Abstract:
In a method for error correcting a data signal that is transmitted via a channel and contains data blocks with associated error checking information, the data signal is first equalized, with calculated soft-bit information. In a subsequent step, the error checking information is evaluated with respect to the data block. If the evaluation of the error checking information shows that a single bit error is present in one message bit, the single bit error is corrected only when a condition that is dependent on the soft-bit information is satisfied.
Abstract:
The disclosed invention relates to a process for making a multiphase mixture, comprising: flowing a first fluid stream through a process microchannel, the first fluid stream comprising at least one liquid and/or at least one gas, the process microchannel having an apertured section; flowing a second fluid stream through the apertured section into the process microchannel in contact with the first fluid stream to form the multiphase mixture, the second fluid stream comprising at least one gas and/or at least one microbody-forming material, the first fluid stream forming a continuous phase in the multiphase mixture, the second fluid stream forming a discontinuous phase dispersed in the continuous phase.
Abstract:
A method for channel equalization of received data includes steps of: receiving the received data in a received data packet; calculating filter setting coefficients for an input filter and calculating equalizer setting coefficients for an equalizer; setting the input filter using the filter setting coefficients and setting the equalizer using the equalizer setting coefficients; equalizing the received data using the input filter and using the equalizer; determining channel parameters for the transmission channel from the received data Xk; storing the channel parameters in a data field; and performing the step of calculating the filter setting coefficients for the input filter and calculating the equalizer setting coefficients for the equalizer by performing a GIVENS rotation of the data field.
Abstract:
A method for foundation consolidation combining vacuum preloading and geomembrane bag assembly loading, which comprises: digging a slurry pit, filling mud into the slurry pit and conducting vacuum preloading pumpdrainage for multiple times, laying the geomembrane bag assemblies above the soft slurry seam processed through vacuum preloading pumpdrainage inside the slurry pit to form a plurality of loading layers, and laying the geomembrane bag assemblies by piling geomembrane bags. In view of the engineering complexity and uneven settlement resulting from conventional vacuum preloading using slag loading, geomembrane bag for loading to overcome the adverse effects of slag loading. In the present invention, the drainage system and the geomembrane bag assemblies are laid out to fully leverage their perspective properties, so as to improve the transmission of vacuity in the whole soil mass, speed up the drainage rate, and increase the degree of consolidation.
Abstract:
The invention provides methods, apparatus and systems in which there is partial boiling of a liquid in a mini-channel or microchannel. The partial boiling removes heat from an exothermic process.
Abstract:
The disclosed technology relates to an apparatus, comprising: at least one microchannel, the microchannel comprising at least one heat transfer wall; a porous thermally conductive support in the microchannel in contact with the heat transfer wall; a catalyst or a sorption medium supported by the porous support; and a heat source and/or heat sink in thermal contact with the heat transfer wall.
Abstract:
Methods and structures are described for determining contact resistivities and Schottky barrier heights for conductors deposited on semiconductor wafers that can be combined with combinatorial processing, allowing thereby numerous processing conditions and materials to be tested concurrently. Methods for using multi-ring as well as single-ring CTLM structures to cancel parasitic resistance are also described, as well as structures and processes for inline monitoring of properties.
Abstract:
An electrical impedance detecting device of a portable electrical impedance imaging system by utilizing a theory of sending excitation signal and detecting response signal and a method thereof, wherein the excitation signal is a constant square wave excitation current signal, the response voltage signal on a target is transformed to a square wave signal with appropriate amplitudes by buffering, amplifying, RC filtering and differential amplifying circuits, and then is transformed to a digital signal at a proper time by an analog-to-digital converter. The response voltage signal is sampled once when at high level and once when at low level for every circle of the square wave signal by the ADC, and a sample V1 and a sample V2 are obtained respectively, difference of the sample V1 and the sample V2 is taken as a detecting result for one circle. An average value of the detecting result from a plurality of circles may be taken as a final result. Information of electrical impedance is illustrated by the final result because the excitation current signal is constant.
Abstract:
The present application discloses a method and an apparatus for generating multi-bit depth halftone amplitude-modulation dots. The method may comprise: scanning an input image to obtain a value of a current pixel Pxy, where x represents a lateral position index of the current pixel, and y represents a vertical position index of the current pixel; obtaining gj from a preset multi-bit depth threshold matrix G by starting with i=0, and determining if Pxy
Abstract:
Methods and devices are provided for fabricating a semiconductor device having barrier regions within regions of insulating material resulting in outgassing paths from the regions of insulating material. A method comprises forming a barrier region within an insulating material proximate the isolated region of semiconductor material and forming a gate structure overlying the isolated region of semiconductor material. The barrier region is adjacent to the isolated region of semiconductor material, resulting in an outgassing path within the insulating material.