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    OPTICAL SYSTEMS AND METHODS OF CHARACTERIZING HIGH-K DIELECTRICS
    83.
    发明申请
    OPTICAL SYSTEMS AND METHODS OF CHARACTERIZING HIGH-K DIELECTRICS 审中-公开
    光学系统和表征高K电介质的方法

    公开(公告)号：US20170067830A1

    公开(公告)日：2017-03-09

    申请号：US15256442

    申请日：2016-09-02

    Applicant: California Institute of Technology

    Inventor： Philippe C. Adell ,  Harry A. Atwater

    IPC: G01N21/64 ,  G01N21/88 ,  G01N21/95

    CPC classification number: G01N21/6489 ,  G01N21/636 ,  G01N21/8851 ,  G01N21/9501 ,  G01N21/9505 ,  G01R31/2648 ,  G01R31/2656 ,  H01L22/12 ,  H01L29/42364 ,  H01L29/513 ,  H01L29/517

    Abstract: The disclosed technology generally relates to characterization of semiconductor structures, and more particularly to optical characterization of high-k dielectric materials. A method includes providing a semiconductor structure comprising a semiconductor and a high-k dielectric layer formed over the semiconductor, wherein the dielectric layer has electron traps formed therein. The method additionally includes at least partially transmitting an incident light having an incident energy through the high-k dielectric layer and at least partially absorbing the incident light in the semiconductor. The method additionally includes measuring a nonlinear optical spectrum resulting from the light having the energy different from the incident energy, the nonlinear optical spectrum having a first region and a second region, wherein the first region changes at a different rate in intensity compared to the second region. The method further includes determining from the nonlinear optical spectrum one or both of a first time constant from the first region and a second time constant from the second region, and determining a trap density in the high-k dielectric layer based on the one or both of the first time constant and the second time constant.

    Abstract translation: 所公开的技术通常涉及半导体结构的表征，更具体地涉及高k电介质材料的光学表征。 一种方法包括提供包括在半导体上形成的半导体和高k电介质层的半导体结构，其中介电层在其中形成有电子阱。 该方法还包括至少部分地透射具有入射能量的入射光穿过高k电介质层并且至少部分地吸收半导体中的入射光。 该方法还包括测量由具有与入射能量不同的能量的光产生的非线性光谱，非线性光谱具有第一区域和第二区域，其中第一区域以与第二区域不同的强度速率变化 地区。 该方法还包括从非线性光谱确定来自第一区域的第一时间常数和来自第二区域的第二时间常数之一或两者，以及基于该一个或两个方法确定高k电介质层中的陷阱密度 的第一时间常数和第二时间常数。

    Mirrors Transparent to Specific Regions of the Electromagnetic Spectrum
    84.
    发明申请
    Mirrors Transparent to Specific Regions of the Electromagnetic Spectrum 审中-公开
    反射镜对电磁谱的特定区域是透明的

    公开(公告)号：US20170025992A1

    公开(公告)日：2017-01-26

    申请号：US15217690

    申请日：2016-07-22

    Applicant: California Institute of Technology

    Inventor： Harry A. Atwater ,  Sergio Pellegrino ,  Seyed Ali Hajimiri ,  Emily C. Warmann

    IPC: H02S40/22 ,  B64G1/10 ,  B64G1/44

    CPC classification number: H02S40/22 ,  B64G1/1085 ,  B64G1/401 ,  B64G1/403 ,  B64G1/405 ,  B64G1/406 ,  B64G1/407 ,  B64G1/428 ,  B64G1/443 ,  B64G1/66 ,  H01L31/0547 ,  H02S10/00 ,  H02S30/20 ,  Y02E10/52

    Abstract: Systems and methods in accordance with various embodiments of the invention implement mirrors that are more transparent to specific regions of the electromagnetic spectrum (e.g. the microwave region of the electromagnetic spectrum) relative to conventional metallic mirrors (e.g. mirrors made form aluminum or silver). In one embodiment, a space-based solar power system includes: a photovoltaic material; and a mirror that is—relative to a 10 μm thick sheet of aluminum—more transparent to at least one of a substantial portion of the microwave region of the electromagnetic spectrum and a substantial portion of the radio wave region of the electromagnetic spectrum; where the mirror is configured to focus incident visible light onto the photovoltaic material.

    Abstract translation: 根据本发明的各种实施例的系统和方法相对于传统的金属反射镜（例如由铝或银制成的反射镜）实现对电磁谱的特定区域（例如电磁光谱的微波区域）更透明的反射镜。 在一个实施例中，空间太阳能发电系统包括：光伏材料; 以及相对于对电磁光谱的微波区域的主要部分和电磁光谱的无线电波区域的主要部分中的至少一个更透明的10μm厚的铝片的镜子; 其中镜被配置为将入射的可见光聚焦到光伏材料上。

    PHOTOVOLTAIC DEVICES INCORPORATING THIN CHALCOGENIDE FILM ELECTRICALLY INTERPOSED BETWEEN PNICTIDE-CONTAINING ABSORBER LAYER AND EMITTER LAYER
    86.
    发明申请
    PHOTOVOLTAIC DEVICES INCORPORATING THIN CHALCOGENIDE FILM ELECTRICALLY INTERPOSED BETWEEN PNICTIDE-CONTAINING ABSORBER LAYER AND EMITTER LAYER 审中-公开
    包含含PNICTIDE的吸收层和发射层之间的电化学膜的薄膜电容器的光伏器件

    公开(公告)号：US20150255637A1

    公开(公告)日：2015-09-10

    申请号：US14433221

    申请日：2013-10-07

    Applicant: DOW GLOBAL TECHNOLOGIES LLC ,  CALIFORNIA INSTITUTE OF TECHNOLOGY

    Inventor： Jeffrey P. Bosco ,  Rebekah K. Feist ,  Harry A. Atwater ,  Marty W. Degroot ,  James C. Stevens ,  Gregory M. Kimball

    IPC: H01L31/0296 ,  H01L31/032 ,  H01L31/18 ,  H01L31/072

    CPC classification number: H01L31/0296 ,  H01L31/032 ,  H01L31/062 ,  H01L31/07 ,  H01L31/072 ,  H01L31/1085 ,  H01L31/109 ,  H01L31/1828 ,  Y02E10/50

    Abstract: The present invention provides strategies for improving the quality of the insulating layer in MIS and SIS devices in which the insulator layer interfaces with at least one pnictide-containing film The principles of the present invention are based at least in part on the discovery that very thin (20 nm or less) insulating films comprising a chalcogenide such as i-ZnS are surprisingly superior tunnel barriers in MIS and SIS devices incorporating pnictide semiconductors. In one aspect, the present invention relates to a photovoltaic device, comprising: a semiconductor region comprising at least one pnictide semiconductor; an insulating region electrically coupled to the semiconductor region, wherein the insulating region comprises at least one chalcogenide and has a thickness in the range from 0.5 nm to 20 nm; and a rectifying region electrically coupled to the semiconductor region in a manner such that the insulating region is electrically interposed between the collector region and the semiconductor region.

    Abstract translation: 本发明提供了改善MIS和SIS器件中的绝缘层的质量的策略，其中绝缘体层与至少一个含有pnictide的膜相接触。本发明的原理至少部分地基于以下发现：非常薄 （20nm以下）包含硫族化物如i-ZnS的绝缘膜在MIS和SIS器件中具有令人惊奇的优越的隧道势垒，其包含pnictide半导体。 一方面，本发明涉及一种光伏器件，包括：包含至少一个半导体的半导体区域; 绝缘区域，其电耦合到所述半导体区域，其中所述绝缘区域包括至少一个硫族化物，并且具有在0.5nm至20nm范围内的厚度; 以及整流区域，其以这样的方式电耦合到所述半导体区域，使得所述绝缘区域电插入在所述集电极区域和所述半导体区域之间。

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