公开(公告)号：US07935474B2

公开(公告)日：2011-05-03

申请号：US12174759

申请日：2008-07-17

Applicant: Jung-Youl Lee ,  Min-Ja Yoo ,  Jeong-Sik Kim ,  Young-Bae Lim ,  Jae-Woo Lee ,  Jae-Hyun Kim

Inventor： Jung-Youl Lee ,  Min-Ja Yoo ,  Jeong-Sik Kim ,  Young-Bae Lim ,  Jae-Woo Lee ,  Jae-Hyun Kim

IPC: G03F7/004 ,  G03F7/30

CPC classification number: C07D317/72 ,  C07D339/06 ,  G03F7/0045 ,  G03F7/0397 ,  Y10S430/123

Abstract: An acid-amplifier having an acetal group and a photoresist composition including the same, are disclosed. The acid-amplifier produces an acid (second acid) during a post-exposure-bake (PEB), which is induced by an acid (first acid) generated from a photo-acid generator (PAG) at the exposure process so that a line edge roughness (LER) of the photoresist pattern and photoresist energy sensitivity are improved. The acid-amplifier has a structure of following Formula 1. in Formula 1, R is C4˜C20 mono-cyclic or multi-cyclic saturated hydrocarbon, R1 is C1˜C10 linear hydrocarbon, C1˜C10 perfluoro compound or C5˜C20 aromatic compound, Ra and Rb are independently hydrogen atom or C1˜C4 saturated hydrocarbon and A is independently oxygen atom (O) or sulfur atom (S).

Abstract translation: 公开了具有缩醛基的酸性放大器和包含该缩醛基的光致抗蚀剂组合物。 在曝光过程中，酸放大器在曝光前烘烤（PEB）中产生酸（第二酸），其由在光生酸发生器（PAG）产生的酸（第一酸）诱导，使得线 改善了光致抗蚀剂图案的边缘粗糙度（LER）和光致抗蚀剂的能量灵敏度。 酸式放大器在式1中具有下式1的结构，R为C 4〜C 20单环或多环饱和烃，R 1为C 1〜C 10直链烃，C 1〜C 10全氟化合物或C 5〜C 20芳族化合物 ，Ra和Rb独立地为氢原子或C1〜C4饱和烃，A独立地为氧原子（O）或硫原子（S）。

公开(公告)号：US20110037993A1

公开(公告)日：2011-02-17

申请号：US12649812

申请日：2009-12-30

Applicant: Jae-woo LEE ,  Seung-bong HAN ,  Sun-woo KIM

Inventor： Jae-woo LEE ,  Seung-bong HAN ,  Sun-woo KIM

IPC: G06K15/00

CPC classification number: H04N5/63 ,  G06F9/4418 ,  H04N21/4436

Abstract: An image reproduction apparatus including a power control unit detecting whether an error has occurred in supplying power to the image reproduction apparatus; and a booting control unit selectively cold-booting the image reproduction apparatus based on the detection of whether the error with supplying the power has occurred.

Abstract translation: 一种图像再现装置，包括：功率控制单元，检测在向图像再现装置供电时是否发生错误; 以及引导控制单元，基于是否发生了提供电源的错误的检测来选择性地冷启动图像再现设备。

公开(公告)号：US07846786B2

公开(公告)日：2010-12-07

申请号：US11927881

申请日：2007-10-30

Applicant: Hong Yeol Lee ,  Seung Eon Moon ,  Eun Kyoung Kim ,  Jong Hyurk Park ,  Kang Ho Park ,  Jong Dae Kim ,  Gyu Tae Kim ,  Jae Woo Lee ,  Hye Yeon Ryu ,  Jung Hwan Huh

Inventor： Hong Yeol Lee ,  Seung Eon Moon ,  Eun Kyoung Kim ,  Jong Hyurk Park ,  Kang Ho Park ,  Jong Dae Kim ,  Gyu Tae Kim ,  Jae Woo Lee ,  Hye Yeon Ryu ,  Jung Hwan Huh

IPC: H01L21/00 ,  H01L21/16 ,  H01L29/06 ,  H01L27/088

CPC classification number: H01L29/0673 ,  H01L21/76289 ,  H01L27/1225 ,  H01L29/0665 ,  H01L29/24 ,  H01L29/66969 ,  H01L29/7869 ,  Y10S977/762

Abstract: Provided is a method of fabricating a nano-wire array, including the steps of: depositing a nano-wire solution, which contains nano-wires, on a substrate; forming a first etch region in a stripe shape on the substrate and then patterning the nano-wires; forming drain and source electrode lines parallel to each other with the patterned nano-wires interposed therebetween; forming a plurality of drain electrodes which have one end connected to the drain electrode line and contact at least one of the nano-wires, and forming a plurality of source electrodes, which have one end connected to the source electrode line and contact the nano-wires that contact the drain electrodes; forming a second etch region between pairs of the drain and source electrodes so as to prevent electrical contacts between the pairs of the drain and source electrodes; forming an insulating layer on the substrate; and forming a gate electrode between the drain and source electrodes contacting the nano-wires on the insulating layer. Accordingly, even in an unparallel structure of nano-wires to electrode lines, a large scale nano-wire array is practicable and applicable to an integrated circuit or display unit with nano-wire alignment difficulty, as well as to device applications using flexible substrates.

Abstract translation: 提供一种制造纳米线阵列的方法，包括以下步骤：在衬底上沉积包含纳米线的纳米线溶液; 在衬底上形成带状的第一蚀刻区域，然后对纳米线进行构图; 形成彼此平行的漏极和源极电极线，其间插入图案化的纳米线; 形成多个漏电极，所述多个漏电极的一端连接到所述漏电极线并接触所述纳米线中的至少一个，并且形成多个源电极，所述多个源电极的一端连接到所述源电极线并接触所述纳米线， 接触漏电极的电线; 在所述漏极和源极电极之间形成第二蚀刻区域，以防止所述漏极和源极电极之间的电接触; 在所述基板上形成绝缘层; 以及在与绝缘层上的纳米线接触的漏极和源电极之间形成栅电极。 因此，即使在纳米线与电极线的不平行结构中，大规模的纳米线阵列也是可行的并且适用于具有纳米线对准困难的集成电路或显示单元以及使用柔性基板的器件应用。

公开(公告)号：US20100274003A1

公开(公告)日：2010-10-28

申请号：US12733674

申请日：2008-09-17

Applicant: Chang-Seob Kim ,  Dong-Woo Lee ,  Jae-Woo Lee ,  Mi-Ran Jung ,  Young-Cheol Jeong ,  Si-Min Kim ,  Young-Ro Choi ,  Dong-Geun Seo ,  Ju-Hee Lee ,  Phil-Sang Ahn

Inventor： Chang-Seob Kim ,  Dong-Woo Lee ,  Jae-Woo Lee ,  Mi-Ran Jung ,  Young-Cheol Jeong ,  Si-Min Kim ,  Young-Ro Choi ,  Dong-Geun Seo ,  Ju-Hee Lee ,  Phil-Sang Ahn

IPC: C07D487/04

CPC classification number: C07D477/20 ,  C07C213/04 ,  C07D205/04 ,  C07C215/08

Abstract: The present invention provides a process for preparing an acid addition salt of a synthetic intermediate for carbapenem antibiotics and a novel acid addition salt of a synthetic intermediate for carbapenem antibiotics obtained from the process. The present invention also provides a process for preparing a carbapenem antibiotic using the acid addition salt. According to the process of the present invention, an acid addition salt of a synthetic intermediate for carbapenem antibiotics can be prepared in a high yield and high purity, without conducting column chromatography. Thus, the process of the present invention can be applied to mass production with an industrial scale. Furthermore, since the acid addition salts have solid forms, they are easy to handle and keep in a manufacturing site.

Abstract translation: 本发明提供了一种制备碳青霉烯类抗生素合成中间体的酸加成盐的方法和由该方法得到的碳青霉烯类抗生素合成中间体的新型酸加成盐。 本发明还提供了使用酸加成盐制备碳青霉烯类抗生素的方法。 根据本发明的方法，可以以高产率和高纯度制备碳青霉烯类抗生素合成中间体的酸加成盐，而不进行柱层析。 因此，本发明的方法可以应用于工业规模的批量生产。 此外，由于酸加成盐具有固体形式，因此易于处理并保持在制造现场。

公开(公告)号：US20100002213A1

公开(公告)日：2010-01-07

申请号：US12033264

申请日：2008-02-19

Applicant: Gyu-Tae Kim ,  Eung-Seok Park ,  Do-Young Jang ,  Jae-Woo Lee

Inventor： Gyu-Tae Kim ,  Eung-Seok Park ,  Do-Young Jang ,  Jae-Woo Lee

IPC: G03B27/52

CPC classification number: G03F7/70383

Abstract: A photolithography system using an optical microscope is provided that can form various types of selective patterns at a low cost in small-scale research using unit-size silicon substrates which is not targeted for mass production, without requiring an expensive photomask.

Abstract translation: 提供了一种使用光学显微镜的光刻系统，其可以在不需要昂贵的光掩模的情况下以小规模研究形成各种类型的选择性图案，其使用不是大规模生产的单位尺寸硅衬底。

公开(公告)号：US07569325B2

公开(公告)日：2009-08-04

申请号：US11923392

申请日：2007-10-24

Applicant: Jung-Youl Lee ,  Geun-Jong Yu ,  Sang-Jung Kim ,  Jae-Woo Lee ,  Deog-Bae Kim ,  Jae-Hyun Kim

Inventor： Jung-Youl Lee ,  Geun-Jong Yu ,  Sang-Jung Kim ,  Jae-Woo Lee ,  Deog-Bae Kim ,  Jae-Hyun Kim

IPC: G03F7/004 ,  G03F7/30 ,  C08F226/00 ,  C07D487/00 ,  C07C303/28

CPC classification number: G03F7/0392 ,  C07C309/00 ,  C07C2601/14 ,  C07C2602/42 ,  C07C2603/24 ,  C07C2603/74 ,  C07D209/48 ,  C07D221/06 ,  C08F12/22 ,  C08F12/26 ,  C08F12/30 ,  C08F12/32 ,  C08F212/14 ,  C09D125/18 ,  G03F7/0045 ,  Y10S430/106 ,  Y10S430/111 ,  C08F212/08

Abstract: A photoresist monomer having a sulfonyl group, a polymer thereof and a photoresist composition containing the same are disclosed. The photoresist monomer is represented by following Formula. wherein, R* is a hydrogen atom or a methyl group, R1 and R2 are independently a C1˜C20 alkyl group, a C4˜C20 cycloalkyl group, a C6˜C20 aryl group or a C7˜C20 arylalkyl group, one of R1 and R2 may not exist, and R1 and R2 can be connected to form a ring.

Abstract translation: 公开了具有磺酰基的光致抗蚀剂单体，其聚合物和含有它们的光致抗蚀剂组合物。 光致抗蚀剂单体由下式表示。 其中，R *为氢原子或甲基，R 1和R 2独立地为C 1〜C 20烷基，C 4〜C 20环烷基，C 6〜C 20芳基或C 7〜20芳烷基，R 1和 R2可能不存在，R1和R2可以连接形成环。

公开(公告)号：US07546677B2

公开(公告)日：2009-06-16

申请号：US11898002

申请日：2007-09-07

Applicant: Jae Woo Lee ,  Chang Han Je ,  Sung Weon Kang

Inventor： Jae Woo Lee ,  Chang Han Je ,  Sung Weon Kang

IPC: H01H11/00 ,  H01H65/00

CPC classification number: H01H59/0009 ,  H01G5/16 ,  H01G5/18 ,  H01H2059/0072 ,  H01P1/127 ,  Y10T29/417 ,  Y10T29/49105 ,  Y10T29/49117 ,  Y10T29/49155 ,  Y10T29/49204 ,  Y10T29/49208

Abstract: A method includes forming a signal line on the substrate so as to have a predetermined opening portion; at least one supporting frame each formed on the substrate at both sides of the signal line; a ground line formed on the substrate between the supporting frame and the signal line; a moving plate fixed to the supporting frame at both sides thereof, the moving plate being movable upward and downward; a switching unit positioned on the moving plate, the switching unit comprising contact means for connecting the opened signal line; and a supporting layer for supporting the moving plate and the switching unit, wherein the supporting layer comprises a support protrusion portion for maintaining a distance from the substrate.

Abstract translation: 一种方法包括在基板上形成信号线以具有预定的开口部分; 至少一个支撑框架，每个形成在信号线两侧的基板上; 形成在支撑框架和信号线之间的基板上的接地线; 移动板在其两侧固定到支撑框架，移动板可向上和向下移动; 位于移动板上的切换单元，切换单元包括用于连接打开的信号线的接触装置; 以及用于支撑所述移动板和所述切换单元的支撑层，其中所述支撑层包括用于保持与所述基板的距离的支撑突出部分。

公开(公告)号：US20090146527A1

公开(公告)日：2009-06-11

申请号：US12240138

申请日：2008-09-29

Applicant: Sang Kyun Lee ,  Sung Q Lee ,  Hye Jin Kim ,  Jae Woo Lee ,  Kang Ho Park ,  Jong Dae Kim

Inventor： Sang Kyun Lee ,  Sung Q Lee ,  Hye Jin Kim ,  Jae Woo Lee ,  Kang Ho Park ,  Jong Dae Kim

IPC: H01L41/09 ,  H01L41/22

CPC classification number: H01L41/0973 ,  H01L41/313 ,  H04R19/005 ,  H04R19/02 ,  H04R31/006 ,  Y10T29/42

Abstract: A piezoelectric microspeaker using microelectromechanical systems (MEMS) and a method of manufacturing the same are provided. The piezoelectric microspeaker includes a piezoelectric layer disposed on an elastic thin layer, and a resonance change unit patterned on one of a bottom surface of the elastic thin layer and a top surface of the piezoelectric layer.

Abstract translation: 提供了使用微机电系统（MEMS）的压电微型扬声器及其制造方法。 压电式微型扬声器包括设置在弹性薄层上的压电层和在弹性薄层的底表面和压电层的顶表面中的一个上构图的谐振改变单元。

公开(公告)号：US20080305430A1

公开(公告)日：2008-12-11

申请号：US12134840

申请日：2008-06-06

Applicant: Jae-Woo Lee ,  Jung-Youl Lee ,  Jeong-Sik Kim ,  Eu-Jean Jang ,  Jae-Hyun Kim

Inventor： Jae-Woo Lee ,  Jung-Youl Lee ,  Jeong-Sik Kim ,  Eu-Jean Jang ,  Jae-Hyun Kim

IPC: G03F7/004 ,  C07C57/46 ,  G03F7/26 ,  C07C69/94

CPC classification number: C07C69/42 ,  C07C69/76 ,  G03F7/0382

Abstract: Disclosed are a photo-sensitive compound and a photoresist composition containing the same, for forming ultra-fine photoresist patterns. The photo-sensitive compound is resented by following Formula 1, wherein x is an integer of 1 to 5, y is an integer of 2 to 6, R is a C2˜C20 hydrocarbon group. The photoresist composition comprises 1˜85 weight % of a photo-sensitive compound represented by following Formula 1, 1˜55 weight % of a compound which reacts with a hydroxyl group (—OH) of the compound represented by Formula 1 to combine with the photo-sensitive compound represented by Formula 1; 1˜15 weight % of a photo-acid generator; and 12˜97 weight % of an organic solvent.

Abstract translation: 公开了用于形成超细光致抗蚀剂图案的光敏化合物和含有该光敏化合物的光致抗蚀剂组合物。 光敏化合物按下式1，其中x为1〜5的整数，y为2〜6的整数，R为C2〜C20的烃基。 光致抗蚀剂组合物包含1〜85重量％的由下式1表示的感光性化合物，1〜55重量％的与式1表示的化合物的羟基（-OH）反应的化合物，与 由式1表示的光敏化合物; 1〜15重量％的光酸发生剂; 和12〜97重量％的有机溶剂。

公开(公告)号：US07419761B2

公开(公告)日：2008-09-02

申请号：US11227877

申请日：2005-09-15

Applicant: Jae-Woo Lee ,  Jung-Youl Lee ,  Deog-Bae Kim ,  Jae-Hyun Kim ,  Eun-Kyung Son

Inventor： Jae-Woo Lee ,  Jung-Youl Lee ,  Deog-Bae Kim ,  Jae-Hyun Kim ,  Eun-Kyung Son

IPC: G03F7/004 ,  G03F7/30 ,  C08F34/02 ,  C08F36/02 ,  C07C69/74

CPC classification number: C07D493/10 ,  C07D317/72 ,  C08F222/1006 ,  G03F7/0397 ,  Y10S430/111

Abstract: A photoresist polymer having a spiro cyclic ketal group, and a photoresist composition including the same is disclosed. The photoresist polymer and the photoresist composition can improve the resolution and the process margin due to its low activation energy of the deprotection reaction of the spiro cyclic ketal group, and can produce fine photoresist patterns due to its low PEB (Post Exposure Baking) temperature sensitivity.

Abstract translation: 公开了具有螺环缩酮基的光致抗蚀剂聚合物和包括其的光致抗蚀剂组合物。 光致抗蚀剂聚合物和光致抗蚀剂组合物可以由于其螺环缩酮基团的脱保护反应的低活化能而提高分辨率和工艺余量，并且由于其低的PEB（曝光后烘烤）温度敏感性，可以产生精细的光致抗蚀剂图案 。