公开(公告)号：US06299692B1

公开(公告)日：2001-10-09

申请号：US09621335

申请日：2000-07-21

申请人： Vincent Ku ,  Ming Xi ,  Xiaoxiong Yuan ,  Anzhong Chang ,  Anh N. Nguyen

发明人： Vincent Ku ,  Ming Xi ,  Xiaoxiong Yuan ,  Anzhong Chang ,  Anh N. Nguyen

IPC分类号： C23C1600

CPC分类号： C23C16/4485

摘要： A vaporizer head for evenly flowing at low pressure into a processing chamber vaporized precursor compounds for deposition of metal and other layers onto a semiconductor, has a bulb-like body with a center axis, a lengthwise cavity, an input end and an output end. The cavity has an opening for receiving a stream of vaporized precursor compound. There are a plurality of passages for flow of vapor through the head, each passage having a length and a diameter. They extend radially from along and around the cavity like the spokes of a wheel at inclined angles relative to the center axis from the cavity to a tapered output surface of the head. The cavity has a well-like bottom for capturing any droplets or particles of precursor compound and preventing them from leaving the head except as vapor. The plurality of passages have sufficiently large diameters such that there is only a low pressure drop in the vapor flowing through the head.

摘要翻译： 将用于在低压下均匀流动到处理室中的蒸发器头部具有用于将金属和其它层沉积到半导体上的蒸发的前体化合物具有具有中心轴，纵向腔，输入端和输出端的灯泡状体。 空腔具有用于接收蒸发的前体化合物流的开口。 存在多个用于蒸汽流过头部的通道，每个通道具有长度和直径。 它们相对于从中心轴线到中心轴线的倾斜角度，沿着腔体的周边和周围径向延伸，如同轮的轮辐一样沿径向延伸到头部的锥形输出表面。 空腔具有良好的底部，用于捕获前体化合物的任何液滴或颗粒，并防止它们离开头部，除了作为蒸气。 多个通道具有足够大的直径，使得在流过头部的蒸气中只有低压降。

公开(公告)号：US06211065B1

公开(公告)日：2001-04-03

申请号：US08948799

申请日：1997-10-10

申请人： Ming Xi ,  Eugene Tzou ,  Lie-Yea Cheng ,  Turgut Sahin ,  Yaxin Wang

发明人： Ming Xi ,  Eugene Tzou ,  Lie-Yea Cheng ,  Turgut Sahin ,  Yaxin Wang

IPC分类号： C23C1622

CPC分类号： B05D1/62 ,  C23C16/0272 ,  C23C16/0281 ,  C23C16/26

摘要： The present invention provides a method of depositing an amorphous fluorocarbon film using a high bias power applied to the substrate on which the material is deposited. The invention contemplates flowing a carbon precursor at rate and at a power level so that equal same molar ratios of a carbon source is available to bind the fragmented fluorine in the film thereby improving film quality while also enabling improved gap fill performance. The invention further provides for improved adhesion of the amorphous fluorocarbon film to metal surfaces by first depositing a metal or TiN adhesion layer on the metal surfaces and then stuffing the surface of the deposited adhesion layer with nitrogen. Adhesion is further improved by coating the chamber walls with silicon nitride or silicon oxynitride.

摘要翻译： 本发明提供了一种使用施加到其上沉积材料的衬底的高偏置功率沉积非晶碳氟化合物膜的方法。 本发明考虑了以速率和功率水平流动碳前体，使得碳源的相等摩尔比可用于结合薄膜中的碎裂氟，从而提高膜质量，同时还实现改进的间隙填充性能。 本发明进一步提供了通过首先在金属表面上沉积金属或TiN粘附层，然后用氮气填充沉积的粘合层的表面来改善非晶碳氟化合物膜对金属表面的粘合性。 通过用氮化硅或氮氧化硅涂覆室壁来进一步改善粘合性。

公开(公告)号：US08518210B2

公开(公告)日：2013-08-27

申请号：US13562421

申请日：2012-07-31

申请人： Eugene Smargiassi ,  Stephen Yu-Hong Lau ,  George D. Kamian ,  Ming Xi

发明人： Eugene Smargiassi ,  Stephen Yu-Hong Lau ,  George D. Kamian ,  Ming Xi

IPC分类号： C23F1/00 ,  H01L21/306

CPC分类号： H01L21/67115 ,  H01L21/02041 ,  H01L21/02203 ,  H01L21/02348 ,  H01L21/67017 ,  H01L21/6719 ,  H01L21/67207

摘要： An apparatus for purging a space in a processing chamber comprises a source of a purge gas; an inlet portion of a purge ring; an inlet baffle located in the inlet portion and fluidically connected to the source of purge gas; and an exhaust portion of the purge ring. The inlet portion and the exhaust portion define a ring hole space having a 360° periphery. The inlet baffle preferably surrounds not less than 180° of said periphery. The inlet baffle is operable to convey purge gas into the ring hole space. The exhaust portion is operable to convey purge gas and other matter out of the ring hole space. Cleaning of the purge ring and other structures in a processing chamber is conducted by flowing a cleaning gas through the inlet baffle. Some embodiments include a gas inlet plenum and an exhaust channel but not a purge ring.

摘要翻译： 用于清洗处理室中的空间的装置包括净化气体源; 清洗环的入口部分; 入口挡板，其位于入口部分中并且流体连接到吹扫气体源; 和净化环的排气部分。 入口部分和排气部分限定具有360°周边的环孔空间。 入口挡板优选地围绕所述周边不小于180°。 入口挡板可操作以将清洗气体输送到环孔空间中。 排气部分可操作以将净化气体和其它物质输送出环孔空间。 通过使清洁气体流过入口挡板来进行清洁环和处理室中的其它结构的清洁。 一些实施例包括气体入口增压室和排气通道，但不包括净化环。

公开(公告)号：US20110100295A1

公开(公告)日：2011-05-05

申请号：US12987962

申请日：2011-01-10

申请人： Ming Xi ,  Michael Yang ,  Hui Zhang

发明人： Ming Xi ,  Michael Yang ,  Hui Zhang

IPC分类号： C23C16/52 ,  C23C16/455

CPC分类号： H01L21/76846 ,  H01L21/28562 ,  H01L28/75 ,  H01L28/84 ,  H01L28/90

摘要： An apparatus for processing a substrate is provided. The apparatus includes a process chamber, and a dual-mode gas distribution plate disposed within the process chamber. The dual-mode gas distribution plate comprises a first gas distribution zone disposed in a center of the gas distribution plate, and a second gas distribution zone surrounding the first gas distribution zone, the second gas distribution zone being fluidly isolated from the first gas distribution zone, wherein the first gas distribution zone is coupled to a valve system to deliver sequential pulses of a first gas to the first gas distribution zone to perform a cyclical deposition process, and the second gas distribution zone is in communication with a flow controller to deliver a second gas to perform a chemical vapor deposition process.

摘要翻译： 提供了一种用于处理衬底的设备。 该装置包括处理室和设置在处理室内的双模气体分配板。 双模式气体分配板包括设置在气体分配板的中心的第一气体分配区和围绕第一气体分配区的第二气体分配区，第二气体分配区与第一气体分配区流体隔离 ，其中所述第一气体分配区域联接到阀系统以将第一气体的顺序脉冲输送到所述第一气体分配区域以执行循环沉积过程，并且所述第二气体分配区域与流量控制器连通以递送 第二气体进行化学气相沉积工艺。

公开(公告)号：US20060292864A1

公开(公告)日：2006-12-28

申请号：US11458852

申请日：2006-07-20

申请人： Michael Yang ,  Toshio Itoh ,  Ming Xi

发明人： Michael Yang ,  Toshio Itoh ,  Ming Xi

IPC分类号： H01L21/44

CPC分类号： C23C16/45531 ,  C23C16/06 ,  C23C16/34 ,  C23C16/42 ,  C23C16/452 ,  C23C16/45529 ,  C23C16/45542 ,  C23C16/45565 ,  C23C16/5096 ,  C23C16/515 ,  C23C16/54 ,  H01J37/32082 ,  H01J37/3244 ,  H01L21/02153 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76856

摘要： In one embodiment, a method for forming a metal-containing material on a substrate is provided which includes forming a metal containing barrier layer on a substrate by a plasma-enhanced cyclical vapor deposition process, exposing the substrate to a soak process, and depositing a conductive material on the substrate by a second vapor deposition process. The substrate may be exposed to a silicon-containing compound (e.g., silane) during the soak process. In some examples, a metallic nitride layer may be deposited subsequent to the soak process and prior to the second vapor deposition process. In other examples, the metal containing barrier layer contains metallic titanium, the metallic nitride layer contains titanium nitride, and the conductive material contains tungsten or copper. The plasma-enhanced cyclical vapor deposition process may further include exposing the substrate to a nitrogen precursor, such as nitrogen, hydrogen, a nitrogen/hydrogen mixture, ammonia, hydrazine, or derivatives thereof.

摘要翻译： 在一个实施例中，提供了一种用于在衬底上形成含金属材料的方法，其包括通过等离子体增强循环气相沉积工艺在衬底上形成含金属的阻挡层，将衬底暴露于浸泡工艺，并沉积 通过第二气相沉积工艺在衬底上形成导电材料。 在浸泡过程期间，可将基底暴露于含硅化合物（例如硅烷）。 在一些实例中，金属氮化物层可以在浸泡工艺之后并在第二气相沉积工艺之前沉积。 在其他实例中，含金属阻挡层含有金属钛，金属氮化物层含有氮化钛，导电材料含有钨或铜。 等离子体增强的循环气相沉积方法还可以包括将底物暴露于氮前体，例如氮，氢，氮/氢混合物，氨，肼或其衍生物。

公开(公告)号：US20050277290A1

公开(公告)日：2005-12-15

申请号：US11151699

申请日：2005-06-13

申请人： Michael Yang ,  Toshio Itoh ,  Ming Xi

发明人： Michael Yang ,  Toshio Itoh ,  Ming Xi

IPC分类号： C23C16/06 ,  C23C16/34 ,  C23C16/42 ,  C23C16/44 ,  C23C16/452 ,  C23C16/455 ,  C23C16/515 ,  H01J37/32 ,  H01L21/285 ,  H01L21/312 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/44

CPC分类号： C23C16/45531 ,  C23C16/06 ,  C23C16/34 ,  C23C16/42 ,  C23C16/452 ,  C23C16/45529 ,  C23C16/45542 ,  C23C16/45565 ,  C23C16/5096 ,  C23C16/515 ,  C23C16/54 ,  H01J37/32082 ,  H01J37/3244 ,  H01L21/02153 ,  H01L21/02271 ,  H01L21/0228 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/3122 ,  H01L21/3127 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L21/76856

摘要： Embodiments of the invention generally relate to an apparatus and method of integration of titanium and titanium nitride layers. One embodiment includes providing one or more cycles of a first set of compounds such as a titanium precursor and a reductant, providing one or more cycles of a second set of compounds such as the titanium precursor and a silicon precursor and providing one or more cycles of a third set of compounds such as the titanium precursor and a nitrogen precursor. Another embodiment includes depositing a titanium layer on a substrate, depositing a passivation layer containing titanium silicide, titanium silicon nitride or combinations thereof over the titanium layer and subsequently depositing a titanium nitride layer over the passivation layer. Still another embodiment comprises depositing a titanium layer on a substrate, soaking the titanium layer with a silicon precursor and subsequently depositing a titanium nitride layer thereon.

摘要翻译： 本发明的实施方案一般涉及钛和氮化钛层的集成的装置和方法。 一个实施方案包括提供第一组化合物例如钛前体和还原剂的一个或多个循环，提供第二组化合物例如钛前体和硅前体的一个或多个循环，并提供一个或多个循环的 第三组化合物如钛前体和氮前体。 另一实施例包括在衬底上沉积钛层，在钛层上沉积含有硅化钛，氮化钛或其组合的钝化层，随后在钝化层上沉积氮化钛层。 另一个实施例包括在衬底上沉积钛层，用钛前体浸泡钛层，随后在其上沉积氮化钛层。

公开(公告)号：US20050164487A1

公开(公告)日：2005-07-28

申请号：US11088072

申请日：2005-03-23

申请人： Sean Seutter ,  Michael Yang ,  Ming Xi

发明人： Sean Seutter ,  Michael Yang ,  Ming Xi

IPC分类号： C23C16/34 ,  C23C16/44 ,  C23C16/455 ,  C23C16/56 ,  H01L21/285 ,  H01L21/768 ,  H01L21/4763 ,  H01L21/44 ,  H01L21/8242

CPC分类号： C23C16/45553 ,  C23C16/34 ,  C23C16/4554 ,  C23C16/56 ,  H01L21/28562 ,  H01L21/28568 ,  H01L21/76844 ,  H01L21/76862

摘要： A method of forming a tantalum nitride layer for integrated circuit fabrication is disclosed. In one embodiment, the method includes forming a tantalum nitride layer by chemisorbing a tantalum precursor and a nitrogen precursor on a substrate disposed in a process chamber. A nitrogen concentration of the tantalum nitride layer is reduced by exposing the substrate to a plasma annealing process. A metal-containing layer is then deposited on the tantalum nitride layer by a deposition process.

摘要翻译： 公开了一种形成用于集成电路制造的氮化钽层的方法。 在一个实施例中，该方法包括通过在设置在处理室中的衬底上化学吸附钽前体和氮前体来形成氮化钽层。 氮化钽层的氮浓度通过将衬底暴露于等离子体退火工艺而降低。 然后通过沉积工艺将含金属的层沉积在氮化钽层上。

公开(公告)号：US06624064B1

公开(公告)日：2003-09-23

申请号：US08948895

申请日：1997-10-10

申请人： Turgut Sahin ,  Yaxin Wang ,  Ming Xi

发明人： Turgut Sahin ,  Yaxin Wang ,  Ming Xi

IPC分类号： C23C1634

CPC分类号： H01L21/02304 ,  C23C16/4404 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/312 ,  H01L21/76837

摘要： The present invention provides a method of depositing an amorphous fluorocarbon film using a high bias power applied to the substrate on which the material is deposited. The invention contemplates flowing a carbon precursor at rate and at a power level so that equal same molar ratios of a carbon source is available to bind the fragmented fluorine in the film thereby improving film quality while also enabling improved gap fill performance. The invention further provides for improved adhesion of the amorphous fluorocarbon film to metal surfaces by first depositing a metal or TiN adhesion layer on the metal surfaces and then stuffing the surface of the deposited adhesion layer with nitrogen. Adhesion is further improved by coating the chamber walls with silicon nitride or silicon oxynitride.

摘要翻译： 本发明提供了一种使用施加到其上沉积材料的衬底的高偏置功率沉积非晶碳氟化合物膜的方法。 本发明考虑了以速率和功率水平流动碳前体，使得碳源的相等摩尔比可用于结合薄膜中的碎裂氟，从而提高膜质量，同时还实现改进的间隙填充性能。 本发明进一步提供了通过首先在金属表面上沉积金属或TiN粘附层，然后用氮气填充沉积的粘合层的表面来改善非晶碳氟化合物膜对金属表面的粘合性。 通过用氮化硅或氮氧化硅涂覆室壁来进一步改善粘合性。

公开(公告)号：US06323119B1

公开(公告)日：2001-11-27

申请号：US08948890

申请日：1997-10-10

申请人： Ming Xi ,  Turgut Sahin ,  Yaxin Wang

发明人： Ming Xi ,  Turgut Sahin ,  Yaxin Wang

IPC分类号： C23C1634

CPC分类号： H01L21/02304 ,  C23C16/0272 ,  C23C16/26 ,  H01L21/0212 ,  H01L21/02274 ,  H01L21/312 ,  H01L21/76837 ,  H01L21/76856

摘要： The present invention provides a method of depositing an amorphous fluorocarbon film using a high bias power applied to the substrate on which the material is deposited. The invention contemplates flowing a carbon precursor at rate and at a power level so that equal same molar ratios of a carbon source is available to bind the fragmented fluorine in the film thereby improving film quality while also enabling improved gap fill performance. The invention further provides for improved adhesion of the amorphous fluorocarbon film to metal surfaces by first depositing a metal or TiN adhesion layer on the metal surfaces and then stuffing the surface of the deposited adhesion layer with nitrogen. Adhesion is further improved by coating the chamber walls with silicon nitride or silicon oxynitride.

摘要翻译： 本发明提供了一种使用施加到其上沉积材料的衬底的高偏置功率沉积非晶碳氟化合物膜的方法。 本发明考虑了以速率和功率水平流动碳前体，使得碳源的相等摩尔比可用于结合薄膜中的碎裂氟，从而提高膜质量，同时还实现改进的间隙填充性能。 本发明进一步提供了通过首先在金属表面上沉积金属或TiN粘附层，然后用氮气填充沉积的粘合层的表面来改善非晶碳氟化合物膜对金属表面的粘合性。 通过用氮化硅或氮氧化硅涂覆室壁来进一步改善粘合性。

公开(公告)号：US5849092A

公开(公告)日：1998-12-15

申请号：US805459

申请日：1997-02-25

申请人： Ming Xi ,  Kazuhiro Nishina ,  Steve (Aihua) Chen ,  Toshiaki Fujita

发明人： Ming Xi ,  Kazuhiro Nishina ,  Steve (Aihua) Chen ,  Toshiaki Fujita

IPC分类号： C23C16/44 ,  C23F4/00 ,  H01J37/32 ,  H01L21/205 ,  H01L21/285 ,  B08B7/00 ,  B08B9/00

CPC分类号： H01J37/32862 ,  C23C16/4405 ,  Y10S438/905

摘要： A method for removing particles and residue that build up inside a substrate processing system during a substrate processing operation, without overetching system components, is described. One method includes the steps of: flowing an etchant gas comprising chlorine trifluoride (CIF.sub.3), diluted with an inert carrier gas, into a processing chamber after completion of the substrate processing operation. The parts of the system within the chamber with the greatest amount of build-up are preferentially heated to facilitate more extensive cleaning of those parts. Parts of the system within the chamber with less build up are protected from overetching by keeping them about 200.degree. C. cooler than the heavily-deposited parts. Heating the heavily-deposited chamber parts to a temperature of at least about 400.degree. C. allows using a lower concentration of etchant gas for the cleaning process than a lower temperature process would allow. The etchant gas reacts with both particles and residue in the chamber, reducing both particulate-related defects and deposition build-up. Another method includes blanketing lightly-deposited areas of the chamber with a nonreactive gas to displace and dilute the etchant gas from these areas for part of the cleaning process, while heavily-deposited areas are exposed to a higher concentration of the etchant gas for a longer period of time. The blanketing gas is turned off for another part of the cleaning process so that these areas are also cleaned.

摘要翻译： 描述了在基板处理操作期间在基板处理系统内积聚的颗粒和残余物的清除方法，而不用过滤系统部件。 一种方法包括以下步骤：在完成基板处理操作之后，使包含用惰性载气稀释的三氟化氯（CIF3）的蚀刻剂气体流入处理室。 具有最大累积量的室内的系统部分被优先加热以便于对这些部件进行更广泛的清洁。 室内较少堆积的室内部分系统通过保持其比重沉积部分冷却约200℃来保护免于过蚀刻。 将重沉积的室部件加热到至少约400℃的温度，允许使用较低浓度的蚀刻剂气体用于清洁过程，而不是较低温度过程将允许。 蚀刻剂气体与室中的颗粒和残余物反应，减少了颗粒相关缺陷和沉积物积聚。 另一种方法包括用非反应性气体覆盖室内轻度沉积的区域，以便从这些区域置换和稀释蚀刻剂气体用于部分清洁过程，同时沉积的区域暴露于较高浓度的蚀刻剂气体较长时间 一段的时间。 对于清洁过程的另一部分，遮盖气体被关闭，使得这些区域也被清洁。