公开(公告)号：US20090166607A1

公开(公告)日：2009-07-02

申请号：US12227694

申请日：2006-05-26

申请人： Ken Nakahara ,  Norikazu Ito ,  Kazuaki Tsutsumi

发明人： Ken Nakahara ,  Norikazu Ito ,  Kazuaki Tsutsumi

IPC分类号： H01L33/00

CPC分类号： H01L33/32 ,  H01L33/02 ,  H01L33/06

摘要： Provided is a nitride semiconductor light emitting element having an improved carrier injection efficiency from a p-type nitride semiconductor layer to an active layer by simple means from a viewpoint utterly different from the prior art. A buffer layer 2, an undoped GaN layer 3, an n-type GaN contact layer 4, an InGaN/GaN superlattice layer 5, an active layer 6, a first undoped InGaN layer 7, a second undoped InGaN layer 8, and a p-type Gan-based contact layer 9 are stacked on a sapphire substrate 1. A p-electrode 10 is formed on the p-type Gan-based contact layer 9. An n-electrode 11 is formed on a surface where the n-type GaN contact layer 4 is exposed as a result of mesa-etching. The first undoped InGaN layer 7 is formed to contact a well layer closest to a p-side in the active layer having a quantum well structure, and subsequently the second undoped InGaN layer 8 is formed thereon. The carrier injection efficiency into the active layer 6 can be improved by making the total film thickness of the first and second undoped InGaN layers 20 nm or less.

摘要翻译： 提供了从与现有技术完全不同的观点，通过简单的手段，具有从p型氮化物半导体层到活性层的载流子注入效率提高的氮化物半导体发光元件。 缓冲层2，未掺杂的GaN层3，n型GaN接触层4，InGaN / GaN超晶格层5，有源层6，第一未掺杂的InGaN层7，第二未掺杂的InGaN层8和p 型的Gan型接触层9层叠在蓝宝石基板1上。在p型Gan型接触层9上形成p电极10.在n型电极11的表面上形成n电极11， 作为台面蚀刻的结果，GaN接触层4被暴露。 第一未掺杂的InGaN层7形成为与具有量子阱结构的有源层中最靠近p侧的阱层接触，随后在其上形成第二未掺杂的InGaN层8。 通过使第一和第二未掺杂的InGaN层的总膜厚度达到20nm以下，能够提高进入有源层6的载流子注入效率。

公开(公告)号：US20090068779A1

公开(公告)日：2009-03-12

申请号：US11920043

申请日：2006-05-08

申请人： Ken Nakahara

发明人： Ken Nakahara

IPC分类号： H01L33/00 ,  H01L21/338

CPC分类号： H01L33/0095 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02507 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/268 ,  H01L29/66462 ,  H01L33/305

摘要： There is provided a method for manufacturing a nitride semiconductor device which has a p-type nitride semiconductor layer having a high carrier concentration (low resistance) by activating an acceptor without raising a problem of forming nitrogen vacancies which are generated when a high temperature annealing is carried out over an extended time. A semiconductor lamination portion (6) made of nitride semiconductor is formed on a substrate (1) so as to form a light emitting layer, and irradiated by a laser beam having a wavelength λ of λ=h*c/E or less (E is energy capable of separating off the bonding between Mg and H) from the front surface side of the semiconductor lamination portion. Then, a heat treatment is carried out at a temperature of 300 to 400° C. And, similarly to a process for normal nitride semiconductor LED, a light transmitting conductive layer (7) is provided, an n-side electrode (9) is formed on an n-type layer (3) exposed by removing a part of the semiconductor lamination portion by etching, and a p-side electrode (8) is formed on a surface of the light transmitting conductive layer, thereby a LED is obtained.

摘要翻译： 提供了一种通过激活受主而具有具有高载流子浓度（低电阻）的p型氮化物半导体层的氮化物半导体器件的制造方法，而不会产生当高温退火时产生的形成氮空位的问题 进行了漫长的时间。 在衬底（1）上形成由氮化物半导体制成的半导体层压部分（6），以形成发光层，并用波长λ= h * c / E或更小的激光束（E 是能够分离Mg和H）之间的结合的能量与半导体层叠部分的前表面侧。 然后，在300〜400℃的温度下进行热处理。与普通氮化物半导体LED的工序相同，设置透光导电层（7），n侧电极（9）为 形成在通过蚀刻去除一部分半导体层叠部分而露出的n型层（3）上，并且在透光导电层的表面上形成p侧电极（8），由此获得LED。

公开(公告)号：US20090029499A1

公开(公告)日：2009-01-29

申请号：US12086883

申请日：2006-12-20

申请人： Ken Nakahara

发明人： Ken Nakahara

IPC分类号： H01L33/00

CPC分类号： H01L33/0095 ,  H01L21/78 ,  H01L27/15 ,  H01L33/32

摘要： Provided is a method for manufacturing a nitride semiconductor light emitting element. In the method, when an isolation trench for chip isolation and for laser lift-off is formed, a degradation-free nitride semiconductor light emitting element with high luminance can be formed without doing any damages to a light emitting region. In an n type nitride semiconductor layer 2, a step A is formed in a region beyond an active layer 3 looked from a p side. A protective insulating film 6 covers, to a portion of the step A, side surfaces of a part of the n type nitride semiconductor layer 2, the active layer 3, a p type nitride semiconductor layer 4, and a p electrode 5 as well as a part of an upper side of the p electrode 5. With a structure in which side surfaces of a chip are covered with the protective insulating film 6, when the isolation trench for chip isolation and for laser lift-off is formed using etching, the active layer 3 and the like are not exposed to etching gas for a long time.

摘要翻译： 提供了一种用于制造氮化物半导体发光元件的方法。 在该方法中，当形成用于芯片隔离和用于激光剥离的隔离沟槽时，可以形成具有高亮度的无劣质氮化物半导体发光元件，而不会对发光区域造成任何损害。 在n型氮化物半导体层2中，在从p侧观察的有源层3以外的区域形成工序A。 保护绝缘膜6向步骤A的一部分覆盖n型氮化物半导体层2，有源层3，p型氮化物半导体层4和p型电极5的一部分的侧面以及部分 通过利用保护绝缘膜6覆盖芯片的侧面的结构，当使用蚀刻形成用于芯片隔离和激光剥离的隔离沟槽时，有源层 3等不长时间暴露于蚀刻气体。

公开(公告)号：US20060193233A1

公开(公告)日：2006-08-31

申请号：US11371669

申请日：2006-03-09

申请人： Yoshikazu Fujimori ,  Ken Nakahara ,  Takashi Nakamura

发明人： Yoshikazu Fujimori ,  Ken Nakahara ,  Takashi Nakamura

IPC分类号： G11B7/00

CPC分类号： G09G3/20 ,  G02F1/13624 ,  G09G2300/0809 ,  G09G2300/0857 ,  G11C13/04

摘要： A light control apparatus including a plurality of two-dimensionally arranged pixels, each of the plurality of pixels comprising a first storage element which stores a luminance value of a present frame for the pixel; a second storage element which stores a preliminary luminance value for the pixel; and a switching element which changes the luminance value for the pixel by transferring the luminance value stored in the second storage element to the first storage element.

摘要翻译： 一种光控制装置，包括多个二维排列的像素，所述多个像素中的每一个包括存储所述像素的当前帧的亮度值的第一存储元件; 存储所述像素的预备亮度值的第二存储元件; 以及通过将存储在第二存储元件中的亮度值传送到第一存储元件来改变像素的亮度值的开关元件。

公开(公告)号：US06711198B1

公开(公告)日：2004-03-23

申请号：US09549552

申请日：2000-04-14

申请人： Jun Ichihara ,  Hisayoshi Kitajima ,  Tetsuhiro Tanabe ,  Ken Nakahara ,  Haruo Tanaka

发明人： Jun Ichihara ,  Hisayoshi Kitajima ,  Tetsuhiro Tanabe ,  Ken Nakahara ,  Haruo Tanaka

IPC分类号： H01S500

CPC分类号： H01S5/2231 ,  H01S5/06216 ,  H01S5/221 ,  H01S5/2219

摘要： A light source device for a laser beam printer in which a semiconductor laser is driven with a pulse current having a minimum pulse width at the ON time on the order of milliseconds or less is provided, wherein the semiconductor laser is formed so that either the rate of change at the rise portion of the pulse current becomes ±8% or less or the semiconductor laser is excited in a multiple mode in the vicinity of the threshold value of the oscillation, and the semiconductor laser oscillates in a single mode at a current separated from the threshold value, by adjusting of at least one of the width w of a stripe groove (7a) of the current block layer, the composition of clad layers (5), the distance d between the current block layer (7) and the active layer (4), the composition of the current block layer (7) and the formation of a light absorption layer into the current block layer (7). As a consequence, in the case where the light source device for the laser beam printer is driven with a short drive pulse on the order of several hundred micro seconds, the light source device becomes such that a transient phenomenon is not generated at the time of the rise of the pulse and a stable light output can be obtained.

摘要翻译： 提供了一种激光束打印机的光源装置，其中半导体激光器以在几毫秒或更小的导通时间具有最小脉冲宽度的脉冲电流驱动，其中半导体激光器形成为使得速率 在脉冲电流的上升部分的变化量为±8％以下，或者半导体激光器在振荡阈值附近的多模式下被激发，半导体激光器以单一模式以分流的方式振荡 从阈值，通过调整当前阻挡层的条纹槽（7a）的宽度w，包层（5）的组成中的至少一个，当前阻挡层（7）和 有源层（4），当前阻挡层（7）的组成和在当前阻挡层（7）中形成光吸收层。 结果，在激光束打印机的光源装置以数百微秒的短驱动脉冲驱动的情况下，光源装置变为使得在不能产生瞬时现象的情况下 可以获得脉冲的上升和稳定的光输出。

公开(公告)号：US06674098B1

公开(公告)日：2004-01-06

申请号：US10031931

申请日：2002-01-25

申请人： Shigeru Niki ,  Paul Fons ,  Kakuya Iwata ,  Tetsuhiro Tanabe ,  Hidemi Takasu ,  Ken Nakahara

发明人： Shigeru Niki ,  Paul Fons ,  Kakuya Iwata ,  Tetsuhiro Tanabe ,  Hidemi Takasu ,  Ken Nakahara

IPC分类号： H01L2715

CPC分类号： H01L33/28 ,  H01L33/0087 ,  H01S5/021 ,  H01S5/32308 ,  H01S5/32341 ,  H01S5/327

摘要： A light emitting device includes a silicon substrate (1), a silicon nitride film (2) formed on the surface of the silicon substrate (1), at least an n-type layer (3), (4) and a p-type layer (6), (7) which are formed on the silicon nitride film (2) and also which are made of a ZnO based compound semiconductor, and a semiconductor layer lamination (11) in which layers are laminated to form a light emitting layer. Preferably this silicon nitride film (2) is formed by thermal treatment conducted in an atmosphere containing nitrogen such as an ammonium gas. Also, in another embodiment, a light emitting device is formed by growing a ZnO based compound semiconductor layer on a main face of a sapphire substrate, the main face being perpendicular to the C-face thereof. As a result, it is possible to obtain a device using a ZnO based compound with high properties such as an LED very excellent in crystallinity and having a high light emitting efficiency.

摘要翻译： 发光器件包括：硅衬底（1），形成在硅衬底（1）的表面上的氮化硅膜（2），至少n型层（3），（4）和p型 形成在氮化硅膜（2）上并且由ZnO基化合物半导体制成的层（6），（7）和层叠层以形成发光层的半导体层层叠体 。 优选地，该氮化硅膜（2）通过在含氮气体的气氛中进行热处理而形成。 此外，在另一实施例中，通过在蓝宝石衬底的主面上生长ZnO基化合物半导体层，主面垂直于其C面而形成发光器件。 结果，可以获得使用具有高性能的ZnO基化合物的器件，例如非常优异的结晶度并且具有高发光效率的LED。