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    Sputtering device and sputtering method
    72.
    发明授权
    Sputtering device and sputtering method 有权
    溅射装置和溅射法

    公开(公告)号：US08968538B2

    公开(公告)日：2015-03-03

    申请号：US13121338

    申请日：2009-09-29

    Applicant: Toru Kitada ,  Naoki Watanabe ,  Motonobu Nagai ,  Masahiro Suenaga ,  Takeo Konno

    Inventor： Toru Kitada ,  Naoki Watanabe ,  Motonobu Nagai ,  Masahiro Suenaga ,  Takeo Konno

    IPC: C23C14/00 ,  C25B9/00 ,  C25B11/00 ,  C25B13/00 ,  C23C14/54 ,  C23C14/34 ,  H01J37/32 ,  H01J37/34 ,  H01F41/18

    CPC classification number: C23C14/542 ,  C23C14/3464 ,  H01F41/18 ,  H01J37/3266 ,  H01J37/32733 ,  H01J37/3405 ,  H01J37/3408 ,  H01J37/3414

    Abstract: A magnetic film having excellent uniformity in in-plane distribution of film thickness or sheet resistance is formed when the film is formed by forming a magnetic field on a processing surface of a substrate (21) and performing oblique incidence sputtering by using high discharge power.A sputtering apparatus (1) is provided with a substrate holder (22) for holding rotatably the substrate (21) in the surface direction of the processing surface of the substrate; a substrate magnetic field forming device (30) which is disposed to surround the substrate (21) and forms a magnetic field on the processing surface of the substrate (21); cathodes (41) which are arranged diagonally above the substrate (21) and are supplied with electric discharge power; a position detecting device (23) for detecting a rotation position of the substrate (21); and a control device (50) which adjusts the rotation speed of the substrate (21) in accordance with the rotation position detected by the position detecting device (23).

    Abstract translation: 当通过在基板（21）的处理表面上形成磁场并且通过使用高放电电力进行倾斜入射溅射形成膜时，形成膜厚度或薄层电阻的面内分布均匀性优异的磁性膜。 溅射装置（1）设置有用于在基板的处理表面的表面方向上可旋转地保持基板（21）的基板保持器（22） 衬底磁场形成装置（30），被设置为围绕所述衬底（21）并在所述衬底（21）的所述处理表面上形成磁场; 在基板（21）上方对角配置并供给放电电力的阴极（41） 位置检测装置，用于检测所述基板的旋转位置; 以及根据由位置检测装置（23）检测到的旋转位置来调整基板（21）的转速的控制装置（50）。

    SPUTTERING TARGET AND MANUFACTURING METHOD THEREFOR
    73.
    发明申请
    SPUTTERING TARGET AND MANUFACTURING METHOD THEREFOR 有权
    溅射目标及其制造方法

    公开(公告)号：US20140318953A1

    公开(公告)日：2014-10-30

    申请号：US14348174

    申请日：2012-09-12

    Applicant: Kenichi Nagata ,  Tomio Otsuki ,  Takeo Okabe ,  Nobuhito Makino ,  Atsushi Fukushima

    Inventor： Kenichi Nagata ,  Tomio Otsuki ,  Takeo Okabe ,  Nobuhito Makino ,  Atsushi Fukushima

    IPC: H01J37/34 ,  B21D53/00

    CPC classification number: H01J37/3435 ,  B21D53/00 ,  C22C9/05 ,  C23C14/3407 ,  C23C14/3414 ,  H01J37/3414 ,  H01J37/3426

    Abstract: A backing plate integrated sputtering target includes a flange part having a Vicker's hardness (Hv) of 90 or more and a 0.2% yield stress of 6.98×107 N/m2 or more. Enhancing the mechanical strength of only the flange part of the target inhibits the target from being deformed during sputtering, and further, does not vary the original sputtering characteristics. Consequently, the target can form a thin film having excellent uniformity. This can improve the yield and the reliability of semiconductor products, which have been progressing in miniaturization and integration.

    Abstract translation: 背板集成溅射靶包括具有维氏硬度（Hv）为90以上且0.2％屈服应力为6.98×10 7 N / m 2以上的凸缘部。 仅提高目标的凸缘部分的机械强度可以抑制靶在溅射过程中变形，而且不改变原始溅射特性。 因此，靶可以形成均匀性优异的薄膜。 这可以提高半导体产品的产量和可靠性，这在小型化和集成化方面一直在进步。

    Film Deposition Apparatus with Low Plasma Damage and Low Processing Temperature
    74.
    发明申请
    Film Deposition Apparatus with Low Plasma Damage and Low Processing Temperature 审中-公开
    具有低等离子体损伤和低加工温度的膜沉积装置

    公开(公告)号：US20140251799A1

    公开(公告)日：2014-09-11

    申请号：US14188689

    申请日：2014-02-25

    Applicant: Areesys Technologies, Inc.

    Inventor： Kai-An Wang ,  Craig W. Marion ,  Efrain A. Velazquez ,  Michael Z. Wong ,  Albert Ting ,  Jingru Sun

    IPC: H01J37/32

    CPC classification number: C23C14/35 ,  H01J37/3408 ,  H01J37/3414 ,  H01J37/3417 ,  H01J37/3435 ,  H01J37/345

    Abstract: A deposition system includes a magnetron sputter deposition source that includes a backing frame that includes a window and a closed loop around the window. The backing frame includes inside surfaces towards the window, one or more sputtering targets mounted on inside surfaces of the backing frame, and one or more magnets mounted on outside surfaces of the backing frame. The one or more sputtering targets include sputtering surfaces that define internal walls of the window. The one or more magnets can produce a magnetic field near the one or more sputtering surfaces. A substrate includes a deposition surface oriented towards the window in the backing frame. The deposition surface receives sputtering material(s) from the one or more sputtering targets.

    Abstract translation: 沉积系统包括磁控溅射沉积源，其包括包括窗口和围绕窗口的闭环的背衬框架。 背衬框架包括朝向窗口的内表面，安装在背衬框架的内表面上的一个或多个溅射靶，以及安装在背衬框架的外表面上的一个或多个磁体。 一个或多个溅射靶包括限定窗的内壁的溅射表面。 一个或多个磁体可以在一个或多个溅射表面附近产生磁场。 衬底包括朝向背衬框架中的窗口定向的沉积表面。 沉积表面接收来自一个或多个溅射靶的溅射材料。

    DEVICE AND METHOD FOR ION BEAM SPUTTERING
    76.
    发明申请
    DEVICE AND METHOD FOR ION BEAM SPUTTERING 审中-公开
    离子束溅射的装置和方法

    公开(公告)号：US20140090973A1

    公开(公告)日：2014-04-03

    申请号：US13984234

    申请日：2012-02-06

    Applicant: Pascal Sortais ,  Thierry Lamy

    Inventor： Pascal Sortais ,  Thierry Lamy

    IPC: C23C14/34

    CPC classification number: C23C14/3442 ,  C23C14/3464 ,  C23C14/46 ,  H01J37/3414 ,  H01J37/3417 ,  H01J37/3429

    Abstract: The invention relates to a device for depositing a selected material on a substrate by means of ion beam sputtering, which include a plurality of targets of a selected material, each of which is bombarded by an ion beam, the lateral dimensions of each of the ion beams being less than one tenth of the lateral dimensions of the substrate.

    Abstract translation: 本发明涉及一种用于通过离子束溅射在衬底上沉积所选择的材料的装置，其包括选定材料的多个靶，每个靶由离子束轰击，每个离子的横向尺寸 光束小于衬底的横向尺寸的十分之一。

    Three Dimensional Metal Deposition Technique
    77.
    发明申请
    Three Dimensional Metal Deposition Technique 有权
    三维金属沉积技术

    公开(公告)号：US20140027274A1

    公开(公告)日：2014-01-30

    申请号：US13560664

    申请日：2012-07-27

    Applicant: Ludovic Godet ,  Adjin Sarajlic

    Inventor： Ludovic Godet ,  Adjin Sarajlic

    IPC: C23C14/34

    CPC classification number: H01J37/32422 ,  C23C14/046 ,  C23C14/3407 ,  C23C14/345 ,  H01J37/32357 ,  H01J37/32403 ,  H01J37/32623 ,  H01J37/32633 ,  H01J37/32642 ,  H01J37/3414 ,  H01J37/3417 ,  H01J37/3467 ,  H01J2237/08 ,  H01J2237/31701

    Abstract: A plasma processing apparatus is disclosed. The plasma processing apparatus includes a source configured to generate a plasma in a process chamber having a plasma sheath adjacent to the front surface of a workpiece, and a plasma sheath modifier. The plasma sheath modifier controls a shape of a boundary between the plasma and the plasma sheath so a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the workpiece facing the plasma. A metal target is affixed to the back surface of the plasma sheath modifier so as to be electrically insulated from the plasma sheath modifier and is electrically biased such that ions exiting the plasma and passing through an aperture in the plasma sheath modifier are attracted toward the metal target. These ions cause sputtering of the metal target, allowing three dimensional metal deposition of the workpiece.

    Abstract translation: 公开了一种等离子体处理装置。 等离子体处理装置包括被配置为在具有与工件的前表面相邻的等离子体鞘的处理室中产生等离子体的源和等离子体护套改性剂。 等离子体护套修改器控制等离子体和等离子体护套之间的边界的形状，使得边界形状的一部分不平行于由面向等离子体的工件的前表面限定的平面。 将金属靶固定到等离子体护套改性剂的背面，以便与等离子体护套改性剂电绝缘，并被电偏置，使得离开等离子体并通过等离子体护套改性剂中的孔的离子被吸引到金属 目标。 这些离子引起金属靶溅射，允许工件的三维金属沉积。

    VAPOUR DEPOSITION
    79.
    发明申请
    VAPOUR DEPOSITION 有权
    蒸气沉积

    公开(公告)号：US20130277204A1

    公开(公告)日：2013-10-24

    申请号：US13885593

    申请日：2011-11-21

    Applicant: Ricardo Mikalo ,  Jens Dienelt

    Inventor： Ricardo Mikalo ,  Jens Dienelt

    IPC: C23C14/34

    CPC classification number: C23C14/34 ,  C23C14/3407 ,  H01J37/3414 ,  H01J37/3417 ,  H01J37/3426

    Abstract: A method, comprising: generating a vapour of a material from a source of said material comprising a plurality of separate solid pieces of said material supported on a surface of a base in a configuration in which said plurality of solid pieces of said target material are arranged at two or more levels to cover the whole of said surface of said base whilst providing a gap between adjacent pieces at the same level; and depositing said material from said vapour onto a substrate.

    Abstract translation: 一种方法，包括：从所述材料的源产生材料的蒸气，所述材料的蒸气包括多个分离的所述材料的固体块，所述多个独立的固体块支撑在基体的表面上，所述构型中所述多个所述目标材料的固体块被布置 在两个或更多个水平上以覆盖所述基座的整个所述表面，同时在相同水平面处的相邻块之间提供间隙; 以及将所述材料从所述蒸气沉积到基底上。

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