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    Unipolar semiconductor laser
    2.
    发明授权
    Unipolar semiconductor laser 失效
    单极半导体激光器

    公开(公告)号：US5457709A

    公开(公告)日：1995-10-10

    申请号：US223341

    申请日：1994-04-04

    申请人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Albert L. Hutchinson ,  Serge Luryi ,  Carlo Sirtori ,  Deborah L. Sivco

    发明人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Albert L. Hutchinson ,  Serge Luryi ,  Carlo Sirtori ,  Deborah L. Sivco

    IPC分类号： H01S3/106 ,  H01S5/062 ,  H01S5/12 ,  H01S5/34 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/3402 ,  H01S3/1068 ,  H01S5/0614 ,  H01S5/06243 ,  H01S5/1228 ,  H01S5/3419

    摘要： This application discloses, to the best of our knowledge, the first unipolar laser. An exemplary embodiment of the laser was implemented in the GaInAs/AlInAs system and emits radiation of about 4.2 .mu.m wavelength. Embodiments in other material systems are possible, and the lasers can be readily designed to emit at a predetermined wavelength in a wide spectral region. We have designated the laser the "quantum cascade" (QC) laser. The QC laser comprises a multilayer semiconductor structure that comprises a multiplicity of essentially identical undoper "active" regions, a given active region being separated from an adjoining one by a doped "energy relaxation" region. In a currently preferred embodiment each active region comprises three coupled quantum wells designed to facilitate attainment of population inversion. In the currently preferred embodiment the energy relaxation regions are digitally graded gap regions. However, other energy relaxation regions are possible. The unipolar plasma in a unipolar laser can be manipulated by means of an electric "control" field, facilitating, for instance, beam steering or external control of the modal gain of the laser. Means for accomplishing this are discussed.

    摘要翻译： 根据我们所知，本应用公开了第一单极激光器。 激光器的示例性实施例在GaInAs / AlInAs系统中实现并且发射约4.2μm波长的辐射。 其他材料系统中的实施例是可能的，并且激光器可以容易地设计成在宽光谱区域中以预定波长发射。 我们已经将激光器命名为“量子级联”（QC）激光器。 QC激光器包括多层半导体结构，其包括多个基本上相同的未掺杂的“活性”区域，给定的有源区域通过掺杂的“能量弛豫”区域与邻接的区域分离。 在当前优选实施例中，每个有源区域包括三个耦合的量子阱，被设计成有助于达到群体反转。 在当前优选的实施例中，能量松弛区域是数字渐变间隙区域。 然而，其他能量松弛区也是可能的。 单极激光器中的单极性等离子体可以通过电气“控制”场进行操纵，从而有助于例如光束转向或激光的模态增益的外部控制。 讨论了实现这一点的手段。

    Unipolar semiconductor laser
    6.
    发明授权
    Unipolar semiconductor laser 失效
    单极半导体激光器

    公开(公告)号：US5509025A

    公开(公告)日：1996-04-16

    申请号：US371000

    申请日：1995-01-09

    申请人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Albert L. Hutchinson ,  Carlo Sirtori ,  Deborah L. Sivco

    发明人： Federico Capasso ,  Alfred Y. Cho ,  Jerome Faist ,  Albert L. Hutchinson ,  Carlo Sirtori ,  Deborah L. Sivco

    IPC分类号： H01S5/00 ,  H01S3/106 ,  H01S5/062 ,  H01S5/12 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/3402 ,  H01S3/1068 ,  H01S5/0614 ,  H01S5/06243 ,  H01S5/1228 ,  H01S5/1234 ,  H01S5/3419

    摘要： This application discloses, to the best of our knowledge, the first unipolar laser. An exemplary embodiment of the laser was implemented in the GaInAs/AlInAs system and emits radiation of about 4.2 .mu.m wavelength. Embodiments in other material systems are possible, and the lasers can be readily designed to emit at a predetermined wavelength in a wide spectral region. We have designated the laser the "quantum cascade" (QC) laser. The QC laser comprises a multilayer semiconductor structure that comprises a multiplicity of essentially identical undoped "active" regions, a given active region being separated from an adjoining one by a doped "energy relaxation" region. In a currently preferred embodiment each active region comprises three coupled quantum wells designed to facilitate attainment of population inversion. In the currently preferred embodiment the energy relaxation regions are digitally graded gap regions. However, other energy relaxation regions are possible. Disclosed are also embodiments that rely primarily on "vertical" transitions in a given quantum well. Such lasers preferably comprise superlattice Bragg reflectors. The unipolar plasma in a unipolar laser can be manipulated by means of an electric "control" field, facilitating, for instance, beam steering or external control of the modal gain of the laser. Means for accomplishing this are discussed.

    摘要翻译： 根据我们所知，本应用公开了第一单极激光器。 激光器的示例性实施例在GaInAs / AlInAs系统中实现并且发射约4.2μm波长的辐射。 其他材料系统中的实施例是可能的，并且激光器可以容易地设计成在宽光谱区域中以预定波长发射。 我们已经将激光器命名为“量子级联”（QC）激光器。 QC激光器包括多层半导体结构，其包括多个基本上相同的未掺杂的“有源”区域，给定的有源区域通过掺杂的“能量弛豫”区域与邻接的区域分离。 在当前优选实施例中，每个有源区域包括三个耦合的量子阱，被设计成有助于达到群体反转。 在当前优选的实施例中，能量松弛区域是数字渐变间隙区域。 然而，其他能量松弛区也是可能的。 公开的还是主要依赖于给定量子阱中的“垂直”跃迁的实施例。 这种激光器优选地包括超晶格布拉格反射器。 单极激光器中的单极性等离子体可以通过电气“控制”场进行操纵，从而有助于例如光束转向或激光的模态增益的外部控制。 讨论了实现这一点的手段。

    Resonant tunneling transistor
    8.
    发明授权
    Resonant tunneling transistor 失效
    谐振隧道晶体管

    公开(公告)号：US4849799A

    公开(公告)日：1989-07-18

    申请号：US897378

    申请日：1986-08-18

    申请人： Federico Capasso ,  Harry T. French ,  Arthur C. Gossard ,  Albert L. Hutchinson ,  Richard A. Kiehl ,  Sustana Sen

    发明人： Federico Capasso ,  Harry T. French ,  Arthur C. Gossard ,  Albert L. Hutchinson ,  Richard A. Kiehl ,  Sustana Sen

    IPC分类号： H01L29/73 ,  H01L29/737

    CPC分类号： B82Y10/00 ,  H01L29/7311 ,  H01L29/7376

    摘要： A resonant-tunneling, heterostructure bipolar transistor having a quantum well between emitter contact and collector region is described. In one embodiment, a compositionally graded portion of the emitter region is adjacent to the base region, and there is a double barrier in the base region. In another embodiment the quantum well is defined by the emitter and a potential barrier in the base region. Further embodiments have a quantum well between emitter and collector regions or else within the emitter region.

    摘要翻译： 描述了在发射极接触和集电极区域之间具有量子阱的共振隧穿，异质结双极晶体管。 在一个实施例中，发射极区域的组成渐变部分与基极区域相邻，并且在基极区域中存在双重屏障。 在另一个实施例中，量子阱由基极区域中的发射极和势垒限定。 另外的实施例在发射极和集电极区之间或在发射极区内具有量子阱。

    QUANTUM CASCADE LASER
    10.
    发明申请
    QUANTUM CASCADE LASER 有权
    量子CASCADE激光

    公开(公告)号：US20090213890A1

    公开(公告)日：2009-08-27

    申请号：US12395576

    申请日：2009-02-27

    申请人： C. Kumar N. Patel ,  Alexei Tsekoun ,  Richard Maulini ,  Arkadiy Lyakh ,  Christian Pflugl ,  Laurent Diehl ,  Qije Wang ,  Federico Capasso

    发明人： C. Kumar N. Patel ,  Alexei Tsekoun ,  Richard Maulini ,  Arkadiy Lyakh ,  Christian Pflugl ,  Laurent Diehl ,  Qije Wang ,  Federico Capasso

    IPC分类号： H01S5/343

    CPC分类号： H01S5/3402 ,  B82Y20/00

    摘要： A quantum cascade laser utilizing non-resonant extraction design having a multilayered semiconductor with a single type of carrier; at least two final levels (1 and 1′) for a transition down from level 2; an energy spacing E21 greater than ELO; an energy spacing E31 of about 100 meV; and an energy spacing E32 about equal to ELO. The carrier wave function for level 1 overlaps with the carrier wave function for level 2. Likewise, the carrier wave function for level 1′ overlaps with the carrier wave function for level 2. In a second version, the basic design also has an energy spacing E54 of about 90 meV, and levels 1 and 1′ do not have to be spatially close to each other, provided that level 2 has significant overlap with both these levels. In a third version, there are at least three final levels (1, 1′, and 1″) for a transition down from level 2. Each of the levels 1, 1′, and 1″ has a non-uniform squared wave function distribution.

    摘要翻译： 利用非谐振提取设计的量子级联激光器具有具有单一载体的多层半导体; 从第2级向下转换的至少两个最终级别（1和1'）; 能量间距E21大于ELO; 约100meV的能量间隔E31; 以及大约等于ELO的能量间隔E32。 等级1的载波函数与级2的载波功能重叠。等级1的载波函数与级别2的载波功能重叠。在第二版本中，基本设计还具有能量间隔 E54大约90 meV，1级和1级不必在空间上相互接近，只要等级2与这两个级别都有重大的重叠。 在第三版本中，从级别2向下转换至少有三个最终级别（1,1'和1“）。级别1,1'和1”中的每一个具有不均匀的平方 波函数分布。