中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

235 records (took 0.033 seconds)

    METHODS OF PACKAGING ACOUSTIC WAVE RESONATOR DEVICES ON WAFERS AND RELATED WAFERS AND STRUCTURES
    81.
    发明公开
    METHODS OF PACKAGING ACOUSTIC WAVE RESONATOR DEVICES ON WAFERS AND RELATED WAFERS AND STRUCTURES 审中-公开

    公开(公告)号：US20240258991A1

    公开(公告)日：2024-08-01

    申请号：US18160877

    申请日：2023-01-27

    Applicant: Akoustis, Inc.

    Inventor： Kenneth Fallon ,  Carlos R. Padilla ,  Mary Winters ,  Robert Charles Dry ,  Ethan Gram ,  Westbrook Hoose

    IPC: H03H9/10 ,  H03H3/02 ,  H03H9/05 ,  H03H9/17

    CPC classification number: H03H9/105 ,  H03H3/02 ,  H03H9/0523 ,  H03H9/173

    Abstract: A wafer including an array of bulk acoustic wave resonator devices can include a first bulk acoustic wave resonator device on the wafer, the first bulk acoustic wave resonator device including a passivation layer on a piezoelectric layer, a second bulk acoustic wave resonator device on the wafer directly adjacent to the first bulk acoustic wave resonator device, the second bulk acoustic wave resonator device including the passivation layer and the piezoelectric layer, a wall layer on the wafer forming first and second wall cavity structures that extend around the first and second bulk acoustic wave resonator devices, respectively, a capping layer extending over the wall layer to cover the first and second wall cavity structures that include the first and second bulk acoustic wave resonator devices, respectively, a metallization layer coupling together bulk acoustic wave resonators included in the first or second bulk acoustic wave resonator device and a pillar that protrudes vertically from the metallization layer to contact the cap layer.

    BAW RESONATORS WITH ANTISYMMETRIC THICK ELECTRODES
    86.
    发明公开
    BAW RESONATORS WITH ANTISYMMETRIC THICK ELECTRODES 审中-公开

    公开(公告)号：US20230336151A1

    公开(公告)日：2023-10-19

    申请号：US18339939

    申请日：2023-06-22

    Applicant: Akoustis, Inc.

    Inventor： Dae Ho Kim ,  Mary Winters ,  Zhiqiang Bi

    IPC: H03H9/13 ,  H03H9/02 ,  H03H9/54 ,  H03H9/17

    CPC classification number: H03H9/132 ,  H03H9/02157 ,  H03H9/131 ,  H03H9/547 ,  H03H9/171 ,  H03H9/02015

    Abstract: A resonator circuit device. This device can include a piezoelectric layer having a front-side electrode and a back-side electrode spatially configured on opposite sides of the piezoelectric layer. Each electrode has a connection region and a resonator region. Each electrode also includes a partial mass-loaded structure configured within a vicinity of its connection region. The front-side electrode and the back-side electrode are spatially configured in an anti-symmetrical manner with the resonator regions of both electrodes at least partially overlapping and the first and second connection regions on opposing sides. This configuration provides a symmetric acoustic impedance profile for improved Q factor and can reduce the issues of misalignment or unbalanced boundary conditions associated with conventional single mass-loaded perimeter configurations.

    4.5G 3.55-3.7 GHz band bulk acoustic wave resonator RF filter circuit
    90.
    发明授权
    4.5G 3.55-3.7 GHz band bulk acoustic wave resonator RF filter circuit 有权

    公开(公告)号：US11683021B2

    公开(公告)日：2023-06-20

    申请号：US16707885

    申请日：2019-12-09

    Applicant: Akoustis, Inc.

    Inventor： Jeffrey B. Shealy ,  Rohan W. Houlden ,  David M. Aichele

    IPC: H03H9/56 ,  H03H3/04 ,  H10N30/00

    CPC classification number: H03H9/562 ,  H03H3/04 ,  H03H9/568 ,  H10N30/10516 ,  H03H2003/0428 ,  H03H2003/0435

    Abstract: An RF circuit device using modified lattice, lattice, and ladder circuit topologies. The devices can include four resonator devices and four shunt resonator devices. In the ladder topology, the resonator devices are connected in series from an input port to an output port while shunt resonator devices are coupled the nodes between the resonator devices. In the lattice topology, a top and a bottom serial configurations each includes a pair of resonator devices that are coupled to differential input and output ports. A pair of shunt resonators is cross-coupled between each pair of a top serial configuration resonator and a bottom serial configuration resonator. The modified lattice topology adds baluns or inductor devices between top and bottom nodes of the top and bottom serial configurations of the lattice configuration. These topologies may be applied using single crystal or polycrystalline bulk acoustic wave (BAW) resonators.

Patent Agency Ranking