公开(公告)号：US08214565B2

公开(公告)日：2012-07-03

申请号：US12010559

申请日：2008-01-25

申请人： Satoshi Sakurai ,  Katsuji Ideura ,  Kazuhiro Yasuno ,  Fujio Seki

发明人： Satoshi Sakurai ,  Katsuji Ideura ,  Kazuhiro Yasuno ,  Fujio Seki

IPC分类号： G06F13/12 ,  H04B3/36

CPC分类号： G06F3/023

摘要： A KVM switch includes: server units respectively connected to computers; user units respectively connected to input/output devices for transmitting signals to the computers and receiving signals from the computers; and a main unit that connects the server units and the user units. Each of the server units, user units and main unit is a communication unit and includes: a first part communicating with another communication unit to inform the above another communication unit of unit type information about the communication unit and receive unit type information about the above another communication unit therefrom; and a second part controlling communications with the above another communication unit on the basis of the unit type information acquired from the above another communication unit.

摘要翻译： KVM切换器包括：分别连接到计算机的服务器单元; 用户单元分别连接到输入/输出设备，用于向计算机发送信号并从计算机接收信号; 以及连接服务器单元和用户单元的主单元。 每个服务器单元，用户单元和主单元是通信单元，并且包括：与另一个通信单元通信的第一部分，以通知上述另一个通信单元关于通信单元的单元类型信息，以及接收关于上述另一个的单元类型信息 通信单元; 以及第二部分，其基于从上述另一通信单元获取的单元类型信息来控制与上述另一通信单元的通信。

公开(公告)号：US20110248782A1

公开(公告)日：2011-10-13

申请号：US13166312

申请日：2011-06-22

申请人： Masao Kondo ,  Yoshikuni Matsunaga ,  Kenta Seki ,  Satoshi Sakurai

发明人： Masao Kondo ,  Yoshikuni Matsunaga ,  Kenta Seki ,  Satoshi Sakurai

IPC分类号： H03F3/26

CPC分类号： H03F3/193 ,  H01L2224/0603 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49111 ,  H03F1/0272 ,  H03F1/565 ,  H03F3/195 ,  H03F3/21 ,  H03F3/245 ,  H03F3/26 ,  H03F3/265 ,  H03F3/45179 ,  H03F3/45475 ,  H03F3/68 ,  H03F2200/105 ,  H03F2200/222 ,  H03F2200/387 ,  H03F2200/411 ,  H03F2200/451 ,  H03F2200/465 ,  H03F2200/534 ,  H03F2200/541 ,  H03F2203/45481 ,  H03F2203/45544 ,  H03F2203/45621 ,  H03F2203/45631 ,  H03F2203/45731 ,  H01L2924/00014

摘要： A reduction is achieved in the primary-side input impedance of a transformer (voltage transformer) as an output matching circuit without involving a reduction in Q-factor. An RF power amplifier includes transistors, and a transformer as the output matching circuit. The transformer has a primary coil and a secondary coil which are magnetically coupled to each other. To the input terminals of the transistors, respective input signals are supplied. The primary coil is coupled to each of the output terminals of the transistors. From the secondary coil, an output signal is generated. The primary coil includes a first coil and a second coil which are coupled in parallel between the respective output terminals of the transistors, and each magnetically coupled to the secondary coil. By the parallel coupling of the first and second coils of the primary coil, the input impedance of the primary coil is reduced.

摘要翻译： 在作为输出匹配电路的变压器（电压互感器）的初级侧输入阻抗中实现减小，而不涉及Q因子的降低。 RF功率放大器包括晶体管和变压器作为输出匹配电路。 变压器具有彼此磁耦合的初级线圈和次级线圈。 对于晶体管的输入端，提供相应的输入信号。 初级线圈耦合到晶体管的每个输出端子。 从次级线圈产生输出信号。 初级线圈包括第一线圈和第二线圈，它们并联耦合在晶体管的相应输出端之间，并且每一个磁耦合到次级线圈。 通过初级线圈的第一和第二线圈的并联耦合，初级线圈的输入阻抗减小。

公开(公告)号：US07995984B2

公开(公告)日：2011-08-09

申请号：US12244908

申请日：2008-10-03

申请人： Tomoaki Kudaishi ,  Satoshi Sakurai ,  Takayuki Tsutsui ,  Masashi Yamaura ,  Reiichi Arai ,  Takayuki Maehara

发明人： Tomoaki Kudaishi ,  Satoshi Sakurai ,  Takayuki Tsutsui ,  Masashi Yamaura ,  Reiichi Arai ,  Takayuki Maehara

IPC分类号： H04B1/28

CPC分类号： H01L24/49 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0655 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/48599 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/15192 ,  H01L2924/181 ,  H01L2924/19042 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/85399 ,  H01L2224/05599

摘要： The present invention aims to reduce an exclusively-possessed area of each of bonding wires mounted over a wiring board, for coupling a power amplifying unit of a semiconductor chip and an antenna switch of a second semiconductor chip in a semiconductor device that configures an RF module. In the RF module, the first semiconductor chip and the second semiconductor chip are mounted side by side in a central area of the wiring board. The first semiconductor chip is formed with amplifier circuits and a control circuit and comprises a silicon substrate or a compound semiconductor substrate. On the other hand, the second semiconductor chip is formed with an antenna switch and comprises the silicon substrate or compound semiconductor substrate. Pads of the first semiconductor chip and pads of the second semiconductor chip are respectively electrically coupled to one another. This coupling is carried out by the bonding wires formed in the surface of the wiring board and the bonding wires formed inside the wiring board.

摘要翻译： 本发明的目的在于减少安装在布线板上的各引线的独占区域，用于将半导体芯片的功率放大单元和第二半导体芯片的天线开关耦合到半导体器件中，该半导体器件配置RF模块 。 在RF模块中，第一半导体芯片和第二半导体芯片并排安装在布线板的中心区域中。 第一半导体芯片由放大器电路和控制电路形成，并且包括硅衬底或化合物半导体衬底。 另一方面，第二半导体芯片由天线开关形成，并且包括硅衬底或化合物半导体衬底。 第一半导体芯片的焊盘和第二半导体芯片的焊盘彼此分别电耦合。 通过形成在布线板的表面的接合线和形成在布线基板内的接合线进行该耦合。

公开(公告)号：US07744822B2

公开(公告)日：2010-06-29

申请号：US11770420

申请日：2007-06-28

申请人： Satoshi Sakurai

发明人： Satoshi Sakurai

IPC分类号： G01N30/00

CPC分类号： B01J19/0093 ,  B01J2219/00783 ,  B01J2219/00831 ,  B01J2219/00858 ,  B01J2219/00862 ,  B01J2219/00889 ,  B01J2219/00891 ,  B01J2219/00952 ,  B01L3/502707 ,  B01L2200/025 ,  B01L2300/0816 ,  B01L2300/0861 ,  B01L2300/0887 ,  B01L2400/0487 ,  G01R33/302 ,  G01R33/307 ,  H01J49/0018 ,  H01J49/165

摘要： There is disclosed a microchip reactor capable of being used in research on reaction kinetics. With this microchip reactor, the time (reaction time) elapsed until a measurement is made since mixing of two liquids is variable. The microchip reactor comprises a base portion and a movable portion which have sliding contact surfaces that are in contact with each other. The base portion and movable portion have their respective downstream flow channel portions which meet at an intersection. Different reagents are introduced at the intersection, mixed, and reacted. An opening is formed in the movable portion. A slot is formed in the base portion. The major axis of the slot is in the direction of sliding motion of the movable portion. The position of the intersection where the reagents are mixed is determined by the intersection of the opening and the slot.

摘要翻译： 公开了一种可用于研究反应动力学的微芯片反应器。 利用该微芯片反应器，从两种液体的混合开始到测量之前经过的时间（反应时间）是可变的。 微芯片反应器包括具有彼此接触的滑动接触表面的基部和可动部。 底座部分和可移动部分具有在相交处相交的各自的下游流动通道部分。 在交叉点引入不同的试剂，混合并反应。 在可动部形成开口部。 在基部形成槽。 槽的长轴在可动部的滑动方向上。 试剂混合的交点的位置由开口和槽的交点确定。

公开(公告)号：US07554403B1

公开(公告)日：2009-06-30

申请号：US12038225

申请日：2008-02-27

申请人： Satoshi Sakurai

发明人： Satoshi Sakurai

IPC分类号： H03F3/45

CPC分类号： H03F3/45188 ,  H03F1/223 ,  H03F1/301 ,  H03F2200/78 ,  H03F2203/45244 ,  H03F2203/45288 ,  H03F2203/45646

摘要： Bias current generation circuits and systems are disclosed. In one embodiment, a gain boosting cascode system comprises a cascode based on a transconductance amplifier and a current buffer and a gain booster circuit coupled to the cascode optimally boosting a gain of the cascode by maintaining the transconductance amplifier and the current buffer in their respective saturation regions. The gain booster circuit is based on one or more feedback amplifiers coupled in series with a main voltage control transistor. The main voltage control transistor is maintained in a triode region, and the voltage at the drain of the main voltage control transistor can be set by passing an appropriate amount of current through the main voltage control transistor. This in turn would keep the transconductance amplifier and the current buffer in their respective saturation regions, thus generating the optimal gain for the gain boosted cascode system.

摘要翻译： 公开了偏压电流发生电路和系统。 在一个实施例中，增益级联共源共栅系统包括基于跨导放大器的共源共栅和通过将跨导放大器和当前缓冲器保持在它们各自的饱和状态中而耦合到共源共同体的增益升压电路来最佳地升高共源共栅的增益 地区。 增益升压电路基于与主电压控制晶体管串联耦合的一个或多个反馈放大器。 主电压控制晶体管保持在三极管区域，并且可以通过使适当量的电流通过主电压控制晶体管来设置主电压控制晶体管的漏极处的电压。 这又将跨导放大器和当前缓冲器保持在它们各自的饱和区域中，从而为增益升压共源共栅系统产生最佳增益。

公开(公告)号：US20090130996A1

公开(公告)日：2009-05-21

申请号：US12244908

申请日：2008-10-03

申请人： Tomoaki Kudaishi ,  Satoshi Sakurai ,  Takayuki Tsutsui ,  Masashi Yamaura ,  Reiichi Arai ,  Takayuki Maehara

发明人： Tomoaki Kudaishi ,  Satoshi Sakurai ,  Takayuki Tsutsui ,  Masashi Yamaura ,  Reiichi Arai ,  Takayuki Maehara

IPC分类号： H04B1/38 ,  H01L23/49

CPC分类号： H01L24/49 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L25/0655 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/32225 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48227 ,  H01L2224/484 ,  H01L2224/48599 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73265 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01021 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01031 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/12032 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/13064 ,  H01L2924/13091 ,  H01L2924/15192 ,  H01L2924/181 ,  H01L2924/19042 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/30107 ,  H01L2924/3011 ,  H01L2924/30111 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/85399 ,  H01L2224/05599

摘要： The present invention aims to reduce an exclusively-possessed area of each of bonding wires mounted over a wiring board, for coupling a power amplifying unit of a semiconductor chip and an antenna switch of a second semiconductor chip in a semiconductor device that configures an RF module. In the RF module, the first semiconductor chip and the second semiconductor chip are mounted side by side in a central area of the wiring board. The first semiconductor chip is formed with amplifier circuits and a control circuit and comprises a silicon substrate or a compound semiconductor substrate. On the other hand, the second semiconductor chip is formed with an antenna switch and comprises the silicon substrate or compound semiconductor substrate. Pads of the first semiconductor chip and pads of the second semiconductor chip are respectively electrically coupled to one another. This coupling is carried out by the bonding wires formed in the surface of the wiring board and the bonding wires formed inside the wiring board.

摘要翻译： 本发明的目的在于减少安装在布线板上的各引线的独占区域，用于将半导体芯片的功率放大单元和第二半导体芯片的天线开关耦合到半导体器件中，该半导体器件配置RF模块 。 在RF模块中，第一半导体芯片和第二半导体芯片并排安装在布线板的中心区域中。 第一半导体芯片由放大器电路和控制电路形成，并且包括硅衬底或化合物半导体衬底。 另一方面，第二半导体芯片由天线开关形成，并且包括硅衬底或化合物半导体衬底。 第一半导体芯片的焊盘和第二半导体芯片的焊盘彼此分别电耦合。 通过形成在布线板的表面的接合线和形成在布线基板内的接合线进行该耦合。

公开(公告)号：US06495752B1

公开(公告)日：2002-12-17

申请号：US09273465

申请日：1999-03-22

申请人： Toshio Sugizaki ,  Yasukazu Nakata ,  Satoshi Sakurai

发明人： Toshio Sugizaki ,  Yasukazu Nakata ,  Satoshi Sakurai

IPC分类号： H05K900

CPC分类号： H05K9/0005 ,  B32B27/06 ,  H05K9/0094

摘要： An electric wave shielding material provided to be adhered to a window. The material includes a body member composed of a light transmitting surface material; a light transmitting electrically conductive layer provided on the light transmitting surface material; and a light transmitting adhesive provided on at least a part of the light transmitting electrically conductive layer in such a manner that a part of the light transmitting electrically conductive layer is exposed to form a connecting electrically conductive portion. A connecting piece composed of a member for converting an electric wave into a heat energy is connected to the connecting electrically conductive portion, and includes an adhesive layer.

摘要翻译： 设置在窗户上的电波屏蔽材料。 该材料包括由透光表面材料构成的主体部件; 设置在透光表面材料上的透光导电层; 以及设置在所述透光导电层的至少一部分上的透光性粘合剂，使得所述透光导电层的一部分露出以形成连接导电部分。 由连接导电部分连接由用于将电波转换为热能的部件构成的连接件，并且包括粘接层。

公开(公告)号：US6066944A

公开(公告)日：2000-05-23

申请号：US252537

申请日：1999-02-18

申请人： Satoshi Sakurai

发明人： Satoshi Sakurai

IPC分类号： H03F3/45 ,  G05F3/26 ,  H03F3/343 ,  H03F3/50 ,  G05F3/16 ,  G05F1/10 ,  H03F3/04 ,  H03K3/01

CPC分类号： H03F3/505 ,  G05F3/262

摘要： A current mirror circuit suitable for use as an amplifier active load having first and second MOS transistors connected in series together with third and fourth MOS transistors connected in series. The first and third transistors have common source and common gate connections, with the drain of the second transistor forming the current mirror input and the drain of the fourth transistor forming the current mirror output. Bias circuitry operates to maintain the second transistor in the triode region of operation and to maintain the fourth transistor in the saturation region of operation. The second transistor has a small geometry compared to the fourth transistor so as to enhance the transient response performance of the current mirror circuit.

摘要翻译： 适用于具有与串联连接的第三和第四MOS晶体管串联连接的第一和第二MOS晶体管的放大器有源负载的电流镜电路。 第一和第三晶体管具有共同的源极和公共栅极连接，第二晶体管的漏极形成电流镜输入，第四晶体管的漏极形成电流镜输出。 偏置电路用于将第二晶体管保持在三极管工作区域中，并将第四晶体管保持在饱和运行区域。 与第四晶体管相比，第二晶体管具有小的几何形状，以便增强电流镜电路的瞬态响应性能。

公开(公告)号：US6046579A

公开(公告)日：2000-04-04

申请号：US228899

申请日：1999-01-11

申请人： Satoshi Sakurai

发明人： Satoshi Sakurai

IPC分类号： G05F3/26 ,  G05F3/16

CPC分类号： G05F3/262 ,  Y10S323/907

摘要： A current processing circuit having reduced charge and discharge time constant errors caused by variations in operating temperature and voltage while conveying charge and discharge currents to and from a capacitor, respectively. Instead of switching both the charge and discharge currents on and off, only the charge current is switched. The discharge current, generated and sunk by a current mirror circuit, remains on at all times. The charge current is two times the nominal discharge current. The actual discharge current is the sum of the nominal, or desired, discharge current, plus a small error current component introduced by the current mirror circuit generating the discharge current (thereby making the charge current approximately two times the actual discharge current). Alternatively, the discharge current can be switched while the charge current, generated and sourced by a current mirror circuit, remains on at all times. The discharge current is two times the nominal charge current. The actual charge current is the sum of the nominal, or desired, charge current, plus a small error current component introduced by the current mirror circuit generating the charge current (thereby making the discharge current approximately two times the actual charge current). As a result, the charging and discharging time constants of the capacitor are significantly less dependent upon operating temperature and voltage.

摘要翻译： 一种当前的处理电路，其分别在将电荷和电流输送到电容器时将工作温度和电压的变化引起的充放电时间常数误差降低。 而不是打开和关闭充电和放电电流，仅切换充电电流。 通过电流镜电路产生和沉没的放电电流始终保持导通。 充电电流是额定放电电流的两倍。 实际放电电流是标称或期望的放电电流的总和加上由产生放电电流的电流镜电路引起的小的误差电流分量（从而使充电电流约为实际放电电流的两倍）。 或者，可以切换放电电流，同时由电流镜像电路产生和源极的充电电流始终保持接通。 放电电流是额定充电电流的两倍。 实际充电电流是标称或期望的充电电流的总和加上由产生充电电流的电流镜电路引入的小的误差电流分量（从而使放电电流大约是实际充电电流的两倍）。 结果，电容器的充电和放电时间常数明显低于操作温度和电压。

公开(公告)号：US08838044B2

公开(公告)日：2014-09-16

申请号：US13610237

申请日：2012-09-11

申请人： Satoshi Goto ,  Kazuaki Hori ,  Satoshi Sakurai

发明人： Satoshi Goto ,  Kazuaki Hori ,  Satoshi Sakurai

IPC分类号： H04B1/44 ,  H04B1/10

CPC分类号： H04B1/109 ,  Y02D70/00

摘要： An attenuating antenna switch may be used to suppress increase in the scale and power consumption of an RFIC. The antenna switch has a first terminal, a second terminal, and an antenna terminal coupled to the first and second terminals and configured to be connected to an antenna. The first switch switches between a first state in which a high frequency signal is propagated between the first terminal and the antenna terminal, and a second state in which the high frequency signal is interrupted. A second switch switches between the first and second states between the second terminal and the antenna terminal. The first and second switches are controlled in a mutually exclusive manner such that only one of the two switches can be in the first state at any given time. When in the first state, each switch adjusts an attenuation amount of the high frequency signal.

摘要翻译： 可以使用衰减天线开关来抑制RFIC的规模和功耗的增加。 天线开关具有耦合到第一和第二端子并被配置为连接到天线的第一端子，第二端子和天线端子。 第一开关在高频信号在第一端子和天线端子之间传播的第一状态和高频信号被中断的第二状态之间切换。 第二开关在第二端子和天线端子之间的第一和第二状态之间切换。 第一和第二开关以相互排斥的方式进行控制，使得两个开关中只有一个可以在任何给定时间处于第一状态。 当处于第一状态时，每个开关调节高频信号的衰减量。