公开(公告)号：US20200286883A1

公开(公告)日：2020-09-10

申请号：US16806257

申请日：2020-03-02

Applicant: STMicroelectronics (Tours) SAS ,  STMicroelectronics S.r.l.

Inventor： Jean-Michel SIMONNET ,  Sophie NGO ,  Simone RASCUNÀ

IPC: H01L27/02 ,  H02H9/04 ,  H01L29/16 ,  H01L29/04 ,  H01L29/20 ,  H01L29/868 ,  H01L29/417

Abstract: Overvoltage protection circuits are provided. In some embodiments, an overvoltage protection circuit includes a first diode made of a first semiconductor material having a bandgap width greater than that of silicon. A second diode is included and is electrically cross-coupled with the first diode. The second diode is made of a second semiconductor material different from the first semiconductor material.

公开(公告)号：US20200091470A1

公开(公告)日：2020-03-19

申请号：US16692367

申请日：2019-11-22

Applicant: STMicroelectronics (Tours) SAS

Inventor： Julien LADROUE ,  Mohamed BOUFNICHEL

IPC: H01M2/06 ,  H01M2/30 ,  H01M2/02 ,  H01M2/20 ,  H01M10/058

Abstract: A battery structure has structure anode and cathode contacts on a front face and on a rear face. The battery structure includes a battery having battery anode and cathode contacts only on a front face thereof. A film including a conductive layer and an insulating layer jackets the battery. The conductive layer extends over the battery anode and cathode contacts and is interrupted therebetween. Openings are provided in the insulating layer on the front and rear faces of the battery structure to form the structure anode and cathode contacts of the battery structure.

公开(公告)号：US20200075445A1

公开(公告)日：2020-03-05

申请号：US16552464

申请日：2019-08-27

Applicant: STMICROELECTRONICS (TOURS) SAS

Inventor： Olivier ORY ,  Romain JAILLET

IPC: H01L23/31 ,  H01L29/861 ,  H01L21/56 ,  H01L21/78

Abstract: The invention concerns a device comprising a support, an electrically-conductive layer covering the support, a semiconductor substrate on the conductive layer, and an insulating casing.

公开(公告)号：US10529703B2

公开(公告)日：2020-01-07

申请号：US15436998

申请日：2017-02-20

Applicant: STMicroelectronics (Tours) SAS

Inventor： Aurelie Arnaud

IPC: H01L23/60 ,  H01L27/02 ,  H01L21/265 ,  H01L21/324 ,  H01L27/08 ,  H01L29/06 ,  H01L29/167 ,  H01L29/36 ,  H01L29/66 ,  H02H9/04

Abstract: An electrostatic discharge protection device includes the following successive structures: a very heavily-doped semiconductor substrate of a first conductivity type; a first heavily-doped buried semiconductor layer of a second conductivity type; a first lightly-doped semiconductor layer of the second conductivity type; and a second heavily-doped layer of the first conductivity type. The device further includes, located between first heavily-doped buried semiconductor layer and the first lightly-doped semiconductor layer, a third doped layer of the first conductivity type having a thickness and a dopant atom concentration configured to form, at a junction of the first lightly-doped semiconductor layer and the third layer, a diode having a reverse punchthrough operation.

公开(公告)号：US20190296005A1

公开(公告)日：2019-09-26

申请号：US16359431

申请日：2019-03-20

Applicant: STMicroelectronics (Tours) SAS

Inventor： Patrick POVEDA

IPC: H01L27/02 ,  H01L29/866 ,  H01L27/06 ,  H01L29/06 ,  H01L29/87 ,  H01L23/522 ,  H03H11/04 ,  H01L23/528 ,  H02H9/04

Abstract: An electronic component includes first and second separate semiconductor regions. A third semiconductor region is arranged under and between the first and second semiconductor regions. The first and third semiconductor regions define electrodes of a first diode. The second and third semiconductor regions define electrodes of a second diode. The first diode is an avalanche diode.

公开(公告)号：US20190296004A1

公开(公告)日：2019-09-26

申请号：US16353658

申请日：2019-03-14

Applicant: STMicroelectronics (Tours) SAS ,  STMicroelectronics S.r.l.

Inventor： Aurelie Arnaud ,  Andrea Brischetto

IPC: H01L27/02 ,  H01L29/861 ,  H01L29/16 ,  H02H9/04

Abstract: An ESD protection circuit includes a terminal connected to the cathode of a first diode and to the anode of a second diode, where the cathode of the second diode is not made of epitaxial silicon.

公开(公告)号：US20190237717A1

公开(公告)日：2019-08-01

申请号：US16255625

申请日：2019-01-23

Applicant: STMicroelectronics (Tours) SAS

Inventor： Mohamed Boufnichel

IPC: H01M2/10 ,  H01M10/46 ,  H02J7/02

CPC classification number: H01M2/1066 ,  H01M2/0207 ,  H01M2/0275 ,  H01M2/0287 ,  H01M2/1061 ,  H01M2/204 ,  H01M6/40 ,  H01M10/0436 ,  H01M10/425 ,  H01M10/441 ,  H01M10/46 ,  H01M2010/0495 ,  H01M2220/30 ,  H01M2300/0065 ,  H02J7/022

Abstract: The disclosure relates to microbattery devices and assemblies. In an embodiment, a device includes a plurality of microbatteries, a first flexible encapsulation film, and a second flexible encapsulation film. Each of the microbatteries includes a first contact terminal and a second contact terminal spaced apart from one another. The first flexible encapsulation film includes a first conductive layer electrically coupled to the first contact terminal of each of the microbatteries, and a first insulating layer on the first conductive layer. The second flexible encapsulation film includes a second conductive layer electrically coupled to the second contact terminal of each of the microbatteries, and a second insulating layer on the second conductive layer.

公开(公告)号：US20190115915A1

公开(公告)日：2019-04-18

申请号：US16149967

申请日：2018-10-02

Applicant: STMicroelectronics (Tours) SAS

Inventor： Ghafour Benabdelaziz ,  Cedric Reymond

IPC: H03K17/56 ,  H02P27/04 ,  H02M7/06

CPC classification number: H03K17/56 ,  H02M1/08 ,  H02M5/2573 ,  H02M7/06 ,  H02M7/1555 ,  H02P27/04 ,  H03K17/722 ,  H03K17/725 ,  H03K17/74

Abstract: A thyristor or triac control circuit includes a first capacitive element that is series-connected with a first diode between a first terminal and a second terminal intended to be coupled to a gate of the thyristor or triac. A second capacitive element is coupled between the second terminal and a third terminal intended to be connected to a conduction terminal of the thyristor or triac on the gate side of the thyristor or triac. A second diode is coupled between the third terminal and a node of connection of the first capacitive element and first diode.

公开(公告)号：US20190088735A1

公开(公告)日：2019-03-21

申请号：US16197011

申请日：2018-11-20

Applicant: STMicroelectronics (Tours) SAS

Inventor： Frédéric Lanois ,  Alexei Ankoudinov ,  Vladimir Rodov

IPC: H01L29/06 ,  H01L29/10 ,  H01L29/423 ,  H01L29/78 ,  H01L29/861 ,  H01L27/06 ,  H02M3/158 ,  H01L27/092

Abstract: A diode includes upper and lower electrodes and first and second N-type doped semiconductor substrate portions connected to the lower electrode. A first vertical transistor and a second transistor are formed in the first portion and series-connected between the electrodes. The gate of the first transistor is N-type doped and coupled to the upper electrode. The second transistor has a P channel and has a P-type doped gate. First and second doped areas of the second conductivity type are located in the second portion and are separated by a substrate portion topped with another N-type doped gate. The first doped area is coupled to the gate of the second transistor. The second doped area and the other gate are coupled to the upper electrode.

公开(公告)号：US10148810B2

公开(公告)日：2018-12-04

申请号：US15045935

申请日：2016-02-17

Applicant: STMicroelectronics (Tours) SAS

Inventor： Jean-Michel Simonnet ,  Christian Ballon

IPC: H04M1/74 ,  H01L27/02 ,  H02H9/04 ,  H04M3/18 ,  H04M3/00 ,  H04M19/08

Abstract: A structure protects a SLIC telephone line interface against overvoltages lower than a negative threshold or higher than a positive threshold. The structure includes at least one thyristor connected between each conductor of the telephone line and a reference potential. For all of the included thyristors, a metallization corresponding to the main electrode on the gate side is in contact, by its entire surface, with a corresponding semiconductor region. Furthermore, the gate of each thyristor is directly connected to a voltage source defining one of the thresholds.