SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME
    82.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME 失效
    半导体发光器件及其制造方法

    公开(公告)号:US20120241792A1

    公开(公告)日:2012-09-27

    申请号:US13424687

    申请日:2012-03-20

    IPC分类号: H01L33/60 H01L33/00

    摘要: According to an embodiment, a semiconductor light emitting device includes a stacked body, first and second electrodes, first and second interconnections, first and second pillars and a first insulating layer. The stacked body includes first and second semiconductor layers and a light emitting layer. The first and second electrodes are connected to the first and second semiconductor layers respectively. The first and second interconnections are connected to the first and second electrode respectively. The first and second pillars are connected to the first and second interconnections respectively. The first insulating layer is provided on the interconnections and the pillars. The first and second pillars have first and second monitor pads exposed in a surface of the first insulating layer. The first and second interconnections have first and second bonding pads exposed in a side face connected with the surface of the first insulating layer.

    摘要翻译: 根据实施例,半导体发光器件包括层叠体,第一和第二电极,第一和第二互连,第一和第二柱以及第一绝缘层。 层叠体包括第一和第二半导体层和发光层。 第一和第二电极分别连接到第一和第二半导体层。 第一和第二互连分别连接到第一和第二电极。 第一和第二支柱分别连接到第一和第二互连。 第一绝缘层设置在互连和支柱上。 第一和第二支柱具有暴露在第一绝缘层的表面中的第一和第二监视器焊盘。 第一和第二互连具有暴露在与第一绝缘层的表面连接的侧面中的第一和第二接合焊盘。

    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME
    84.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
    半导体发光器件及其制造方法

    公开(公告)号:US20110297998A1

    公开(公告)日:2011-12-08

    申请号:US13052250

    申请日:2011-03-21

    IPC分类号: H01L33/36 H01L21/66

    摘要: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar and a second insulating layer. The semiconductor layer includes a first major surface, a second major surface opposite to the first major surface and a light emitting layer. An edge of a part of the first interconnect layer is exposed laterally from the first insulating layer and the second insulating layer.

    摘要翻译: 根据一个实施例,半导体发光器件包括半导体层,第一电极,第二电极,第一绝缘层,第一互连层,第二互连层,第一金属柱,第二金属柱和第二金属柱 绝缘层。 半导体层包括第一主表面,与第一主表面相对的第二主表面和发光层。 第一互连层的一部分的边缘从第一绝缘层和第二绝缘层横向暴露。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    85.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号:US20110297997A1

    公开(公告)日:2011-12-08

    申请号:US13052248

    申请日:2011-03-21

    IPC分类号: H01L33/38

    摘要: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a second insulating layer. The semiconductor layer includes a first major surface, a second major surface opposite to the first major surface, and a light emitting layer. The first electrode is provided on a region including the light emitting layer on the second major surface. The second electrode is provided on the second major surface and interposed in the first electrode in a planar view.

    摘要翻译: 根据一个实施例,半导体发光器件包括半导体层,第一电极,第二电极,第一绝缘层,第一互连层,第二互连层,第一金属柱,第二金属柱和 第二绝缘层。 半导体层包括第一主表面,与第一主表面相对的第二主表面和发光层。 第一电极设置在包括第二主表面上的发光层的区域上。 第二电极设置在第二主表面上并且以平面视图插入第一电极中。

    METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE AND LIGHT-EMITTING DEVICE MANUFACTURED BY THE SAME
    86.
    发明申请
    METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE AND LIGHT-EMITTING DEVICE MANUFACTURED BY THE SAME 审中-公开
    用于制造发光装置的方法和由其制造的发光装置

    公开(公告)号:US20110297995A1

    公开(公告)日:2011-12-08

    申请号:US12888754

    申请日:2010-09-23

    IPC分类号: H01L33/38 H01L33/00

    摘要: In one embodiment, a method for manufacturing a light-emitting device is disclosed. The method can include removing a substrate from a semiconductor layer. The semiconductor layer is provided on a first main surface of the substrate. The semiconductor layer includes a light-emitting layer. At least a top surface and side surfaces of the semiconductor layer are covered with a first insulating film. A first electrode portion and a second electrode portion electrically continuous to the semiconductor layer are provided. The first insulating film is covered with a second insulating film. The removing is performed by irradiating the semiconductor layer with laser light from a side of a second main surface of the substrate. The second main surface is opposite to the first main surface. Each of band-gap energy of the second insulating film and band-gap energy of the semiconductor layer are smaller than energy of the laser light.

    摘要翻译: 在一个实施例中,公开了一种用于制造发光器件的方法。 该方法可以包括从半导体层去除衬底。 半导体层设置在基板的第一主表面上。 半导体层包括发光层。 至少半导体层的顶表面和侧表面被第一绝缘膜覆盖。 提供与半导体层电连接的第一电极部分和第二电极部分。 第一绝缘膜被第二绝缘膜覆盖。 通过从基板的第二主表面侧的激光照射半导体层来进行去除。 第二主表面与第一主表面相对。 第二绝缘膜的带隙能量和半导体层的带隙能量的每一个都小于激光的能量。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    87.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    半导体发光器件

    公开(公告)号:US20110284910A1

    公开(公告)日:2011-11-24

    申请号:US12886092

    申请日:2010-09-20

    IPC分类号: H01L33/38

    CPC分类号: H01L33/385 H01L33/14

    摘要: According to one embodiment, a semiconductor light emitting device includes a semiconductor layer, a first electrode, a second electrode, a first insulating layer, a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, and a second insulating layer. The first electrode is provided on the second major surface of the semiconductor layer. The second electrode is provided on a side face of a portion of the semiconductor layer between the light emitting layer and the first major surface. The second interconnect layer is provided in the second opening and on the first insulating layer on the side opposite to the second major surface to connect to the second electrode provided on the side face. The second interconnect layer is provided on the side face of the portion of the semiconductor layer with interposing the second electrode.

    摘要翻译: 根据一个实施例,半导体发光器件包括半导体层,第一电极,第二电极,第一绝缘层,第一互连层,第二互连层,第一金属柱,第二金属柱和 第二绝缘层。 第一电极设置在半导体层的第二主表面上。 第二电极设置在发光层和第一主表面之间的半导体层的一部分的侧面上。 第二互连层设置在与第二主表面相对的一侧的第二开口中和第一绝缘层上,以连接到设置在侧面上的第二电极。 第二互连层设置在半导体层的该部分的侧面上并插入第二电极。

    WIRELESS COMMUNICATION SYSTEM, BASE STATION APPARATUS AND MOBILE STATION APPARATUS

    公开(公告)号:US20110194520A1

    公开(公告)日:2011-08-11

    申请号:US13090061

    申请日:2011-04-19

    IPC分类号: H04W72/04

    摘要: To optimize transmission periods corresponding to kinds of feedback information, and minimize a reduction in system throughput caused by disagreement of the transmission period with the optimal period, by setting transmission frequencies individually with flexibility corresponding to the kinds of feedback information for a mobile station apparatus to transmit to a base station apparatus, in a wireless communication system in which a mobile station apparatus B measures reception quality of a signal received from a base station apparatus A, and transmits feedback information generated based on the reception quality to the base station apparatus A, the base station apparatus A allocates resources of transmission timing corresponding to the kinds of feedback information, and the mobile station apparatus B transmits a plurality of kinds of feedback information to the base station apparatus using the allocated resources.

    MOBILE STATION APPARATUS, BASE STATION APPARATUS, COMMUNICATION METHOD AND COMMUNICATION SYSTEM
    90.
    发明申请
    MOBILE STATION APPARATUS, BASE STATION APPARATUS, COMMUNICATION METHOD AND COMMUNICATION SYSTEM 有权
    移动站装置,基站装置,通信方法和通信系统

    公开(公告)号:US20100248733A1

    公开(公告)日:2010-09-30

    申请号:US12739911

    申请日:2009-03-13

    摘要: In the case that periodical transmission of transmission signal number-of-sequence quality indicative signal cannot be performed, the number of transmission signal sequences is clarified in association with reception quality information that is generated immediately after the case, and the base station apparatus performs appropriate communication resource allocation. A mobile station apparatus has a feedback information control section 65 that generates feedback information including reception quality information, transmission signal preprocessing information and transmission signal number-of-sequence information, and a radio transmission section 51 that periodically transmits the generated feedback information to the base station apparatus, where when the radio transmission section 51 does not transmit the transmission signal number-of-sequence information with communication resources periodically allocated from the base station apparatus so as to transmit the transmission signal number-of-sequence information, the radio transmission section 51 transmits the transmission signal number-of-sequence information to the base station apparatus with communication resources enabling transmission of the feedback information allocated from the base station apparatus subsequently to the communication resources.

    摘要翻译: 在不能执行发送信号序列数量质量指示信号的周期性发送的情况下,与紧接在情况之后立即生成的接收质量信息相关联地显示发送信号序列的数量,并且基站装置执行适当的 沟通资源分配。 移动站装置具有反馈信息控制部65,其生成包括接收质量信息,发送信号预处理信息和发送信号序列数信息的反馈信息,以及无线发送部51,其将生成的反馈信息周期性地发送到基站 无线发送部51不发送来自基站装置的周期性分配的通信资源的发送信号序列信息,发送发送信号序列数信息时,无线发送部 51将发送信号序列数信息发送给基站装置,通信资源能够从基站装置分配的反馈信息随后发送到通信资源。