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    LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film
    89.
    发明授权
    LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film 有权
    LnCuO（S，Se，Te）单晶薄膜，其制造方法，以及使用单晶薄膜的光学器件或电子器件

    公开(公告)号：US07323356B2

    公开(公告)日：2008-01-29

    申请号：US10505219

    申请日：2003-02-19

    申请人： Hideo Hosono ,  Masahiro Hirano ,  Hiromichi Ota ,  Masahiro Orita ,  Hidenori Hiramatsu ,  Kazushige Ueda

    发明人： Hideo Hosono ,  Masahiro Hirano ,  Hiromichi Ota ,  Masahiro Orita ,  Hidenori Hiramatsu ,  Kazushige Ueda

    IPC分类号： H01L21/06 ,  C30B1/02 ,  C04B35/50

    CPC分类号： C30B33/00 ,  C30B1/02 ,  C30B23/02 ,  C30B29/22 ,  H01L21/0242 ,  H01L21/02439 ,  H01L21/02483 ,  H01L21/02485 ,  H01L21/02491 ,  H01L21/02565 ,  H01L21/02568 ,  H01L21/02631 ,  H01L29/24 ,  H01L33/26

    摘要： Disclosed is a method of producing an LnCuOX single-crystal thin film (wherein Ln is at least one selected from the group consisting of lanthanide elements and yttrium, and X is at least one selected from the group consisting of S, Se and Te), which comprises the steps of growing a base thin film on a single-crystal substrate, depositing an amorphous or polycrystalline LnCuOX thin film on the base thin film to form a laminated film, and then annealing the laminated film at a high temperature of 500° C. or more. While a conventional LnCuOX film produced by growing an amorphous film through a sputtering process under appropriate conditions and then annealing the film at a high temperature was unexceptionally a polycrystalline substance incapable of achieving high emission efficiency and electron mobility required for a material of light-emitting devices or electronic devices, the method of the present invention can grow a thin film with excellent crystallinity suitable as a single crystal to an building black of light-emitting diodes, semiconductor leasers, filed-effect transistors, or a hetero-bipolar transistors.

    摘要翻译： 公开了一种LnCuOX单晶薄膜的制造方法（其中Ln为选自镧系元素和钇中的至少一种，X为选自S，Se和Te中的至少一种）， 其包括以下步骤：在单晶衬底上生长基底薄膜，在基底薄膜上沉积非晶或多晶LnCuOX薄膜以形成层压膜，然后在500℃的高温下对层压膜进行退火 。 或者更多。 虽然通过在适当条件下通过溅射工艺生长非晶膜然后在高温下退火膜而制备的常规LnCuOX膜通常是不能实现发光器件材料所需的高发射效率和电子迁移率的多晶物质 或电子器件，本发明的方法可以将适合作为单晶的优异结晶度的薄膜生长到发光二极管，半导体雷达，场效应晶体管或异质双极晶体管的建筑物黑色。