Magnetic recording device
    81.
    发明授权
    Magnetic recording device 有权
    磁记录装置

    公开(公告)号:US07417814B2

    公开(公告)日:2008-08-26

    申请号:US11197493

    申请日:2005-08-05

    申请人: Yuichiro Yamazaki

    发明人: Yuichiro Yamazaki

    IPC分类号: G11B27/36 G11B5/09 G11C29/00

    摘要: A magnetic recording device comprising a magnetic recording medium, a read-write channel for modulating write data, writing it on the magnetic recording medium, reading data from the magnetic recording medium, and demodulating the read data, and a processor for supplying the write data to the read-write channel and being supplied with the read data from the read-write channel. The processor supplies to the read-write channel a microdefect detection pattern having a first pattern for generating a consecutive magnetization inversion during writing and a second pattern for generating, during reading, a signal having a S/N ratio higher than the signal produced by the first pattern, the read-write channel modulates the microdefect detection pattern, writes it to the magnetic recording medium, reads the microdefect detection pattern, which was written, from the magnetic recording medium, and conducts abnormality detection of the microdefect detection pattern, which was read out.

    摘要翻译: 一种磁记录装置,包括磁记录介质,用于调制写数据的读写通道,将其写在磁记录介质上,从磁记录介质读取数据,以及解调读数据;以及处理器,用于提供写数据 到读写通道并从读写通道提供读数据。 处理器向读写通道提供具有用于在写入期间产生连续磁化反转的第一模式的微缺陷检测模式,以及用于在读取期间产生S / N比高于由该信号产生的信号的信号的第二模式 第一模式,读写通道调制微缺陷检测图案,将其写入磁记录介质,读取从磁记录介质写入的微缺陷检测图案,并进行微缺陷检测图案的异常检测,该检测图案是 读出。

    Substrate inspection apparatus, substrate inspection method and semiconductor device manufacturing method
    84.
    发明申请
    Substrate inspection apparatus, substrate inspection method and semiconductor device manufacturing method 失效
    基板检查装置,基板检查方法及半导体装置的制造方法

    公开(公告)号:US20070194232A1

    公开(公告)日:2007-08-23

    申请号:US11698132

    申请日:2007-01-26

    IPC分类号: G21K7/00

    摘要: A substrate inspection apparatus includes: an electron gun which generates an electron beam to irradiate the electron beam to a substrate; an electron detection unit which detects at least one of a secondary electron, a reflection electron and a back scattering electron generated from a surface of the substrate by the irradiation of the electron beam to output signals constituting an image showing a state of the substrate surface; and a surface potential uniformizing unit which generates ions, and irradiates the ions to the substrate before the irradiation of the electron beam to uniformize a surface potential of the substrate.

    摘要翻译: 基板检查装置包括:电子枪,其产生电子束以将电子束照射到基板; 电子检测单元,其通过电子束的照射检测从基板的表面产生的二次电子,反射电子和背散射电子中的至少一个,以输出构成表示基板表面的状态的图像的信号; 以及产生离子的表面电位均匀化单元,并且在照射电子束之前将离子照射到基板上以使基板的表面电位均匀化。

    Structure inspection method, pattern formation method, process condition determination method and resist pattern evaluation apparatus
    86.
    发明申请
    Structure inspection method, pattern formation method, process condition determination method and resist pattern evaluation apparatus 失效
    结构检查方法,图案形成方法,工艺条件测定方法和抗蚀剂图案评估装置

    公开(公告)号:US20050168758A1

    公开(公告)日:2005-08-04

    申请号:US11051617

    申请日:2005-01-27

    CPC分类号: G03F7/70625 G01N21/956

    摘要: Wavelength dispersion of intensity of light reflected from an evaluation object is measured. A complex refractive index of a substance forming the evaluation object and the environment are prepared. Virtual component ratios comprising a mixture ratio of the substances forming the evaluation object and the environment are prepared. Reflectance wavelength dispersions to the virtual component ratios are calculated. Similar reflectance wavelength dispersions having a small difference with the measured wavelength dispersion are extracted from the reflectance wavelength dispersions. Weighted average to the virtual component ratios used for calculating the similar reflectance wavelength dispersions are calculated to obtain a component ratio of the substance forming the evaluation object and the environment so that weighting is larger when the difference is smaller. A structure of the evaluation object is determined from the calculated component ratio.

    摘要翻译: 测量从评价对象反射的光的强度的波长色散。 制备形成评价对象的物质和环境的复合折射率。 制备包含形成评价对象的物质与环境的混合比的虚拟成分比例。 计算出虚拟分量比的反射波长色散。 从反射波长分散体中提取与测量的波长色散具有小差异的类似反射率波长色散。 计算用于计算相似反射率波长色散的虚拟分量比的加权平均值,以获得形成评估对象的物质与环境的分量比,使得当差值较小时加权较大。 评估对象的结构根据计算的分量比确定。

    Electron beam apparatus and device manufacturing method using same
    87.
    发明授权
    Electron beam apparatus and device manufacturing method using same 有权
    电子束装置及其制造方法

    公开(公告)号:US06909092B2

    公开(公告)日:2005-06-21

    申请号:US10437889

    申请日:2003-05-15

    摘要: A defect inspecting apparatus is provided for generating a less distorted test image to reliably observe a surface of a sample for detecting defects thereon. The defect detecting apparatus comprises a primary electron beam source for irradiating a sample, electrostatic lenses for focusing secondary electrons emitted from the surface of the sample irradiated with the primary electron beam, a detector for detecting the secondary electrons, and an image processing unit for processing a signal from the detector. Further, a second electron source may be provided for emitting an electron beam irradiated to the sample, wherein the sample may be irradiated with the electron beam from the second electron source before it is irradiated with the primary electron beam from the first electron source for observing the sample. A device manufacturing method is also provided for inspecting devices under processing with high throughput using the defect detecting apparatus.

    摘要翻译: 提供了一种缺陷检查装置,用于产生较小失真的测试图像,以可靠地观察用于检测缺陷的样品表面。 缺陷检测装置包括用于照射样品的一次电子束源,用于聚焦从一次电子束照射的样品的表面发射的二次电子的静电透镜,用于检测二次电子的检测器,以及用于处理的图像处理单元 来自检测器的信号。 此外,可以提供第二电子源用于发射照射到样品的电子束,其中在用来自第一电子源的一次电子束照射之前,可以用来自第二电子源的电子束照射样品,用于观察 例子。 还提供了一种装置制造方法,用于使用缺陷检测装置以高吞吐量检查处理装置。

    Pulse beam forming method and apparatus
    89.
    发明授权
    Pulse beam forming method and apparatus 失效
    脉冲波束形成方法和装置

    公开(公告)号:US5406178A

    公开(公告)日:1995-04-11

    申请号:US61003

    申请日:1993-05-14

    申请人: Yuichiro Yamazaki

    发明人: Yuichiro Yamazaki

    CPC分类号: H01J37/045

    摘要: In a pulse beam forming apparatus, there are disposed in order a beam generating device for generating a charged particle beam having a circular cross section, a beam elongating device for elongating the charged particle beam in cross section, a deflecting device for deflecting the charged particle beam in a direction perpendicular to the longitudinal direction of the cross section, an aperture for cutting the charged particle beam, and a beam reshaping device for reshaping the charged particle beam into one having a circular cross section.

    摘要翻译: 在脉冲波束形成装置中,依次设置用于产生具有圆形横截面的带电粒子束的束产生装置,用于使带电粒子束横截面伸长的束延长装置,用于使带电粒子偏转的偏转装置 在垂直于横截面的纵向的方向上的光束,用于切割带电粒子束的孔,以及用于将带电粒子束重塑成具有圆形横截面的束的重整装置。

    Pattern inspection apparatus and pattern inspection method
    90.
    发明授权
    Pattern inspection apparatus and pattern inspection method 有权
    图案检验装置和图案检验方法

    公开(公告)号:US08649591B2

    公开(公告)日:2014-02-11

    申请号:US13308719

    申请日:2011-12-01

    IPC分类号: G06K9/36

    CPC分类号: G01N21/95607 G01N21/9501

    摘要: In accordance with an embodiment, a pattern inspection method includes: applying a light generated from a light source to the same region of a substrate in which an inspection target pattern is formed; guiding, imaging and then detecting a reflected light from the substrate, and acquiring a detection signal for each of a plurality of different wavelengths; and adding the detection signals of the different wavelengths in association with an incident position of an imaging surface to generate added image data including information on a wavelength and signal intensity, judging, by the added image data, whether the inspection target pattern has any defect, and when judging that the inspection target pattern has a defect, detecting the position of the defect in a direction perpendicular to the substrate.

    摘要翻译: 根据实施例,图案检查方法包括:将从光源产生的光施加到形成有检查对象图案的基板的相同区域; 引导,成像,然后检测来自基板的反射光,并获取多个不同波长中的每一个的检测信号; 并且与成像面的入射位置相关联地添加不同波长的检测信号,以生成包括关于波长和信号强度的信息的附加图像数据,通过添加的图像数据判断检查对象图案是否具有任何缺陷, 并且当判断为检查对象图案有缺陷时,检测出与基板垂直的方向上的缺陷的位置。