公开(公告)号：US20100203475A1

公开(公告)日：2010-08-12

申请号：US12659044

申请日：2010-02-24

Applicant: Yong San Yoon ,  Jae Yeol Jung

Inventor： Yong San Yoon ,  Jae Yeol Jung

IPC: A61C8/00

CPC classification number: A61C8/0012 ,  A61C8/0057 ,  A61C8/0069

Abstract: A tooth implant device comprises an abutment and a fixture. The abutment includes an upper portion to which a dental crown is attached and a lower portion whose cross-section decreases to a downward direction. The fixture includes an abutment inserting hole into which the abutment is inserted and is made of a bone-friendly metallic material. The fixture has an outer surface without threaded portions and has stiffness in a range of 5 percents to 40 percents compared to that of a solid form. When the abutment is inserted into the abutment inserting hole, the flexible fixture expands to apply a uniform stress to alveolar bone and be secured thereto in a taper-lock fashion.

Abstract translation: 牙齿植入装置包括支座和夹具。 基台包括安装有牙冠的上部和横截面向下方向下降的下部。 固定装置包括邻接插入孔，邻接插入孔中并由骨友善的金属材料制成。 固定装置具有没有螺纹部分的外表面，并且与固体形式相比，刚度在5％至40％的范围内。 当基台插入到邻接插入孔中时，柔性夹具膨胀以对牙槽骨施加均匀的应力，并以锥形锁定的方式固定到牙槽骨上。

公开(公告)号：US20100178478A1

公开(公告)日：2010-07-15

申请号：US12617357

申请日：2009-11-12

Applicant: Byeong-Soo BAE ,  Jungho JIN ,  Seung Cheol YANG ,  Ji Hoon KO

Inventor： Byeong-Soo BAE ,  Jungho JIN ,  Seung Cheol YANG ,  Ji Hoon KO

IPC: B32B7/02 ,  C08L83/06

CPC classification number: C08K3/40 ,  H01L29/78603 ,  Y10T428/23986 ,  Y10T428/24942 ,  Y10T428/2933 ,  Y10T428/2971 ,  Y10T428/31612 ,  Y10T428/31663 ,  Y10T442/2992 ,  C08L83/04

Abstract: Provided is a non-hydrolytic transparent composite composition having excellent transparency and heat resistance, and a low thermal expansion coefficient. Particularly, the transparent composite composition includes a glass filler dispersed in a crosslinked transparent resin produced by a non-hydrolytic reaction. The non-hydrolytic transparent siloxane resin is a resin having Si—O (siloxane) bonds, a resin having at least one kind of heterometal bonds, including Si—O bonds, or the resin further containing other ingredients. When the transparent siloxane resin produced by a non-hydrolytic reaction forms a composite in combination with the glass filler, the composite realizes high transparency and heat resistance, as well as a low thermal expansion coefficient. Therefore, the transparent composite composition is useful as a substrate for thin film transistor (TFT) devices, display devices and optical devices.

Abstract translation: 本发明提供透明性，耐热性优异，热膨胀系数低的非水解透明性复合组合物。 特别地，透明复合组合物包括分散在通过非水解反应制备的交联透明树脂中的玻璃填料。 非水解性透明硅氧烷树脂是具有Si-O（硅氧烷）键的树脂，具有至少一种包含Si-O键的异金属键的树脂，或还含有其它成分的树脂。 当通过非水解反应生成的透明硅氧烷树脂与玻璃填料组合形成复合物时，该复合物实现了高透明度和耐热性以及低的热膨胀系数。 因此，透明复合组合物可用作薄膜晶体管（TFT）器件，显示器件和光学器件的衬底。

公开(公告)号：US07754549B2

公开(公告)日：2010-07-13

申请号：US11839683

申请日：2007-08-16

Applicant: Jae-Beom Choi ,  Young-jin Chang ,  Yoon-Seok Choi ,  Seung-Hwan Shim ,  Han-Na Jo ,  Jung-Hoon Shin ,  Joon-Young Koh

Inventor： Jae-Beom Choi ,  Young-jin Chang ,  Yoon-Seok Choi ,  Seung-Hwan Shim ,  Han-Na Jo ,  Jung-Hoon Shin ,  Joon-Young Koh

IPC: H01L29/786

CPC classification number: H01L21/02672 ,  H01L21/02532 ,  H01L27/1277 ,  H01L27/1281

Abstract: A method of manufacturing a thin film transistor array panel includes forming an amorphous silicon film on an insulating substrate; forming a sacrificial film having an embossed surface on the amorphous silicon film; contacting a metal plate with the sacrificial film and performing heat-treatment for crystallizing the amorphous silicon film to change the amorphous silicon film to a polycrystalline silicon film; removing the metal plate and the sacrificial film; patterning the polycrystalline silicon film to form a semiconductor; forming a gate insulating layer which covers the semiconductor; forming a gate line on the gate insulating layer, a portion of the gate line overlapping the semiconductor; heavily doping a conductive impurity into portions of the semiconductor to form a source region and a drain region; forming an interlayer insulating layer which covers the gate line and the semiconductor; and forming a data line and an output electrode connected to the source and drain regions, respectively, on the interlayer insulating layer.

Abstract translation: 制造薄膜晶体管阵列面板的方法包括在绝缘基板上形成非晶硅膜; 在所述非晶硅膜上形成具有压花表面的牺牲膜; 使金属板与牺牲膜接触，并进行热处理以使非晶硅膜结晶，将非晶硅膜改变为多晶硅膜; 去除金属板和牺牲膜; 图案化多晶硅膜以形成半导体; 形成覆盖半导体的栅极绝缘层; 在所述栅极绝缘层上形成栅极线，所述栅极线的一部分与所述半导体重叠; 将导电杂质重掺杂到半导体的部分中以形成源极区和漏极区; 形成覆盖所述栅极线和所述半导体的层间绝缘层; 以及分别在层间绝缘层上形成连接到源区和漏区的数据线和输出电极。

公开(公告)号：US20100151275A1

公开(公告)日：2010-06-17

申请号：US12568406

申请日：2009-09-28

Applicant: Sung Chul SHIN ,  Hee-Tae JUNG ,  Hyun-Seok KO ,  Jin-Mi JUNG

Inventor： Sung Chul SHIN ,  Hee-Tae JUNG ,  Hyun-Seok KO ,  Jin-Mi JUNG

IPC: G11B5/65 ,  B32B37/00 ,  B32B38/10 ,  C21D1/00 ,  B32B3/00

CPC classification number: G11B5/855 ,  B82Y25/00 ,  H01F1/009 ,  H01F1/065 ,  H01F1/068 ,  H01F41/18 ,  Y10T428/24612

Abstract: This invention relates to a L10-ordered FePt nanodot array which is manufactured using capillary force lithography, to a method of manufacturing the L10-ordered FePt nanodot array and to a high density magnetic recording medium using the L10-ordered FePt nanodot array. This method includes depositing a FePt thin film on a MgO substrate, forming a thin film made of a polymer material on the deposited FePt thin film using spin coating, bringing a mold into contact with the spin coated FePt thin film, annealing the mold and a polymer pattern which are in contact with each other, cooling and separating the mold and the polymer pattern which are annealed, controlling a size of the polymer pattern through reactive ion etching, ion milling a portion of the FePt thin film uncovered with the polymer pattern thus forming a FePt nanodot array and then removing a remaining polymer layer, and annealing the FePt nanodot array.

Abstract translation: 本发明涉及使用毛细管力光刻制造的L10有序FePt纳米点阵列，涉及使用L10有序FePt纳米点阵列制造L10有序FePt纳米点阵列的方法和高密度磁记录介质。 该方法包括在MgO基板上沉积FePt薄膜，使用旋转涂层在沉积的FePt薄膜上形成由聚合物材料制成的薄膜，使模具与旋涂FePt薄膜接触，退火模具和 聚合物图案彼此接触，冷却和分离退火的模具和聚合物图案，通过反应离子蚀刻控制聚合物图案的尺寸，离子研磨由聚合物图案未覆盖的一部分FePt薄膜，因此 形成FePt纳米点阵列，然后除去剩余的聚合物层，并退火FePt纳米点阵列。

公开(公告)号：US20100143735A1

公开(公告)日：2010-06-10

申请号：US12556546

申请日：2009-09-09

Applicant: Dong-Ho Shin ,  Insung S. Choi ,  Sung Min Kang ,  Seung Pyo Jeong ,  Jinkyu Kim ,  Bokyung Kong

Inventor： Dong-Ho Shin ,  Insung S. Choi ,  Sung Min Kang ,  Seung Pyo Jeong ,  Jinkyu Kim ,  Bokyung Kong

IPC: B32B27/08 ,  C07C245/24 ,  C08F2/46

CPC classification number: C08F2/50 ,  C08F220/10 ,  Y10T428/31913

Abstract: Provided is a method for modifying a surface of a cyclic olefin copolymer, comprising: coating a compound of the following Chemical Formula 1 on the surface of a cyclic olefin copolymer substrate, irradiating UV light on the cyclic olefin copolymer substrate, and polymerizing a monomer on the cyclic olefin where X is H or F, and n is an integer of 1 to 6.

Abstract translation: 提供了一种改性环烯烃共聚物表面的方法，包括：在环状烯烃共聚物基材的表面上涂布下列化学式1的化合物，在环状烯烃共聚物基材上照射UV光，并使单体聚合 环状烯烃，其中X为H或F，n为1至6的整数。

公开(公告)号：US20100133983A1

公开(公告)日：2010-06-03

申请号：US12376824

申请日：2007-07-25

Applicant: Hee-Tae Jung ,  Sang Cheon Youn ,  Young Koan Ko

Inventor： Hee-Tae Jung ,  Sang Cheon Youn ,  Young Koan Ko

IPC: H01J1/02 ,  H01J9/02

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J2201/3043 ,  H01J2201/30434 ,  H01J2201/30469

Abstract: The present invention relates to a method for manufacturing a field emitter electrode, in which nanowires are aligned horizontally, perpendicularly or at any angle between horizontal and perpendicular according to the direction of a generated electromagnetic field. More particularly, the present invention relates to a method for manufacturing a field emitter electrode having nanowires aligned horizontally, perpendicularly or at any angle between horizontal and perpendicular according to the direction of a generated electromagnetic field, the method comprising the steps of diluting nanowires in a solvent, dispersing the resulting solution on a substrate fixed to the upper part of an electromagnetic field generator, and fixing the nanowires aligned in the direction of an electromagnetic field generated from the electromagnetic field generator. According to the present invention, a high capacity field emitter electrode having high density nanowires aligned according to the direction of a generated electromagnetic field can be fabricated by a simple process and nanowires can be used as positive electrode materials for field emission displays (FEDs), sensors, electrodes, backlights and the like.

Abstract translation: 本发明涉及一种用于制造场致发射电极的方法，其中纳米线根据所产生的电磁场的方向垂直或垂直或以水平和垂直之间的任意角度水平排列。 更具体地说，本发明涉及一种用于制造具有根据产生的电磁场的方向水平，垂直或以水平和垂直之间任何角度排列的纳米线的场致发射电极的方法，所述方法包括以下步骤：在 溶剂，将得到的溶液分散在固定于电磁场发生器上部的基板上，并固定沿电磁场发生器产生的电磁场方向排列的纳米线。 根据本发明，可以通过简单的工艺制造具有根据产生的电磁场方向排列的高密度纳米线的高容量场致发射极，并且可以使用纳米线作为场发射显示器（FED）的正极材料， 传感器，电极，背光灯等。

公开(公告)号：US20100124368A1

公开(公告)日：2010-05-20

申请号：US12585964

申请日：2009-09-29

Applicant: Jong Chul Ye ,  Young Hun Sung ,  Dong Goo Kang ,  Jae Duck Jang ,  Ji Young Choi ,  Min Woo Kim

Inventor： Jong Chul Ye ,  Young Hun Sung ,  Dong Goo Kang ,  Jae Duck Jang ,  Ji Young Choi ,  Min Woo Kim

IPC: G06K9/00 ,  G06K9/36

CPC classification number: G06T11/006 ,  G06T2211/424 ,  G06T2211/436

Abstract: An apparatus and method of reconstructing a three-dimensional (3D) image from two-dimensional (2D) images are disclosed. Three dimensional (3D) data may be reconstructed in an x-ray generation tube at a limited angle, and repeatedly updated for each pixel. A median from among each pixel of reconstruction data may be selected. Backprojecting may be performed using a search direction weight calculated using a reprojection image and residual image. A 3D image satisfying a Level 1 (L1) norm fidelity and sparsity constraint of the reconstruction data may be reconstructed.

Abstract translation: 公开了一种从二维（2D）图像重建三维（3D）图像的装置和方法。 三维（3D）数据可以以有限的角度在x射线发生管中重建，并且对于每个像素重复地更新。 可以选择重构数据的每个像素中的中值。 可以使用使用重投影图像和残差图像计算的搜索方向权重来执行反向投影。 可以重构满足重建数据的级别1（L1）范数保真度和稀疏约束的3D图像。

公开(公告)号：US20100117522A1

公开(公告)日：2010-05-13

申请号：US12476664

申请日：2009-06-02

Applicant: Jong-jin PARK ,  Kwang-hee LEE ,  Xavier BULLIARD ,  Yun-hyuk CHOI ,  Tae-gwan PARK

Inventor： Jong-jin PARK ,  Kwang-hee LEE ,  Xavier BULLIARD ,  Yun-hyuk CHOI ,  Tae-gwan PARK

IPC: H01J1/63 ,  C08F136/20 ,  C07H7/04 ,  B32B15/088 ,  B32B27/06

CPC classification number: C07H15/18 ,  H01L51/448 ,  H01L51/5237 ,  H01L51/5256 ,  Y10T428/31681 ,  Y10T428/31765

Abstract: An organic material including a hydrophilic polymer and an organic moiety having a hydroxyl substituted C6-C14 aromatic functional group, the organic moiety binding to an end or a side of the hydrophilic polymer.

Abstract translation: 包括亲水性聚合物和具有羟基取代的C 6 -C 14芳族官能团的有机部分的有机材料，所述有机部分结合到所述亲水性聚合物的末端或侧面。

公开(公告)号：US07714695B2

公开(公告)日：2010-05-11

申请号：US11709291

申请日：2007-02-22

Applicant: Suk-Joong Kang ,  Seong-Min Wang ,  Sung-Yoon Chung

Inventor： Suk-Joong Kang ,  Seong-Min Wang ,  Sung-Yoon Chung

IPC: H01C7/10

CPC classification number: H01C7/115 ,  C04B35/47 ,  C04B35/62655 ,  C04B2235/3217 ,  C04B2235/3244 ,  C04B2235/3251 ,  C04B2235/3272 ,  C04B2235/5436 ,  C04B2235/6022 ,  C04B2235/604 ,  C04B2235/652 ,  C04B2235/656 ,  C04B2235/6567 ,  C04B2235/6582 ,  C04B2235/663 ,  C04B2235/72 ,  C04B2235/786 ,  C04B2235/85 ,  Y10T29/49082 ,  Y10T29/49083

Abstract: The present invention relates to a method for manufacturing a SrTiO3 series varistor using grain boundary segregation, and more particularly, to a method for manufacturing a SrTiO3 series varistor by sintering a powdered composition in which acceptors such as Al and Fe are added in powdered form and then sintered under a reducing atmosphere and heat-treated them in the air to selectively form electrical conduction barriers at grain boundaries in a process for manufacturing SrTiO3 series varistor having an excellent non-linear coefficient and a breakdown voltage suitable for use.

Abstract translation: 本发明涉及一种使用晶界偏析制造SrTiO3系列压敏电阻的方法，更具体地说，涉及通过烧结粉末状组合物制造SrTiO3系列变阻器的方法，其中粉末状组合物以粉末形式加入诸如Al和Fe的受体， 然后在还原气氛下烧结并在空气中热处理它们，以在制造具有优异的非线性系数和适合使用的击穿电压的SrTiO3系列压敏电阻的工艺中在晶界选择性地形成导电屏障。

公开(公告)号：US20100104899A1

公开(公告)日：2010-04-29

申请号：US12429233

申请日：2009-04-24

Applicant: Joongmyeon Bae ,  Sangho Yoon ,  Sunyoung Kim

Inventor： Joongmyeon Bae ,  Sangho Yoon ,  Sunyoung Kim

IPC: H01M8/06

CPC classification number: H01M8/0618 ,  B01J8/0465 ,  B01J2219/1923 ,  B01J2219/1943 ,  C01B3/26 ,  C01B3/38 ,  C01B3/382 ,  C01B3/58 ,  C01B2203/0244 ,  C01B2203/0277 ,  C01B2203/0435 ,  C01B2203/0485 ,  C01B2203/066 ,  C01B2203/1005 ,  C01B2203/1041 ,  C01B2203/1047 ,  C01B2203/1058 ,  C01B2203/1064 ,  C01B2203/107 ,  C01B2203/1082 ,  C01B2203/142 ,  C01B2203/143 ,  C01B2203/146 ,  H01M8/0631 ,  H01M8/0675 ,  H01M2008/1293

Abstract: A unified fuel processing reactor for a solid oxide fuel cell can reform hydrocarbon-based fuel into hydrogen-rich gas, remove a sulfur component, and convert non-converted fuel and a low carbon (C2˜C5) hydrocarbon compound into hydrogen and methane in a single reactor. The reactor comprises a primary-reformer which reforms a hydrocarbon-base fuel and generates hydrogen-rich reformed gas, a desulfurizer which removes a sulfur component from the reformed gas, and a post-reformer which selectively decomposes a low carbon (C2˜C5) hydrocarbon in the desulfurized reformed gas into hydrogen and methane. The primary-reformer, desulfurizer and post-reformer are in the unified reactor and isolated, except for a fluid passage, from each other by internal partition walls. The primary-reformer is disposed at a center portion of the reactor. The post-reformer and the desulfurizer are concentrically disposed outside of the primary-reformer.

Abstract translation: 用于固体氧化物燃料电池的统一燃料处理反应器可以将烃类燃料转化为富氢气体，除去硫成分，并将未转化燃料和低碳（C 2 -C 5）烃化合物转化成氢气和甲烷 一个反应堆。 该反应器包括改性烃基燃料并产生富氢重整气体的一次重整器，从重整气体中除去硫成分的脱硫器和选择性分解低碳（C2〜C5）的后重整器， 将脱硫改质气体中的烃转化为氢气和甲烷。 初级重整器，脱硫器和后改性器在统一的反应器中，除了流体通道之外，通过内部分隔壁彼此隔离。 初级重整器设置在反应器的中心部分。 后改性剂和脱硫剂同心地放置在初级重整器之外。