摘要:
The improved material deposition process of the present invention utilizes a first, low temperature deposition step followed by a second, high temperature/high power deposition step. In the first deposition step a collimation plate is placed between the sputtering target and the substrate, such that a collimated stream of sputtered material is deposited upon the substrate. The collimated stream provides a seed layer which aids in eliminating voids by partially filling the holes and grooves in the surface of the substrate. The second deposition step is conducted as a high temperature sputtering deposition. At the high temperature the sputtered material joins and flows with the seed layer, whereby the holes and grooves are more easily filled without voids and an improved planarized layer is achieved.
摘要:
A sputtering coil for a plasma chamber in a semiconductor fabrication system is provided. The sputtering coil couples energy into a plasma and also provides a source of sputtering material to be sputtered onto a workpiece from the coil to supplement material being sputtered from a target onto the workpiece. Alternatively a plurality of coils may be provided, one primarily for coupling energy into the plasma and the other primarily for providing a supplemental source of sputtering material to be sputtered on the workpiece.
摘要:
A scrubber box is provided that includes a tank adapted to receive a substrate for cleaning, supports outside of the tank and adapted to couple to ends of scrubber brushes disposed within the tank, a motor mounted to each of the supports and adapted to rotate the scrubber brushes, a base to which the supports are pivotally mounted via spherical bearings adapted to permit toe-in of the scrubber brushes, a brush gap actuator adapted, via a crank and rocker mechanism, to substantially simultaneously pivot the supports toward or away from each other so as to permit the scrubber brushes to substantially simultaneously achieve or break contact with the substrate, and a toe-in actuator adapted to move two of the spherical bearings toward or away from each other so as to adjust a toe-in angle between the scrubber brushes.
摘要:
Embodiments described herein provide an application for delivery of fluids within substrate processing systems. More particularly, embodiments described herein provide applications for delivery of processing chemicals within substrate processing systems. In one embodiment, a fluid delivery system is provided. The fluid delivery system comprises a bulk fluid source for supplying fluids, a fluid delivery module for controlling and monitoring a ratio of fluids flowing from the bulk fluid source, a first stream line positioned downstream from the fluid delivery module, a first switch positioned along the first stream line, a second stream line positioned downstream from the fluid delivery module, and a second switch positioned along the second stream line, wherein the fluid delivery module splits the fluids from the bulk fluid source into two streams flowing through the first stream line and the second stream line according to a pre-defined ratio.
摘要:
A polishing fluid delivery apparatus has been provided that in one embodiment includes a support member, a dispense arm, a polishing fluid delivery tube and a variable restricting device. The dispense arm extends from an upper portion of the support member and has an outlet of the delivery tube coupled thereto. The restricting device interfaces with the delivery tube and is adapted to provide a variable restriction to flow passing through the delivery tube. In another embodiment, the restricting device is a pinch valve and the tube in continuous from the outlet to beyond a portion that interfaces with the pinch valve. In yet another embodiment, the position of the dispense arm is controllable.
摘要:
The present invention provides an electro-chemical deposition system that is designed with a flexible architecture that is expandable to accommodate future designs and gap fill requirements and provides satisfactory throughput to meet the demands of other processing systems. The electro-chemical deposition system generally comprises a mainframe having a mainframe wafer transfer robot, a loading station disposed in connection with the mainframe, one or more processing cells disposed in connection with the mainframe, and an electrolyte supply fluidly connected to the one or more electrical processing cells. Preferably, the electro-chemical deposition system includes a spin-rinse-dry (SRD) station disposed between the loading station and the mainframe, a rapid thermal anneal chamber attached to the loading station, and a system controller for controlling the electro-chemical deposition process and the components of the electro-chemical deposition system.
摘要:
In a first aspect, a first apparatus is provided for a chemical mechanical polishing (CMP) process. The first apparatus includes (1) a rotatable member; (2) an end effector adapted to receive and retain a conditioning disk; and (3) an elastic device disposed between the rotatable member and the end effector. The elastic device is (a) adapted to rotate the end effector via a torque from the rotatable member, and (b) flexibly extensible so as to impart a force to the end effector while permitting the end effector to deviate from a perpendicular alignment with the rotatable member in order for a conditioning surface of the conditioning disk to conform to an irregular polishing surface of a pad being conditioned. Numerous other aspects are provided, including methods and apparatus for using liquid or gas to deter polishing slurry or debris from entering the conditioning head.
摘要:
A scrubber box is provided that includes a tank adapted to receive a substrate for cleaning, supports outside of the tank and adapted to couple to ends of scrubber brushes disposed within the tank, a motor mounted to each of the supports and adapted to rotate the scrubber brushes, a base to which the supports are pivotally mounted via spherical bearings adapted to permit toe-in of the scrubber brushes, a brush gap actuator adapted, via a crank and rocker mechanism, to substantially simultaneously pivot the supports toward or away from each other so as to permit the scrubber brushes to substantially simultaneously achieve or break contact with the substrate, and a toe-in actuator adapted to move two of the spherical bearings toward or away from each other so as to adjust a toe-in angle between the scrubber brushes.
摘要:
The present invention provides an apparatus and associated method in which the apparatus comprises a multiple blade robot and a compensating device. The multiple blade robot includes at least one set of robot blades. The compensating device adjusts for differences in spacing between the set of robot blades and spacing between two or more cells. In different embodiments, the compensating device may be coupled to one or more of the process cells, one or more of the substrate holder systems, or one or more of the robot blades.
摘要:
The present invention pertains to an apparatus and method useful in semiconductor processing. The apparatus and method can be used to provide a seal which enables a first portion of a semiconductor processing chamber to be operated at a first pressure while a second portion of the semiconductor processing chamber is operated at a second, different pressure. The sealing apparatus and method enable processing of a semiconductor substrate under a partial vacuum which renders conductive/convective heat transfer impractical, while at least a portion of the substrate support platform is under a pressure adequate to permit heat transfer using a conductive/convective heat transfer means. The sealing apparatus comprises a thin, metal-comprising layer, typically in the form of a strip or band, brazed to at least two different surfaces within said processing chamber, whereby the first and second portions of the semiconductor processing chamber are pressure isolated from each other. Preferably, the metal-comprising layer exhibits a cross-sectional thickness of less than about 0.039 in. (1 mm). The invention is particularly useful when there is a differential in linear expansion coefficient of at least 3×10−3 in./in./° C., measured at 600° C., between the surfaces to be bridged by the thin, metal-comprising layer.