Abstract:
A system and method is disclosed for reducing processing errors during the fabrication of integrated circuit wafers. A 2D dot matrix wafer scribe that contains coded information is placed on a wafer. The coded information contains wafer information such as the wafer lot number. The wafer is then placed in an ion implantation system. A camera in the ion implantation system is then used to photograph the dot matrix wafer scribe on the wafer. The information about the wafer is then decoded from the photograph of the dot matrix wafer scribe. A station controller that operates the ion implantation system then uses the information from the dot matrix wafer scribe to determine whether the wafer is suitable for ion implantation. The wafer is implanted only when the information from the dot matrix wafer scribe matches information about the wafer that has been previously stored in the station controller.
Abstract:
Laser-assisted apparatus and methods for performing nanoscale material processing, including nanodeposition of materials, can be controlled very precisely to yield both simple and complex structures with sizes less than 100 nm. Optical or thermal energy in the near field of a photon (laser) pulse is used to fabricate submicron and nanometer structures on a substrate. A wide variety of laser material processing techniques can be adapted for use including, subtractive (e.g., ablation, machining or chemical etching), additive (e.g., chemical vapor deposition, selective self-assembly), and modification (e.g., phase transformation, doping) processes. Additionally, the apparatus can be integrated into imaging instruments, such as SEM and TEM, to allow for real-time imaging of the material processing.
Abstract:
In a pattern-lock system of particle-beam apparatus wherein the imaging of the pattern is done by means of at least two consecutive projector stages of the projecting system, reference marks are imaged upon registering means to determine the position of the particle-beam, at the location of an intermediary image of the reference marks produced by a non-final projector stage, with the registering means being positioned at locations of nominal positions of an intermediary imaging plane. Furthermore, to produce a scanning movement over the registering means the reference beamlets are shifted laterally by means of deflector means provided in the pattern defining means in dependence of a time-dependent electric voltage.
Abstract:
The present invention includes a method to print patterns with improved edge acuity. The method for printing fine patterns comprises the actions of: providing an SLM and providing a pixel layout pattern with different categories of modulating elements, the categories differing in the phase of the complex amplitude.
Abstract:
The apparatus for working and observing samples comprises a sample plate on which a sample is to be placed; a first ion beam lens barrel capable of irradiating a first ion beam over a whole predetermined irradiation range at one time; a mask that can be arranged between the sample plate and the first ion beam lens barrel, and shields part of the first ion beam; mask-moving means capable of moving the mask; a charged particle beam lens barrel capable of scanning a focused beam of charged particles in the range irradiated with the first ion beam; and detection means capable of detecting a secondarily generated substance.
Abstract:
A writing apparatus includes a writing unit configured to write a first pattern onto a first mask substrate and a second pattern being complementary to the first pattern onto a second mask substrate using a charged particle beam, and an addition unit configured to add a positional deviation amount of the first pattern having been written on the first mask substrate to a writing position of the second pattern, wherein the writing unit writes the second pattern at the writing position on the second mask substrate, where the positional deviation amount of the first pattern has been added.
Abstract:
Charged particle beam equipment having a rotary mechanism in which shift of the observing/machining position incident to the rotary operation of the equipment having the rotary mechanism can be corrected conveniently with high precision in a plane perpendicular to the optical axis of the optical system of charged particle beam or in a slightly inclining plane. An X-Y shift incident to rotation in a plane is determined from the angular information of a rotary mechanism such as a sample holder, diaphragms or biprisms in the charged particle beam equipment, and then driving or controlling is performed to cancel the X-Y shift.
Abstract:
An angular analysis system that can be controlled to receive radiation at a defined angle from a defined focus region. The angular analysis system is used for level 2 inspection in an explosive detection system. Level 2 inspection is provided by a three-dimensional inspection system that identifies suspicious regions of items under inspection. The angular analysis system is focused to gather radiation scattered at defined angles from the suspicious regions. Focusing may be achieved in multiple dimensions by movement of source and detector assemblies in a plane parallel to a plane holding the item under inspection. Focusing is achieved by independent motion of the source and detector assemblies. This focusing arrangement provides a compact device, providing simple, low cost and accurate operation.
Abstract:
A specimen holder is offered which can reduce the amount of chemical sprayed over a specimen consisting of cultured cells. The specimen holder has an open specimen-holding surface. At least a part of the specimen-holding surface is formed by a film and a tapering portion formed around the film. The specimen can be cultured on the specimen-holding surface of the film. The presence of the tapering portion can reduce the amount of used reagent. The specimen can be irradiated via the film with a primary beam for observation or inspection of the specimen. Consequently, the specimen, such as cells, can be well observed or inspected in vivo while the specimen is being cultured. Especially, if an electron beam is used as the primary beam, the specimen can be well observed or inspected in vivo by SEM (scanning electron microscopy).
Abstract:
An object of the present invention is to obtain a charged particle beam apparatus that includes a simplified sample positioning mechanism used with an electrostatic chuck, allow the sample to be released easily when residual attraction occurs, and enable observation throughout an entire area on an outer peripheral portion of the sample. To attain the object, the present invention provides a charged particle beam apparatus including, in a sample holding system for holding a sample, an outer peripheral part for holding the sample at the outer peripheral portion on a backside of the sample and raising and lowering the sample; a drive portion for raising and lowering the outer peripheral part; an electrostatic chuck for attracting the backside of the sample; and a part for correcting an electric field that is of substantially the same height as the peripheral portion of the sample when the sample is attracted onto the electrostatic chuck.