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公开(公告)号：US20210159397A1
公开(公告)日：2021-05-27
申请号：US17165309
申请日：2021-02-02
Applicant: TDK CORPORATION
Inventor： Tomoyuki SASAKI , Yohei SHIOKAWA , Atsushi TSUMITA
Abstract: A magnetic memory including a plurality of magnetoresistance effect elements that hold information, each including a first ferromagnetic metal layer with a fixed magnetization direction, a second ferromagnetic metal layer with a varying magnetization direction, and a non-magnetic layer sandwiched between the first and second ferromagnetic metal layers; a plurality of first control elements that control reading of the information, wherein each of the plurality of first ferromagnetic metal layers is connected to a first control element; a plurality of spin-orbit torque wiring lines that extend in a second direction intersecting with a first direction which is a stacking direction of the magnetoresistance effect elements, wherein each of the second ferromagnetic metal layers is joined to one spin-orbit torque wiring line; a plurality of second control elements that control electric current flowing through the spin-orbit torque wiring lines.
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公开(公告)号：US20210151667A1
公开(公告)日：2021-05-20
申请号：US16952274
申请日：2020-11-19
Applicant: TDK CORPORATION
Inventor： Yohei SHIOKAWA , Minoru OTA , Tomoyuki SASAKI , Yoshitomo TANAKA
Abstract: A magnetoresistive effect element includes a magnetization fixed layer, a magnetization free layer, and a non-magnetic spacer layer that is stacked between the magnetization fixed layer and the magnetization free layer. The magnetization free layer includes a first free layer and a second free layer that are formed of a ferromagnetic material, and a magnetic coupling layer that is stacked between the first free layer and the second free layer. The first free layer and the second free layer are magnetically coupled to each other by exchange coupling via the magnetic coupling layer such that magnetization directions of the first free layer and the second free layer are antiparallel to each other. The magnetic coupling layer is a non-magnetic layer that includes Ir and at least one of the following elements: Fe, Co and Ni.
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公开(公告)号：US20210151665A1
公开(公告)日：2021-05-20
申请号：US16625449
申请日：2019-01-09
Applicant: TDK CORPORATION
Inventor： Eiji KOMURA , Tomoyuki SASAKI
Abstract: A spin-orbit torque type magnetization rotational element includes; a spin-orbit torque wiring that extends in a first direction; a first ferromagnetic layer that is laminated in a second direction intersecting the spin-orbit torque wiring; and a first nonmagnetic metal layer and a second nonmagnetic metal layer that are connected to the spin-orbit torque wiring at positions flanking the first ferromagnetic layer in the first direction in a plan view from the second direction, wherein the gravity center of the first ferromagnetic layer is positioned on a side closer to the first nonmagnetic metal layer or the second nonmagnetic metal layer than is a reference point located at the center between the first and second nonmagnetic metal layers in the first direction.
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84.发明申请公开(公告)号：US20200334015A1
公开(公告)日：2020-10-22
申请号：US16759529
申请日：2019-02-27
Applicant: TDK CORPORATION
Inventor： Tatsuo SHIBATA , Tomoyuki SASAKI
Abstract: A multiply and accumulate calculation device includes a multiple calculation unit and a accumulate calculation unit. The multiple calculation unit includes a plurality of multiple calculation elements, which are variable resistance elements, and at least one reference element. The accumulate calculation unit includes an output detector configured to detect a total value of at least outputs from the plurality of multiple calculation elements. Each of the plurality of multiple calculation elements is a magnetoresistance effect element including a magnetized free layer having a magnetic domain wall, a magnetization fixed layer in which a magnetization direction is fixed, and a nonmagnetic layer sandwiched between the magnetized free layer and the magnetized fixed layer. The reference element is a reference magnetoresistance effect element having a magnetization free layer that does not have the magnetic domain wall.
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公开(公告)号：US20200161539A1
公开(公告)日：2020-05-21
申请号：US16748884
申请日：2020-01-22
Applicant: TDK CORPORATION
Inventor： Tomoyuki SASAKI
Abstract: A magnetoresistance effect element is provided in which a MR ratio is not likely to decrease even at a high bias voltage. A magnetoresistance effect element according to an aspect of the present invention includes: a first ferromagnetic metal layer; a second ferromagnetic metal layer; a tunnel barrier layer that is provided between the first ferromagnetic metal layer and the second ferromagnetic metal layer, in which the tunnel barrier layer is formed of a non-magnetic oxide having a cubic crystal structure represented by a compositional formula A1-xA′xO, where A represents a divalent cation, and A′ represents a trivalent cation, and the number of A ions is more than the number ofA′ ions in a primitive lattice of the crystal structure.
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Patent Agency Ranking
公开(公告)号：US20200152862A1
公开(公告)日：2020-05-14
申请号：US16739521
申请日：2020-01-10
Applicant: TDK CORPORATION
Inventor： Tomoyuki SASAKI
IPC: H01L43/08 , G01R33/09 , G11B5/39 , H01F10/14 , H01F10/16 , H01F10/26 , H01F10/32 , H01L43/10 , H01L27/105 , H01L29/82
Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, the tunnel barrier layer is expressed by a composition formula of AB2Ox (0
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87.发明申请公开(公告)号：US20200083439A1
公开(公告)日：2020-03-12
申请号：US16671567
申请日：2019-11-01
Applicant: TDK CORPORATION
Inventor： Tomoyuki SASAKI
Abstract: This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected.
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公开(公告)号：US20200035913A1
公开(公告)日：2020-01-30
申请号：US16504388
申请日：2019-07-08
Applicant: TDK CORPORATION
Inventor： Shinto ICHIKAWA , Katsuyuki NAKADA , Tomoyuki SASAKI
Abstract: A magnetoresistance effect element includes a first ferromagnetic layer, a second ferromagnetic layer, and a tunnel barrier layer that is interposed between the first ferromagnetic layer and the second ferromagnetic layer. The tunnel barrier layer is a stacked body including one or more high-barrier-height layers and one or more low-barrier-height layers, the one or more high-barrier-height layers having a relatively high barrier height with respect to the one or more low-barrier-height layers and the one or more low-barrier-height layers having a relatively low barrier height with respect to the one or more high-barrier-height layers. A minimum difference of barrier height between the one or more high-barrier-height layers and the one or more low-barrier-height layers is equal to or higher than 0.5 eV.
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公开(公告)号：US20190325903A1
公开(公告)日：2019-10-24
申请号：US16277045
申请日：2019-02-15
Applicant: TDK CORPORATION
Inventor： Tomoyuki SASAKI , Katsuyuki NAKADA , Tatsuo SHIBATA
IPC: G11B5/39 , H01F10/32 , H01F10/193 , G11C11/16 , H01L27/105 , H01L27/22 , H01L43/10 , H01L43/08 , H01L29/82
Abstract: A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure represented by a composition formula AGa2Ox (0
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公开(公告)号：US20190244651A1
公开(公告)日：2019-08-08
申请号：US16333176
申请日：2018-07-24
Applicant: TDK CORPORATION
Inventor： Yohei SHIOKAWA , Tomoyuki SASAKI
CPC classification number: G11C11/1673 , G11C11/16 , G11C11/161 , G11C11/1675 , H01F10/325 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01L21/8239 , H01L27/105 , H01L27/228 , H01L29/82 , H01L43/02 , H01L43/06 , H01L43/08 , H01L43/10
Abstract: A spin current magnetoresistance effect element includes a magnetoresistance effect element, a spin-orbit torque wiring that extends in a first direction intersecting a lamination direction of the magnetoresistance effect element and is positioned on a side of the magnetoresistance effect element with the second ferromagnetic metal layer, and a control unit configured to control a direction of a current during reading. The control unit is connected to at least one of a first and second point, which are positions with the magnetoresistance effect element interposed therebetween in the first direction in the spin-orbit torque wiring, and a third point on a side of the magnetoresistance effect element with the first ferromagnetic layer. The control unit shunts a read current during reading from the third point toward the first point and the second point or merges the read current toward the third point from the first point and the second point.
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