公开(公告)号：US09818860B2

公开(公告)日：2017-11-14

申请号：US15365150

申请日：2016-11-30

申请人： DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Akitaka Soeno ,  Jun Morimoto

发明人： Yuichi Takeuchi ,  Naohiro Suzuki ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Akitaka Soeno ,  Jun Morimoto ,  Narumasa Soejima ,  Yukihiko Watanabe

IPC分类号： H01L29/78 ,  H01L29/16 ,  H01L21/82 ,  H01L29/417 ,  H01L29/66 ,  H01L29/10 ,  H01L29/872 ,  H01L21/04 ,  H01L21/306 ,  H01L21/308 ,  H01L29/423 ,  H01L21/761 ,  H01L29/15 ,  H01L29/06 ,  H01L29/08 ,  H01L29/861

CPC分类号： H01L29/7811 ,  H01L21/046 ,  H01L21/0475 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/761 ,  H01L21/8213 ,  H01L29/0615 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/157 ,  H01L29/158 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7806 ,  H01L29/7813 ,  H01L29/861 ,  H01L29/872

摘要： An SiC semiconductor device has a p type region including a low concentration region and a high concentration region filled in a trench formed in a cell region. A p type column is provided by the low concentration region, and a p+ type deep layer is provided by the high concentration region. Thus, since a SJ structure can be made by the p type column and the n type column provided by the n type drift layer, an on-state resistance can be reduced. As a drain potential can be blocked by the p+ type deep layer, at turnoff, an electric field applied to the gate insulation film can be alleviated and thus breakage of the gate insulation film can be restricted. Therefore, the SiC semiconductor device can realize the reduction of the on-state resistance and the restriction of breakage of the gate insulation film.

公开(公告)号：US09184271B2

公开(公告)日：2015-11-10

申请号：US12822328

申请日：2010-06-24

申请人： Masahiro Sugimoto ,  Tetsu Kachi ,  Yoshitaka Nakano ,  Tsutomu Uesugi ,  Hiroyuki Ueda ,  Narumasa Soejima

发明人： Masahiro Sugimoto ,  Tetsu Kachi ,  Yoshitaka Nakano ,  Tsutomu Uesugi ,  Hiroyuki Ueda ,  Narumasa Soejima

IPC分类号： H01L29/778 ,  H01L29/66 ,  H01L21/28 ,  H01L29/20

CPC分类号： H01L29/778 ,  H01L21/28 ,  H01L29/2003 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/7787

摘要： A semiconductor device has a stacked structure in which a p-GaN layer, an SI-GaN layer, and an AlGaN layer are stacked, and has a gate electrode that is formed at a top surface side of the AlGaN layer. A band gap of the AlGaN layer is wider than a band gap of the p-GaN layer and the SI-GaN layer. Moreover, impurity concentration of the SI-GaN layer is less than 1×1017 cm−3. Semiconductor devices including III-V semiconductors may have a stable normally-off operation.

摘要翻译： 半导体器件具有其中堆叠p-GaN层，SI-GaN层和AlGaN层的堆叠结构，并且具有形成在AlGaN层的顶表面侧的栅电极。 AlGaN层的带隙比p-GaN层和SI-GaN层的带隙宽。 此外，SI-GaN层的杂质浓度小于1×1017cm-3。 包括III-V半导体的半导体器件可以具有稳定的常关断操作。

公开(公告)号：US20150115286A1

公开(公告)日：2015-04-30

申请号：US14400365

申请日：2013-06-06

申请人： Masahiro SUGIMOTO ,  Hidefumi TAKAYA ,  Akitaka SOENO ,  Jun MORIMOTO ,  DENSO CORPORATION ,  TOYOTA JIDOSHA KABUSHIKI KAISHA

发明人： Yuichi Takeuchi ,  Naohiro Suzuki ,  Masahiro Sugimoto ,  Hidefumi Takaya ,  Akitaka Soeno ,  Jun Morimoto ,  Narumasa Soejima ,  Yukihiko Watanabe

IPC分类号： H01L29/78 ,  H01L29/06 ,  H01L21/308 ,  H01L29/10 ,  H01L21/04 ,  H01L21/306 ,  H01L29/66 ,  H01L29/16

CPC分类号： H01L29/7811 ,  H01L21/046 ,  H01L21/0475 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/761 ,  H01L21/8213 ,  H01L29/0615 ,  H01L29/063 ,  H01L29/0634 ,  H01L29/0661 ,  H01L29/0696 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/157 ,  H01L29/158 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/66727 ,  H01L29/66734 ,  H01L29/7806 ,  H01L29/7813 ,  H01L29/861 ,  H01L29/872

摘要： An SiC semiconductor device has a p type region including a low concentration region and a high concentration region filled in a trench formed in a cell region. A p type column is provided by the low concentration region, and a p+ type deep layer is provided by the high concentration region. Thus, since a SJ structure can be made by the p type column and the n type column provided by the n type drift layer, an on-state resistance can be reduced. As a drain potential can be blocked by the p+ type deep layer, at turnoff, an electric field applied to the gate insulation film can be alleviated and thus breakage of the gate insulation film can be restricted. Therefore, the SiC semiconductor device can realize the reduction of the on-state resistance and the restriction of breakage of the gate insulation film.

摘要翻译： SiC半导体器件具有包含低浓度区域和填充在形成于单元区域的沟槽中的高浓度区域的p型区域。 由低浓度区域提供p型列，并且由高浓度区域提供p +型深层。 因此，由于可以通过由n型漂移层提供的p型列和n型列来形成SJ结构，所以可以降低导通电阻。 由于漏极电位可以被p +型深层阻挡，所以在关断时，施加到栅极绝缘膜的电场可以减轻，从而可以限制栅极绝缘膜的破裂。 因此，SiC半导体器件可以实现导通电阻的降低和栅极绝缘膜的破损的限制。

公开(公告)号：US08876251B2

公开(公告)日：2014-11-04

申请号：US12896703

申请日：2010-10-01

申请人： Masahiro Sugimoto ,  Akira Kida ,  Susumu Hirosawa ,  Takeaki Nakano ,  Hiroyuki Tanaka ,  Seiji Suzuki ,  Yoshiaki Suzuki ,  Yuji Kanome

发明人： Masahiro Sugimoto ,  Akira Kida ,  Susumu Hirosawa ,  Takeaki Nakano ,  Hiroyuki Tanaka ,  Seiji Suzuki ,  Yoshiaki Suzuki ,  Yuji Kanome

IPC分类号： B41J2/165 ,  B41J2/17 ,  B41J29/377

CPC分类号： B41J29/377 ,  B41J2/165 ,  B41J2/1714

摘要： An apparatus includes a supply unit having a humidifying portion that supplies humidified gas near a nozzle array of a line-type recording head. In correspondence to displacement of the recording head in a direction of the nozzle array, at least one of an introducing direction and an introducing position of the supplied humidified gas can be changed.

摘要翻译： 一种装置，包括：供给单元，具有在线型记录头的喷嘴列附近供给加湿气体的加湿部。 对应于记录头沿着喷嘴阵列的方向的位移，可以改变供应的加湿气体的导入方向和导入位置中的至少一个。

公开(公告)号：US20130330896A1

公开(公告)日：2013-12-12

申请号：US14000901

申请日：2012-09-04

申请人： Shinichiro Miyahara ,  Toshimasa Yamamoto ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

发明人： Shinichiro Miyahara ,  Toshimasa Yamamoto ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

IPC分类号： H01L29/66

CPC分类号： H01L29/66666 ,  H01L21/3065 ,  H01L29/1608 ,  H01L29/34 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/7813

摘要： A manufacturing method of a silicon carbide semiconductor device includes: forming a drift layer on a silicon carbide substrate; forming a base layer on or in a surface portion of the drift layer; forming a source region in a surface portion of the base layer; forming a trench to penetrate the base layer and to reach the drift layer; forming a gate electrode on a gate insulation film in the trench; forming a source electrode electrically connected to the source region and the base layer; and forming a drain electrode on a back surface of the substrate. The forming of the trench includes: flattening a substrate surface; and etching to form the trench after flattening.

摘要翻译： 碳化硅半导体器件的制造方法包括：在碳化硅衬底上形成漂移层; 在漂移层的表面部分上或其中形成基底层; 在所述基底层的表面部分中形成源区; 形成沟槽以穿透基层并到达漂移层; 在沟槽中的栅极绝缘膜上形成栅电极; 形成与源极区域和基极层电连接的源电极; 以及在所述基板的背面上形成漏电极。 沟槽的形成包括：使基底表面变平; 并进行蚀刻以在平坦化之后形成沟槽。

公开(公告)号：US08299498B2

公开(公告)日：2012-10-30

申请号：US12595253

申请日：2008-04-07

申请人： Tsutomu Uesugi ,  Kenji Ito ,  Osamu Ishiguro ,  Tetsu Kachi ,  Masahiro Sugimoto

发明人： Tsutomu Uesugi ,  Kenji Ito ,  Osamu Ishiguro ,  Tetsu Kachi ,  Masahiro Sugimoto

IPC分类号： H01L29/66

CPC分类号： H01L29/2003 ,  H01L29/045 ,  H01L29/205 ,  H01L29/66462 ,  H01L29/7786 ,  H01L29/7788 ,  H01L29/7789 ,  H01L29/7828

摘要： A semiconductor device 10 is provided with a first hetero junction 40b configured with two types of nitride semiconductors having different bandgap energy from each other, a second hetero junction 50b configured with two types of nitride semiconductors having different bandgap energy from each other, and a gate electrode 58 facing the second hetero junction 50b. The second hetero junction 50b is configured to be electrically connected to the first hetero junction 40b. The first hetero junction 40b is a c-plane and the second hetero junction 50b is either an a-plane or an m-plane.

摘要翻译： 半导体器件10设置有由彼此具有不同带隙能量的两种类型的氮化物半导体构成的第一异质结40b，由具有彼此具有不同带隙能量的两种类型的氮化物半导体构成的第二异质结50b，以及栅极 电极58面对第二异质结50b。 第二异质结50b被配置为电连接到第一异质结40b。 第一异质结40b是c面，第二异质结50b是a面或m面。

公开(公告)号：US20120181551A1

公开(公告)日：2012-07-19

申请号：US13348781

申请日：2012-01-12

申请人： Shinichiro Miyahara ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

发明人： Shinichiro Miyahara ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Yukihiko Watanabe ,  Narumasa Soejima ,  Tsuyoshi Ishikawa

IPC分类号： H01L29/24

CPC分类号： H01L21/0475 ,  H01L29/045 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/66068

摘要： A silicon carbide semiconductor device includes a silicon carbide semiconductor substrate and a trench. The silicon carbide semiconductor substrate has an offset angle with respect to a (0001) plane or a (000-1) plane and has an offset direction in a direction. The trench is provided from a surface of the silicon carbide semiconductor substrate. The trench extends in a direction whose interior angle with respect to the offset direction is 30 degrees or −30 degrees.

摘要翻译： 碳化硅半导体器件包括碳化硅半导体衬底和沟槽。 碳化硅半导体衬底相对于（0001）面或（000-1）面具有偏移角，并且在<11-20>方向上具有偏移方向。 从碳化硅半导体衬底的表面提供沟槽。 沟槽沿相对于偏移方向的内角为30度或-30度的方向延伸。

公开(公告)号：US20110316049A1

公开(公告)日：2011-12-29

申请号：US13254638

申请日：2009-03-02

申请人： Masahiro Sugimoto ,  Narumasa Soejima ,  Tsutomu Uesugi ,  Masahito Kodama ,  Eiko Ishii

发明人： Masahiro Sugimoto ,  Narumasa Soejima ,  Tsutomu Uesugi ,  Masahito Kodama ,  Eiko Ishii

IPC分类号： H01L29/778 ,  H01L21/20

CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/41766 ,  H01L29/66462 ,  H01L29/7788

摘要： Provided are a vertical nitride semiconductor device in which occurrence of leak currents can be suppressed, and a method for manufacturing such nitride semiconductor device. A nitride semiconductor device, which is a vertical HEMT, is provided with an n− type GaN first nitride semiconductor layer, p+ type GaN second nitride semiconductor layers, an n− type GaN third nitride semiconductor layer, and an n− type AlGaN fourth nitride semiconductor layer that is in hetero junction with a front surface of the third nitride semiconductor layer. Openings that penetrate the third nitride semiconductor layer and reach front surfaces of the second nitride semiconductor layers are provided at positions isolated from the peripheral edge of the third nitride semiconductor layer. Source electrodes are provided in the openings. Etching damage that is in contact with the source electrodes is surrounded by a region where no etching damage is formed.

摘要翻译： 提供了可以抑制泄漏电流的发生的垂直氮化物半导体器件，以及这种氮化物半导体器件的制造方法。 作为垂直HEMT的氮化物半导体器件设置有n型GaN第一氮化物半导体层，p +型GaN第二氮化物半导体层，n型GaN第三氮化物半导体层和n型AlGaN第四氮化物半导体层 半导体层，其与第三氮化物半导体层的前表面处于异质结。 穿过第三氮化物半导体层并到达第二氮化物半导体层的前表面的开口设置在与第三氮化物半导体层的外围边缘隔离的位置处。 源电极设置在开口中。 与源电极接触的蚀刻损伤被没有形成蚀刻损伤的区域包围。

公开(公告)号：US20110309464A1

公开(公告)日：2011-12-22

申请号：US13164246

申请日：2011-06-20

申请人： Kensaku YAMAMOTO ,  Naohiro Suzuki ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Jun Morimoto ,  Narumasa Soejima ,  Tsuyoshi Ishikawa ,  Yukihiko Watanabe

发明人： Kensaku YAMAMOTO ,  Naohiro Suzuki ,  Hidefumi Takaya ,  Masahiro Sugimoto ,  Jun Morimoto ,  Narumasa Soejima ,  Tsuyoshi Ishikawa ,  Yukihiko Watanabe

IPC分类号： H01L29/06

CPC分类号： H01L29/7813 ,  H01L29/0619 ,  H01L29/0661 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/407 ,  H01L29/66068 ,  H01L29/7397 ,  H01L29/7811 ,  H01L29/8613

摘要： A semiconductor device includes a semiconductor substrate and an electric field terminal part. The semiconductor substrate includes a substrate, a drift layer disposed on a surface of the substrate, and a base layer disposed on a surface of the drift layer. The semiconductor substrate is divided into a cell region in which a semiconductor element is disposed and a peripheral region that surrounds the cell region. The base region has a bottom face located on a same plane throughout the cell region and the peripheral region and provides an electric field relaxing layer located in the peripheral region. The electric field terminal part surrounds the cell region and a portion of the electric field relaxing layer and penetrates the electric field relaxing layer from a surface of the electric field relaxing layer to the drift layer.

摘要翻译： 半导体器件包括半导体衬底和电场端子部分。 半导体衬底包括衬底，设置在衬底的表面上的漂移层和设置在漂移层的表面上的基底层。 半导体衬底被分成其中设置半导体元件的单元区域和围绕单元区域的外围区域。 基底区域具有位于整个电池区域和外围区域的同一平面上的底面，并且提供位于周边区域中的电场弛豫层。 电场端子部围绕电池区域和电场缓和层的一部分，从电场缓和层的表面向漂移层贯通电场缓和层。

公开(公告)号：US20110254903A1

公开(公告)日：2011-10-20

申请号：US13087286

申请日：2011-04-14

申请人： Yuji Kanome ,  Hiroyuki Tanaka ,  Yoshiaki Suzuki ,  Seiji Suzuki ,  Masahiro Sugimoto ,  Takeaki Nakano ,  Susumu Hirosawa

发明人： Yuji Kanome ,  Hiroyuki Tanaka ,  Yoshiaki Suzuki ,  Seiji Suzuki ,  Masahiro Sugimoto ,  Takeaki Nakano ,  Susumu Hirosawa

IPC分类号： B41J2/175

CPC分类号： B41J2/17509 ,  B41J2/17596

摘要： Provided is a printing apparatus in which bubbles in a print head are easily removed. The printing apparatus includes a first one-way valve disposed between the pump and the ink tank in the collection channel, the first one-way valve allowing movement of ink from the pump to the ink tank and blocking movement of ink from the ink tank to the pump; a circulation channel that connects the ink tank to the collection channel at a position between the pump and the first one-way valve, the circulation channel enabling circulation of ink from the ink tank, through the print head, and to the ink tank; and a second one-way valve disposed in the circulation channel, the second one-way valve allowing movement of ink from the ink tank to the pump and blocking movement of ink from the pump to the ink tank.

摘要翻译： 提供了一种其中容易去除打印头中的气泡的打印设备。 打印装置包括设置在收集通道中的泵和墨水罐之间的第一单向阀，第一单向阀允许墨水从泵移动到墨水盒并阻止墨水从墨水盒移动到 泵; 循环通道，其在所述泵和所述第一单向阀之间的位置处将所述墨水罐连接到所述收集通道，所述循环通道使得能够从所述墨水罐通过所述打印头和所述墨水罐循环墨水; 以及设置在所述循环通道中的第二单向阀，所述第二单向阀允许墨从所述墨罐移动到所述泵并阻止墨从所述泵移动到所述墨槽。