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    Method of processing selected surfaces in a semiconductor process chamber based on a temperature differential between surfaces
    83.
    发明申请
    Method of processing selected surfaces in a semiconductor process chamber based on a temperature differential between surfaces 失效
    基于表面之间的温度差处理在半导体处理室中选择的表面的方法

    公开(公告)号：US20050150448A1

    公开(公告)日：2005-07-14

    申请号：US11050998

    申请日：2005-02-04

    Applicant: James Pan

    Inventor： James Pan

    IPC: C23C16/44 ,  C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14 ,  G01J5/00

    CPC classification number: C23C16/4405 ,  Y10S438/905

    Abstract: The present invention relates to a method of processing selected surfaces in a semiconductor process chamber by creating a temperature differential between the selected surfaces and contacting the surfaces with a reactant that preferentially react with a surface at one end of the temperature differential relative to the other selected surface(s). More particularly, the invention relates to the use of nitrogen trifluoride (NF3) gas for in situ cleaning of cold wall process chambers such as Rapid thermal Chemical Vaporization (“RTCVD”) systems.

    Abstract translation: 本发明涉及一种通过在所选择的表面之间产生温度差并使表面与相对于另一个所选择的表面的温度差的一端优先与表面反应的反应物接触来处理半导体处理室中的选定表面的方法 表面。 更具体地说，本发明涉及三氟化氮（NF 3 N 3）气体用于诸如快速热化学气化（“RTCVD”）系统的冷壁处理室的原位清洁的用途。

    Shielded gate trench FET with multiple channels
    87.
    发明授权
    Shielded gate trench FET with multiple channels 有权
    多通道屏蔽栅沟槽FET

    公开(公告)号：US09224853B2

    公开(公告)日：2015-12-29

    申请号：US13553285

    申请日：2012-07-19

    Applicant: James Pan

    Inventor： James Pan

    IPC: H01L29/66 ,  H01L29/78 ,  H01L29/06 ,  H01L29/10 ,  H01L29/40 ,  H01L29/423

    CPC classification number: H01L29/7813 ,  H01L29/0623 ,  H01L29/1095 ,  H01L29/407 ,  H01L29/42368 ,  H01L29/66734 ,  H01L29/7831

    Abstract: In one embodiment, an apparatus can include a trench extending into a semiconductor region of a first conductivity type, an electrode disposed in the trench, and a source region of the first conductivity type abutting a sidewall of the trench. The apparatus can include a first well region of a second conductivity type disposed in the semiconductor region below the source region and abutting the sidewall of the trench lateral to the electrode where the second conductivity type is opposite the first conductivity type. The apparatus can also include a second well region of the second conductivity type disposed in the semiconductor region and abutting the sidewall of the trench, and a third well region of the first conductivity type disposed between the first well region and the second well region.

    Abstract translation: 在一个实施例中，装置可以包括延伸到第一导电类型的半导体区域中的沟槽，设置在沟槽中的电极以及与沟槽的侧壁邻接的第一导电类型的源极区域。 该装置可以包括设置在源极区域下方的半导体区域中的第二导电类型的第一阱区域，并且与第二导电类型与第一导电类型相反的电极的横向侧壁邻接沟槽的侧壁。 该装置还可以包括设置在半导体区域中并邻接沟槽的侧壁的第二导电类型的第二阱区域以及布置在第一阱区域和第二阱区域之间的第一导电类型的第三阱区域。

    Technique for controlling trench profile in semiconductor structures
    88.
    发明授权
    Technique for controlling trench profile in semiconductor structures 有权
    用于控制半导体结构中的沟槽轮廓的技术

    公开(公告)号：US08815744B2

    公开(公告)日：2014-08-26

    申请号：US12109302

    申请日：2008-04-24

    Applicant: Hui Chen ,  Qi Wang ,  Briant Harward ,  James Pan

    Inventor： Hui Chen ,  Qi Wang ,  Briant Harward ,  James Pan

    IPC: H01L21/311

    CPC classification number: H01L21/3065 ,  H01L29/4236 ,  H01L29/66666 ,  H01L29/7827

    Abstract: A method for forming a semiconductor structure includes the following steps. Trenches are formed in a semiconductor region using a masking layer such that the trenches have a first depth, a first width along their bottom, and sidewalls having a first slope. The masking layer is removed, and a bevel etch is performed to taper the sidewalls of the trenches so that the sidewalls have a second slope less than the first slope.

    Abstract translation: 一种形成半导体结构的方法包括以下步骤。 在半导体区域中使用掩模层形成沟槽，使得沟槽具有第一深度，沿其底部的第一宽度和具有第一斜率的侧壁。 去除掩模层，并且执行斜面蚀刻以使沟槽的侧壁逐渐变细，使得侧壁具有小于第一斜率的第二斜率。

    Management of requested or pushed content in communications client devices
    89.
    发明授权
    Management of requested or pushed content in communications client devices 有权
    管理通信客户端设备中的请求或推送内容

    公开(公告)号：US08805775B1

    公开(公告)日：2014-08-12

    申请号：US11249554

    申请日：2005-10-13

    Applicant: James Pan ,  Claudio Lima ,  James Black

    Inventor： James Pan ,  Claudio Lima ,  James Black

    IPC: G06F17/00 ,  G06F7/00

    CPC classification number: G06F17/30902

    Abstract: A system, a method and computer-readable media for managing content received over a network by a client device. A network transmission communicating an item of content is detected by a client device, and a determination is made whether the client device is in a mode of operation that allows the storing of uninvited media content. For example, the client device may be a mobile communication device monitoring the media being transmitted over a broadcast channel. When an item of content is observed traversing the broadcast channel, a set of user-defined preferences is accessed to determine whether to permit receiving the item. If permitted, the item of content is stored in a data store on the client device for subsequent presentation to the user.

    Abstract translation: 一种用于管理由客户端设备通过网络接收的内容的系统，方法和计算机可读介质。 通过客户端装置检测传送内容的网络传输，并且确定客户端装置是否处于允许存储未邀请的媒体内容的操作模式。 例如，客户端设备可以是监视通过广播信道发送的媒体的移动通信设备。 当通过广播频道观察内容项目时，访问一组用户定义的偏好以确定是否允许接收该项目。 如果允许的话，内容项被存储在客户端设备上的数据存储器中，以供随后呈现给用户。

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