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113 条记录 (耗时 0.039 秒)

    Resonant tunneling hot carrier transistor
    81.
    发明授权
    Resonant tunneling hot carrier transistor 失效
    谐振隧道式热载流子晶体管

    公开(公告)号：US5138408A

    公开(公告)日：1992-08-11

    申请号：US683521

    申请日：1991-04-09

    申请人： Yuji Ando

    发明人： Yuji Ando

    IPC分类号： H01L27/06 ,  H01L29/737

    CPC分类号： B82Y10/00 ,  H01L27/0605 ,  H01L29/7376

    摘要： A resonant tunneling hot carrier transistor according to the present invention is provided with a first multiple-layer structure provided on a substrate and having a first collector layer, a first collector barrier layer, a first base layer and a first quantum well resonator, a common emitter layer, and a second multiple-layer structure provided on the common emitter layer and having a second quantum well resonator, a second base layer, a second collector barrier layer and a second collector layer. The first and second quantum well resonators respectively provide first and second sub-bands different in energy level, so that carrier injections take place from the first and second quantum well resonators into the first and second base layers at different emitter-base voltage levels, respectively.

    摘要翻译： 根据本发明的谐振隧道热载流子晶体管设置有设置在基板上并具有第一集电极层，第一集电极势垒层，第一基极层和第一量子阱谐振器的第一多层结构，共同的 发射极层和设置在公共发射极层上并具有第二量子阱谐振器，第二基极层，第二集电极势垒层和第二集电极层的第二多层结构。 第一和第二量子阱谐振器分别提供能级不同的第一和第二子带，从而分别以不同的发射极 - 基极电压电平从第一和第二量子阱谐振器进入载流子注入到第一和第二基极层 。

    Resonant-tunneling functional device using multiple negative differential resistances
    82.
    发明授权
    Resonant-tunneling functional device using multiple negative differential resistances 失效
    谐振隧道功能器件采用多个负差分电阻

    公开(公告)号：US4907045A

    公开(公告)日：1990-03-06

    申请号：US209718

    申请日：1988-06-22

    申请人： Yuji Ando

    发明人： Yuji Ando

    IPC分类号： H01L29/201 ,  H01L29/06 ,  H01L29/08 ,  H01L29/205 ,  H01L29/68 ,  H01L29/772 ,  H01L29/80 ,  H01L29/86 ,  H01L29/88

    CPC分类号： B82Y10/00 ,  H01L29/0843 ,  H01L29/772

    摘要： There is described a functional device constructed with a semi-insulating substrate, a channel layer of a conductive compound semiconductor formed on the semi-insulating substrate, a channel electrode coupled to a first area of the channel layer, a gate electrode coupled to a second area of the channel layer, first and second resonant tunneling diodes formed on third and fourth areas of the channel layer intervening the second area, a source electrode formed on the first resonant tunneling diode, and a drain electrode formed on the second resonant tunneling diode. The functional device may be applied to many function circuits such as a bistable multi-vibrator or memory cell, and a frequency multiplier with addition of a few circuit elements or wirings.

    摘要翻译： 描述了一种功能器件，其构造有半绝缘衬底，形成在半绝缘衬底上的导电化合物半导体的沟道层，耦合到沟道层的第一区域的沟道电极，耦合到第二 沟道层的区域，形成在第二区域的沟道层的第三和第四区域上形成的第一和第二谐振隧道二极管，形成在第一谐振隧穿二极管上的源电极和形成在第二谐振隧穿二极管上的漏电极。 功能器件可以应用于诸如双稳态多谐振荡器或存储单元的许多功能电路，以及加上几个电路元件或布线的倍频器。

    Image processing apparatus, image processing method, and program
    83.
    发明授权
    Image processing apparatus, image processing method, and program 有权
    图像处理装置，图像处理方法和程序

    公开(公告)号：US08873808B2

    公开(公告)日：2014-10-28

    申请号：US13435746

    申请日：2012-03-30

    申请人： Goh Kobayashi ,  Yuji Ando

    发明人： Goh Kobayashi ,  Yuji Ando

    IPC分类号： G06T7/20 ,  G06T5/00 ,  H04N5/357 ,  H04N5/232 ,  H04N5/14 ,  H04N7/01 ,  H04N5/217 ,  H04N5/353

    CPC分类号： H04N5/145 ,  H04N5/217 ,  H04N5/23206 ,  H04N5/2329 ,  H04N5/3532 ,  H04N7/0127 ,  H04N7/0137

    摘要： There is provided an image processing apparatus that includes a move detecting unit that detects a move of a subject contained in a moving image from plural frame images, based on an image signal that indicates the moving image including the frame image and delay time information that indicates a delay time of an image pickup, and a correcting unit that corrects the image signal, based on the image signal and move information that indicates a move of a detected subject.

    摘要翻译： 提供一种图像处理装置，其包括移动检测单元，其基于指示包括帧图像的运动图像的图像信号和指示的帧延迟时间信息来检测来自多个帧图像的运动图像中包含的被摄体的移动 图像拾取的延迟时间，以及校正单元，其基于图像信号校正图像信号，并移动指示被检测对象的移动的信息。

    Motion picture encoding apparatus
    85.
    发明授权
    Motion picture encoding apparatus 有权
    动态影像编码装置

    公开(公告)号：US07158570B2

    公开(公告)日：2007-01-02

    申请号：US10312555

    申请日：2002-05-09

    申请人： Takefumi Nagumo ,  Hiroyuki Yasuda ,  Satoshi Mitsuhashi ,  Yuji Ando ,  Takashi Kojima ,  Yiwen Zhu

    发明人： Takefumi Nagumo ,  Hiroyuki Yasuda ,  Satoshi Mitsuhashi ,  Yuji Ando ,  Takashi Kojima ,  Yiwen Zhu

    IPC分类号： H04B1/66

    CPC分类号： H04N19/587 ,  H04N19/105 ,  H04N19/115 ,  H04N19/132 ,  H04N19/139 ,  H04N19/152 ,  H04N19/17 ,  H04N19/172 ,  H04N19/51 ,  H04N19/61

    摘要： Motion picture data is compression-encoded by a compression encoder with the frame rate changing according to the amount of accumulated data of the buffer, which can adequately change the number of pieces of frame image data to be compression-encoded per unit time, according to the change in the picture of the motion picture. In addition, tracing is done to trace extract image data in the frame image data by using a simple motion vector detected for the frame image data of the motion picture data, a higher layer motion vector detector detects a motion vector of the frame image data by using the simple motion vector in common, and a compression encoder extracts the extract image data based on the results of tracing and compression-encodes it by using the motion vector.

    摘要翻译： 运动图像数据由压缩编码器进行压缩编码，帧速率根据缓冲器的累积数据量而改变，这可以根据单位时间适当地改变要被压缩编码的帧图像数据的数量 电影图片的变化。 此外，通过使用针对运动图像数据的帧图像数据检测的简单运动矢量来跟踪提取帧图像数据中的图像数据，较高层运动矢量检测器通过以下方式检测帧图像数据的运动矢量 使用简单的运动矢量，压缩编码器基于跟踪结果提取提取图像数据，并通过使用运动矢量对其进行压缩编码。

    Resonant tunneling bipolar transistor
    88.
    发明授权
    Resonant tunneling bipolar transistor 失效
    谐振隧道双极晶体管

    公开(公告)号：US5705825A

    公开(公告)日：1998-01-06

    申请号：US520777

    申请日：1995-08-30

    申请人： Yuji Ando

    发明人： Yuji Ando

    IPC分类号： H01L29/68 ,  H01L21/331 ,  H01L29/205 ,  H01L29/73 ,  H01L29/737 ,  H01L29/15

    CPC分类号： B82Y10/00 ,  H01L29/7376

    摘要： Excellent negative resistance characteristics are attained in a resonant bipolar transistor (RBT) while improving current gain. A first conduction type collector layers and the opposite conduction type base layer are sequentially formed on a semiconductor substrate. A quantum well structure in which a quantum level of electrons or holes is generated, and a contact layer of the same conduction type as the base layer are sequentially formed on a part of the base layer. An emitter layer of the same conduction type as the collector layer is formed directly on another part of the base. Since good negative resistance characteristics can be attained by utilizing the resonant tunneling effect of base majority carriers, and the quantum well structure causing carrier accumulation can be eliminated from the path of carriers flowing between the emitter and the collector, it is possible to reduce the recombination current at the emitter-base interface and in the quantum well structure, thereby improving current gain.

    摘要翻译： 在谐振双极晶体管（RBT）中获得优异的负电阻特性，同时改善电流增益。 第一导电型集电极层和相对导电型基极层依次形成在半导体衬底上。 其中产生电子或空穴的量子水平的量子阱结构，并且在基底层的一部分上依次形成与基底层相同的导电类型的接触层。 与集电体层相同的导电类型的发射极层直接形成在基底的另一部分上。 由于通过利用基极多数载流子的谐振隧穿效应可以获得良好的负电阻特性，并且可以从引发器和集电极之间流动的载流子的路径中消除引起载流子累积的量子阱结构，可以减少复合 电流在发射极 - 基极界面和量子阱结构中，从而改善电流增益。

    Schottky gate field effect transistor
    89.
    发明授权
    Schottky gate field effect transistor 失效
    肖特基门场效应晶体管

    公开(公告)号：US5548139A

    公开(公告)日：1996-08-20

    申请号：US266616

    申请日：1994-06-28

    申请人： Yuji Ando

    发明人： Yuji Ando

    IPC分类号： H01L29/78 ,  H01L21/338 ,  H01L29/778 ,  H01L29/80 ,  H01L29/812 ,  H01L31/0328 ,  H01L31/0336

    CPC分类号： H01L29/7783

    摘要： The invention provides a semiconductor multi-layer structure involved in a Schottky gate field effect transistor. The structure comprises a Schottky barrier structure to form a Schottky contact permitting the third conduction band edge to have such a sufficient large discontinuity as to prevent carriers to pass through the Schottky barrier layer, while the Schottky barrier structure includes a quantum well or super-lattice structure to permit carriers to exhibit a tunneling at a high probability between the quantum well layer and a cap layer doped at a sufficient high impurity concentration for permitting the fourth compound semiconductor to be in a degenerate state.

    摘要翻译： 本发明提供涉及肖特基门场效应晶体管的半导体多层结构。 该结构包括肖特基势垒结构以形成肖特基接触，允许第三导带边缘具有足够的大的不连续性，以防止载流子穿过肖特基势垒层，而肖特基势垒结构包括量子阱或超晶格 结构，以允许载体在量子阱层和以足够高的杂质浓度掺杂的覆盖层之间以高概率展现隧道，以允许第四化合物半导体处于退化状态。

    Field effect transistor
    90.
    发明授权
    Field effect transistor 失效
    场效应晶体管

    公开(公告)号：US5105241A

    公开(公告)日：1992-04-14

    申请号：US723664

    申请日：1991-06-26

    申请人： Yuji Ando

    发明人： Yuji Ando

    IPC分类号： H01L29/812 ,  H01L21/338 ,  H01L29/778

    CPC分类号： H01L29/7783

    摘要： In a filed effect transistor utilizing two-dimensional electron gas as an active layer, an improvement to increase sheet electron density in a cap layer has been made by inserting into the cap layer at an interface with a carrier supplying layer, a thin film comprising a material having an electron affinity larger than that of a material constituting the cap layer. Further by employing a non-doped material for this thin film layer, electron mobility in the cap layer can also be improved. Thus source resistance of the field effect transistor has been reduced.

    摘要翻译： 在利用二维电子气作为有源层的场效应晶体管中，通过在与载流子供应层的界面处插入到盖层中来提高盖层​​中的片电子密度的改进，薄膜包括 具有大于构成盖层的材料的电子亲和力的材料。 此外，通过对该薄膜层采用非掺杂材料，也可以提高盖层中的电子迁移率。 因此，场效应晶体管的源极电阻已经降低。