公开(公告)号：US07180088B2

公开(公告)日：2007-02-20

申请号：US10731336

申请日：2003-12-09

申请人： Hideto Sugawara

发明人： Hideto Sugawara

IPC分类号： H01L29/06

CPC分类号： H01L33/38 ,  H01L33/22 ,  H01L33/32 ,  H01L33/387 ,  H01L2933/0016

摘要： Nitride based semiconductor light-emitting devices are provided with a sufficiently low contact resistance p-type electrode. The nitride based semiconductor light-emitting devices include a p-type GaN contact layer, protrusions with fine recesses (uneven portions) formed on a surface of the p-type GaN contact layer, and a p-type electrode formed on the uneven portions.

摘要翻译： 基于氮化物的半导体发光器件具有足够低的接触电阻p型电极。 氮化物类半导体发光器件包括p型GaN接触层，形成在p型GaN接触层的表面上的具有细小凹部（不平坦部分）的突起和形成在不平坦部分上的p型电极。

公开(公告)号：US20060223288A1

公开(公告)日：2006-10-05

申请号：US11439579

申请日：2006-05-24

申请人： Hideto Sugawara ,  Tsunenori Hiratsuka

发明人： Hideto Sugawara ,  Tsunenori Hiratsuka

IPC分类号： H01L21/20 ,  H01L21/36 ,  H01L31/20

CPC分类号： H01L29/205 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/02502 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/0254 ,  H01L21/0262 ,  H01L29/155 ,  H01L29/2003 ,  H01L33/007

摘要： A group-III nitride semiconductor stack comprises a single-crystal substrate, a first group-III nitride layer formed on a principal surface of the single-crystal substrate, a graded low-temperature deposited layer formed on the group-III nitride layer and made of nitride in which group-III element composition is continuously changed, and a second group-III nitride layer formed on the graded low-temperature deposited layer.

公开(公告)号：US20050255615A1

公开(公告)日：2005-11-17

申请号：US11187072

申请日：2005-07-22

申请人： Hideto Sugawara ,  Yukio Watanabe ,  Hirohisa Abe ,  Kuniaki Konno

发明人： Hideto Sugawara ,  Yukio Watanabe ,  Hirohisa Abe ,  Kuniaki Konno

IPC分类号： H01L21/302 ,  H01L21/205 ,  H01L21/306 ,  H01L33/10 ,  H01L33/16 ,  H01L33/22 ,  H01L33/30 ,  H01L29/06

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/22 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/10155 ,  H01L2924/00014 ,  H01L2924/00

摘要： A high-luminance light emitting element is manufactured by a method comprising: forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first area, the light emitting layer emitting light of a wavelength λ permitted to pass through the GaP substrate; forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and forming a plurality of depressions and protrusions as high as 0.1λ to 3λ on the side surfaces.

摘要翻译： 通过以下方法制造高亮度发光元件，该方法包括：在包括第一表面的GaP基板的第一表面和与第一表面相对的第二表面上形成发光层，并且具有小于第一区域的面积， 所述发光层发射允许通过所述GaP衬底的波长λ的光; 在所述GaP基板上形成多个侧表面，以相对于所述第二表面变窄的方式分别倾斜大致相同的角度; 并且在侧表面上形成高达0.1λ至3λ的多个凹陷和突起。

公开(公告)号：US06956241B2

公开(公告)日：2005-10-18

申请号：US10407867

申请日：2003-04-04

申请人： Hideto Sugawara ,  Yukio Watanabe ,  Hirohisa Abe ,  Kuniaki Konno

发明人： Hideto Sugawara ,  Yukio Watanabe ,  Hirohisa Abe ,  Kuniaki Konno

IPC分类号： H01L21/302 ,  H01L21/205 ,  H01L21/306 ,  H01L33/10 ,  H01L33/16 ,  H01L33/22 ,  H01L33/30 ,  H01L27/15 ,  H01L31/12 ,  H01L33/00

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/16 ,  H01L33/22 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/73265 ,  H01L2924/10155 ,  H01L2924/00014 ,  H01L2924/00

摘要： A high-luminance light emitting element is manufactured by a method comprising: forming a light emitting layer on a first surface of a GaP substrate including the first surface and a second surface opposed to the first surface and having an area smaller than the first area, the light emitting layer emitting light of a wavelength λ permitted to pass through the GaP substrate; forming a plurality of side surfaces on the GaP substrate to be respectively aslant by substantially the same angle to become narrower toward the second surface; and forming a plurality of depressions and protrusions as high as 0.1 λ to 3 λ on the side surfaces.

摘要翻译： 通过以下方法制造高亮度发光元件，该方法包括：在包括第一表面的GaP基板的第一表面和与第一表面相对的第二表面上形成发光层，并且具有小于第一区域的面积， 所述发光层发射允许通过所述GaP衬底的波长λ的光; 在所述GaP基板上形成多个侧表面，以相对于所述第二表面变窄的方式分别倾斜大致相同的角度; 并且在侧表面上形成高达0.1λ至3λ的多个凹陷和突起。

公开(公告)号：US20050218419A1

公开(公告)日：2005-10-06

申请号：US11121453

申请日：2005-05-04

申请人： Haruhiko Okazaki ,  Hideto Sugawara

发明人： Haruhiko Okazaki ,  Hideto Sugawara

IPC分类号： H01L21/28 ,  H01L33/06 ,  H01L33/10 ,  H01L33/32 ,  H01L33/40 ,  H01L33/00

CPC分类号： H01L33/40 ,  H01L24/73 ,  H01L33/32 ,  H01L33/405 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/12041 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099

摘要： An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle over (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle over (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle over (3)} an Al layer as a high-reflection electrode, {circle over (4)} a Ti layer having a barrier function, and {circle over (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.

公开(公告)号：US20050040423A1

公开(公告)日：2005-02-24

申请号：US10947631

申请日：2004-09-22

申请人： Haruhiko Okazaki ,  Hideto Sugawara

发明人： Haruhiko Okazaki ,  Hideto Sugawara

IPC分类号： H01L21/28 ,  H01L33/06 ,  H01L33/10 ,  H01L33/32 ,  H01L33/40 ,  H01L27/15

CPC分类号： H01L33/40 ,  H01L24/73 ,  H01L33/32 ,  H01L33/405 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/12041 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099

摘要： An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circumflex over (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circumflex over (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circumflex over (3)} an Al layer as a high-reflection electrode, {circumflex over (4)} a Ti layer having a barrier function, and {circumflex over (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.

摘要翻译： 在蓝宝石衬底上形成InGaN有源层。 在InGaN有源层上形成p侧电极，以向该InGaN有源层提供电流。 p侧电极包括1个用于与p-GaN层形成欧姆接触的Ni层，2是具有阻止杂质扩散的阻挡功能的Mo层，3作为高反射电极的Al层，4是Ti 具有阻挡功能的层，以及用于改善与引线框架上的基座的接触的Au层。 具有该五层结构的p侧电极同时实现欧姆接触和高反射率。

公开(公告)号：US20050035363A1

公开(公告)日：2005-02-17

申请号：US10946668

申请日：2004-09-22

申请人： Haruhiko Okazaki ,  Hideto Sugawara

发明人： Haruhiko Okazaki ,  Hideto Sugawara

IPC分类号： H01L21/28 ,  H01L33/06 ,  H01L33/10 ,  H01L33/32 ,  H01L33/40 ,  H01L33/00

CPC分类号： H01L33/40 ,  H01L24/73 ,  H01L33/32 ,  H01L33/405 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/12041 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099

摘要： An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle over (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle over (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle over (3)} an Al layer as a high-reflection electrode, {circle over (4)} a Ti layer having a barrier function, and {circle over (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.

公开(公告)号：US06825502B2

公开(公告)日：2004-11-30

申请号：US10417873

申请日：2003-04-17

申请人： Haruhiko Okazaki ,  Hideto Sugawara

发明人： Haruhiko Okazaki ,  Hideto Sugawara

IPC分类号： H01L3300

CPC分类号： H01L33/40 ,  H01L24/73 ,  H01L33/32 ,  H01L33/405 ,  H01L2224/05001 ,  H01L2224/05023 ,  H01L2224/0508 ,  H01L2224/05568 ,  H01L2224/05573 ,  H01L2224/16145 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/49107 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01019 ,  H01L2924/12041 ,  H01L2924/3025 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/45099

摘要： An InGaN active layer is formed on a sapphire substrate. A p-side electrode is formed on the InGaN active layer to supply an electric current to this InGaN active layer. The p-side electrode includes {circle around (1)} an Ni layer for forming an ohmic contact with a p-GaN layer, {circle around (2)} an Mo layer having a barrier function of preventing diffusion of impurities, {circle around (3)} an Al layer as a high-reflection electrode, {circle around (4)} a Ti layer having a barrier function, and {circle around (5)} an Au layer for improving the contact with a submount on a lead frame. The p-side electrode having this five-layered structure realizes an ohmic contact and high reflectance at the same time.

摘要翻译： 在蓝宝石衬底上形成InGaN有源层。 在InGaN有源层上形成p侧电极，以向该InGaN有源层提供电流。 p侧电极包括{圆周（1是用于与p-GaN层形成欧姆接触的Ni层，{圆周（2个具有阻止杂质扩散的阻挡功能的Mo层，{周围（3个 Al层作为高反射电极{圆周（4个具有阻挡功能的Ti层）和{圆周（5个Au层，用于改善与引线框架上的基座的接触的Au层，具有该反射电极的p侧电极 五层结构同时实现欧姆接触和高反射率。

公开(公告)号：US5459746A

公开(公告)日：1995-10-17

申请号：US128139

申请日：1993-09-29

申请人： Kazuhiko Itaya ,  Hideto Sugawara

发明人： Kazuhiko Itaya ,  Hideto Sugawara

IPC分类号： H01L21/205 ,  H01L33/10 ,  H01L33/30 ,  H01L33/44 ,  H01S5/00 ,  H01S5/042 ,  H01S5/183 ,  H01S5/323 ,  H01S3/18

CPC分类号： H01S5/18308 ,  H01S5/0421 ,  H01S5/3211 ,  H01S5/32325

摘要： A surface emission type semiconductor light-emitting device includes a substrate, a distributed Bragg reflector formed on the substrate, a light-emitting region formed on the distributed Bragg reflector, a first contact layer, formed on a portion of the light-emitting region and transparent to a wavelength of light emitted from the light-emitting region, for supplying a current to the light-emitting region, and a second contact layer, formed on the light-emitting region to cover a side portion of the first contact layer, for forming a current blocking barrier between the light-emitting region and the second contact layer and supplying the current to the first contact layer.

摘要翻译： 表面发射型半导体发光器件包括衬底，形成在衬底上的分布布拉格反射器，形成在分布式布拉格反射器上的发光区域，形成在发光区域的一部分上的第一接触层和 对于从发光区域发射的光的波长透明，用于向发光区域提供电流;以及第二接触层，形成在发光区域上以覆盖第一接触层的侧部，用于 在所述发光区域和所述第二接触层之间形成电流阻挡屏障，并将电流供应到所述第一接触层。