公开(公告)号：US20030034503A1

公开(公告)日：2003-02-20

申请号：US09930176

申请日：2001-08-16

Applicant: MOTOROLA, INC.

Inventor： Raymond B. Essick IV ,  David P. Gurney ,  Timothy J. Johnson ,  Dale F. Bengtson

IPC: H01L029/04

CPC classification number: G06F9/38 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8258 ,  H01L27/0605

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. These materials and techniques can be advantageously utilized to fabricate a processing device having instruction decoders and instruction dispatchers.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 可以有利地利用这些材料和技术来制造具有指令解码器和指令调度器的处理装置。

公开(公告)号：US20030031913A1

公开(公告)日：2003-02-13

申请号：US09925949

申请日：2001-08-09

Applicant: Motorola, Inc.

Inventor： Jeanne S. Pavio ,  Joseph W. Bostaph ,  Allison M. Fisher

IPC: H01M008/02 ,  H01M008/10 ,  H01M008/22 ,  H01M004/90 ,  H01M004/92

CPC classification number: H01M8/04097 ,  H01M8/04156 ,  H01M8/1009 ,  Y02E60/523 ,  Y10T29/49108

Abstract: A fuel cell device and method of forming the fuel cell device including a base portion, formed of a singular body, and having a major surface. At least one fuel cell membrane electrode assembly is formed on the major surface of the base portion and includes an electrically conductive hydrophilic material for the wicking of reaction water and providing for electrical conduction to a current collector. A fluid supply channel including a mixing chamber is defined in the base portion and communicating with the fuel cell membrane electrode assembly for supplying a fuel-bearing fluid to the membrane electrode assembly. An exhaust channel including a water recovery and recirculation channel is defined in the base portion and communicating with the membrane electrode assembly and the electrically conductive hydrophilic material. The membrane electrode assembly and the cooperating fluid supply channel and cooperating exhaust channel forming a single fuel cell assembly.

Abstract translation: 一种形成燃料电池装置的燃料电池装置及方法，该燃料电池装置包括由单体形成并具有主表面的基部。 至少一个燃料电池膜电极组件形成在基部的主表面上，并且包括导电的亲水材料，用于芯吸反应水并提供对集电器的导电。 包括混合室的流体供给通道限定在基部中，并与用于将含油流体供应到膜电极组件的燃料电池膜电极组件连通。 包括水回收和再循环通道的排气通道限定在基部中并与膜电极组件和导电亲水材料连通。 膜电极组件和配合流体供应通道以及协同排气通道形成单个燃料电池组件。

公开(公告)号：US20030030062A1

公开(公告)日：2003-02-13

申请号：US09924481

申请日：2001-08-09

Applicant: MOTOROLA, INC.

Inventor： Paige M. Holm ,  Barbara Foley Barenburg ,  Fred Richard ,  Joyce Yamamoto

IPC: H01L027/15

CPC classification number: H01S5/026 ,  H01S5/0202 ,  H01S5/021 ,  H01S5/0261 ,  H01S2301/173

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. The foregoing is utilized for fabricating a laser cavity of a laser.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 上述用于制造激光器的激光腔。

公开(公告)号：US20030029492A1

公开(公告)日：2003-02-13

申请号：US09928581

申请日：2001-08-13

Applicant: Motorola, Inc.

Inventor： Jun Wang ,  Daniel S. Marshall

IPC: H01L035/00 ,  H01L037/00 ,  H01L035/14

CPC classification number: H01L35/34 ,  H01L35/22

Abstract: A thermoelectric material comprising a Group IV element boride doped with one of the Group III, IV, or V elements, wherein the doping element is different from the Group IV element in the Group IV element boride, and the doping element is not boron. A method of fabricating a thermoelectric material including the steps of: providing a Group IV element boride, and doping the Group IV element boride with a doping element chosen from one of the column III, IV, or V elements, wherein the doping element is different from the Group IV element in the Group IV element boride, and the doping element is not boron. An alternate method of fabricating a thermoelectric material is also disclosed including the steps of simultaneously growing on a substrate a Group IV element boride and at least one doping element chosen from one of the Group III, IV, or V elements wherein the doping element is different than the Group IV element in the Group IV element boride and the doping element is not boron.

Abstract translation: 掺杂有III族，IV族或V族元素之一的IV族元素硼化物的热电材料，其中掺杂元素不同于IV族元素硼化物中的IV族元素，掺杂元素不是硼。 一种制造热电材料的方法，包括以下步骤：提供IV族元素硼化物，并用选自第III，IV或V族元素之一的掺杂元素掺杂IV族元素硼化物，其中掺杂元素是不同的 来自IV族元素硼化物中的IV族元素，并且掺杂元素不是硼。 还公开了制造热电材料的替代方法，其包括以下步骤：在衬底上同时生长第IV族元素硼化物和选自III族，IV族或V族元素之一的至少一种掺杂元素，其中掺杂元素不同 比IV族元素硼化物中的IV族元素和掺杂元素不是硼。

公开(公告)号：US20030026515A1

公开(公告)日：2003-02-06

申请号：US09918802

申请日：2001-08-01

Applicant: MOTOROLA, INC.

Inventor： Barbara Foley Barenburg ,  Joyce Yamamoto

IPC: G02B006/10 ,  G02B006/12 ,  G02B006/13 ,  G02B006/293

CPC classification number: G02B6/12007 ,  G02B6/12004 ,  G02B6/2938 ,  G02B6/29395 ,  G02B6/4215 ,  G02B2006/12047 ,  G02B2006/12078 ,  G02B2006/1208 ,  G02B2006/12164 ,  G02B2006/12178 ,  H01S5/4012 ,  H01S5/4087

Abstract: The present invention provides a wavelength-tunable optical device structure which monolithically integrates both active and passive device components on a single substrate. Monolithically-integrated active and passive optical device components may be fabricated by growing high-quality active optical devices, such as optical emitters and optical detectors, on a single substrate and using electro-optical crystalline oxide materials to tune optical devices, such as directional couplers, to transmit radiation having selected wavelengths. In this manner, cost-effective, monolithically-integrated, tunable wavelength multiplexers and/or demultiplexers may be formed.

Abstract translation: 本发明提供一种波长可调谐光学器件结构，其在单个衬底上将有源器件和无源器件器件单片集成。 可以通过在单个基板上生长高质量的有源光学器件（例如光发射器和光学检测器）并使用电光结晶氧化物材料来调谐光学器件（例如定向耦合器）来制造单片集成的有源和无源光器件部件 以发射具有选定波长的辐射。 以这种方式，可以形成成本有效的，单片集成的可调波长多路复用器和/或解复用器。

公开(公告)号：US20030026295A1

公开(公告)日：2003-02-06

申请号：US09882840

申请日：2001-06-15

Applicant: MOTOROLA, INC.

Inventor： Kevin L. Baum ,  Nikhil S. Nadgauda

IPC: H04L007/00

CPC classification number: H04L27/2662 ,  H04L7/06 ,  H04L27/2659 ,  H04L27/266 ,  H04L27/2675 ,  H04L27/2679 ,  H04L2027/0036

Abstract: An apparatus (30) for and method of synchronizing OFDM signals utilizes a single baud to provide synchronization in time, frequency, and per-subcarrier rotation (201). Timing and fractional subcarrier frequency synchronization may be obtained from either a known or unknown (e.g., data symbol) baud having known symmetry properties. Because all three synchronization tasks may be accomplished utilizing a single sync baud, the present invention spectrally efficient. A differential correlation metric is utilized to efficiently provide integer subcarrier frequency synchronization and per-subcarrier rotation synchronization.

Abstract translation: 用于OFDM信号同步的装置（30）和同步方法利用一个波特率来提供时间，频率和每个子载波的同步（201）。 定时和分数子载波频率同步可以从具有已知对称性质的已知或未知（例如，数据符号）波特获得。 因为可以利用单个同步波特率来实现所有三个同步任务，所以本发明的光谱有效率。 利用差分相关度量来有效地提供整体子载波频率同步和每子载波旋转同步。

公开(公告)号：US20030022456A1

公开(公告)日：2003-01-30

申请号：US09911445

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Edgar H. Callaway JR.

IPC: H01L029/04

CPC classification number: G06F1/105 ,  G02B6/12004 ,  G02B6/122 ,  G02B6/132 ,  G02B6/43 ,  G02B2006/12061 ,  H01L27/15 ,  H01L31/173 ,  H01S5/021 ,  H01S5/026 ,  H01S5/0261 ,  H01S5/183 ,  H01S5/423 ,  H01S2301/173

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying a monocrystalline substrate of a semiconductor structure by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. An optical waveguide is formed in a monocrystalline layer grown on the semiconductor structure for distributing an optical signal to a selected portion of circuitry formed in the semiconductor structure. An optical source is formed in the semiconductor structure and coupled to the optical waveguide for generating the optical signal. A waveguide interferometer is formed in a monocrystalline layer of the semiconductor structure and coupled to the optical waveguide for switching the optical signal between an nullonnull state and an nulloffnull state. An optical detector is formed in the semiconductor structure and coupled to the waveguide interferometer for converting the optical signal to an electrical signal at the selected portion of circuitry of the semiconductor structure.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在半导体结构的单晶衬底上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 光波导形成在半导体结构上生长的单晶层中，用于将光信号分配到在半导体结构中形成的电路的选定部分。 在半导体结构中形成光源并耦合到光波导以产生光信号。 波导干涉仪形成在半导体结构的单晶层中并且耦合到光波导，用于在“接通”状态和“断开”状态之间切换光信号。 光学检测器形成在半导体结构中并耦合到波导干涉仪，用于将光信号转换成在半导体结构的电路的选定部分处的电信号。

公开(公告)号：US20030022414A1

公开(公告)日：2003-01-30

申请号：US09911627

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Keryn Lian ,  Marc Chason ,  Daniel Gamota ,  Barbara Foley Barenburg

IPC: H01L033/00

CPC classification number: H01L27/144 ,  H01L27/15 ,  H01S5/021 ,  H01S5/0261 ,  H01S5/183 ,  H01S2301/173

Abstract: A opto-electronic semiconductor structure having an electrochromic switch includes a monocrystalline silicon substrate and an amorphous oxide material overlying the monocrystalline silicon substrate. A monocrystalline perovskite oxide material overlies the amorphous oxide material and a monocrystalline compound semiconductor material overlies the monocrystalline perovskite oxide material. An optical source component that is adapted to transmit radiant energy may be formed within the monocrystalline compound semiconductor material. An electrochromic switch may be optically coupled to the optical source component. An optical detector component that is adapted to receive radiant energy may be formed within the monocrystalline compound semiconductor material. An electrochromic switch may be optically coupled to the optical detector component.

Abstract translation: 具有电致变色开关的光电子半导体结构包括单晶硅衬底和覆盖在单晶硅衬底上的无定形氧化物材料。 单晶钙钛矿氧化物材料覆盖无定形氧化物材料，单晶化合物半导体材料覆盖在单晶钙钛矿氧化物材料上。 可以在单晶化合物半导体材料内形成适于透射辐射能的光源组件。 电致变色开关可以光耦合到光源组件。 可以在单晶化合物半导体材料内形成适于接收辐射能的光学检测器部件。 电致变色开关可以光学耦合到光学检测器部件。

公开(公告)号：US20030022408A1

公开(公告)日：2003-01-30

申请号：US09911495

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Barbara F. Barenburg ,  Timothy Brophy

IPC: H01L021/00

CPC classification number: H01L27/0688 ,  G02B6/12004 ,  G02B6/12009 ,  G02B6/122 ,  G02B6/132 ,  G02B6/43 ,  G02B2006/12061 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8221 ,  H01L21/8258 ,  H01L27/0605 ,  H01L2924/00011 ,  H01L2224/80001

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials. An arrayed wavelength grating device is formed overlying the silicon wafer.

Abstract translation: 通过形成用于生长单晶层的柔性衬底，可以将单晶材料的高质量外延层生长在覆盖单晶衬底（例如大硅晶片）上。 容纳缓冲层包括通过硅氧化物的非晶界面层与硅晶片间隔开的单晶氧化物层。 非晶界面层消耗应变并允许高质量单晶氧化物容纳缓冲层的生长。 容纳缓冲层与下面的硅晶片和上覆的单晶材料层晶格匹配。 通过非晶界面层处理容纳缓冲层和底层硅衬底之间的任何晶格失配。 此外，顺应性衬底的形成可以包括利用表面活性剂增强的外延，将单晶硅外延生长到单晶氧化物上，以及Zintl相材料的外延生长。 在硅晶片上形成阵列波长光栅器件。

公开(公告)号：US20030020121A1

公开(公告)日：2003-01-30

申请号：US09911464

申请日：2001-07-25

Applicant: MOTOROLA, INC.

Inventor： Stephen Kent Rockwell ,  John E. Holmes ,  Nestor Javier Escalera ,  Steven James Franson

IPC: H01L029/76 ,  H01L029/94 ,  H01L021/8249 ,  H01L021/8222

CPC classification number: H01L27/0605 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02505 ,  H01L21/02513 ,  H01L21/02521 ,  H01L21/8258

Abstract: A semiconductor structure for a high frequency monolithic switch matrix includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, and a high frequency semiconductor integrated formed in and over the monocrystalline compound semiconductor material having one or more input ports and one or more output ports. The high frequency semiconductor integrated circuit also includes a high frequency switch circuit that is electrically coupled to a switch driver control circuit that is fabricated on the monocrystalline compound semiconductor material and which provides the DC signals required to control the high frequency circuit.

Abstract translation: 用于高频单片开关矩阵的半导体结构包括单晶硅衬底，覆盖单晶硅衬底的无定形氧化物材料，覆盖在非晶氧化物材料上的单晶钙钛矿氧化物材料，覆盖单晶钙钛矿氧化物材料的单晶化合物半导体材料，以及 集成形成在具有一个或多个输入端口和一个或多个输出端口的单晶化合物半导体材料中和之上的高频半导体。 高频半导体集成电路还包括高频开关电路，其电耦合到制造在单晶化合物半导体材料上的开关驱动器控制电路，并提供控制高频电路所需的DC信号。