公开(公告)号：US08847202B1

公开(公告)日：2014-09-30

申请号：US13351997

申请日：2012-01-17

申请人： Brett Z. Nosho ,  Rajesh D. Rajavel ,  Hasan Sharifi ,  Sevag Terterian

发明人： Brett Z. Nosho ,  Rajesh D. Rajavel ,  Hasan Sharifi ,  Sevag Terterian

IPC分类号： H01L31/00 ,  H01L31/02 ,  H01L31/109 ,  H01L31/11 ,  H01L31/065

CPC分类号： H01L31/035236 ,  H01L31/02016 ,  H01L31/065 ,  H01L31/09 ,  H01L31/1013 ,  H01L31/109 ,  H01L31/11 ,  H01L31/18 ,  H01L31/184 ,  Y02E10/544 ,  Y02P70/521

摘要： A dual-band infrared detector structure based on Type-II superlattices (T2SL) has been developed and experimentally validated. The structure according to the principles of the present invention is designed for a single Indium bump architecture and utilizes a T2SL barrier design that omits the traditional p-n junction region. The barrier design comprises multiple periods where each period comprises multiple monolayers doped P type. By selecting the composition, number of monolayers per period and number of periods, a transition region is created in the conduction band between a first absorber layer and a second absorber layer that allows operation at low biases (

摘要翻译： 基于II型超晶格（T2SL）的双频带红外探测器结构已被开发和实验验证。 根据本发明的原理的结构被设计用于单个铟凸块结构并且利用省略传统p-n结区域的T2SL屏障设计。 屏障设计包括多个周期，其中每个周期包括多个单层掺杂的P型。 通过选择组合物，每个周期的单层数和周期数，在第一吸收层和第二吸收层之间的导带中产生过渡区，其允许以低偏差（对于两个带为<100mV）进行操作和显示 较长波段的暗电流密度可与使用单色检测器获得的相当。

公开(公告)号：US20140196777A1

公开(公告)日：2014-07-17

申请号：US14151345

申请日：2014-01-09

申请人： LG ELECTRONICS INC.

发明人： Dohwan YANG ,  Juhong YANG ,  Ilhyoung JUNG ,  Jinah KIM

IPC分类号： H01L31/065 ,  H01L31/18

CPC分类号： H01L31/065 ,  H01L31/02167 ,  H01L31/0682 ,  H01L31/1804 ,  H01L31/1864 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell and a method for manufacturing the solar cell are discussed. An embodiment of the method includes forming an emitter region containing impurities of a second conductive type opposite a first conductive type at a back surface of a semiconductor substrate containing impurities of the first conductive type, forming a passivation layer paste containing impurities of the first conductive type on the emitter region, selectively performing a thermal process on a first partial area of the passivation layer paste to form a back surface field region containing impurities of the first conductive type at a partial area of the emitter region, forming a plurality of openings in partial areas of the passivation layer paste to form a passivation layer, forming a first electrode connected to the emitter region, and forming a second electrode connected to the back surface field region.

摘要翻译： 讨论太阳能电池和太阳能电池的制造方法。 该方法的一个实施例包括在包含第一导电类型的杂质的半导体衬底的背表面上形成含有与第一导电类型相反的第二导电类型的杂质的发射极区域，形成含有第一导电类型杂质的钝化层糊料 在所述发射极区域上，选择性地对所述钝化层浆料的第一部分区域进行热处理，以在所述发射极区域的部分区域处形成包含所述第一导电类型的杂质的背面场区域，部分地形成多个开口 钝化层的区域形成钝化层，形成连接到发射极区的第一电极，形成连接到背面场区的第二电极。

公开(公告)号：US20140166086A1

公开(公告)日：2014-06-19

申请号：US14105828

申请日：2013-12-13

申请人： Daniel Scott Marshall

发明人： Daniel Scott Marshall

IPC分类号： H01L31/065

摘要： A magnetically polarized photonic device is provided. The magnetically polarized photonic device (100) includes substrate (102), an annihilation layer (106) and a graded band gap layer (142). The annihilation layer (106) is deposed on a surface (104) of substrate (102) with graded band gap layer (142) disposed on annihilation layer (106). Contacts (116, 128) are disposed on ends (146, 150) of magnetically polarized photonic device (100). A magnetic field (159) is applied to graded band gap layer (142) and annihilation layer (106) to drive charges to contacts (116, 128).

摘要翻译： 提供了磁极化光子器件。 磁偏振光子器件（100）包括衬底（102），湮灭层（106）和渐变带隙层（142）。 湮灭层（106）被放置在具有设置在湮灭层（106）上的渐变带隙层（142）的衬底（102）的表面（104）上。 触点（116,128）设置在磁极化光子器件（100）的端部（146,150）上。 将磁场（159）施加到渐变带隙层（142）和湮灭层（106），以驱动对触点（116,128）的电荷。

公开(公告)号：US20140158191A1

公开(公告)日：2014-06-12

申请号：US14235813

申请日：2012-05-23

申请人： Myung Seok Shim

发明人： Myung Seok Shim

IPC分类号： H01L31/065 ,  H01L31/068 ,  H01L31/18

CPC分类号： H01L31/065 ,  H01L31/0322 ,  H01L31/046 ,  H01L31/0465 ,  H01L31/068 ,  H01L31/0749 ,  H01L31/1884 ,  Y02E10/541 ,  Y02P70/521

摘要： A solar cell includes a substrate; a back electrode layer provided on the substrate; a light absorbing layer provided on the back electrode layer; a transparent electrode layer provided on the light absorbing layer; and an impurity doping layer provided between the light absorbing layer and the transparent electrode layer. In the solar cell, contact resistance during contact of the transparent electrode layer with the back electrode layer is reduced by making an impurity doping amount of the impurity doping layer greater than that of the transparent electrode layer.

摘要翻译： 太阳能电池包括基板; 设置在所述基板上的背面电极层; 设置在背面电极层上的光吸收层; 设置在所述光吸收层上的透明电极层; 以及设置在光吸收层和透明电极层之间的杂质掺杂层。 在太阳能电池中，通过使杂质掺杂层的杂质掺杂量大于透明电极层的杂质掺杂量，可以降低透明电极层与背面电极层的接触时的接触电阻。

公开(公告)号：US20140158190A1

公开(公告)日：2014-06-12

申请号：US14180120

申请日：2014-02-13

申请人： Intermolecular, Inc.

发明人： Haifan Liang ,  Jeroen Van Duren

IPC分类号： H01L31/065 ,  H01L31/032

CPC分类号： H01L31/065 ,  H01L21/02472 ,  H01L21/02485 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02568 ,  H01L21/02614 ,  H01L31/0322 ,  H01L31/0326 ,  H01L31/0749 ,  Y02E10/541

摘要： Methods are described for forming CIGS absorber layers in TFPV devices with graded compositions and graded band gaps. Methods are described for utilizing Al to increase the band gap at the front surface of the absorber layer. Methods are described for forming a Cu—In—Ga layer followed by partial or full selenization. This results in a higher Ga concentration at the back interface. The substrate is then exposed to an aluminum CVD precursor while the substrate is still in the selenization equipment to deposit a thin Al layer. The substrate is then exposed to a Se source to fully convert the absorber layer. This results in a higher Al concentration at the front of the absorber.

摘要翻译： 描述了用于在具有渐变组成和分级带隙的TFPV装置中形成CIGS吸收层的方法。 描述了利用Al增加吸收层前表面带隙的方法。 描述了用于形成Cu-In-Ga层的方法，然后进行部分或全部硒化。 这导致在后界面处的较高的Ga浓度。 然后将衬底暴露于铝CVD前体，同时衬底仍然在硒化设备中以沉积薄的Al层。 然后将衬底暴露于Se源以完全转换吸收层。 这导致吸收器前面的较高的Al浓度。

公开(公告)号：US20140069492A1

公开(公告)日：2014-03-13

申请号：US14114895

申请日：2012-05-29

申请人： Shinichi Abe ,  Akio Yamamoto ,  Seiji Oguri ,  Kazumasa Umesato

发明人： Shinichi Abe ,  Akio Yamamoto ,  Seiji Oguri ,  Kazumasa Umesato

IPC分类号： H01L31/065

CPC分类号： H01L31/065 ,  H01L31/0322 ,  H01L31/046 ,  H01L31/0465 ,  H01L31/0749 ,  Y02E10/541

摘要： A photoelectric conversion device is disclosed. The photoelectric conversion device includes an electrode layer and a semiconductor layer. The semiconductor layer is located on the electrode layer and contains a group I-III-VI compound. In the semiconductor layer, an atomic ratio of a group I-B element to a group III-B element decreases from one principal surface side of the semiconductor layer on the electrode layer side to a central portion in a thickness direction and increases from the central portion to another principal surface side on a side opposite to the electrode layer.

摘要翻译： 公开了一种光电转换装置。 光电转换装置包括电极层和半导体层。 半导体层位于电极层上并含有I-III-VI族化合物。 在半导体层中，IB族元素与III-B族元素的原子比从电极层侧的半导体层的一个主面侧向厚度方向的中央部分减少，从中央部向 在与电极层相对的一侧的另一主表面侧。

公开(公告)号：US20120325302A1

公开(公告)日：2012-12-27

申请号：US13603001

申请日：2012-09-04

申请人： Seung-Yeop Myong

发明人： Seung-Yeop Myong

IPC分类号： H01L31/065 ,  H01L31/18

CPC分类号： H01L31/075 ,  H01L31/03765 ,  H01L31/03767 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

摘要： Disclosed is a photovoltaic device. The photovoltaic device according to the present invention includes: a first electrode; a second electrode; and a p-type window layer, a buffer layer, a light absorbing layer and an n-type layer, which are sequentially stacked between the first electrode and the second electrode, wherein, when the p-type window layer is composed of hydrogenated amorphous silicon oxide, the buffer layer is composed of either hydrogenated amorphous silicon carbide or hydrogenated amorphous silicon oxide, and wherein, when the p-type window layer is composed of hydrogenated amorphous silicon carbide, the buffer layer is composed of hydrogenated amorphous silicon oxide.

摘要翻译： 公开了一种光伏器件。 根据本发明的光电器件包括：第一电极; 第二电极; 以及顺序堆叠在第一电极和第二电极之间的p型窗口层，缓冲层，光吸收层和n型层，其中，当p型窗口层由氢化非晶体 氧化硅，缓冲层由氢化非晶碳化硅或氢化非晶硅氧化物构成，其中，当p型窗口层由氢化非晶碳化硅构成时，缓冲层由氢化非晶硅氧化物构成。

公开(公告)号：US20050169593A1

公开(公告)日：2005-08-04

申请号：US11012728

申请日：2004-12-16

申请人： Seong-mo Hwang ,  Young-hun Kim ,  Seung-ho Nam ,  Young-chan Kim

发明人： Seong-mo Hwang ,  Young-hun Kim ,  Seung-ho Nam ,  Young-chan Kim

IPC分类号： G02B6/122 ,  G02B6/12 ,  G02B6/136 ,  G02B6/42 ,  H01L31/0232 ,  H01L31/028 ,  H01L31/0352 ,  H01L31/065 ,  H01L31/105 ,  H01S5/026 ,  G02B6/10

CPC分类号： H01L31/065 ,  G02B6/12004 ,  G02B6/136 ,  G02B6/42 ,  H01L31/028 ,  H01L31/105 ,  Y02E10/547

摘要： An optical device integrally including an optical waveguide and an optical detector, and a method of manufacturing the same. The optical device includes: a substrate; a first single crystalline growth layer grown on the substrate; an optical waveguide provided with a clad layer and a core layer formed on the first single crystalline growth layer; a second single crystalline growth layer grown on a predetermined portion of a core layer at which the clad layer is removed, for absorbing light having a wavelength within a predetermined band and traveling in the optical waveguide.

摘要翻译： 一种包括光波导和光学检测器的光学器件及其制造方法。 光学装置包括：基板; 在衬底上生长的第一单晶生长层; 光波导，其设置有形成在所述第一单晶生长层上的覆盖层和芯层; 生长在芯层的预定部分上的第二单晶生长层，其中去除了包层，用于吸收波长在预定带内并在光波导中行进的光。

公开(公告)号：US5429685A

公开(公告)日：1995-07-04

申请号：US150813

申请日：1993-11-12

申请人： Keishi Saito ,  Tatsuyuki Aoike ,  Masafumi Sano ,  Mitsuyuki Niwa ,  Ryo Hayashi ,  Masahiko Tonogaki

发明人： Keishi Saito ,  Tatsuyuki Aoike ,  Masafumi Sano ,  Mitsuyuki Niwa ,  Ryo Hayashi ,  Masahiko Tonogaki

IPC分类号： H01L31/0392 ,  H01L31/052 ,  H01L31/065 ,  H01L31/075 ,  H01L31/18 ,  H01L31/20 ,  H01L31/0376 ,  H01L31/0384

CPC分类号： H01L31/065 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/075 ,  H01L31/1884 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/52 ,  Y02E10/548 ,  Y02P70/521 ,  Y10S136/293

摘要： The present invention provides a photovoltaic element in which the open-circuit voltage and the path length of holes are improved by preventing the recombination of photoexcited carriers.The p-i-n junction type photovoltaic element is composed of a p-type layer, an i-type layer of a laminated structure consisting of an i-type layer formed by RF plasma CVD on the p-type layer side and an i-type layer formed by microwave (.mu.W) CVD on the n-type layer side, or an i-type layer formed by microwave (.mu.W) plasma CVD on the p-type layer side and an i-type layer formed by RF plasma CVD on the n-type layer side, characterized in that the i-type layer formed by .mu.W plasma CVD is formed by a process in which a lower .mu.W energy and a higher RF energy than the .mu.W energy needed to decompose 100% of the source gas are simultaneously applied to a source gas containing Si and Ge at a pressure of 50 mTorr or less, such that the minimum value of the bandgap is shifted toward the p-type layer side, away from the center of the i-type layer, and the i-type layer formed by RF plasma CVD is formed 30 nm thick or less by using a source gas containing a silicon-containing gas at a deposition rate of 2 nm/sec or less.

摘要翻译： 本发明提供一种光电元件，其中通过防止光激发载流子的复合，提高了开路电压和空穴的路径长度。 pin结型光电元件由p型层，由p型层侧的RF等离子体CVD形成的i型层构成的层叠结构的i型层和形成为i型层的i型层构成 通过在n型层侧的微波（μW）CVD或在p型层侧由微波（μW）等离子体CVD形成的i型层和通过RF等离子体CVD形成的i型层 n型层侧，其特征在于，通过以下步骤形成由μW等离子体CVD形成的i型层，其中相比于分解100％的源所需的μW能量较低的μW能量和较高的RF能量 在50mTorr以下的压力下将气体同时施加到含有Si和Ge的源气体，使得带隙的最小值朝着p型层侧偏离i型层的中心， 通过使用含有含硅气体的源气体，通过RF等离子体CVD形成的i型层形成为30nm以下 速度为2nm / sec以下。

公开(公告)号：US4816082A

公开(公告)日：1989-03-28

申请号：US87264

申请日：1987-08-19

申请人： Subhendu Guha ,  Chi-Chung Yang ,  Stanford R. Ovshinsky

发明人： Subhendu Guha ,  Chi-Chung Yang ,  Stanford R. Ovshinsky

IPC分类号： H01L31/04 ,  H01L31/065 ,  H01L31/075 ,  H01L31/20 ,  H01L31/06

CPC分类号： H01L31/076 ,  H01L31/065 ,  H01L31/075 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

摘要： One or more thin film solar cells in which the intrinsic layer of substantially amorphous semiconductor alloy material thereof includes at least a first band gap portion and a narrower band gap portion. The band gap of the intrinsic layer is spatially graded through a portion of the bulk thickness, said graded portion including a region removed from the intrinsic layer-dopant layer interfaces. The band gap of the intrinsic layer is always less than the band gap of the doped layers. The gradation of the intrinsic layer is effected such that the open circuit voltage and/or the fill factor of the one or plural solar cell structure is enhanced.