公开(公告)号：US20080003784A1

公开(公告)日：2008-01-03

申请号：US11427272

申请日：2006-06-28

Applicant: Shaoher X. Pan

Inventor： Shaoher X. Pan

IPC: H01L21/20

CPC classification number: B81C1/00246 ,  B81B2201/047 ,  B81C2201/0176 ,  B81C2203/0721 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262

Abstract: A method of fabricating a micro structure includes depositing amorphous silicon over a substrate having an electric circuit at a temperature below 550° C. to form a first structure portion, wherein at least part of the first structure portion is configured to receive an electrical signal from the electric circuit.

Abstract translation: 制造微结构的方法包括在低于550℃的温度下在具有电路的衬底上沉积非晶硅，以形成第一结构部分，其中第一结构部分的至少一部分被配置为从 电路。

公开(公告)号：US07256467B2

公开(公告)日：2007-08-14

申请号：US10453933

申请日：2003-06-04

Applicant: Jason S. Reid ,  Nungavram S. Viswanathan

Inventor： Jason S. Reid ,  Nungavram S. Viswanathan

IPC: H01L21/00 ,  H01L29/82

CPC classification number: C09D4/00 ,  B81B3/0005 ,  B81C1/0096 ,  B81C2201/0176 ,  B81C2201/112 ,  B82Y30/00 ,  C08G77/00 ,  C08G77/04 ,  C08G77/24

Abstract: A micro-electromechanical device is formed on a substrate. The device has sliding, abrading or impacting surfaces. At least one of these surfaces is covered with an anti-stiction material. The anti-stiction material is provided from a slicon compound precursor (e.g. silane, silanol) or multiple silicon compound precursors. Preferably the precursor(s) is fluorinated—more preferably perfluorinated, and is deposited with a solvent as a low molecular weight oligomer or in monomeric form. Examples include silanes (fluorinated or not) with aromatic or polycyclic ring sturctures, and/or silanes (fluorinated or not) having alkenyl, alkynyl, epoxy or acrylate groups. Mixtures either or both of these groups with alkyl chain silanes (preferably fluorinated) are also contemplated.

Abstract translation: 在基板上形成微机电装置。 该装置具有滑动，研磨或冲击表面。 这些表面中的至少一个被抗静电材料覆盖。 抗粘性材料由Slico化合物前体（例如硅烷，硅烷醇）或多种硅化合物前体提供。 优选地，前体被氟化 - 更优选全氟化，并且以溶剂作为低分子量低聚物或以单体形式沉积。 实例包括具有芳族或多环结构的硅烷（氟化或非氟化），和/或具有烯基，炔基，环氧基或丙烯酸酯基团的硅烷（氟化或非氟化）。 这些基团中的一个或两个与烷基链硅烷（优选氟化）混合也是可以预料的。

公开(公告)号：US20060108652A1

公开(公告)日：2006-05-25

申请号：US11323920

申请日：2005-12-30

Applicant: Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

Inventor： Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

IPC: H01L29/82 ,  H01L29/84

CPC classification number: B81C1/00261 ,  B81B2207/015 ,  B81C1/00333 ,  B81C2201/0176 ,  B81C2203/0136 ,  H01L2924/0002 ,  H01L2924/00

Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.

Abstract translation: 这里描述和说明了许多发明。 在一个方面，本发明涉及MEMS器件，以及制造或制造MEMS器件的技术，其具有在最终封装之前封装在腔室中的机械结构。 当沉积时，封装机械结构的材料包括以下属性中的一个或多个：低拉伸应力，良好的阶梯覆盖，在经受后续加工时保持其完整性，不会显着和/或不利地影响 室中的机械结构（如果在沉积期间涂覆材料）和/或促进与高性能集成电路的集成。 在一个实施例中，封装机械结构的材料是例如硅（多晶，无定形或多孔，无论掺杂或未掺杂），碳化硅，硅 - 锗，锗或砷化镓。

公开(公告)号：US20040245586A1

公开(公告)日：2004-12-09

申请号：US10455555

申请日：2003-06-04

Inventor： Aaron Partridge ,  Markus Lutz ,  Silvia Kronmueller

IPC: H01L021/00 ,  H01L027/14 ,  H01L029/82 ,  H01L021/44

CPC classification number: B81C1/00301 ,  B81B2207/015 ,  B81B2207/095 ,  B81C2201/0176 ,  B81C2203/0136

Abstract: There are many inventions described and illustrated herein. In one aspect, the present invention is directed to a MEMS device, and technique of fabricating or manufacturing a MEMS device, having mechanical structures encapsulated in a chamber prior to final packaging and a contact area disposed at least partially outside the chamber. The contact area is electrically isolated from nearby electrically conducting regions by way of dielectric isolation trench that is disposed around the contact area. The material that encapsulates the mechanical structures, when deposited, includes one or more of the following attributes: low tensile stress, good step coverage, maintains its integrity when subjected to subsequent processing, does not significantly and/or adversely impact the performance characteristics of the mechanical structures in the chamber (if coated with the material during deposition), and/or facilitates integration with high-performance integrated circuits. In one embodiment, the material that encapsulates the mechanical structures is, for example, silicon (polycrystalline, amorphous or porous, whether doped or undoped), silicon carbide, silicon-germanium, germanium, or gallium-arsenide.

Abstract translation: 这里描述和说明了许多发明。 一方面，本发明涉及MEMS器件，以及制造或制造MEMS器件的技术，其具有在最终封装之前封装在腔室中的机械结构以及至少部分地设置在腔室外部的接触区域。 接触区域通过设置在接触区域周围的绝缘隔离沟槽与附近的导电区域电隔离。 当沉积时，封装机械结构的材料包括以下属性中的一个或多个：低拉伸应力，良好的阶梯覆盖，在经受后续加工时保持其完整性，不会显着和/或不利地影响 室中的机械结构（如果在沉积期间涂覆材料）和/或促进与高性能集成电路的集成。 在一个实施例中，封装机械结构的材料是例如硅（多晶，无定形或多孔，无论掺杂或未掺杂），碳化硅，硅 - 锗，锗或砷化镓。

公开(公告)号：US20040037956A1

公开(公告)日：2004-02-26

申请号：US10225846

申请日：2002-08-22

Applicant: Eastman Kodak Company

Inventor： Zhihao Yang

IPC: C23C016/00

CPC classification number: B81C1/0096 ,  B05D1/60 ,  B81B3/0005 ,  B81C2201/0176 ,  B81C2201/112 ,  B82Y30/00 ,  C09D4/00 ,  C08G77/24 ,  C08G77/04

Abstract: A method for coating a micro-electromechanical systems device with a silane coupling agent by a) mixing the silane coupling agent with a low volatile matrix material in a coating source material container; b) placing the micro-electromechanical systems device in a vacuum deposition chamber which in connection with the coating source material container; c) pumping the vacuum deposition chamber to a predetermined pressure; and maintaining the pressure of the vacuum deposition chamber for a period of time in order to chemically vapor deposit the silane coupling agent on the surface of the micro-electromechanical systems device

Abstract translation: 一种通过以下步骤涂覆具有硅烷偶联剂的微机电系统装置的方法：a）将硅烷偶联剂与低挥发性基质材料混合在涂料源材料容器中; b）将微机电系统装置放置在与涂料源材料容器相连的真空沉积室中; c）将真空沉积室泵送至预定压力; 并且将真空沉积室的压力维持一段时间，以便在微机电系统装置的表面上化学气相沉积硅烷偶联剂

公开(公告)号：US20040033639A1

公开(公告)日：2004-02-19

申请号：US10435757

申请日：2003-05-09

Applicant: APPLIED MATERIALS, INC.

Inventor： Jeffrey D. Chinn ,  Rolf A. Guenther ,  Michael B. Rattner ,  James A. Cooper ,  Toi Yue Becky Leung ,  Claes H. Bjorkman

IPC: H01L021/00

CPC classification number: B81C1/0096 ,  B81B3/0005 ,  B81C2201/0176 ,  B81C2201/112 ,  B82Y30/00

Abstract: Disclosed herein is a method of improving the adhesion of a hydrophobic self-assembled monolayer (SAM) coating to a surface of a MEMS structure, for the purpose of preventing stiction. The method comprises treating surfaces of the MEMS structure with a plasma generated from a source gas comprising oxygen and, optionally, hydrogen. The treatment oxidizes the surfaces, which are then reacted with hydrogen to form bonded OH groups on the surfaces. The hydrogen source may be present as part of the plasma source gas, so that the bonded OH groups are created during treatment of the surfaces with the plasma. Also disclosed herein is an integrated method for release and passivation of MEMS structures which may be adjusted to be carried out in a either a single chamber processing system or a multi-chamber processing system.

Abstract translation: 本文公开了一种改进疏水性自组装单层（SAM）涂层到MEMS结构表面的粘附性的方法，以防止粘结。 该方法包括用包含氧气和任选的氢气的源气体产生的等离子体处理MEMS结构的表面。 处理氧化表面，然后与氢气反应以在表面上形成键合的OH基团。 氢源可以作为等离子体源气体的一部分存在，使得在用等离子体处理表面期间产生结合的OH基团。 本文还公开了一种用于MEMS结构的释放和钝化的集成方法，其可以被调整为在单室处理系统或多室处理系统中进行。

公开(公告)号：US20030211650A1

公开(公告)日：2003-11-13

申请号：US10457500

申请日：2003-06-09

Applicant: Analog Devices, Inc.

Inventor： John R. Martin

IPC: H01L021/00

CPC classification number: H01L21/3122 ,  B81B3/0005 ,  B81C1/0096 ,  B81C2201/0176 ,  B81C2201/112 ,  H01L21/02126 ,  H01L21/02216 ,  H01L21/02263 ,  H01L24/05 ,  H01L24/45 ,  H01L2224/05624 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48624 ,  H01L2224/73265 ,  H01L2924/01079 ,  H01L2924/10253 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/16152 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2924/00014

Abstract: This invention discloses a process for forming durable anti-stiction surfaces on micromachined structures while they are still in wafer form (i.e., before they are separated into discrete devices for assembly into packages). This process involves the vapor deposition of a material to create a low stiction surface. It also discloses chemicals which are effective in imparting an anti-stiction property to the chip. These include polyphenylsiloxanes, silanol terminated phenylsiloxanes and similar materials.

Abstract translation: 本发明公开了一种在微加工结构上形成持久的抗静电表面的方法，同时它们仍然是晶片形式（即，在它们被分离成用于组装成包装的分立装置之前）。 该方法涉及材料的气相沉积以产生低粘度表面。 它还公开了有效赋予芯片抗静电性能的化学品。 这些包括聚苯基硅氧烷，硅烷醇封端的苯基硅氧烷和类似的材料。

公开(公告)号：US20030166342A1

公开(公告)日：2003-09-04

申请号：US10300970

申请日：2002-11-20

Applicant: APPLIED MATERIALS, INC.

Inventor： Jeffrey D. Chinn ,  Rolf A. Guenther ,  Michael B. Rattner ,  James A. Cooper ,  Toi Yue Becky Leung

IPC: H01L021/461 ,  H01L021/31 ,  H01L021/302 ,  H01L021/469

CPC classification number: B81C1/0096 ,  B81B3/0005 ,  B81C2201/0176 ,  B81C2201/112 ,  B82Y30/00

Abstract: Disclosed herein is a method of improving the adhesion of a hydrophobic self-assembled monolayer (SAM) coating to a surface of a MEMS structure, for the purpose of preventing stiction. The method comprises pretreating surfaces of the MEMS structure with a plasma generated from a source gas comprising oxygen and, optionally, hydrogen. The treatment oxidizes the surfaces, which are then reacted with hydrogen to form bonded OH groups on the surfaces. The hydrogen source may be present as part of the plasma source gas, so that the bonded OH groups are created during treatment of the surfaces with the plasma. Also disclosed herein is an integrated method for release and passivation of MEMS structures.

Abstract translation: 本文公开了一种改进疏水性自组装单层（SAM）涂层到MEMS结构表面的粘附性的方法，以防止粘结。 该方法包括用包含氧气和任选的氢气的源气体产生的等离子体来预处理MEMS结构的表面。 处理氧化表面，然后与氢气反应以在表面上形成键合的OH基团。 氢源可以作为等离子体源气体的一部分存在，使得在用等离子体处理表面期间产生结合的OH基团。 本文还公开了一种用于MEMS结构的释放和钝化的集成方法。

公开(公告)号：US20020164879A1

公开(公告)日：2002-11-07

申请号：US09850923

申请日：2001-05-07

Applicant: Applied Materials, Inc.

Inventor： Toi Yue Becky Leung ,  Jeffrey D. Chinn

IPC: H01L021/302 ,  H01L021/461 ,  H01L021/31 ,  H01L021/469

CPC classification number: B81C1/0096 ,  B81B3/0005 ,  B81C2201/0176 ,  B81C2201/112 ,  B82Y30/00

Abstract: The invention includes methods of forming microstructure devices. In an exemplary method, a substrate is provided which includes a first material and a second material. At least one of the first and second materials is exposed to vapor-phase alkylsilane-containing molecules to form a coating over the at least one of the first and second materials.

Abstract translation: 本发明包括形成微结构器件的方法。 在示例性方法中，提供了包括第一材料和第二材料的基底。 将第一和第二材料中的至少一种暴露于含气相烷基硅烷的分子，以在第一和第二材料中的至少一种材料上形成涂层。

公开(公告)号：US06290859B1

公开(公告)日：2001-09-18

申请号：US09439103

申请日：1999-11-12

Applicant: James G. Fleming ,  Seethambal S. Mani ,  Jeffry J. Sniegowski ,  Robert S. Blewer

Inventor： James G. Fleming ,  Seethambal S. Mani ,  Jeffry J. Sniegowski ,  Robert S. Blewer

IPC: H01L2100

CPC classification number: B81C1/0096 ,  B81B3/0005 ,  B81B2201/035 ,  B81C1/00674 ,  B81C2201/0176 ,  B81C2201/112 ,  H01H2001/0057

Abstract: A process is disclosed whereby a 5-50-nanometer-thick conformal tungsten coating can be formed over exposed semiconductor surfaces (e.g. silicon, germanium or silicon carbide) within a microelectromechanical (MEM) device for improved wear resistance and reliability. The tungsten coating is formed after cleaning the semiconductor surfaces to remove any organic material and oxide film from the surface. A final in situ cleaning step is performed by heating a substrate containing the MEM device to a temperature in the range of 200-600 ° C. in the presence of gaseous nitrogen trifluoride (NF3). The tungsten coating can then be formed by a chemical reaction between the semiconductor surfaces and tungsten hexafluoride (WF6) at an elevated temperature, preferably about 450° C. The tungsten deposition process is self-limiting and covers all exposed semiconductor surfaces including surfaces in close contact. The present invention can be applied to many different types of MEM devices including microrelays, micromirrors and microengines. Additionally, the tungsten wear-resistant coating of the present invention can be used to enhance the hardness, wear resistance, electrical conductivity, optical reflectivity and chemical inertness of one or more semiconductor surfaces within a MEM device.

Abstract translation: 公开了一种方法，其中可以在微机电（MEM）装置内的暴露的半导体表面（例如硅，锗或碳化硅）上形成5-50纳米厚的共形钨涂层，以改善耐磨性和可靠性。 在清洁半导体表面之后形成钨涂层，以从表面除去任何有机材料和氧化物膜。 通过在含有气态三氟化氮（NF 3）的存在下，将含有MEM装置的基板加热至200-600℃的温度，进行最终的原位清洗步骤。 钨涂层然后可以通过半导体表面和六氟化钨（WF6）之间的化学反应在升高的温度，优选约450℃下形成。钨沉积工艺是自限制的，并且覆盖所有暴露的半导体表面，包括紧密的表面 联系。 本发明可以应用于许多不同类型的MEM装置，包括微型雷达，微镜和微型引擎。 此外，本发明的钨耐磨涂层可用于提高MEM装置内的一个或多个半导体表面的硬度，耐磨性，导电性，光反射率和化学惰性。