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    HIGH THERMOELECTRIC PERFORMANCE BY CONVERGENCE OF BANDS IN IV-VI SEMICONDUCTORS, HEAVILY DOPED PbTe, AND ALLOYS/NANOCOMPOSITES
    71.
    发明申请
    HIGH THERMOELECTRIC PERFORMANCE BY CONVERGENCE OF BANDS IN IV-VI SEMICONDUCTORS, HEAVILY DOPED PbTe, AND ALLOYS/NANOCOMPOSITES 有权
    Ⅳ-VI族半导体，重金属PbTe和合金/纳米复合材料中银团聚合的高热电性能

    公开(公告)号：US20120138870A1

    公开(公告)日：2012-06-07

    申请号：US13287941

    申请日：2011-11-02

    申请人： G. Jeffrey Snyder ,  Yanzhong Pei

    发明人： G. Jeffrey Snyder ,  Yanzhong Pei

    IPC分类号： H01B1/02 ,  C01B19/00 ,  C01B19/04

    CPC分类号： H01L35/16

    摘要： The present invention teaches an effective mechanism for enhancing thermoelectric performance through additional conductive bands. Using heavily doped p-PbTe materials as an example, a quantitative explanation is disclosed, as to why and how these additional bands affect the figure of merit. A high zT of approaching 2 at high temperatures makes these simple, likely more stable (than nanostructured materials) and Tl-free materials excellent for thermoelectric applications.

    摘要翻译： 本发明教导了通过附加导电带增强热电性能的有效机理。 使用重掺杂的p-PbTe材料作为示例，公开了定量解释，关于这些附加条带为什么以及如何影响品质因数。 在高温下接近2的高zT使得这些简单，可能更稳定（比纳米结构材料）和不受热电应用优异的无钛材料。

    Method of Producing Stable Oxygen Terminated Semiconducting Nanoparticles
    73.
    发明申请
    Method of Producing Stable Oxygen Terminated Semiconducting Nanoparticles 有权
    生产稳定的氧终止半导体纳米颗粒的方法

    公开(公告)号：US20120018551A1

    公开(公告)日：2012-01-26

    申请号：US12991879

    申请日：2009-04-09

    申请人： David Thomas Britton ,  Margit Harting

    发明人： David Thomas Britton ,  Margit Harting

    IPC分类号： B02C23/00 ,  C01B33/02 ,  C01G21/21 ,  B01J19/00 ,  C01B19/04 ,  B82Y40/00 ,  B82Y30/00

    CPC分类号： B02C23/06 ,  B02C17/00 ,  B02C17/20 ,  B22F9/20 ,  B22F2009/041 ,  B22F2009/043 ,  B22F2009/049 ,  B22F2999/00 ,  C01B19/002 ,  C01B19/007 ,  C01B33/02 ,  C01B33/113 ,  C01G21/21 ,  C01G28/00 ,  C01G30/00 ,  C01P2002/82 ,  C01P2004/04 ,  C01P2006/40 ,  C09K11/62 ,  C09K11/668 ,  C09K11/70 ,  C09K11/74 ,  C09K11/75 ,  C09K11/881 ,  C09K11/883 ,  C22C1/0491 ,  B22F9/04

    摘要： A method is provided of producing inorganic semiconducting nanoparticles having a stable surface. The method comprises providing an inorganic bulk semiconductor material, such as silicon or germanium, and milling the bulk semiconductor material in the presence of a selected reducing agent. The reducing agent acts to chemically reduce oxides of one or more component elements of the semiconductor material, or prevent the formation of such oxides by being preferentially oxidised, thereby to provide semiconducting nanoparticles having a stable surface which allows electrical contact between the nanoparticles. The milling may take place in a mill in which the milling media and/or one or more components of the mill comprise the selected reducing agent. For example, the milling can be carried out in a high energy mill with a hammer action in which a pestle of the mill, a mortar of the mill, or both are composed of the selected reducing agent, or a low energy, stirred media mill, such as a ball mill, a rod mill or similar, in which the milling media, a lining of the mill, or both are composed of the reducing agent. The milling media or mill are typically composed of a metal selected from the group comprising iron, chromium, cobalt, nickel, tin, titanium, tungsten, vanadium, and aluminium, or an alloy containing one or more of said metals. In another embodiment of the method, the selected reducing agent comprises a liquid contained in the mill during milling of the bulk semiconductor material. The liquid is typically an acidic solution containing any of hydrochloric, sulphuric, nitric, acetic, formic, or carbonic acid, or a mixture thereof. The invention extends to a mill for carrying out the method.

    摘要翻译： 提供了制备具有稳定表面的无机半导体纳米颗粒的方法。 该方法包括提供诸如硅或锗之类的无机体半导体材料，以及在选择的还原剂存在下研磨体半导体材料。 还原剂用于化学还原半导体材料的一种或多种组分元素的氧化物，或通过优先氧化来防止形成这种氧化物，从而提供具有允许纳米颗粒之间电接触的稳定表面的半导体纳米颗粒。 研磨可以在其中研磨介质和/或研磨机的一个或多个组分包含所选择的还原剂的研磨机中进行。 例如，铣削可以在具有锤击作用的高能磨机中进行，其中研磨机的研杵，研磨机的砂浆或两者均由选择的还原剂或低能量的搅拌介质研磨机 ，例如球磨机，棒磨机或类似物，其中研磨介质，研磨机的衬里或两者都由还原剂组成。 研磨介质或研磨机通常由选自铁，铬，钴，镍，锡，钛，钨，钒和铝的金属或含有一种或多种所述金属的合金组成。 在该方法的另一个实施方案中，所选择的还原剂包括在研磨体内半导体材料期间包含在研磨机中的液体。 液体通常是含有盐酸，硫酸，硝酸，乙酸，甲酸或碳酸中的任何一种或其混合物的酸性溶液。 本发明延伸到用于实施该方法的轧机。

    Assemblies of anisotropic nanoparticles
    75.
    发明授权
    Assemblies of anisotropic nanoparticles 有权
    各向异性纳米粒子组件

    公开(公告)号：US07939048B2

    公开(公告)日：2011-05-10

    申请号：US11981871

    申请日：2007-10-31

    申请人： Billy J. Stanbery

    发明人： Billy J. Stanbery

    IPC分类号： C01B19/04 ,  C07C1/00 ,  B05D3/02 ,  B05D5/12 ,  B05D1/36 ,  H01L31/00

    CPC分类号： C30B29/60 ,  B82Y30/00 ,  C30B29/46 ,  C30B29/605 ,  C30B33/00 ,  Y10S977/786 ,  Y10S977/81

    摘要： Methods for assemblies of anisotropic nanoparticles which includes forming a substantially close packed dense layer by assembling a plurality of anisotropic nanoparticles, each of the plurality of anisotropic nanoparticles having a) a first dimension that is substantially different than both a second dimension and a third dimension and b) a non-random nanoparticle crystallographic orientation that is substantially aligned with the first direction, wherein assembling includes mechanically interacting the plurality of anisotropic nanoparticles by imposing a delocalized force that defines a direction that is substantially perpendicular to a basal plane of the substantially closed packed dense layer; and imposing a fluctuating force to which the anisotropic nanoparticles respond, which is sufficient to overcome a short range weak attractive force between members of the plurality of anisotropic nanoparticles with respect to anisotropic nanoparticles that are not substantially overlapping.

    摘要翻译： 各向异性纳米颗粒的组装方法包括通过组装多个各向异性纳米颗粒形成基本紧密堆积的致密层，所述多个各向异性纳米颗粒中的每一个具有a）与第二尺寸和第三尺寸基本不同的第一尺寸，以及 b）基本上与第一方向对齐的非随机纳米颗粒晶体取向，其中组装包括通过施加限定了基本上垂直于基本上封闭的包装的基础平面的方向的离域力来机械地相互作用多个各向异性纳米颗粒 致密层; 并且施加各向异性纳米颗粒响应的波动力，其足以克服多个各向异性纳米颗粒的成员之间相对于基本上不重叠的各向异性纳米颗粒的短程度弱吸引力。

    SILVER SELENIDE SPUTTERED FILMS AND METHOD AND APPARATUS FOR CONTROLLING DEFECT FORMATION IN SILVER SELENIDE SPUTTERED FILMS
    76.
    发明申请
    SILVER SELENIDE SPUTTERED FILMS AND METHOD AND APPARATUS FOR CONTROLLING DEFECT FORMATION IN SILVER SELENIDE SPUTTERED FILMS 审中-公开
    用于控制银塞子溅射膜中的缺陷形成的银色溅射膜和方法和装置

    公开(公告)号：US20110014115A1

    公开(公告)日：2011-01-20

    申请号：US12841035

    申请日：2010-07-21

    申请人： Jiutao Li ,  Allen McTeer

    发明人： Jiutao Li ,  Allen McTeer

    IPC分类号： C01B19/04

    CPC分类号： C23C14/3492 ,  C23C14/0623

    摘要： Method and apparatus for sputter depositing silver selenide and controlling defect formation in and on a sputter deposited silver selenide film are provided. A method of forming deposited silver selenide comprising both alpha and beta phases is further provided. The methods include depositing silver selenide using sputter powers of less than about 200 W, using sputter power densities of less than about 1 W/cm2, using sputter pressures of less than about 40 mTorr and preferably less than about 10 mTorr, using sputter gasses with molecular weight greater than that of neon, using cooling apparatus having a coolant flow rate at least greater than 2.5 gallons per minute and a coolant temperature less than about 25° C., using a magnetron sputtering system having a magnetron placed a sufficient distance from a silver selenide sputter target so as to maintain a sputter target temperature of less than about 350° C. and preferably below about 250° C. during sputter deposition, and heating the sputter deposition substrate to greater than about 30° C.

    摘要翻译： 提供了用于溅射沉积硒化银并控制溅射沉积的硒化银膜上及其上的缺陷形成的方法和装置。 还提供了形成包含α相和β相的沉积的硒化银的方法。 所述方法包括使用小于约200W的溅射功率，使用小于约1W / cm 2的溅射功率密度，使用小于约40mTorr，优选小于约10mTorr的溅射压力沉积硒化银，使用溅射气体与 使用具有至少大于2.5加仑/分钟的冷却剂流速和小于约25℃的冷却剂温度的冷却装置，使用磁控溅射系统，该磁控溅射系统具有放置在距离 硒化银溅射靶，以便在溅射沉积期间将溅射靶温度保持在小于约350℃，优选低于约250℃，并将溅射沉积衬底加热至大约30℃。

    Metal telluride nanocrystals and synthesis thereof
    77.
    发明授权
    Metal telluride nanocrystals and synthesis thereof 失效
    金属碲化物纳米晶体及其合成

    公开(公告)号：US07790137B2

    公开(公告)日：2010-09-07

    申请号：US11464265

    申请日：2006-08-14

    申请人： Qiangfeng Xiao ,  Yunfeng Lu ,  Minjuan Zhang

    发明人： Qiangfeng Xiao ,  Yunfeng Lu ,  Minjuan Zhang

    IPC分类号： C01B19/04

    CPC分类号： C01B19/007 ,  B82Y30/00 ,  C01B19/002 ,  C01P2002/72 ,  C01P2004/04 ,  C01P2004/64 ,  C04B35/547 ,  C04B35/6263 ,  C04B35/6325 ,  C04B35/636 ,  C04B35/6455 ,  C04B2235/3293 ,  C04B2235/3296 ,  C04B2235/3298 ,  C04B2235/449 ,  C04B2235/604 ,  C04B2235/6581 ,  C04B2235/661 ,  C04B2235/77 ,  C04B2235/781

    摘要： A process for synthesizing a metal telluride is provided that includes the dissolution of a metal precursor in a solvent containing a ligand to form a metal-ligand complex soluble in the solvent. The metal-ligand complex is then reacted with a telluride-containing reagent to form metal telluride domains having a mean linear dimension of from 2 to 40 nanometers. NaHTe represents a well-suited telluride reagent. A composition is provided that includes a plurality of metal telluride crystalline domains (PbTe)1-x-y(SnTe)x(Bi2Te3)y  (I) having a mean linear dimension of from 2 to 40 nanometers inclusive where x is between 0 and 1 inclusive and y is between 0 and 1 inclusive with the proviso that x+y is less than or equal to 1. Each of the metal telluride crystalline domains has a surface passivated with a saccharide moiety or a polydentate carboxylate. A densified mass having a density of greater than 95% of the theoretical density includes a plurality of lead telluride, tin telluride, bismuth telluride, or a combination thereof of domains having a mean linear dimension of from 2 to 40 nanometers inclusive that have been subjected to hot isotactic pressing.

    摘要翻译： 提供了合成金属碲化物的方法，其包括将金属前体溶解在含有配体的溶剂中以形成可溶于溶剂的金属 - 配体络合物。 然后将金属 - 配体络合物与含碲化物的试剂反应以形成平均直线尺寸为2-40纳米的金属碲化物畴。 NaHTe代表一种非常适合的碲化物试剂。 提供一种组合物，其包含多个金属碲化物晶体结构域（PbTe）1-xy（SnTe）x（Bi 2 Te 3）y（I），其平均直线尺寸为2至40纳米，其中x在0和1之间 并且y在0和1之间，其中x + y小于或等于1.每个金属碲化物结晶域具有用糖部分或多齿羧酸酯钝化的表面。 具有大于理论密度的95％的密度的致密物质包括多个引线碲化物，碲化锡，碲化铋或其具有平均线性尺寸为2至40纳米的畴的组合，其已经经受 到热等压挤压。

    Preparation of Stable, Bright Luminescent Nanoparticles Having Compositionally Engineered Properties
    78.
    发明申请
    Preparation of Stable, Bright Luminescent Nanoparticles Having Compositionally Engineered Properties 有权
    具有组成性能的稳定，明亮的发光纳米颗粒的制备

    公开(公告)号：US20100059713A1

    公开(公告)日：2010-03-11

    申请号：US12484836

    申请日：2009-06-15

    申请人： Marc Schrier ,  Donald A. Zehnder ,  Joseph A. Treadway ,  Joseph A. Bartel

    发明人： Marc Schrier ,  Donald A. Zehnder ,  Joseph A. Treadway ,  Joseph A. Bartel

    IPC分类号： C09K11/54 ,  C01B19/04

    CPC分类号： H01L33/28 ,  B82Y30/00 ,  C01P2004/04 ,  C01P2004/64 ,  C09C1/10 ,  C09K11/02 ,  C09K11/565 ,  C09K11/883 ,  Y10S977/824 ,  Y10S977/834 ,  Y10T428/2991

    摘要： A method is provided for preparing luminescent semiconductor nanoparticles composed of a first component X, a second component A, and a third component B, wherein X, A, and B are different, by combining B with X and A in an amount such that the molar ratio B:(A+B) is in the range of approximately 0.001 to 0.20 and the molar ratio X:(A+B) is in the range of approximately 0.5:1.0 to 2:1. The characteristics of the thus-prepared nanoparticles can be substantially similar to those of nanoparticles containing only X and B while maintaining many useful properties characteristic of nanoparticles containing only X and A. The nanoparticles so prepared can additionally exhibit emergent properties such as a peak emission energy less than that characteristic of a particle composed of XA or XB alone; this method is particularly applicable to the preparation of stable, bright nanoparticles that emit in the red to infrared regions of the electromagnetic spectrum. Luminescent semiconductor nanoparticles having exemplary properties are also provided.

    摘要翻译： 提供一种制备由第一组分X，第二组分A和第三组分B组成的发光半导体纳米颗粒的方法，其中X，A和B不同，通​​过将B与X和A组合使得其量使得 摩尔比B：（A + B）在约0.001至0.20的范围内，摩尔比X：（A + B）在约0.5:1.0至2:1的范围内。 如此制备的纳米颗粒的特征可以与仅含有X和B的纳米颗粒的特征基本相似，同时保持了仅含有X和A的纳米颗粒的许多有用特性。如此制备的纳米颗粒可另外显示出出现的特性，例如峰值发射能 小于单独由XA或XB组成的颗粒的特征; 该方法特别适用于在电磁光谱的红色至红外区域中发射的稳定的明亮纳米粒子的制备。 还提供了具有示例性质的发光半导体纳米颗粒。

    Controlled synthesis of nanoparticles using continuous liquid-flow aerosol method
    79.
    发明申请
    Controlled synthesis of nanoparticles using continuous liquid-flow aerosol method 有权
    使用连续液流气溶胶法控制纳米粒子的合成

    公开(公告)号：US20100028249A1

    公开(公告)日：2010-02-04

    申请号：US12287530

    申请日：2008-10-09

    申请人： Yuri T. Didenko ,  Yuhua Ni

    发明人： Yuri T. Didenko ,  Yuhua Ni

    IPC分类号： C01B19/04 ,  B01J19/10

    CPC分类号： C30B7/00 ,  B22F9/24 ,  B22F9/28 ,  B22F2998/00 ,  C30B29/48 ,  C30B29/60 ,  Y10S977/773 ,  Y10S977/774 ,  Y10S977/775 ,  Y10S977/811 ,  Y10S977/824 ,  B22F1/0018

    摘要： A method and apparatus for producing surface stabilized nanometer-sized particles includes the steps of mixing reactants, a surface-stabilizing surfactant, and a high boiling point liquid to form a mixture, continuously passing the mixture through an ultrasonic spray nozzle to form a mist of droplets of the mixture, injecting the mist directly into a furnace to cause a reaction between species of the mixture, and collecting the nanometer-sized products. The ultrasonic nozzle is positioned directly at one end of the heating furnace, preferably the top end, for travel of the droplets through the furnace. The continuous liquid-flow process, along with certain operating parameters, eliminates the need for dilution of the high boiling point liquid with a low boiling point solvent as in the prior art, significantly increases the yield, improves the quality of the product, and makes the process scalable.

    摘要翻译： 用于制备表面稳定的纳米尺寸颗粒的方法和装置包括以下步骤：将反应物，表面稳定表面活性剂和高沸点液体混合以形成混合物，连续地使混合物通过超声波喷嘴以形成 混合物的液滴，将雾直接注入炉中以引起混合物的种类之间的反应，并收集纳米尺寸的产品。 超声波喷嘴直接位于加热炉的一端，优选地位于顶端，用于液滴通过炉的移动。 连续的液流过程连同一些操作参数，消除了如现有技术中用低沸点溶剂稀释高沸点液体的需要，显着增加了产量，提高了产品的质量，并使得 流程可扩展。