公开(公告)号：US08614455B2

公开(公告)日：2013-12-24

申请号：US13424687

申请日：2012-03-20

申请人： Susumu Obata ,  Kazuhito Higuchi ,  Hideo Nishiuchi ,  Akiya Kimura ,  Toshiya Nakayama ,  Yoshiaki Sugizaki ,  Akihiro Kojima ,  Yosuke Akimoto

发明人： Susumu Obata ,  Kazuhito Higuchi ,  Hideo Nishiuchi ,  Akiya Kimura ,  Toshiya Nakayama ,  Yoshiaki Sugizaki ,  Akihiro Kojima ,  Yosuke Akimoto

IPC分类号： H01L33/00

CPC分类号： H01L33/62 ,  H01L33/486 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

摘要： According to an embodiment, a semiconductor light emitting device includes a stacked body, first and second electrodes, first and second interconnections, first and second pillars and a first insulating layer. The stacked body includes first and second semiconductor layers and a light emitting layer. The first and second electrodes are connected to the first and second semiconductor layers respectively. The first and second interconnections are connected to the first and second electrode respectively. The first and second pillars are connected to the first and second interconnections respectively. The first insulating layer is provided on the interconnections and the pillars. The first and second pillars have first and second monitor pads exposed in a surface of the first insulating layer. The first and second interconnections have first and second bonding pads exposed in a side face connected with the surface of the first insulating layer.

摘要翻译： 根据实施例，半导体发光器件包括层叠体，第一和第二电极，第一和第二互连，第一和第二柱以及第一绝缘层。 层叠体包括第一和第二半导体层和发光层。 第一和第二电极分别连接到第一和第二半导体层。 第一和第二互连分别连接到第一和第二电极。 第一和第二支柱分别连接到第一和第二互连。 第一绝缘层设置在互连和支柱上。 第一和第二支柱具有暴露在第一绝缘层的表面中的第一和第二监视器焊盘。 第一和第二互连具有暴露在与第一绝缘层的表面连接的侧面中的第一和第二接合焊盘。

公开(公告)号：US08987762B2

公开(公告)日：2015-03-24

申请号：US13607480

申请日：2012-09-07

申请人： Toshiya Nakayama ,  Kazuhito Higuchi ,  Hiroshi Koizumi ,  Hideo Nishiuchi ,  Susumu Obata ,  Akiya Kimura ,  Yoshiaki Sugizaki ,  Akihiro Kojima ,  Yosuke Akimoto

发明人： Toshiya Nakayama ,  Kazuhito Higuchi ,  Hiroshi Koizumi ,  Hideo Nishiuchi ,  Susumu Obata ,  Akiya Kimura ,  Yoshiaki Sugizaki ,  Akihiro Kojima ,  Yosuke Akimoto

IPC分类号： H01L33/50 ,  H01L33/56 ,  H01L33/54

CPC分类号： H01L33/56 ,  H01L27/15 ,  H01L33/502 ,  H01L33/505 ,  H01L33/508 ,  H01L33/54 ,  H01L2933/0041

摘要： According to one embodiment, a light-emitting unit which emits light, a wavelength conversion unit which includes a phosphor and which is provided on a main surface of the light-emitting unit, and a transparent resin which is provided on top of the wavelength conversion unit, are prepared. The transparent resin has a greater modulus of elasticity and/or a higher Shore hardness than the wavelength conversion unit.

摘要翻译： 根据一个实施例，发射光的发光单元，包括荧光体并设置在发光单元的主表面上的波长转换单元和设置在波长转换器顶部的透明树脂 单位，准备。 透明树脂具有比波长转换单元更大的弹性模量和/或更高的肖氏硬度。

公开(公告)号：US20130069102A1

公开(公告)日：2013-03-21

申请号：US13607418

申请日：2012-09-07

申请人： Akiya KIMURA ,  Kazuhito Higuchi ,  Hideo Nishiuchi ,  Susumu Obata ,  Toshiya Nakayama ,  Yoshiaki Sugizaki ,  Akihiro Kojima ,  Yosuke Akimoto

发明人： Akiya KIMURA ,  Kazuhito Higuchi ,  Hideo Nishiuchi ,  Susumu Obata ,  Toshiya Nakayama ,  Yoshiaki Sugizaki ,  Akihiro Kojima ,  Yosuke Akimoto

IPC分类号： H01L33/36

CPC分类号： H01L33/62 ,  H01L33/486 ,  H01L2924/0002 ,  H01L2933/0066 ,  H01L2924/00

摘要： A semiconductor light-emitting device includes a laminated body that is configured to emit light from a main surface thereof, first and second electrodes, each disposed on a surface of the laminated body that is opposite the main surface, a first terminal that is electrically coupled to the first electrode, has a concave edge but not a convex edge, and has at most three exposed sides, and a second terminal that is electrically coupled to the second electrode, has a concave edge but not a convex edge, and has at most three exposed sides.

摘要翻译： 一种半导体发光器件，包括被配置为从其主表面发光的层叠体，每个设置在层叠体的与主表面相对的表面上的第一和第二电极，电耦合的第一端子 具有凹形边缘但不具有凸边缘，并且具有至多三个外露侧面，并且电耦合到第二电极的第二端子具有凹形边缘但不具有凸起边缘，并且具有至多 三个暴露的一面。

公开(公告)号：US20120241792A1

公开(公告)日：2012-09-27

申请号：US13424687

申请日：2012-03-20

申请人： Susumu Obata ,  Kazuhito Higuchi ,  Hideo Nishiuchi ,  Akiya Kimura ,  Toshiya Nakayama ,  Yoshiaki Sugizaki ,  Akihiro Kojima ,  Yosuke Akimoto

发明人： Susumu Obata ,  Kazuhito Higuchi ,  Hideo Nishiuchi ,  Akiya Kimura ,  Toshiya Nakayama ,  Yoshiaki Sugizaki ,  Akihiro Kojima ,  Yosuke Akimoto

IPC分类号： H01L33/60 ,  H01L33/00

CPC分类号： H01L33/62 ,  H01L33/486 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

摘要： According to an embodiment, a semiconductor light emitting device includes a stacked body, first and second electrodes, first and second interconnections, first and second pillars and a first insulating layer. The stacked body includes first and second semiconductor layers and a light emitting layer. The first and second electrodes are connected to the first and second semiconductor layers respectively. The first and second interconnections are connected to the first and second electrode respectively. The first and second pillars are connected to the first and second interconnections respectively. The first insulating layer is provided on the interconnections and the pillars. The first and second pillars have first and second monitor pads exposed in a surface of the first insulating layer. The first and second interconnections have first and second bonding pads exposed in a side face connected with the surface of the first insulating layer.

摘要翻译： 根据实施例，半导体发光器件包括层叠体，第一和第二电极，第一和第二互连，第一和第二柱以及第一绝缘层。 层叠体包括第一和第二半导体层和发光层。 第一和第二电极分别连接到第一和第二半导体层。 第一和第二互连分别连接到第一和第二电极。 第一和第二支柱分别连接到第一和第二互连。 第一绝缘层设置在互连和支柱上。 第一和第二支柱具有暴露在第一绝缘层的表面中的第一和第二监视器焊盘。 第一和第二互连具有暴露在与第一绝缘层的表面连接的侧面中的第一和第二接合焊盘。

公开(公告)号：US20110300651A1

公开(公告)日：2011-12-08

申请号：US12888558

申请日：2010-09-23

申请人： Akihiro Kojima ,  Yoshiaki Sugizaki ,  Susumu Obata ,  Hideo Nishiuchi

发明人： Akihiro Kojima ,  Yoshiaki Sugizaki ,  Susumu Obata ,  Hideo Nishiuchi

IPC分类号： H01L33/44

CPC分类号： H01L33/0079 ,  H01L33/0075 ,  H01L33/486 ,  H01L2224/16 ,  H01L2933/0066

摘要： According to one embodiment, a method for manufacturing a light-emitting device is disclosed. The method can include forming a first electrode and a second electrode on a semiconductor layer which is included in a first structure body, the semiconductor layer including a light-emitting layer on a substrate. The method can include forming a first metal pillar in conduction with the first electrode, and a second metal pillar in conduction with the second electrode. The method can include filling a region between the first metal pillar and the second metal pillar with an insulating layer. In addition, the method can include separating the substrate from the semiconductor layer, and forming a second structure body in which the semiconductor layer is supported by the insulating layer and which is convex toward an opposite side of the insulating layer to the semiconductor layer.

摘要翻译： 根据一个实施例，公开了一种用于制造发光器件的方法。 该方法可以包括在包括在第一结构体中的半导体层上形成第一电极和第二电极，该半导体层包括在基板上的发光层。 该方法可以包括形成与第一电极导通的第一金属柱和与第二电极导通的第二金属柱。 该方法可以包括用绝缘层填充第一金属柱和第二金属柱之间的区域。 此外，该方法可以包括从半导体层分离衬底，以及形成第二结构体，其中半导体层被绝缘层支撑并且朝向绝缘层的与半导体层相反的一侧凸出。

公开(公告)号：US08754429B2

公开(公告)日：2014-06-17

申请号：US13154999

申请日：2011-06-07

申请人： Hiroshi Koizumi ,  Yasuhide Okada ,  Susumu Obata ,  Tomomichi Naka ,  Kazuhito Higuchi ,  Kazuo Shimokawa ,  Yoshiaki Sugizaki ,  Akihiro Kojima

发明人： Hiroshi Koizumi ,  Yasuhide Okada ,  Susumu Obata ,  Tomomichi Naka ,  Kazuhito Higuchi ,  Kazuo Shimokawa ,  Yoshiaki Sugizaki ,  Akihiro Kojima

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/44 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/50 ,  H01L33/58 ,  H01L33/62 ,  H01L2224/16 ,  H01L2933/0058

摘要： According to one embodiment, an optical semiconductor device includes a light emitting layer, a transparent layer, a first metal post, a second metal post and a sealing layer. The light emitting layer includes a first and a second major surface, a first and a second electrode. The second major surface is a surface opposite to the first major surface, and the first electrode and second electrodes are formed on the second major surface. The transparent layer is provided on the first major surface. The first metal post is provided on the first electrode. The second metal post is provided on the second electrode. The sealing layer is provided on the second major surface. The sealing layer covers a side surface of the light emitting layer and seals the first and second metal posts while leaving end portions of the first and second metal posts exposed.

摘要翻译： 根据一个实施例，光学半导体器件包括发光层，透明层，第一金属柱，第二金属柱和密封层。 发光层包括第一和第二主表面，第一和第二电极。 第二主表面是与第一主表面相对的表面，并且第一电极和第二电极形成在第二主表面上。 透明层设置在第一主表面上。 第一金属柱设置在第一电极上。 第二金属柱设置在第二电极上。 密封层设置在第二主表面上。 密封层覆盖发光层的侧表面，并且密封第一和第二金属柱，同时使第一和第二金属柱的端部露出。

公开(公告)号：US09153746B2

公开(公告)日：2015-10-06

申请号：US13601568

申请日：2012-08-31

申请人： Akihiro Kojima ,  Yosuke Akimoto ,  Hideyuki Tomizawa ,  Hideko Mukaida ,  Miyoko Shimada ,  Yoshiaki Sugizaki ,  Hideto Furuyama

发明人： Akihiro Kojima ,  Yosuke Akimoto ,  Hideyuki Tomizawa ,  Hideko Mukaida ,  Miyoko Shimada ,  Yoshiaki Sugizaki ,  Hideto Furuyama

IPC分类号： H01L33/52 ,  H01L33/00 ,  H01L33/38 ,  H01L21/50

CPC分类号： H01L33/486 ,  H01L33/387 ,  H01L33/62

摘要： According to an embodiment, a semiconductor light emitting device includes a semiconductor layer having a light emitting layer. The device also includes a p-side electrode provided on a first region including the light emitting layer; an n-side electrode provided on a second region layer not including the light emitting layer; and a first insulating film having a first opening communicating with the p-side electrode and a second opening communicating with the n-side electrode. A p-side interconnection is provided on the first insulating film and electrically connected to the p-side electrode through the first opening. An n-side interconnection is provided on the first insulating film and electrically connected to the n-side electrode through the second opening. The p-side interconnection has a plurality of protrusive parts protruding toward the n-side interconnection, and the n-side interconnection has a plurality of portions extending between the protrusive parts of the p-side interconnection.

摘要翻译： 根据实施例，半导体发光器件包括具有发光层的半导体层。 该装置还包括设置在包括发光层的第一区域上的p侧电极; 设置在不包括发光层的第二区域层上的n侧电极; 以及具有与p侧电极连通的第一开口的第一绝缘膜和与n侧电极连通的第二开口。 p侧互连设置在第一绝缘膜上，并通过第一开口与p侧电极电连接。 n侧互连设置在第一绝缘膜上，并通过第二开口与n侧电极电连接。 p侧互连具有向n侧互连突出的多个突出部，并且n侧互连具有在p侧互连的突出部之间延伸的多个部分。

公开(公告)号：US09099619B2

公开(公告)日：2015-08-04

申请号：US13419684

申请日：2012-03-14

申请人： Hiroshi Koizumi ,  Naoaki Sakurai ,  Yoshiaki Sugizaki ,  Yasuhide Okada ,  Tomomichi Naka ,  Masahiro Uekita ,  Akihiro Kojima ,  Yosuke Akimoto

发明人： Hiroshi Koizumi ,  Naoaki Sakurai ,  Yoshiaki Sugizaki ,  Yasuhide Okada ,  Tomomichi Naka ,  Masahiro Uekita ,  Akihiro Kojima ,  Yosuke Akimoto

IPC分类号： H01L29/20 ,  H01L21/00 ,  H01L33/50 ,  H01L33/00

CPC分类号： H01L33/508 ,  H01L33/0079 ,  H01L33/504 ,  H01L33/505 ,  H01L2933/0016 ,  H01L2933/0041

摘要： According to one embodiment, a semiconductor light emitting device includes a light emitting section and a wavelength conversion section. The light emitting section is configured to emit light. The wavelength conversion section is provided on one major surface side of the light emitting section. The wavelength conversion section contains a phosphor. The wavelength conversion section has a distribution of amount of the phosphor based on a distribution of wavelength of the light emitted from the light emitting section.

摘要翻译： 根据一个实施例，半导体发光器件包括发光部分和波长转换部分。 发光部被配置为发光。 波长转换部设置在发光部的一个主表面侧。 波长转换部分包含磷光体。 波长转换部分具有基于从发光部分发射的光的波长分布的荧光体的量的分布。

公开(公告)号：US08399275B2

公开(公告)日：2013-03-19

申请号：US13153554

申请日：2011-06-06

申请人： Yosuke Akimoto ,  Akihiro Kojima ,  Miyuki Izuka ,  Yoshiaki Sugizaki ,  Hiroshi Koizumi ,  Tomomichi Naka ,  Yasuhide Okada

发明人： Yosuke Akimoto ,  Akihiro Kojima ,  Miyuki Izuka ,  Yoshiaki Sugizaki ,  Hiroshi Koizumi ,  Tomomichi Naka ,  Yasuhide Okada

IPC分类号： H01L21/00

CPC分类号： H01L33/508 ,  H01L25/0753 ,  H01L33/0079 ,  H01L33/486 ,  H01L33/502 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2933/0066 ,  H01L2924/00

摘要： According to one embodiment, a method for manufacturing a semiconductor light emitting device is disclosed. The method can include forming a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, a second insulating layer, a transparent material and a phosphor layer. The transparent material is formed on the first major surface of a semiconductor layer selected from the plurality of semiconductor layers on the basis of an emission spectrum of a light obtained from the first major surface side. The transparent material transmits the light. The phosphor layer is formed on the transparent material and the first major surface of the plurality of the semiconductor layers.

摘要翻译： 根据一个实施例，公开了一种制造半导体发光器件的方法。 该方法可以包括形成第一互连层，第二互连层，第一金属柱，第二金属柱，第二绝缘层，透明材料和磷光体层。 基于从第一主面侧获得的光的发射光谱，在从多个半导体层中选择的半导体层的第一主表面上形成透明材料。 透明材料透光。 荧光体层形成在透明材料和多个半导体层的第一主表面上。

公开(公告)号：US20110300644A1

公开(公告)日：2011-12-08

申请号：US13153554

申请日：2011-06-06

申请人： Yosuke Akimoto ,  Akihiro Kojima ,  Miyuki Izuka ,  Yoshiaki Sugizaki ,  Hiroshi Koizumi ,  Tomomichi Naka ,  Yasuhide Okada

发明人： Yosuke Akimoto ,  Akihiro Kojima ,  Miyuki Izuka ,  Yoshiaki Sugizaki ,  Hiroshi Koizumi ,  Tomomichi Naka ,  Yasuhide Okada

IPC分类号： H01L21/66

CPC分类号： H01L33/508 ,  H01L25/0753 ,  H01L33/0079 ,  H01L33/486 ,  H01L33/502 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2933/0066 ,  H01L2924/00

摘要： According to one embodiment, a method for manufacturing a semiconductor light emitting device is disclosed. The method can include forming a first interconnect layer, a second interconnect layer, a first metal pillar, a second metal pillar, a second insulating layer, a transparent material and a phosphor layer. The transparent material is formed on the first major surface of a semiconductor layer selected from the plurality of semiconductor layers on the basis of an emission spectrum of a light obtained from the first major surface side. The transparent material transmits the light. The phosphor layer is formed on the transparent material and the first major surface of the plurality of the semiconductor layers.

摘要翻译： 根据一个实施例，公开了一种制造半导体发光器件的方法。 该方法可以包括形成第一互连层，第二互连层，第一金属柱，第二金属柱，第二绝缘层，透明材料和磷光体层。 基于从第一主面侧获得的光的发射光谱，在从多个半导体层中选择的半导体层的第一主表面上形成透明材料。 透明材料透光。 荧光体层形成在透明材料和多个半导体层的第一主表面上。