LOW STRESS ASYMMETRIC DUAL SIDE MODULE

    公开(公告)号:US20220415767A1

    公开(公告)日:2022-12-29

    申请号:US17929898

    申请日:2022-09-06

    Abstract: Implementations of semiconductor packages may include a first substrate having two or more die coupled to a first side, a clip coupled to each of the two or more die on the first substrate and a second substrate having two or more die coupled to a first side of the second substrate. A clip may be coupled to each of the two or more die on the second substrate. The package may include a lead frame between the first substrate and the second substrate and a molding compound. A second side of each of the first substrate and the second substrate may be exposed through the molding compound. A perimeter of the first substrate and a perimeter of the second substrate may not fully overlap when coupled through the lead frame.

    SEMICONDUCTOR PACKAGES AND RELATED METHODS

    公开(公告)号:US20210320013A1

    公开(公告)日:2021-10-14

    申请号:US17304792

    申请日:2021-06-25

    Abstract: Methods of forming semiconductor packages include providing a first insulator layer coupled with a first metallic layer. A recess is formed in the first metallic layer and a semiconductor die is mechanically coupled therein. The die is mechanically coupled with a second metallic layer and the second metallic layer is coupled with a second insulator layer. The die and layers are at least partially encapsulated to form the semiconductor package. The first and/or second metallic layers may be insulator-metal substrates, metal-insulator-metal (MIM) substrates, or may be formed of lead frames. In implementations the package does not include a spacer between the die and the first metallic layer and does not include a spacer between the die and the second metallic layer. In implementations the first insulator layer and the second insulator layer are exposed through the encapsulant or are mechanically coupled with metallic layers exposed through the encapsulant.

    FANOUT WAFER LEVEL PACKAGE FOR OPTICAL DEVICES AND RELATED METHODS

    公开(公告)号:US20210167112A1

    公开(公告)日:2021-06-03

    申请号:US16701533

    申请日:2019-12-03

    Abstract: Implementations of semiconductor packages may include: a substrate having a first side and a second side. The package may include a semiconductor package and a controller device coupled to the first side of the substrate through a tape or an adhesive. A molding compound may encapsulate the semiconductor device and the controller device. The package may also include a redistribution layer electrically coupling the semiconductor device and the controller device. An interconnect structure may be coupled with the redistribution layer. The package may include a solder resist layer coupled around the interconnect structure and over the molding compound, the semiconductor device, the controller device, and the copper redistribution layer.

    SEMICONDUCTOR PACKAGES AND RELATED METHODS

    公开(公告)号:US20210134606A1

    公开(公告)日:2021-05-06

    申请号:US16674279

    申请日:2019-11-05

    Abstract: Methods of forming semiconductor packages include providing a first insulator layer coupled with a first metallic layer. A recess is formed in the first metallic layer and a semiconductor die is mechanically coupled therein. The die is mechanically coupled with a second metallic layer and the second metallic layer is coupled with a second insulator layer. The die and layers are at least partially encapsulated to form the semiconductor package. The first and/or second metallic layers may be insulator-metal substrates, metal-insulator-metal (MIM) substrates, or may be formed of lead frames. In implementations the package does not include a spacer between the die and the first metallic layer and does not include a spacer between the die and the second metallic layer. In implementations the first insulator layer and the second insulator layer are exposed through the encapsulant or are mechanically coupled with metallic layers exposed through the encapsulant.

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