公开(公告)号：US08477551B1

公开(公告)日：2013-07-02

申请号：US13288152

申请日：2011-11-03

Applicant: Samuel S. Mao ,  Yanfeng Zhang

Inventor： Samuel S. Mao ,  Yanfeng Zhang

IPC: G11C13/04

CPC classification number: G11C13/047

Abstract: Optical memory comprising: a semiconductor wire, a first electrode, a second electrode, a light source, a means for producing a first voltage at the first electrode, a means for producing a second voltage at the second electrode, and a means for determining the presence of an electrical voltage across the first electrode and the second electrode exceeding a predefined voltage. The first voltage, preferably less than 0 volts, different from said second voltage. The semiconductor wire is optically transparent and has a bandgap less than the energy produced by the light source. The light source is optically connected to the semiconductor wire. The first electrode and the second electrode are electrically insulated from each other and said semiconductor wire.

Abstract translation: 光学存储器，包括：半导体线，第一电极，第二电极，光源，用于在第一电极产生第一电压的装置，用于在第二电极处产生第二电压的装置，以及用于确定 跨越第一电极和第二电极的电压的存在超过预定电压。 第一电压，优选小于0伏特，不同于所述第二电压。 半导体线是光学透明的，并且具有小于由光源产生的能量的带隙。 光源与半导体线光学连接。 第一电极和第二电极彼此电绝缘和所述半导体线。

公开(公告)号：US20120118723A1

公开(公告)日：2012-05-17

申请号：US13256421

申请日：2010-03-03

Applicant: Samuel S. Mao ,  Xiaobo Chen

Inventor： Samuel S. Mao ,  Xiaobo Chen

IPC: C01B3/04 ,  B01J21/06 ,  B01J37/00 ,  B01J37/02 ,  B01J19/12 ,  B01J35/02 ,  B01J37/34 ,  B82Y30/00

CPC classification number: B01J21/063 ,  B01J19/127 ,  B01J23/42 ,  B01J35/0006 ,  B01J35/002 ,  B01J35/004 ,  B01J35/02 ,  B01J37/0072 ,  B01J37/0215 ,  B01J37/0221 ,  B01J37/033 ,  B01J37/10 ,  B01J37/347 ,  B01J37/349 ,  B01J2219/1203 ,  B82Y30/00 ,  C01B3/042 ,  C01G23/047 ,  C01P2002/72 ,  C01P2002/85 ,  C01P2004/04 ,  C01P2004/64 ,  C01P2006/40 ,  C02F1/32 ,  C02F1/725 ,  Y10S977/762

Abstract: The present invention includes a nanostructure, a method of making thereof, and a method of photocatalysis. In one embodiment, the nanostructure includes a crystalline phase and an amorphous phase in contact with the crystalline phase. Each of the crystalline and amorphous phases has at least one dimension on a nanometer scale. In another embodiment, the nanostructure includes a nanoparticle comprising a crystalline phase and an amorphous phase. The amorphous phase is in a selected amount. In another embodiment, the nanostructure includes crystalline titanium dioxide and amorphous titanium dioxide in contact with the crystalline titanium dioxide. Each of the crystalline and amorphous titanium dioxide has at least one dimension on a nanometer scale.

Abstract translation: 本发明包括纳米结构，其制造方法和光催化方法。 在一个实施方案中，纳米结构包括与结晶相接触的结晶相和非晶相。 晶体和非晶相中的每一个具有至少一个纳米级的尺寸。 在另一个实施方案中，纳米结构包括包含结晶相和非晶相的纳米颗粒。 非晶相是选定量的。 在另一个实施方案中，纳米结构包括与结晶二氧化钛接触的结晶二氧化钛和无定形二氧化钛。 晶体和无定形二氧化钛中的每一个具有纳米级的至少一个维度。

公开(公告)号：US20110163242A1

公开(公告)日：2011-07-07

申请号：US12999909

申请日：2009-07-23

Applicant: Samuel S. Mao ,  Dale L. Perry

Inventor： Samuel S. Mao ,  Dale L. Perry

IPC: G01T3/08 ,  H01L31/115 ,  H01L31/18

CPC classification number: G01T3/08

Abstract: Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy α-particles or γ-photons generated by neutron interaction.

Abstract translation: 室温操作的固态手持式中子探测器将一个或多个相对较薄的高中子相互作用横截面元件或材料与半导体探测器集成在一起。 高中子相互作用横截面元素（例如Gd，B或Li）或包含至少一个高中子相互作用横截面元素的材料可以是非结构化层或微结构或纳米结构阵列的形式。 这种结构通过捕获由中子相互作用产生的高能α-粒子或γ光子产生的基本上更多的载体来提供高效中子探测器装置。

公开(公告)号：US20100247424A1

公开(公告)日：2010-09-30

申请号：US12599408

申请日：2008-05-22

Applicant: Samuel S. Mao ,  Xiaobo Chen ,  Arlon Hunt

Inventor： Samuel S. Mao ,  Xiaobo Chen ,  Arlon Hunt

IPC: C01B3/02 ,  B01J21/08 ,  B01J8/02 ,  B01J23/78

CPC classification number: B01D53/02 ,  B01D2253/106 ,  B01D2253/112 ,  B01D2253/304 ,  B01D2256/16 ,  C01B3/0026 ,  C01B3/0042 ,  C01B3/0078 ,  C01B3/0084 ,  F17C11/005 ,  Y02C10/08 ,  Y02E60/321 ,  Y02E60/327

Abstract: Materials based on nanoporous inorganic network materials and associated devices and methods for solid state storage of hydrogen and other gases are capable of greater storage capacity with improved availability of stored gases. Coated active oxide networks such as TiO2 and SiO2 aerogels as network materials are coated with selected inorganic catalytic materials and/or high gas storage capacity materials. A variety of coated nanoporous inorganic network materials are disclosed with material formulas X—Y; X being an inorganic coating, including one or more of nanoparticles, layered structure materials and intercalated materials; and Y being the inorganic nanoparticle network. At least one of the network and the coating comprises a catalyst for enhanced sorption of a gas to be stored, such as hydrogen.

Abstract translation: 基于纳米多孔无机网络材料和用于氢气和其他气体的固态储存的相关装置和方法的材料能够具有更大的存储容量并改善储存气体的可用性。 涂覆的活性氧化物网络如TiO 2和SiO 2气凝胶作为网络材料涂覆有选择的无机催化材料和/或高储气能力的材料。 公开了各种涂覆的纳米多孔无机网络材料，其具有材料式X-Y; X是无机涂层，包括一种或多种纳米颗粒，层状结构材料和插层材料; Y为无机纳米粒子网络。 网络和涂层中的至少一个包括用于增强吸附气体（例如氢气）的催化剂。

公开(公告)号：US07569941B2

公开(公告)日：2009-08-04

申请号：US11645241

申请日：2006-12-22

Applicant: Arun Majumdar ,  Ali Shakouri ,  Timothy D. Sands ,  Peidong Yang ,  Samuel S. Mao ,  Richard E. Russo ,  Henning Feick ,  Eicke R. Weber ,  Hannes Kind ,  Michael Huang ,  Haoquan Yan ,  Yiying Wu ,  Rong Fan

Inventor： Arun Majumdar ,  Ali Shakouri ,  Timothy D. Sands ,  Peidong Yang ,  Samuel S. Mao ,  Richard E. Russo ,  Henning Feick ,  Eicke R. Weber ,  Hannes Kind ,  Michael Huang ,  Haoquan Yan ,  Yiying Wu ,  Rong Fan

IPC: H01L29/201

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y20/00 ,  G02B6/107 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02554 ,  H01L21/02603 ,  H01L21/02645 ,  H01L21/02653 ,  H01L24/45 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/12 ,  H01L29/125 ,  H01L31/0352 ,  H01L33/06 ,  H01L33/18 ,  H01L33/24 ,  H01L35/00 ,  H01L41/094 ,  H01L41/18 ,  H01L41/183 ,  H01L2224/45565 ,  H01L2224/45599 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01058 ,  H01L2924/0106 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/01084 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01S5/341 ,  H01S5/3412 ,  Y10S977/762 ,  Y10S977/763 ,  Y10S977/764 ,  Y10S977/765 ,  Y10S977/951 ,  Y10T428/24994 ,  Y10T428/249949 ,  Y10T428/29 ,  Y10T428/2913 ,  Y10T428/2916 ,  Y10T428/292 ,  Y10T428/2933 ,  Y10T428/2958 ,  Y10T428/2973 ,  Y10T428/298 ,  H01L2924/00011 ,  H01L2924/00 ,  H01L2224/48

Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

公开(公告)号：US20140202850A1

公开(公告)日：2014-07-24

申请号：US14245139

申请日：2014-04-04

Applicant: Coleman X. Kronawitter ,  Samuel S. Mao

Inventor： Coleman X. Kronawitter ,  Samuel S. Mao

IPC: H01G9/20 ,  H01G9/00

CPC classification number: H01G9/2027 ,  C25B1/04 ,  C25B11/0405 ,  H01G9/0029 ,  H01M14/005 ,  Y02E60/366 ,  Y02E70/10

Abstract: This disclosure provides systems, methods, and apparatus related to photoelectrodes. In one aspect, a photoelectrode may include a substrate including an electrically conductive surface and at least one nanostructure in electrical contact with the surface of the substrate. The nanostructure may include an impurity. The impurity may impart a light-absorbing characteristic to the nanostructure.

Abstract translation: 本公开提供了与光电极相关的系统，方法和装置。 在一个方面，光电极可以包括包含导电表面和至少一个与衬底表面电接触的纳米结构的衬底。 纳米结构可以包括杂质。 杂质可以赋予纳米结构光吸收特性。

公开(公告)号：US07834264B2

公开(公告)日：2010-11-16

申请号：US11645236

申请日：2006-12-22

Applicant: Arun Majumdar ,  Ali Shakouri ,  Timothy D. Sands ,  Peidong Yang ,  Samuel S. Mao ,  Richard E. Russo ,  Henning Feick ,  Eicke R. Weber ,  Hannes Kind ,  Michael Huang ,  Haoquan Yan ,  Yiying Wu ,  Rong Fan

Inventor： Arun Majumdar ,  Ali Shakouri ,  Timothy D. Sands ,  Peidong Yang ,  Samuel S. Mao ,  Richard E. Russo ,  Henning Feick ,  Eicke R. Weber ,  Hannes Kind ,  Michael Huang ,  Haoquan Yan ,  Yiying Wu ,  Rong Fan

IPC: H01L35/00 ,  H01L35/02 ,  H01L35/12

CPC classification number: H01L29/0665 ,  B82Y10/00 ,  B82Y20/00 ,  G02B6/107 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/02554 ,  H01L21/02603 ,  H01L21/02645 ,  H01L21/02653 ,  H01L24/45 ,  H01L29/0673 ,  H01L29/0676 ,  H01L29/068 ,  H01L29/12 ,  H01L29/125 ,  H01L31/0352 ,  H01L33/06 ,  H01L33/18 ,  H01L33/24 ,  H01L35/00 ,  H01L41/094 ,  H01L41/18 ,  H01L41/183 ,  H01L2224/45565 ,  H01L2224/45599 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/0101 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/0103 ,  H01L2924/01031 ,  H01L2924/01032 ,  H01L2924/01039 ,  H01L2924/01047 ,  H01L2924/01051 ,  H01L2924/01052 ,  H01L2924/01058 ,  H01L2924/0106 ,  H01L2924/01061 ,  H01L2924/01068 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01077 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01083 ,  H01L2924/01084 ,  H01L2924/04953 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/12036 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13062 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2924/30107 ,  H01S5/341 ,  H01S5/3412 ,  Y10S977/762 ,  Y10S977/763 ,  Y10S977/764 ,  Y10S977/765 ,  Y10S977/951 ,  Y10T428/24994 ,  Y10T428/249949 ,  Y10T428/29 ,  Y10T428/2913 ,  Y10T428/2916 ,  Y10T428/292 ,  Y10T428/2933 ,  Y10T428/2958 ,  Y10T428/2973 ,  Y10T428/298 ,  H01L2924/00011 ,  H01L2924/00 ,  H01L2224/48

Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Abstract translation: 具有小于约200nm的均匀直径的一维纳米结构。 这些本发明的纳米结构，我们称之为“纳米线”，包括具有不同化学成分的至少两种单晶材料的单晶均匀结构以及异质结构。 由于使用单晶材料来形成异质结构，所以得到的异质结构也将是单晶的。 纳米线异质结构通常基于半导体线，其中掺杂和组成在纵向或径向方向上或在两个方向上被控制，以产生包括不同材料的导线。 所得纳米线异质结构的实例包括纵向异质结构纳米线（LOHN）和同轴异质结构纳米线（COHN）。

公开(公告)号：US20150190785A1

公开(公告)日：2015-07-09

申请号：US14664341

申请日：2015-03-20

Applicant: Samuel S. Mao ,  Xiaobo Chen

Inventor： Samuel S. Mao ,  Xiaobo Chen

IPC: B01J21/06 ,  B01J37/02 ,  C01B3/04 ,  B01J37/00 ,  B01J35/02 ,  B01J19/12 ,  B01J35/00 ,  B01J37/34

CPC classification number: B01J21/063 ,  B01J19/127 ,  B01J23/42 ,  B01J35/0006 ,  B01J35/002 ,  B01J35/004 ,  B01J35/02 ,  B01J37/0072 ,  B01J37/0215 ,  B01J37/0221 ,  B01J37/033 ,  B01J37/10 ,  B01J37/347 ,  B01J37/349 ,  B01J2219/1203 ,  B82Y30/00 ,  C01B3/042 ,  C01G23/047 ,  C01P2002/72 ,  C01P2002/85 ,  C01P2004/04 ,  C01P2004/64 ,  C01P2006/40 ,  C02F1/32 ,  C02F1/725 ,  Y10S977/762

Abstract: The present invention includes a nanostructure, a method of making thereof, and a method of photocatalysis. In one embodiment, the nanostructure includes a crystalline phase and an amorphous phase in contact with the crystalline phase. Each of the crystalline and amorphous phases has at least one dimension on a nanometer scale. In another embodiment, the nanostructure includes a nanoparticle comprising a crystalline phase and an amorphous phase. The amorphous phase is in a selected amount. In another embodiment, the nanostructure includes crystalline titanium dioxide and amorphous titanium dioxide in contact with the crystalline titanium dioxide. Each of the crystalline and amorphous titanium dioxide has at least one dimension on a nanometer scale.

Abstract translation: 本发明包括纳米结构，其制造方法和光催化方法。 在一个实施方案中，纳米结构包括与结晶相接触的结晶相和非晶相。 晶体和非晶相中的每一个具有至少一个纳米级的尺寸。 在另一个实施方案中，纳米结构包括包含结晶相和非晶相的纳米颗粒。 非晶相是选定量的。 在另一个实施方案中，纳米结构包括与结晶二氧化钛接触的结晶二氧化钛和无定形二氧化钛。 晶体和无定形二氧化钛中的每一个具有纳米级的至少一个维度。

公开(公告)号：US08580130B2

公开(公告)日：2013-11-12

申请号：US12743550

申请日：2008-12-16

Applicant: Samuel S. Mao ,  Costas P. Grigoropoulos ,  David J. Hwang ,  Andrew M. Minor

Inventor： Samuel S. Mao ,  Costas P. Grigoropoulos ,  David J. Hwang ,  Andrew M. Minor

IPC: B44C1/22

CPC classification number: C23C16/047 ,  G01Q80/00 ,  G03F1/72 ,  G03F1/82 ,  G03F7/0002 ,  Y10T156/1158

Abstract: Laser-assisted apparatus and methods for performing nanoscale material processing, including nanodeposition of materials, can be controlled very precisely to yield both simple and complex structures with sizes less than 100 nm. Optical or thermal energy in the near field of a photon (laser) pulse is used to fabricate submicron and nanometer structures on a substrate. A wide variety of laser material processing techniques can be adapted for use including, subtractive (e.g., ablation, machining or chemical etching), additive (e.g., chemical vapor deposition, selective self-assembly), and modification (e.g., phase transformation, doping) processes. Additionally, the apparatus can be integrated into imaging instruments, such as SEM and TEM, to allow for real-time imaging of the material processing.

Abstract translation: 可以非常精确地控制用于进行纳米尺度材料加工的激光辅助装置和方法，包括材料的纳米沉积，以产生尺寸小于100nm的简单和复杂结构。 在光子（激光）脉冲的近场中的光学或热能用于在衬底上制造亚微米和纳米结构。 各种激光材料加工技术可以适用于包括减法（例如，消融，机械加工或化学蚀刻），添加剂（例如化学气相沉积，选择性自组装）和修饰（例如相变，掺杂 ）进程。 此外，该装置可以集成到诸如SEM和TEM的成像仪器中，以允许材料处理的实时成像。

公开(公告)号：US08324651B2

公开(公告)日：2012-12-04

申请号：US12297615

申请日：2007-04-26

Applicant: Samuel S. Mao ,  Gao Liu ,  Stephen G. Johnson

Inventor： Samuel S. Mao ,  Gao Liu ,  Stephen G. Johnson

IPC: H01L33/00

CPC classification number: H01L51/5203 ,  B82Y10/00 ,  H01L51/0018 ,  H01L51/0021 ,  H01L51/0048 ,  H01L51/5234 ,  H01L2251/5369 ,  Y10T428/24479

Abstract: A cathode that contain nanostructures that extend into the organic layer of an OLED has been described. The cathode can have an array of nanotubes or a layer of nanoclusters extending out from its surface. In another arrangement, the cathode is patterned and etched to form protruding nanostructures using a standard lithographic process. Various methods for fabricating these structures are provided, all of which are compatible with large-scale manufacturing. OLEDs made with these novel electrodes have greatly enhanced electron injection, have good environmental stability.

Abstract translation: 已经描述了包含延伸到OLED的有机层中的纳米结构的阴极。 阴极可以具有从其表面延伸出的纳米管阵列或纳米簇的阵列。 在另一种布置中，使用标准光刻工艺对阴极进行图案化和蚀刻以形成突出的纳米结构。 提供了用于制造这些结构的各种方法，所有这些都与大规模制造兼容。 用这些新型电极制成的OLED大大增强了电子注入，具有良好的环境稳定性。