摘要:
A semiconductor light-emitting device includes a laminated body that is configured to emit light from a main surface thereof, first and second electrodes, each disposed on a surface of the laminated body that is opposite the main surface, a first terminal that is electrically coupled to the first electrode, has a concave edge but not a convex edge, and has at most three exposed sides, and a second terminal that is electrically coupled to the second electrode, has a concave edge but not a convex edge, and has at most three exposed sides.
摘要:
According to an embodiment, a semiconductor light emitting device includes a stacked body, first and second electrodes, first and second interconnections, first and second pillars and a first insulating layer. The stacked body includes first and second semiconductor layers and a light emitting layer. The first and second electrodes are connected to the first and second semiconductor layers respectively. The first and second interconnections are connected to the first and second electrode respectively. The first and second pillars are connected to the first and second interconnections respectively. The first insulating layer is provided on the interconnections and the pillars. The first and second pillars have first and second monitor pads exposed in a surface of the first insulating layer. The first and second interconnections have first and second bonding pads exposed in a side face connected with the surface of the first insulating layer.
摘要:
A transmission device includes: a transmitting unit that transmits a common reference signal and a receiving device-specific reference signal to a receiving device; a selecting unit that selects either a first mode reporting a receiving quality using only the common reference signal or a second mode reporting a receiving quality using at least the receiving device-specific reference signal; and a notifying unit that notifies a mode selected by the selecting unit to the receiving device.
摘要:
According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar and a second insulating layer. The semiconductor layer includes a first major surface, a second major surface opposite to the first major surface and a light emitting layer. An edge of a part of the first interconnect layer is exposed laterally from the first insulating layer and the second insulating layer.
摘要:
According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a second insulating layer. The semiconductor layer includes a first major surface, a second major surface opposite to the first major surface, and a light emitting layer. The first electrode is provided on a region including the light emitting layer on the second major surface. The second electrode is provided on the second major surface and interposed in the first electrode in a planar view.
摘要:
In one embodiment, a method for manufacturing a light-emitting device is disclosed. The method can include removing a substrate from a semiconductor layer. The semiconductor layer is provided on a first main surface of the substrate. The semiconductor layer includes a light-emitting layer. At least a top surface and side surfaces of the semiconductor layer are covered with a first insulating film. A first electrode portion and a second electrode portion electrically continuous to the semiconductor layer are provided. The first insulating film is covered with a second insulating film. The removing is performed by irradiating the semiconductor layer with laser light from a side of a second main surface of the substrate. The second main surface is opposite to the first main surface. Each of band-gap energy of the second insulating film and band-gap energy of the semiconductor layer are smaller than energy of the laser light.
摘要:
According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a second insulating layer. The first electrode is provided on the second major surface of the semiconductor layer. The second electrode is provided on a side face of a portion of the semiconductor layer between the light emitting layer and the first major surface. The second interconnect layer is provided in the second opening and on the first insulating layer on the side opposite to the second major surface to connect to the second electrode provided on the side face. The second interconnect layer is provided on the side face of the portion of the semiconductor layer with interposing the second electrode.
摘要:
To optimize transmission periods corresponding to kinds of feedback information, and minimize a reduction in system throughput caused by disagreement of the transmission period with the optimal period, by setting transmission frequencies individually with flexibility corresponding to the kinds of feedback information for a mobile station apparatus to transmit to a base station apparatus, in a wireless communication system in which a mobile station apparatus B measures reception quality of a signal received from a base station apparatus A, and transmits feedback information generated based on the reception quality to the base station apparatus A, the base station apparatus A allocates resources of transmission timing corresponding to the kinds of feedback information, and the mobile station apparatus B transmits a plurality of kinds of feedback information to the base station apparatus using the allocated resources.
摘要:
A semiconductor device according to one embodiment includes: a semiconductor substrate; an insulating film provided on the semiconductor substrate and containing a wiring trench; a first catalyst layer provided directly or via another member on side and bottom surfaces of the wiring trench; and a first graphene layer provided in the wiring trench so as to be along the side and bottom surface of the wiring trench, the first graphene layer being provided on the first catalyst layer so as to be in contact with the first catalyst layer.
摘要:
In the case that periodical transmission of transmission signal number-of-sequence quality indicative signal cannot be performed, the number of transmission signal sequences is clarified in association with reception quality information that is generated immediately after the case, and the base station apparatus performs appropriate communication resource allocation. A mobile station apparatus has a feedback information control section 65 that generates feedback information including reception quality information, transmission signal preprocessing information and transmission signal number-of-sequence information, and a radio transmission section 51 that periodically transmits the generated feedback information to the base station apparatus, where when the radio transmission section 51 does not transmit the transmission signal number-of-sequence information with communication resources periodically allocated from the base station apparatus so as to transmit the transmission signal number-of-sequence information, the radio transmission section 51 transmits the transmission signal number-of-sequence information to the base station apparatus with communication resources enabling transmission of the feedback information allocated from the base station apparatus subsequently to the communication resources.