sungwng Kim ,  Seok Gyu Yoon ,  Hidenori Hiramatsu ,  Masahiro Hirano ,  Yoichi Kamihara ,  Takatoshi Nomura

IPC分类号： C22C30/00 ,  H01L39/00 ,  H01L39/24 ,  C22C30/02

CPC分类号： C01G55/002 ,  C01B25/088 ,  C01G49/009 ,  C01G53/006 ,  C01P2002/22 ,  C01P2002/34 ,  C01P2002/52 ,  C01P2002/72 ,  C01P2002/77 ,  C01P2006/40 ,  C01P2006/42 ,  H01L39/125

摘要： A superconductor which comprises a new compound composition substituting for perovskite copper oxides. The superconductor is characterized by comprising a compound which is represented by the chemical formula A(TM)2Pn2 [wherein A is at least one member selected from the elements in Group 1, the elements in Group 2, or the elements in Group 3 (Sc, Y, and the rare-earth metal elements); TM is at least one member selected from the transition metal elements Fe, Ru, Os, Ni, Pd, or Pt; and Pn is at least one member selected from the elements in Group 15 (pnicogen elements)] and which has an infinite-layer crystal structure comprising (TM)Pn layers alternating with metal layers of the element (A).

摘要翻译： 一种超导体，其包含取代钙钛矿铜氧化物的新化合物组合物。 超导体的特征在于包含由化学式A（TM）2Pn2表示的化合物[其中A是选自组1中的元素，组2中的元素或组3中的元素（Sc ，Y和稀土金属元素）; TM是选自过渡金属元素Fe，Ru，Os，Ni，Pd或Pt中的至少一种; 并且Pn是选自第15族元素（pnicogen元素）中的至少一种元素]，并且其具有包含与元素（A）的金属层交替的（TM）Pn层的无限层晶体结构。