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    Active matrix organic light emitting device with MO TFT backplane
    81.
    发明授权
    Active matrix organic light emitting device with MO TFT backplane 有权
    有源矩阵有机发光器件，具有MO TFT背板

    公开(公告)号：US07977868B2

    公开(公告)日：2011-07-12

    申请号：US12178209

    申请日：2008-07-23

    申请人： Chan-Long Shieh ,  Gang Yu

    发明人： Chan-Long Shieh ,  Gang Yu

    IPC分类号： H01J1/62 ,  H01J63/04 ,  H01J9/24

    CPC分类号： H01L27/322 ,  H01L27/3244

    摘要： A full-color active matrix organic light emitting display including a transparent substrate, a color filter positioned on an upper surface of the substrate, a spacer layer formed on the upper surface of the color filter, a metal oxide thin film transistor backpanel formed on the spacer layer and defining an array of pixels, and an array of single color, organic light emitting devices formed on the backpanel and positioned to emit light downwardly through the backpanel, the spacer layer, the color filter, and the substrate in a full-color display.

    摘要翻译： 一种全色有源矩阵有机发光显示器，包括透明基板，位于基板上表面的滤色器，形成在滤色器上表面上的间隔层，金属氧化物薄膜晶体管背板 间隔层和限定像素阵列，以及形成在背板上的单色有机发光器件的阵列，并被定位成以全色的方式通过背板，间隔层，滤色器和衬底向下发光。 显示。

    Double self-aligned metal oxide TFT
    82.
    发明授权
    Double self-aligned metal oxide TFT 有权
    双自对准金属氧化物TFT

    公开(公告)号：US07977151B2

    公开(公告)日：2011-07-12

    申请号：US12427200

    申请日：2009-04-21

    申请人： Chan-Long Shieh ,  Gang Yu

    发明人： Chan-Long Shieh ,  Gang Yu

    IPC分类号： H01L21/00

    CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/66969

    摘要： A method of fabricating metal oxide TFTs on transparent substrates includes the steps of positioning an opaque gate metal area on the front surface of the substrate, depositing transparent gate dielectric and transparent metal oxide semiconductor layers overlying the gate metal and a surrounding area, depositing transparent passivation material on the semiconductor material, depositing photoresist on the passivation material, exposing and developing the photoresist to remove exposed portions, etching the passivation material to leave a passivation area defining a channel area, depositing transparent conductive material over the passivation area, depositing photoresist over the conductive material, exposing and developing the photoresist to remove unexposed portions, and etching the conductive material to leave source and drain areas on opposed sides of the channel area.

    摘要翻译： 在透明基板上制造金属氧化物TFT的方法包括以下步骤：在衬底的前表面上定位不透明栅极金属区域，沉积覆盖栅极金属和周围区域的透明栅极电介质和透明金属氧化物半导体层，沉积透明钝化 在所述半导体材料上沉积光致抗蚀剂，在所述钝化材料上沉积光致抗蚀剂，曝光和显影所述光致抗蚀剂以去除暴露部分，蚀刻所述钝化材料以留下限定沟道区的钝化区，在所述钝化区上沉积透明导电材料， 导电材料，曝光和显影光致抗蚀剂以去除未曝光部分，并且蚀刻导电材料以在沟道区域的相对侧上留下源极和漏极区域。

    MASK LEVEL REDUCTION FOR MOFET
    83.
    发明申请
    MASK LEVEL REDUCTION FOR MOFET 有权
    屏蔽层减少MOFET

    公开(公告)号：US20110104841A1

    公开(公告)日：2011-05-05

    申请号：US12612123

    申请日：2009-11-04

    申请人： Chan-Long Shieh ,  Fatt Foong ,  Gang Yu

    发明人： Chan-Long Shieh ,  Fatt Foong ,  Gang Yu

    IPC分类号： H01L21/8234 ,  H01L21/8254 ,  H01L33/00

    CPC分类号： H01L27/1288 ,  H01L27/1214 ,  H01L27/1225 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/7869

    摘要： A method of fabricating a thin film transistor for an active matrix display using reduced masking operations includes patterning a gate on a substrate. A gate dielectric is formed over the gate and a semiconducting metal oxide is deposited on the gate dielectric. A channel protection layer is patterned on the semiconducting metal oxide overlying the gate to define a channel area and to expose the remaining semiconducting metal oxide. A source/drain metal layer is deposited on the structure and etched through to the channel protection layer above the gate to separate the source/drain metal layer into source and drain terminals and the source/drain metal layer and the semiconducting metal oxide are etched through at the periphery to isolate the transistor. A nonconductive spacer is patterned on the transistor and portions of the surrounding source/drain metal layer.

    摘要翻译： 使用减少的掩模操作制造用于有源矩阵显示器的薄膜晶体管的方法包括在衬底上图形化栅极。 在栅极上形成栅极电介质，并且在栅极电介质上沉积半导体金属氧化物。 将通道保护层图案化在覆盖栅极的半导体金属氧化物上，以限定通道区域并露出剩余的半导体金属氧化物。 源极/漏极金属层沉积在结构上并蚀刻到栅极上方的沟道保护层，以将源极/漏极金属层分离成源极和漏极端子，并且源/漏极金属层和半导体金属氧化物被蚀刻通过 在外围隔离晶体管。 在晶体管和周围源极/漏极金属层的部分上构图非导电间隔物。

    LASER ANNEALING OF METAL OXIDE SEMICONDUCTOR ON TEMPERATURE SENSITIVE SUBSTRATE FORMATIONS
    84.
    发明申请
    LASER ANNEALING OF METAL OXIDE SEMICONDUCTOR ON TEMPERATURE SENSITIVE SUBSTRATE FORMATIONS 有权
    金属氧化物半导体在温度敏感基板上的激光退火

    公开(公告)号：US20110062431A1

    公开(公告)日：2011-03-17

    申请号：US12874145

    申请日：2010-09-01

    申请人： Chan-Long Shieh ,  Hsing-Chung Lee

    发明人： Chan-Long Shieh ,  Hsing-Chung Lee

    IPC分类号： H01L29/786 ,  H01L21/34

    CPC分类号： H01L21/268 ,  H01L29/66969 ,  H01L29/78603 ,  H01L29/78693

    摘要： A method of annealing a metal oxide on a temperature sensitive substrate formation includes the steps of providing a temperature sensitive substrate formation and forming a spacer layer on a surface of the substrate formation. A metal oxide semiconductor device is formed on the spacer layer, the device includes at least a layer of amorphous metal oxide semiconductor material, an interface of the amorphous metal oxide layer with a dielectric layer, and a gate metal layer adjacent the layer of amorphous metal oxide semiconductor material and the interface. The method then includes the step of at least partially annealing the layer of metal oxide semiconductor material by heating the adjacent gate metal layer with pulses of infra red radiation to improve the mobility and operating stability of the amorphous metal oxide semiconductor material while retaining at least the amorphous metal oxide semiconductor material adjacent the gate metal layer amorphous.

    摘要翻译： 在温度敏感的基板形成上退火金属氧化物的方法包括以下步骤：在基板结构的表面上形成温度敏感的基板并形成间隔层。 金属氧化物半导体器件形成在间隔层上，该器件至少包括一层非晶金属氧化物半导体材料，非晶金属氧化物层与电介质层的界面，以及与非晶金属层相邻的栅极金属层 氧化物半导体材料和界面。 该方法然后包括通过用红外辐射脉冲加热相邻栅极金属层来至少部分地退火金属氧化物半导体材料层的步骤，以提高非晶金属氧化物半导体材料的迁移率和操作稳定性，同时至少保留 非晶态金属氧化物半导体材料与栅极金属层相邻无定形。

    DOUBLE SELF-ALIGNED METAL OXIDE TFT
    85.
    发明申请
    DOUBLE SELF-ALIGNED METAL OXIDE TFT 有权
    双重自对准金属氧化物TFT

    公开(公告)号：US20100267197A1

    公开(公告)日：2010-10-21

    申请号：US12427200

    申请日：2009-04-21

    申请人： Chan-Long Shieh ,  Gang Yu

    发明人： Chan-Long Shieh ,  Gang Yu

    IPC分类号： H01L21/36

    CPC分类号： H01L29/7869 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/66969

    摘要： A method of fabricating metal oxide TFTs on transparent substrates includes the steps of positioning an opaque gate metal area on the front surface of the substrate, depositing transparent gate dielectric and transparent metal oxide semiconductor layers overlying the gate metal and a surrounding area, depositing transparent passivation material on the semiconductor material, depositing photoresist on the passivation material, exposing and developing the photoresist to remove exposed portions, etching the passivation material to leave a passivation area defining a channel area, depositing transparent conductive material over the passivation area, depositing photoresist over the conductive material, exposing and developing the photoresist to remove unexposed portions, and etching the conductive material to leave source and drain areas on opposed sides of the channel area.

    摘要翻译： 在透明基板上制造金属氧化物TFT的方法包括以下步骤：在衬底的前表面上定位不透明栅极金属区域，沉积覆盖栅极金属和周围区域的透明栅极电介质和透明金属氧化物半导体层，沉积透明钝化 在所述半导体材料上沉积光致抗蚀剂，在所述钝化材料上沉积光致抗蚀剂，曝光和显影所述光致抗蚀剂以去除暴露部分，蚀刻所述钝化材料以留下限定沟道区的钝化区，在所述钝化区上沉积透明导电材料， 导电材料，曝光和显影光致抗蚀剂以去除未曝光部分，并且蚀刻导电材料以在沟道区域的相对侧上留下源极和漏极区域。

    Method of fabricating long-wavelength VCSEL and apparatus
    88.
    发明授权
    Method of fabricating long-wavelength VCSEL and apparatus 失效
    制造长波长VCSEL和设备的方法

    公开(公告)号：US06628685B1

    公开(公告)日：2003-09-30

    申请号：US09642359

    申请日：2000-08-21

    申请人： Chan-Long Shieh

    发明人： Chan-Long Shieh

    IPC分类号： H01S5187

    CPC分类号： B82Y20/00 ,  H01S5/02461 ,  H01S5/02476 ,  H01S5/041 ,  H01S5/18361 ,  H01S5/34306

    摘要： A long-wavelength VCSEL, and method of fabrication, includes a long-wavelength active region epitaxially grown on a compatible substrate with a high heat conductivity DBR mirror stack metamorphically grown on the active region. A supporting substrate is bonded to the DBR mirror stack and the compatible substrate is removed. A second mirror stack, either a DBR or a dielectric mirror stack, is formed on the opposite surface of the active region. Preferably, an InP based active region is grown on an InP based substrate and an AlAs/GaAs based metamorphic DBR mirror stack is metamorphically grown on the active region. The supporting substrate may be either an InP based substrate bonded to the active region or a layer of plated metal, such as copper, silver, gold, nickel, aluminum, etc.

    摘要翻译： 长波长VCSEL和制造方法包括在兼容衬底上外延生长的长波长有源区域，其具有在活性区域上变质生长的高热导率DBR反射镜堆叠。 支撑衬底被结合到DBR反射镜堆叠并且去除相容的衬底。 在活性区域的相对表面上形成第二反射镜叠层，DBR或介电镜叠层。 优选地，基于InP的衬底上生长基于InP的有源区，并且在有源区上变质地生长AlAs / GaAs基变质DBR镜叠层。 支撑衬底可以是与活性区域结合的基于InP的衬底或镀覆金属的层，例如铜，银，金，镍，铝等。

    Electrically pumped long-wavelength VCSEL and methods of fabrication
    89.
    发明授权
    Electrically pumped long-wavelength VCSEL and methods of fabrication 失效
    电泵浦长波长VCSEL和制造方法

    公开(公告)号：US06542530B1

    公开(公告)日：2003-04-01

    申请号：US09699111

    申请日：2000-10-27

    申请人： Chan-Long Shieh ,  Jeff Tsao

    发明人： Chan-Long Shieh ,  Jeff Tsao

    IPC分类号： H01S5187

    CPC分类号： H01S5/1833 ,  H01S5/0207 ,  H01S5/0217 ,  H01S5/02461 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18341 ,  H01S5/18369 ,  H01S2301/176

    摘要： An electrically pumped, long-wavelength VCSEL includes a long wavelength active region having electrical contacts on opposed sides thereof. A layer of semiconductor material is included in the active region having an electrically conductive portion defining a lasing aperture and current confinement volume with the conductive portion being limited by an electrically insulating portion. Windows are formed in the electrical contacts in alignment with the lasing aperture and mirror stacks are positioned on the long wavelength active region in each of the windows. At least one of the mirror stacks includes a metamorphic distributed Bragg reflector for heat conduction.

    摘要翻译： 电泵浦的长波长VCSEL包括在其相对侧上具有电触头的长波长有源区。 在有源区域中包括一层半导体材料，该区域具有限定激光开口孔和电流限制体积的导电部分，导电部分由电绝缘部分限制。 窗口形成在与触发孔对准的电触点中，并且反射镜叠层位于每个窗口中的长波长有效区域上。 至少一个镜子堆叠包括用于热传导的变质分布布拉格反射器。

    Vertical cavity surface emitting laser semiconductor chip with integrated drivers and photodetectors and method of fabrication
    90.
    发明授权
    Vertical cavity surface emitting laser semiconductor chip with integrated drivers and photodetectors and method of fabrication 失效
    具有集成驱动器和光电探测器的垂直腔表面发射激光半导体芯片及其制造方法

    公开(公告)号：US6097748A

    公开(公告)日：2000-08-01

    申请号：US80152

    申请日：1998-05-18

    申请人： Rong-Ting Huang ,  Chan-Long Shieh ,  Michael S. Lebby

    发明人： Rong-Ting Huang ,  Chan-Long Shieh ,  Michael S. Lebby

    IPC分类号： H01S5/026 ,  H01S5/183 ,  H01S3/19

    CPC分类号： H01S5/0262 ,  H01S5/0261 ,  H01S5/0264 ,  H01S5/183

    摘要： A vertical cavity surface emitting laser semiconductor chip including a vertical cavity surface emitting laser (VCSEL) formed on a substrate, a photodetector, integrated with the vertical cavity surface emitting laser for automatic power control (APC) of the vertical cavity surface emitting laser and a driver circuit, integrated with the vertical cavity surface emitting laser and the photodetector. The VCSEL, photodetector and driver circuit are integrated by utilizing a monolithic polysilicon layer. The driver circuit is characterized as a CMOS driver circuit, capable of receiving feedback from the photodetector and adjusting the output power of the vertical cavity surface emitting laser in response to the feedback, thus achieving APC of the VCSEL.

    摘要翻译： 一种垂直腔表面发射激光半导体芯片，包括形成在衬底上的垂直腔表面发射激光器（VCSEL），与用于垂直腔表面发射激光器的自动功率控制（APC）的垂直腔表面发射激光器集成的光电检测器， 驱动电路，与垂直腔表面发射激光器和光电检测器集成。 VCSEL，光电检测器和驱动电路通过利用单片多晶硅层进行集成。 驱动器电路的特征在于CMOS驱动电路，其能够接收来自光电检测器的反馈并且响应于反馈调整垂直腔表面发射激光器的输出功率，从而实现VCSEL的APC。