摘要:
In a method of forming a pattern in semiconductor device manufacturing process, a thin film consisting of a silicon nitride film is formed on a substrate. Ga ions are implanted by a focussed ion beam into a selected region of the thin film. At this point, a pattern to be formed is defined by the selected region. Subsequently, the thin film is dry etched by CF.sub.4. At this point, the selected region into which the ions are implanted functions as an etching inhibition region.
摘要:
In order to provide a spot size converter and a method for making the same which enable the optical connection with low loss and are able to reduce the excess loss for the position misalignment in mounting, a spot size converter according to an exemplary aspect of the present invention includes: a substrate on which an optical waveguide including a first core is laminated and which includes a notch; a core reducing part which is formed so that a cross-section area of the first core may gradually decrease toward an end part of the first core in the direction of light propagation; a second core which surrounds the core reducing part and is made of a material whose refractive index is smaller than that of the first core; a peripheral clad which surrounds the second core and is made of a material whose refractive index is smaller than that of the second core; and a lower clad which is formed in a lower part of the second core and includes the peripheral clad; wherein the lower clad is formed in the notch.
摘要:
A television (100) includes: a receiving section (202) for receiving additional information which is added to and transmitted along with a broadcast content; a processing section (222) for processing additional information so that a mobile device (120) can obtain information that is specific to unique information which the television (100) has; and a transmitting section (224) for transmitting processed additional information.
摘要:
An optical waveguide type optical terminator forms an optical waveguide structure including at least an optical absorption core (103) which is formed on a clad layer (102) and includes a portion composed of silicon in which an impurity of 1019 cm−3 or more is doped, and is used by being optically connected in series with an optical waveguide including a core (105) composed of silicon. The optical absorption core (103) is sufficient provided that, at least, an impurity of around 1019 cm−3 is doped therein. For example, its impurity concentration is sufficient provided that it falls within a range of 1019 -1020 cm−3. The existence of this impurity causes absorption of light in the optical absorption core (103).
摘要:
A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.
摘要:
A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a conduction state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.
摘要:
A transmission apparatus for differential communication includes a driver bridge circuit and a pair of noise protection circuits. The driver bridge circuit includes four output devices that are independently connected between each of a pair of transmission lines and a power line or a ground line. Each noise protection circuit is provided to a corresponding transmission lines. Each noise protection circuit includes a ground potential detector and an impedance controller. The ground potential detector detects a potential of the corresponding transmission line with respect to the ground line. The impedance controller causes an impedance of the corresponding transmission line with respect to the ground line to become equal to an impedance of the other transmission line with respect to the ground line, when the detected potential becomes outside a predetermined potential range.
摘要:
An apparatus is provided for controlling a graphic equalizer which is implemented by digital filters, each being assignable to a frequency band for regulating a level of the frequency band. In the apparatus, a set of control devices are provided in correspondence to respective frequency bands, each control device being operable to specify the level of the corresponding frequency band to either of a reference level or other level than the reference level. An assignment section operates when a number of the digital filters is less than a total number of the frequency bands, for assigning the digital filters to the frequency bands which are specified with the levels other than the reference level. A control section controls remaining digital filters which are not assigned to any of the frequency bands in a through state. A disabling section operates when the assignment section assigns all of the digital filters to the frequency bands which are specified with levels other than the reference level, for disabling operation of a control device which currently specifies the reference level.
摘要:
A switching circuit includes: a transistor having a first electrode, a second electrode and a control electrode; a zener diode; and a capacitor. A connection between the first electrode and the second electrode is capable of temporally switching between a condition state and a non-conduction state by switching a control voltage of the transistor. The zener diode and the capacitor are coupled in series between the first electrode and the control electrode of the transistor. The first electrode is a drain or a collector.
摘要:
A magneto-resistance effect element includes: a first ferromagnetic layer serving as a magnetization fixed layer; a magnetization free layer including a second ferromagnetic layer provided on one side of the first ferromagnetic layer, a third ferromagnetic layer which is formed on an opposite side of the second ferromagnetic layer from the first ferromagnetic layer and has a film face having an area larger than that of the second ferromagnetic layer and whose magnetization direction is changeable by an external magnetic field, and an intermediate layer provided between the second ferromagnetic layer and the third ferromagnetic layer; and a tunnel baffler layer provided between the first ferromagnetic layer and the second ferromagnetic layer. The second ferromagnetic layer and the third ferromagnetic layer are magnetically coupled via the intermediate layer, and an aspect ratio of a plane shape of the third ferromagnetic layer is within a range from 1 to 2.