公开(公告)号：US07115510B2

公开(公告)日：2006-10-03

申请号：US10996164

申请日：2004-11-22

申请人： Bulent M. Basol ,  Homayoun Talieh ,  Cyprian E. Uzoh

发明人： Bulent M. Basol ,  Homayoun Talieh ,  Cyprian E. Uzoh

IPC分类号： H01L21/44

CPC分类号： B23H5/08 ,  C25D5/02 ,  C25D5/10 ,  C25D5/18 ,  C25D5/22 ,  C25D7/123 ,  H01L21/2885 ,  H01L21/32125 ,  H01L21/7684 ,  H01L21/76877

摘要： The present invention relates to a process for forming a near-planar or planar layer of a conducting material, such as copper, on a surface of a workpiece using an ECMPR technique. The process preferably uses at least two separate plating solution chemistries to form a near-planar or planar copper layer on a semiconductor substrate that has features or cavities on its surface.

摘要翻译： 本发明涉及使用ECMPR技术在工件表面上形成诸如铜的导电材料的近平面或平面层的方法。 该方法优选使用至少两个单独的电镀溶液化学物质在其表面上具有特征或空腔的半导体衬底上形成近平面或平面的铜层。

公开(公告)号：US20060030244A1

公开(公告)日：2006-02-09

申请号：US11241281

申请日：2005-09-29

申请人： Homayoun Talieh

发明人： Homayoun Talieh

IPC分类号： B24B1/00

CPC分类号： B24B41/068 ,  B24B21/004 ,  B24B21/06 ,  B24B37/107 ,  B24B37/26 ,  B24B37/30

摘要： A chemical mechanical polishing apparatus includes a rotating plate on which a substrate received, and a polishing pad which moves across the substrate as it rotates on the plate to polish the substrate. The load of the pad against the substrate, and the rotary speed of the plate, may be varied to control the rate of material removed by the pad.

公开(公告)号：US06908374B2

公开(公告)日：2005-06-21

申请号：US10052475

申请日：2002-01-17

申请人： Yuchun Wang ,  Bernard M. Frey ,  Bulent M. Basol ,  Douglas W. Young ,  Homayoun Talieh ,  Efrain Velazquez

发明人： Yuchun Wang ,  Bernard M. Frey ,  Bulent M. Basol ,  Douglas W. Young ,  Homayoun Talieh ,  Efrain Velazquez

IPC分类号： B24B21/04 ,  B24B21/08 ,  B24B37/04 ,  B24B47/04 ,  B24B49/16 ,  B24B49/12

CPC分类号： B24B37/205 ,  B24B21/04 ,  B24B21/08 ,  B24B37/013 ,  B24B37/04 ,  B24B47/04 ,  B24B49/16

摘要： The methods and systems described provide for an in-situ endpoint detection for material removal processes such as chemical mechanical processing (CMP) performed on a workpiece. In a preferred embodiment, an optical detection system is used to detect endpoint during the removal of planar conductive layers using CMP. An optically transparent polishing belt provides endpoint detection through any spot on the polishing belt. Once endpoint is detected, a signal can be used to terminate or alter a CMP process that has been previously initiated.

摘要翻译： 所描述的方法和系统提供用于材料去除过程（例如在工件上执行的化学机械处理（CMP））的原位端点检测。 在优选实施例中，使用光学检测系统来检测使用CMP去除平面导电层期间的端点。 光学透明的抛光带通过抛光带上的任何点提供端点检测。 一旦检测到端点，就可以使用信号来终止或改变先前已经启动的CMP过程。

公开(公告)号：US06857947B2

公开(公告)日：2005-02-22

申请号：US10346425

申请日：2003-01-17

申请人： Yuchun Wang ,  Bernard M. Frey ,  Bulent M. Basol ,  Homayoun Talieh ,  Douglas W. Young ,  Brett E. McGrath ,  Mukesh Desai ,  Efrain Velazquez ,  Tuan Truong

发明人： Yuchun Wang ,  Bernard M. Frey ,  Bulent M. Basol ,  Homayoun Talieh ,  Douglas W. Young ,  Brett E. McGrath ,  Mukesh Desai ,  Efrain Velazquez ,  Tuan Truong

IPC分类号： B24B21/04 ,  B24B21/08 ,  B24B37/013 ,  B24B37/20 ,  B24B49/10 ,  B24B49/16 ,  B24B21/00

CPC分类号： B24B37/013 ,  B24B21/04 ,  B24B21/08 ,  B24B37/205 ,  B24B49/10 ,  B24B49/16

摘要： An apparatus for polishing a workpiece includes a workpiece holder configured to hold the workpiece, a polishing member configured to be positioned adjacent to a face of the workpiece in order to polish the workpiece face with a front side of the polishing member, and a platen having a plurality of pressure zones configured to selectively apply pressure to the polishing member thereby causing the polishing member to contact the workpiece face with selective pressure. In another embodiment, the apparatus includes a pressure controller coupled to the platen and configured to selectively adjust the pressure zones.

摘要翻译： 一种用于抛光工件的装置包括：被配置为保持工件的工件保持器;抛光构件，其构造成邻近工件的表面定位，以便抛光工件面与抛光构件的前侧;以及压板， 多个压力区被配置为选择性地向抛光构件施加压力，从而使抛光构件与选择压力接触工件面。 在另一个实施例中，该装置包括耦合到压板并配置成选择性地调节压力区的压力控制器。

公开(公告)号：US20050034976A1

公开(公告)日：2005-02-17

申请号：US10946703

申请日：2004-09-21

申请人： Homayoun Talieh ,  Cyprian Uzoh

发明人： Homayoun Talieh ,  Cyprian Uzoh

IPC分类号： B24B37/16 ,  C25D5/06 ,  C25D5/22 ,  C25D7/12 ,  C25D17/00 ,  C25D17/12 ,  C25D17/14 ,  C25F7/00 ,  H01L21/288 ,  H01L21/304 ,  H01L21/3205 ,  H01L21/321 ,  C25D5/48

CPC分类号： B24B37/16 ,  C25D5/06 ,  C25D5/22 ,  C25D7/123 ,  C25D17/001 ,  C25D17/14 ,  C25F7/00 ,  H01L21/3212

摘要： The present invention provides a method and apparatus that plates/deposits a conductive material on a semiconductor substrate and then polishes the same substrate. This is achieved by providing multiple chambers in a single apparatus, where one chamber can be used for plating/depositing the conductive material and another chamber can be used for polishing the semiconductor substrate. The plating/depositing process can be performed using brush plating or electro chemical mechanical deposition and the polishing process can be performed using electropolishing or chemical mechanical polishing. The present invention further provides a method and apparatus for intermittently applying the conductive material to the semiconductor substrate and also intermittently polishing the substrate when such conductive material is not being applied to the substrate. Furthermore, the present invention provides a method and apparatus that plates/deposits and/or polishes a conductive material and improves the electrolyte mass transfer properties on a substrate using a novel anode assembly.

摘要翻译： 本发明提供一种在半导体衬底上沉积/沉积导电材料然后抛光相同衬底的方法和装置。 这通过在单个设备中提供多个室来实现，其中一个室可以用于电镀/沉积导电材料，并且另一个室可以用于抛光半导体衬底。 电镀/沉积工艺可以使用刷镀或电化学机械沉积进行，并且可以使用电抛光或化学机械抛光进行抛光工艺。 本发明还提供一种用于将导电材料间歇地施加到半导体衬底的方法和装置，并且当这种导电材料未被施加到衬底时也间歇地抛光衬底。 此外，本发明提供了一种使用新型阳极组件对导电材料进行平板/沉积和/或抛光并改善基板上的电解质传质性质的方法和装置。

公开(公告)号：US06852630B2

公开(公告)日：2005-02-08

申请号：US09841622

申请日：2001-04-23

申请人： Bulent M. Basol ,  Cyprian Uzoh ,  Halit N. Yakupoglu ,  Homayoun Talieh

发明人： Bulent M. Basol ,  Cyprian Uzoh ,  Halit N. Yakupoglu ,  Homayoun Talieh

IPC分类号： B23H5/08 ,  C25F3/14 ,  H01L21/288 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/768 ,  H01L21/302

CPC分类号： H01L21/32115 ,  B23H5/08 ,  C25F3/14 ,  H01L21/2885 ,  H01L21/32134 ,  H01L21/7684

摘要： A system for optionally depositing or etching a layer of a wafer includes mask plate opposed to the wafer with the mask plate having a plurality of openings that transport a solution to the wafer. An electrode assembly has a first electrode member and a second electrode member having channels that operatively interface a peripheral and center part of the wafer. The channels transport the solution to the mask.

摘要翻译： 用于可选地沉积或蚀刻晶片层的系统包括与晶片相对的掩模板，掩模板具有将溶液输送到晶片的多个开口。 电极组件具有第一电极部件和第二电极部件，该第二电极部件具有可操作地与晶片的周边部分和中心部分接合的通道。 通道将解决方案传输到面罩。

公开(公告)号：US06695962B2

公开(公告)日：2004-02-24

申请号：US09845262

申请日：2001-05-01

申请人： Cyprian E. Uzoh ,  Homayoun Talieh ,  Bulent M. Basol

发明人： Cyprian E. Uzoh ,  Homayoun Talieh ,  Bulent M. Basol

IPC分类号： C25D500

CPC分类号： C25D7/12 ,  C25D5/08 ,  C25F7/00 ,  H01L21/2885 ,  H01L21/32115 ,  H01L21/32134

摘要： An anode assembly by which a solution can be supplied to a surface of a semiconductor substrate includes a housing defining an internal housing volume into which the solution can flow. A closure is provided for the internal housing volume, and the solution can be discharged from the internal housing volume through the closure towards the surface of the semiconductor substrate. A filter divides the internal housing volume into a first chamber and a second chamber located between the first chamber and the closure. During supply of the solution to the surface, a flow of the solution into the second chamber occurs at a higher rate than a flow of the solution into the first chamber, and the flows are blended in the second chamber.

摘要翻译： 可以将溶液供应到半导体衬底的表面的阳极组件包括限定溶液可以流过的内部容纳容积的壳体。 为内部容积容积提供闭合件，并且溶液可以通过闭合件从内部容纳体积朝向半导体衬底的表面排出。 过滤器将内部容器体积分成第一室和位于第一室和封闭件之间的第二室。 在将溶液供应到表面期间，溶液流入第二室的流量以比溶液流入第一室的速度更高的速率进行，并且流在第二室中共混。

公开(公告)号：US06248398B1

公开(公告)日：2001-06-19

申请号：US08651277

申请日：1996-05-22

申请人： Homayoun Talieh ,  Alex Lurye

发明人： Homayoun Talieh ,  Alex Lurye

IPC分类号： B05D100

CPC分类号： G03F7/162

摘要： A coater having a controllable pressurized process chamber for applying photoresist to a wafer is provided. The controllable pressurized process chamber reduces the evaporation of solvent in the photoresist during a spin-on process step. Reducing premature curing of the photoresist results in improved uniform planarization of the photoresist layer. Contaminants in the photoresist are also reduced by having an environmentally controllable process chamber. A housing having a upper and lower section forms a process chamber surrounding a wafer chuck. The upper housing section includes a solvent vapor opening for introducing pressurized solvent vapor into the process chamber and the lower housing section includes an exhaust opening. The upper housing section also includes an opening for introducing photoresist onto a wafer. A control device is coupled to the exhaust opening and a vacuum device for controlling the pressure in the process chamber. A sealed recycling photoresist container and recycling apparatus is also coupled to the exhaust opening to store unused photoresist. The unused photoresist may be used in subsequent spin-on process steps, thereby reducing processing costs.

摘要翻译： 提供了具有用于将光致抗蚀剂施加到晶片的可控加压处理室的涂布机。 可控加压处理室在旋涂工艺步骤期间减少光致抗蚀剂中溶剂的蒸发。 降低光致抗蚀剂的过早固化导致光致抗蚀剂层的均匀平坦化改善。 光致抗蚀剂中的污染物也通过具有环境可控的处理室来减少。 具有上部和下部的壳体形成围绕晶片卡盘的处理室。 上壳体部分包括用于将加压溶剂蒸气引入处理室的溶剂蒸气开口，下壳体部分包括排气口。 上壳体部分还包括用于将光致抗蚀剂引入晶片的开口。 控制装置联接到排气口和用于控制处理室中的压力的​​真空装置。 密封的回收光致抗蚀剂容器和回收设备也耦合到排气口以存储未使用的光致抗蚀剂。 未使用的光致抗蚀剂可用于随后的旋涂工艺步骤，从而降低加工成本。

公开(公告)号：US07578923B2

公开(公告)日：2009-08-25

申请号：US10391924

申请日：2003-03-18

申请人： Bulent M. Basol ,  Homayoun Talieh

发明人： Bulent M. Basol ,  Homayoun Talieh

IPC分类号： C25F3/02 ,  B23H5/06

CPC分类号： B24B37/20 ,  B23H5/08 ,  C25D5/02 ,  C25D5/06 ,  C25D5/22 ,  C25D7/123 ,  C25F3/02 ,  C25F7/00 ,  H01L21/2885 ,  H01L21/32115 ,  H01L21/32125 ,  H01L21/67075 ,  H01L21/6715

摘要： The present invention provides a process for electropolishing a conductive surface of a semiconductor wafer. During the process, a contact electrode in a contact solution contacts a contact region on surface of the conductive layer with the contact solution. Further, during the process a process electrode in a process solution contacts a process region on the conductive surface with the process solution while applying an electrical potential between the contact electrode and the process electrode to electropolish the surface of the conductive layer of the process region.

摘要翻译： 本发明提供一种电抛光半导体晶片的导电表面的方法。 在该过程中，接触溶液中的接触电极与接触溶液接触导电层表面上的接触区域。 此外，在该过程中，处理溶液中的处理电极与处理溶液接触导电表面上的工艺区域，同时在接触电极和处理电极之间施加电位，以电镀抛光工艺区域的导电层的表面。

公开(公告)号：US07491308B2

公开(公告)日：2009-02-17

申请号：US11123268

申请日：2005-05-05

申请人： Homayoun Talieh ,  Cyprian Uzoh ,  Bulent M. Basol

发明人： Homayoun Talieh ,  Cyprian Uzoh ,  Bulent M. Basol

IPC分类号： C25D5/00 ,  C25B9/00

CPC分类号： B23H3/04 ,  B23H5/08 ,  C25D5/08 ,  C25D17/00 ,  C25D17/001 ,  C25D17/005 ,  C25F7/00 ,  H01L21/2885

摘要： Substantially uniform deposition of conductive material on a surface of a substrate, which substrate includes a semiconductor wafer, from an electrolyte containing the conductive material can be provided by way of a particular device which includes first and second conductive elements. The first conductive element can have multiple electrical contacts, of identical or different configurations, or may be in the form of a conductive pad, and can contact or otherwise electrically interconnect with the substrate surface over substantially all of the substrate surface. Upon application of a potential between the first and second conductive elements while the electrolyte makes physical contact with the substrate surface and the second conductive element, the conductive material is deposited on the substrate surface. It is possible to reverse the polarity of the voltage applied between the anode and the cathode so that electro-etching of deposited conductive material can be performed.

摘要翻译： 可以通过包括第一和第二导电元件的特定装置来提供导电材料在包含导电材料的电解质的衬底的包括半导体晶片的表面上的基本均匀沉积。 第一导电元件可以具有相同或不同构造的多个电触点，或者可以是导电焊盘的形式，并且可以在基本上所有的衬底表面上与衬底表面接触或以其他方式电互连。 当在电解质与衬底表面和第二导电元件物理接触的同时在第一和第二导电元件之间施加电势时，导电材料沉积在衬底表面上。 可以使施加在阳极和阴极之间的电压的极性反转，从而可以对沉积的导电材料进行电蚀刻。