公开(公告)号：US6148012A

公开(公告)日：2000-11-14

申请号：US176527

申请日：1998-10-21

申请人： Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Alessandro Tredicucci

发明人： Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Alessandro Tredicucci

IPC分类号： H01L33/00 ,  H01S5/34 ,  H01S5/343 ,  H01S5/00 ,  H01S3/10

CPC分类号： B82Y20/00 ,  H01S5/3402

摘要： A multiple wavelength quantum cascade (QC) superlattice (SL) light source has at least three energy levels in each radiative transition (RT) region, and electron transitions between the levels give rise to emission lines at different wavelengths. In one embodiment, a lower miniband has at least a first energy level and an upper miniband has at least third and fourth energy levels. In another embodiment, the lower miniband has first and second energy levels. In both cases, electron transitions between a first pair of the upper and lower levels generates light at a first spontaneous emission line having a center wavelength .lambda..sub.1 and a line broadening first energy, and electron transitions between a second pair of the upper and lower levels generates light at a second spontaneous emission line having a center wavelength .lambda..sub.2 and a line broadening second energy. The energy separation of the center wavelengths is greater than the larger of the first and second line broadening energies, and means are provided for inhibiting the relaxation of electrons from the fourth level to said third level. In a preferred embodiment, which is particularly suited to lasers made from Group III-V compound semiconductors, the inhibiting means hinders the emission of optical phonons. One way to inhibit these phonons is to make the energy separation of the upper levels less than the energy of an optical phonon in the active region.

摘要翻译： 多波长量子级联（QC）超晶格（SL）光源在每个辐射跃迁（RT）区域中具有至少三个能级，并且电平之间的电子跃迁产生不同波长的发射线。 在一个实施例中，较低的迷你巴具有至少第一能级，而上部迷你宝具有至少第三和第四能级。 在另一个实施例中，较低的迷你巴具有第一和第二能级。 在这两种情况下，第一对上层和下层之间的电子跃迁在具有中心波长λ1的第一自发发射线和增宽第一能量的线上产生光，并且第二对上和下层之间的电子跃迁 在具有中心波长λ2的第二自发发射线和增加第二能量的线上产生光。 中心波长的能量分离大于第一和第二线宽增加能的较大者，并且提供了用于抑制电子从第四级到所述第三级松弛的装置。 在特别适用于由III-V族化合物半导体制成的激光器的优选实施例中，抑制装置阻碍光学声子的发射。 抑制这些声子的一种方法是使上层的能量分离小于活性区域中的光学声子的能量。

公开(公告)号：US6144681A

公开(公告)日：2000-11-07

申请号：US033250

申请日：1998-03-02

申请人： Federico Capasso ,  Alfred Yi Cho ,  Jerome Faist ,  Albert Lee Hutchinson ,  Carlo Sirtori ,  Deborah Lee Sivco ,  Alessandro Tredicucci

发明人： Federico Capasso ,  Alfred Yi Cho ,  Jerome Faist ,  Albert Lee Hutchinson ,  Carlo Sirtori ,  Deborah Lee Sivco ,  Alessandro Tredicucci

IPC分类号： H01L33/06 ,  H01S5/00 ,  H01S5/34 ,  H01S3/19

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01S5/3402 ,  H01S5/1096

摘要： The quantum cascade (QC) photon source according to this invention can emit simultaneously at two distinct wavelengths, typically both in the mid-infrared. This is accomplished through provision of a semiconductor layer structure in which, at the proper bias voltage, electrons are injected into an energy level E.sub.3 and then forced to cascade through an intermediate level E.sub.2 before reaching the ground state E.sub.1 of the active region. In the process, photons of energy E.sub.3 -E.sub.2 (wavelength .lambda..sub.1) and E.sub.2 -E.sub.1 (wavelength .lambda..sub.2) are emitted. Dual wavelength photon sources according to this invention can be used in a variety of ways, e.g., to determine the absorption of a gaseous sample at wavelengths .lambda..sub.1 and .lambda..sub.2, exemplarily to determine the concentration of a particular chemical compound in the sample.

摘要翻译： 根据本发明的量子级联（QC）光子源可以以两个不同的波长同时发射，通常在中红外。 这是通过提供半导体层结构来实现的，其中在适当的偏置电压下，电子被注入到能级E3中，然后在到达有源区的基态E1之前强制级联通过中间电平E2。 在该过程中，发射能量为E3-E2（波长λ1）和E2-E1（波长λ2）的光子。 根据本发明的双波长光子源可以以多种方式使用，例如确定波长λ1和λ2处的气体样品的吸收，例如用于确定样品中特定化合物的浓度。

公开(公告)号：US6137817A

公开(公告)日：2000-10-24

申请号：US96701

申请日：1998-06-12

申请人： James Nelson Baillargeon ,  Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Alessandro Tredicucci

发明人： James Nelson Baillargeon ,  Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Albert Lee Hutchinson ,  Deborah Lee Sivco ,  Alessandro Tredicucci

IPC分类号： H01S5/00 ,  H01S5/34 ,  H01S5/343

CPC分类号： B82Y20/00 ,  H01S5/3402

摘要： A novel quantum cascade (QC) laser comprises a multiplicity of identical repeat units, with each repeat unit comprising an active region and an injector region. The injector region comprises quantum wells and barriers, selected to facilitate, under appropriate bias, resonant carrier transport from a lower energy level of a given active region to an upper energy level of an adjacent downstream active region. Carrier transition from the upper energy level to a lower energy level of an active region results in emission of infrared radiation. The laser is advantageously used in, e.g., a measurement system for detection of trace compounds in air.

摘要翻译： 新型量子级联（QC）激光器包括多个相同的重复单元，每个重复单元包括有源区和注入区。 喷射器区域包括量子阱和阻挡层，其被选择为有助于在适当的偏置下促进谐振载流子从给定有源区域的较低能量水平传输到相邻下游有源区域的较高能级。 从有功区域的较高能量级到较低能级的载波转变导致红外辐射的发射。 该激光器有利地用于例如用于检测空气中微量化合物的测量系统。

公开(公告)号：US6055257A

公开(公告)日：2000-04-25

申请号：US67086

申请日：1998-04-27

申请人： James Nelson Baillargeon ,  Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Deborah Lee Sivco ,  Mattias Beck ,  Jerome Faist

发明人： James Nelson Baillargeon ,  Federico Capasso ,  Alfred Yi Cho ,  Claire F. Gmachl ,  Deborah Lee Sivco ,  Mattias Beck ,  Jerome Faist

IPC分类号： H01S5/34 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/3402

摘要： A QC laser comprises first and second optical confinement (i.e., cladding) regions, and an In-based, Group III-V compound, QC active region disposed between the confinement regions. At least the first confinement region and the active region having the shape of an elongated mesa. An i-type InP layer covers the sidewalls to provide efficient heat transport and effective low loss mode confinement. A metal layer makes ohmic contact with the top surface of the mesa and a rectifying contact with the i-InP layer.

摘要翻译： QC激光器包括布置在约束区域之间的第一和第二光限制（即包层）区域和基于In的III-V族化合物QC活性区域。 至少第一限制区域和活动区域具有细长台面的形状。 i型InP层覆盖侧壁以提供有效的热传输和有效的低损耗模式限制。 金属层与台面的顶面形成欧姆接触，并与i-InP层整流接触。

公开(公告)号：US5936989A

公开(公告)日：1999-08-10

申请号：US841059

申请日：1997-04-29

申请人： Federico Capasso ,  Alfred Yi Cho ,  Jerome Faist ,  Albert Lee Hutchinson ,  Gaetano Scamarcio ,  Carlo Sirtori ,  Deborah Lee Sivco

发明人： Federico Capasso ,  Alfred Yi Cho ,  Jerome Faist ,  Albert Lee Hutchinson ,  Gaetano Scamarcio ,  Carlo Sirtori ,  Deborah Lee Sivco

IPC分类号： H01S5/34 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/3402 ,  H01S5/34306 ,  H01S5/34313

摘要： The core of the disclosed novel quantum cascade (QC) laser comprises a multiplicity of nominally identical repeat units, with a given repeat unit comprising a superlattice active region and a carrier injector region. Associated with the superlattice active region is an upper and a lower energy miniband, with the lasing transition being the transition from the lower edge of the upper miniband to the upper edge of the lower miniband. The injector facilitates carrier transport from the lower miniband to the upper miniband of the adjacent downstream repeat unit. QC lasers according to this invention can be designed to emit in the infrared, e.g., in the wavelength region 3-15 .mu.m, and can have high power.

摘要翻译： 公开的新颖量子级联（QC）激光器的核心包括多个名义上相同的重复单元，其中给定的重复单元包括超晶格有源区和载流子注入区。 与超晶格有源区相关联的是上能和下能量的迷你波导，其中激光跃迁是从上微型小型飞机的下边缘到下部小型飞机的上边缘的过渡。 注射器便于载体从相邻的下游重复单元的下部微型飞行器到上部小型飞机传送。 根据本发明的QC激光器可以设计成在红外线中发射，例如在3-15μm的波长区域中，并且可以具有高功率。

公开(公告)号：US5727010A

公开(公告)日：1998-03-10

申请号：US618886

申请日：1996-03-20

申请人： Federico Capasso ,  Alfred Yi Cho ,  Jerome Faist ,  Albert Lee Hutchinson ,  Carlo Sirtori ,  Deborah Lee Sivco

发明人： Federico Capasso ,  Alfred Yi Cho ,  Jerome Faist ,  Albert Lee Hutchinson ,  Carlo Sirtori ,  Deborah Lee Sivco

IPC分类号： H01S5/00 ,  H01S5/34 ,  H01S3/19 ,  H01S3/18

CPC分类号： B82Y20/00 ,  H01S5/3402

摘要： The disclosed improved quantum cascade (QC) laser comprises features that facilitate lasing at temperatures above 260 K, preferably above 300 K. Among the features is a wavefunction-increasing feature that enhances the amplitude of the lasing level wavefunction in the adjacent upstream barrier layer, thereby increasing carrier injection efficiency into the lasing level. Exemplarily, the wavefunction-increasing feature is an approximately disposed thin quantum well. Among the features typically is also a chirped superlattice in the injection/relaxation region that acts as a Bragg reflector to suppress escape of carriers from the lasing level in the continuum, while facilitating carrier extraction from the ground state into a miniband, with the energy width of the miniband decreasing over at least a portion of the thickness of the injection/relaxation region.

摘要翻译： 所公开的改进的量子级联（QC）激光器包括在260K以上，优选高于300K的温度下促进激光的特征。其特征在于增加相邻上游阻挡层中激光电平波函数的幅度的波函数增加特征， 从而将载体注入效率提高到激光级。 示例性地，波函数增加特征是大致布置的薄量子阱。 其中的特征通常也是注入/弛豫区域中的啁啾超晶格，其作为布拉格反射器，以抑制载流子从连续体中的激光闪烁级别的逸出，同时促进载体从基态提取到微型计算机中，其能量宽度 的最小值在注入/松弛区域的厚度的至少一部分上减小。

公开(公告)号：US4853753A

公开(公告)日：1989-08-01

申请号：US117583

申请日：1987-11-05

申请人： Federico Capasso ,  Alfred Y. Cho ,  Susanta Sen

发明人： Federico Capasso ,  Alfred Y. Cho ,  Susanta Sen

IPC分类号： G11C11/38 ,  G11C11/56 ,  H01L27/10 ,  H01L29/76 ,  H01L29/80 ,  H01L29/88 ,  H03B19/16

CPC分类号： B82Y10/00 ,  G11C11/38 ,  G11C11/56 ,  H01L29/7606 ,  H01L29/882 ,  H03B19/16 ,  G11C2211/5614 ,  Y10S257/926

摘要： A semiconductor integrated resonant-tunneling device having multiple negative-resistance regions, and having essentially equal current peaks in such regions, is useful as a highly compact element, e.g., in apparatus designed for ternary logic operations, frequency multiplication, waveform scrambling, memory operation, parity-bit generation, and coaxial-line driving. The device can be made by layer deposition on a substrate and includes a resonant-tunneling structure between contacts such that side-by-side first and third contacts are on one side, and a second contact is on the opposite side of the resonant-tunneling structure. Disclosed further are (two-terminal) resonant-tunneling diodes as incorporated in memory devices, e.g., in lieu of 2-transistsor flip-flops; room-temperature device operation; and devices comprising an essentially undoped accelerator region between an emitter contact and a resonant-tunneling structure.

摘要翻译： 具有多个负电阻区域并且在这些区域中具有基本相等的电流峰值的半导体集成谐振隧道装置可用作高度紧凑的元件，例如在设计用于三元逻辑运算，倍频，波形加扰，存储器操作 奇偶校验位产生和同轴线驱动。 该器件可以通过在衬底上的层沉积制成，并且包括在触点之间的谐振隧穿结构，使得并排的第一和第三触点在一侧，并且第二触点位于谐振隧道的相反侧 结构体。 还公开了（二端）谐振隧道二极管，如并入存储器件中，例如代替2-转移触发器; 室温装置操作; 以及包括在发射极接触和谐振隧道结构之间的基本上未掺杂的加速器区域的器件。

公开(公告)号：US4849799A

公开(公告)日：1989-07-18

申请号：US897378

申请日：1986-08-18

申请人： Federico Capasso ,  Harry T. French ,  Arthur C. Gossard ,  Albert L. Hutchinson ,  Richard A. Kiehl ,  Sustana Sen

发明人： Federico Capasso ,  Harry T. French ,  Arthur C. Gossard ,  Albert L. Hutchinson ,  Richard A. Kiehl ,  Sustana Sen

IPC分类号： H01L29/73 ,  H01L29/737

CPC分类号： B82Y10/00 ,  H01L29/7311 ,  H01L29/7376

摘要： A resonant-tunneling, heterostructure bipolar transistor having a quantum well between emitter contact and collector region is described. In one embodiment, a compositionally graded portion of the emitter region is adjacent to the base region, and there is a double barrier in the base region. In another embodiment the quantum well is defined by the emitter and a potential barrier in the base region. Further embodiments have a quantum well between emitter and collector regions or else within the emitter region.

摘要翻译： 描述了在发射极接触和集电极区域之间具有量子阱的共振隧穿，异质结双极晶体管。 在一个实施例中，发射极区域的组成渐变部分与基极区域相邻，并且在基极区域中存在双重屏障。 在另一个实施例中，量子阱由基极区域中的发射极和势垒限定。 另外的实施例在发射极和集电极区之间或在发射极区内具有量子阱。

公开(公告)号：US4486765A

公开(公告)日：1984-12-04

申请号：US389908

申请日：1982-06-18

申请人： Federico Capasso

发明人： Federico Capasso

IPC分类号： H01L31/0352 ,  H01L31/107 ,  H01L31/109 ,  H01L29/90

CPC分类号： H01L31/1075 ,  H01L31/035281 ,  H01L31/109 ,  Y02E10/50

摘要： The invention is a reduced noise avalanche photodetector in which the energy band structure causes one type of charge carrier to ionize at a faster rate than the other type of charge carrier.In a preferred embodiment the inventive structure comprises a relatively narrow bandgap semiconductor layer of a first conductivity type located contiguous with and between two relatively wider bandgap layers of a second conductivity type. Means are provided for applying an electric field parallel to the plane of the layers.In a preferred mode of operation, light is absorbed in the narrow bandgap layer and charge carriers are generated in response thereto. One type of charge carrier is confined to the narrow bandgap layer and undergoes avalanche multiplication therein in a direction parallel to the applied field. The other type of charge carrier is swept out into the wider bandgap layers where avalanche multiplication takes place at a negligible rate.

摘要翻译： 本发明是一种减少噪声的雪崩光电检测器，其中能带结构使得一种类型的电荷载体以比另一种类型的电荷载体更快的速率离子化。 在优选实施例中，本发明的结构包括位于第二导电类型的两个相对较宽的带隙层之间并且位于第二导电类型的相对较窄的带隙半导体层。 提供了用于施加平行于层的平面的电场的装置。 在优选的操作模式中，光在窄带隙层中被吸收，响应于此产生电荷载流子。 一种类型的电荷载体被限制在窄带隙层，并且在平行于施加场的方向上经历雪崩倍增。 另一种类型的电荷载体被扫描到更宽的带隙层中，其中雪崩倍增以可忽略的速率发生。

公开(公告)号：US4390889A

公开(公告)日：1983-06-28

申请号：US195333

申请日：1980-10-09

申请人： Federico Capasso ,  Albert L. Hutchinson ,  Ralph A. Logan

发明人： Federico Capasso ,  Albert L. Hutchinson ,  Ralph A. Logan

IPC分类号： H01L31/10 ,  H01L31/109 ,  H01L31/11 ,  H01L29/90 ,  H01L29/14 ,  H01L29/161

CPC分类号： H01L31/11 ,  H01L31/109

摘要： A photodetector useful between 1.0 and 1.6 microns and having an InGaAs layer with an adjacent InGaAsP p-n junction disposed on the InGaAs layer is described.

摘要翻译： 描述了在1.0和1.6微米之间有用的InGaAs层和InGaAs层上的相邻的InGaAsP p-n结的光电探测器。