公开(公告)号：US07693507B2

公开(公告)日：2010-04-06

申请号：US11394538

申请日：2006-03-31

申请人： Hidehiko Suzuki ,  Yoshihiro Kubota ,  Tatsuhiro Ando ,  Takuji Oyama

发明人： Hidehiko Suzuki ,  Yoshihiro Kubota ,  Tatsuhiro Ando ,  Takuji Oyama

IPC分类号： H04M1/66

CPC分类号： H04W12/06 ,  H04L63/104 ,  H04W12/08 ,  H04W84/12

摘要： A wireless LAN control device includes a wireless LAN control unit having a transmitting/receiving unit performing communications with a plurality of wireless LAN access points belonging to different user groups and a wireless LAN connection control unit. The wireless connection control unit executes control of transferring a user authentication request received by the transmitting/receiving unit via one of the plurality of wireless LAN access points and given from a wireless LAN terminal belonging to one of the user groups toward an authentication server that should execute an authentication process in response to the user authentication request, and transmitting an authentication result given from the authentication server in response to the user authentication request to the wireless LAN terminal via one of the plurality of wireless LAN access points.

摘要翻译： 无线LAN控制装置包括无线LAN控制单元，其具有与属于不同用户组的多个无线LAN接入点进行通信的发送/接收单元和无线LAN连接控制单元。 无线连接控制单元执行控制，其通过多个无线LAN接入点中的一个无线LAN接入点中的一个接收到的发送/接收单元接收到的用户认证请求，并从属于一个用户组的无线LAN终端向认证服务器发送 响应于用户认证请求执行认证过程，并且通过多个无线LAN接入点中的一个向无线LAN终端发送响应于用户认证请求从认证服务器给出的认证结果。

公开(公告)号：US20100003510A1

公开(公告)日：2010-01-07

申请号：US12457781

申请日：2009-06-22

申请人： Shoji Kano ,  Waichi Yamamura ,  Yoshihiro Kubota

发明人： Shoji Kano ,  Waichi Yamamura ,  Yoshihiro Kubota

IPC分类号： B32B7/00

CPC分类号： H01L21/6831 ,  H01L21/67103 ,  Y10T428/26 ,  Y10T428/263 ,  Y10T428/264 ,  Y10T428/265

摘要： The present invention is a corrosion-resistant multilayer ceramic member including at least: a ceramic substrate, an electrode layer formed on the ceramic substrate, a feeding member that supplies electricity to the electrode layer, and a protection layer that prevents corrosion; wherein the electrode layer is formed on one surface or both surfaces of the ceramic substrate, the feeding member is connected with the electrode layer, the protection layer is formed with a thickness of 0.02 mm or above and 10 mm or less on that surface of the ceramic substrate where the electrode layer is formed so as to cover the electrode layer, and the protection layer contains any one of silicon oxide, rare-earth oxide, aluminum nitride, and aluminum oxide as a main component. Hereby, there is provided a corrosion-resistant multilayer ceramic member that has excellent corrosion resistance and a long life duration even when exposed to a corrosive gas.

摘要翻译： 本发明是一种耐腐蚀性多层陶瓷构件，至少包括：陶瓷基板，形成在陶瓷基板上的电极层，向电极层供电的进给构件和防止腐蚀的保护层; 其中所述电极层形成在所述陶瓷基板的一个表面或两个表面上，所述馈送构件与所述电极层连接，所述保护层在所述表面上形成为0.02mm以上且10mm以下的厚度 陶瓷基板，其中形成电极层以覆盖电极层，并且保护层包含氧化硅，稀土氧化物，氮化铝和氧化铝中的任一种作为主要成分。 因此，提供了即使暴露于腐蚀性气体时也具有优异的耐腐蚀性和长寿命的耐腐蚀性多层陶瓷构件。

公开(公告)号：US20090111237A1

公开(公告)日：2009-04-30

申请号：US12285409

申请日：2008-10-03

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Makoto Kawai ,  Yuuji Tobisaka ,  Koichi Tanaka

IPC分类号： H01L21/762

CPC分类号： H01L21/76254 ,  H01L21/2007 ,  H01L21/26506 ,  H01L21/28167 ,  H01L21/3144 ,  H01L21/32105 ,  H01L29/4908 ,  H01L29/78603

摘要： A consistent reduction in temperature in an SOI substrate manufacturing process is achieved.A gate oxide film provided on an SOI substrate is obtained by laminating a low-temperature thermal oxide film 13 grown at a temperature of 450° C. or below and an oxide film 14 obtained based on a CVD method. Since the thermal oxide film 13 is a thin film of 100 Å or below, a low temperature of 450° C. or below can suffice. The underlying thermal oxide film 13 can suppress a structural defect, e.g., an interface state, and the CVD oxide film 14 formed on the thermal oxide film can be used to adjust a thickness of the gate oxide film. According to such a technique, a conventional general silicon oxide film forming apparatus can be used to form the gate oxide film at a low temperature, thereby achieving a consistent reduction in temperature in the SOI substrate manufacturing process.

摘要翻译： 实现SOI衬底制造工艺中温度的一致降低。 通过层叠在450℃以下的温度下生长的低温热氧化膜13和基于CVD法得到的氧化膜14，可以得到设置在SOI衬底上的栅极氧化膜。 由于热氧化膜13是100以下的薄膜，所以450℃以下的低温就可以了。 下面的热氧化膜13可以抑制结构缺陷，例如界面状态，并且可以使用形成在热氧化膜上的CVD氧化膜14来调节栅极氧化膜的厚度。 根据这种技术，可以使用常规的一般的氧化硅膜形成装置在低温下形成栅极氧化膜，从而在SOI衬底制造工艺中实现一致的温度降低。

公开(公告)号：US20090107635A1

公开(公告)日：2009-04-30

申请号：US12285108

申请日：2008-09-29

申请人： Shoji Kano ,  Waichi Yamamura ,  Yoshihiro Kubota

发明人： Shoji Kano ,  Waichi Yamamura ,  Yoshihiro Kubota

IPC分类号： H01L21/302 ,  H01L21/30

CPC分类号： H01L21/6831 ,  H01L21/67103 ,  H01L21/6833 ,  H01L21/68757 ,  H02N13/00 ,  H05B3/143

摘要： The present invention relates to a corrosion-resistant multilayer ceramic member consisting at least of: a ceramic support substrate; an electrode layer formed on the ceramic support substrate; a power-supply member connected to the electrode layer; an insulating protection layer formed on the ceramic support substrate to cover the electrode layer; and a ceramic protection substrate of which at least a part is provided on the insulating protection layer. Thereby, there is provided a long-life corrosion-resistant multilayer ceramic member excellent in corrosion resistance even when exposed to a corrosive gas.

摘要翻译： 本发明涉及一种耐腐蚀多层陶瓷构件，其至少包括：陶瓷支撑基板; 形成在所述陶瓷支撑基板上的电极层; 连接到所述电极层的电源构件; 形成在所述陶瓷支撑基板上以覆盖所述电极层的绝缘保护层; 以及陶瓷保护基板，其至少一部分设置在绝缘保护层上。 由此，即使在暴露于腐蚀性气体的情况下，也能够提供耐腐蚀性优异的长寿命耐腐蚀性的多层陶瓷部件。

公开(公告)号：US20090023270A1

公开(公告)日：2009-01-22

申请号：US12153160

申请日：2008-05-14

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： H01L21/762

CPC分类号： H01L21/76254

摘要： There is disclosed a method for manufacturing an SOI wafer comprising at least: implanting a hydrogen ion, a rare gas ion, or both the ions into a donor wafer formed of a silicon wafer or a silicon wafer having an oxide film formed on a surface thereof from a surface of the donor wafer, thereby forming an ion implanted layer; performing a plasma activation treatment with respect to at least one of an ion implanted surface of the donor wafer and a surface of a handle wafer, the surface of the handle wafer is to be bonded to the ion implanted surface; closely bonding these surfaces to each other; mechanically delaminating the donor wafer at the ion implanted layer as a boundary and thereby reducing a film thickness thereof to provide an SOI layer, and performing a heat treatment at 600 to 1000° C.; and polishing a surface of the SOI layer for 10 to 50 nm based on chemical mechanical polishing.A method for manufacturing with excellent productivity an SOI wafer having an SOI layer with a mirror-finished surface and high film thickness uniformity can be provided.

摘要翻译： 公开了一种制造SOI晶片的方法，该方法至少包括：将氢离子，稀有气体离子或两者离子注入到由硅晶片或具有在其表面上形成的氧化膜的硅晶片形成的施主晶片中 从施主晶片的表面，从而形成离子注入层; 对施主晶片的离子注入表面和处理晶片的表面中的至少一个进行等离子体激活处理，把手晶片的表面与离子注入表面结合; 将这些表面彼此紧密结合; 以离子注入层的施主晶片作为边界进行机械分层，由此降低其膜厚以提供SOI层，并在600〜1000℃下进行热处理。 并且基于化学机械抛光将SOI层的表面抛光10至50nm。 可以提供具有优异的生产率的具有SOI层的具有镜面精加工表面和高膜厚均匀性的SOI晶片的方法。

公开(公告)号：US20080245408A1

公开(公告)日：2008-10-09

申请号：US12076916

申请日：2008-03-25

申请人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

发明人： Atsuo Ito ,  Shoji Akiyama ,  Makoto Kawai ,  Koichi Tanaka ,  Yuuji Tobisaka ,  Yoshihiro Kubota

IPC分类号： H01L31/04 ,  H01L31/028

CPC分类号： H01L31/1804 ,  H01L31/056 ,  H01L31/068 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

摘要： There is disclosed a method for manufacturing a single-crystal silicon solar cell including the steps of: implanting a hydrogen ion or a rare gas ion into a single-crystal silicon substrate; forming a transparent insulator layer on a metal substrate; performing a surface activation treatment with respect to at least one of the ion implanted surface and a surface of the transparent insulator layer; bonding these surfaces; mechanically delaminating the single-crystal silicon substrate to provide a single-crystal silicon layer; forming a plurality of second conductivity type diffusion regions in the delaminated surface side of the single-crystal silicon layer so that a plurality of first conductivity type regions and the plurality of second conductivity regions are present in the delaminated surface of the single-crystal silicon layer; respectively forming a plurality of individual electrodes on the plurality of first and second conductivity type regions of the single-crystal silicon layer; forming respective collecting electrodes; and forming a transparent protective film.

摘要翻译： 公开了一种制造单晶硅太阳能电池的方法，包括以下步骤：将氢离子或稀有气体离子注入到单晶硅衬底中; 在金属基板上形成透明绝缘体层; 对所述离子注入表面和所述透明绝缘体层的表面中的至少一个进行表面活化处理; 粘合这些表面; 机械分层单晶硅衬底以提供单晶硅层; 在单晶硅层的分层表面侧形成多个第二导电型扩散区域，使得多个第一导电型区域和多个第二导电区域存在于单晶硅层的分层表面 ; 分别在单晶硅层的多个第一和第二导电类型区域上形成多个单独电极; 形成各个集电极; 并形成透明保护膜。

公开(公告)号：US20080174005A1

公开(公告)日：2008-07-24

申请号：US12018263

申请日：2008-01-23

申请人： Yoshihiro Kubota ,  Shirou Youda ,  Kazuto Tsuji

发明人： Yoshihiro Kubota ,  Shirou Youda ,  Kazuto Tsuji

IPC分类号： H01L23/492 ,  H01L21/60

CPC分类号： H05K3/0052 ,  H01L23/13 ,  H01L23/3128 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/49838 ,  H01L24/28 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/97 ,  H01L2224/0401 ,  H01L2224/05624 ,  H01L2224/2919 ,  H01L2224/29339 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48228 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48724 ,  H01L2224/48744 ,  H01L2224/48824 ,  H01L2224/48844 ,  H01L2224/73265 ,  H01L2224/85444 ,  H01L2224/97 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/20753 ,  H05K3/242 ,  H05K3/28 ,  H05K3/284 ,  H05K2201/0909 ,  H01L2924/00014 ,  H01L2924/0665 ,  H01L2224/85 ,  H01L2224/83 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/92247

摘要： An electronic device has a substrate that has first and second peripheral portions. The first peripheral portion provides a shearing position for separation. The electronic device has a plurality of wiring layers one of which forms a functional surface wiring on the substrate, an electronic element mounted on the substrate, and an encapsulation member formed over the substrate and the electronic element. The surface wiring is selectively disposed under the encapsulation member and in an area adjacent to the second peripheral portion.

摘要翻译： 电子设备具有具有第一和第二周边部分的基板。 第一周边部分提供用于分离的剪切位置。 电子器件具有多个布线层，其中一个在基板上形成功能表面布线，安装在基板上的电子元件以及形成在基板和电子元件上的封装元件。 表面布线选择性地设置在封装构件的下方和与第二周边部分相邻的区域中。

公开(公告)号：US20080118757A1

公开(公告)日：2008-05-22

申请号：US11979447

申请日：2007-11-02

申请人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

发明人： Shoji Akiyama ,  Yoshihiro Kubota ,  Atsuo Ito ,  Koichi Tanaka ,  Makoto Kawai ,  Yuuji Tobisaka

IPC分类号： B32B9/00 ,  B29C65/00

CPC分类号： H01L21/76254 ,  C30B29/06 ,  C30B33/00 ,  H01L21/2007 ,  H01L29/78603 ,  Y10S438/967 ,  Y10T428/31612

摘要： Hydrogen ions are implanted to a surface (main surface) of the single crystal Si substrate 10 to form the hydrogen ion implanted layer (ion-implanted damage layer) 11. As a result of the hydrogen ion implantation, the hydrogen ion implanted boundary 12 is formed. The single crystal Si substrate 10 is bonded to the quartz substrate 20 having a carbon concentration of 100 ppm or higher, and an external shock is applied near the ion-implanted damage layer 11 to delaminate the Si crystal film along the hydrogen ion implanted boundary 12 of the single crystal Si substrate 10 out of the bonded substrate. Then, the surface of the resultant silicon thin film 13 is polished to remove a damaged portion, so that an SOQ substrate can be fabricated. There can be provided an SOQ substrate highly adaptable to a semiconductor device manufacturing process.

摘要翻译： 将氢离子注入单晶Si衬底10的表面（主表面），以形成氢离子注入层（离子注入损伤层）11。 作为氢离子注入的结果，形成氢离子注入边界12。 将单晶Si衬底10接合到碳浓度为100ppm以上的石英衬底20上，并且在离子注入损伤层11附近施加外部冲击，以沿着氢离子注入边界12剥离Si晶体膜 的单晶Si衬底10。 然后，对所得的硅薄膜13的表面进行抛光以去除损坏部分，从而可以制造出SOQ基板。 可以提供高度适应于半导体器件制造工艺的SOQ衬底。

公开(公告)号：US20080099067A1

公开(公告)日：2008-05-01

申请号：US11976026

申请日：2007-10-19

申请人： Atsuo Ito ,  Shoji Akiyama ,  Masahiro Furuya ,  Makoto Kawai ,  Koichi Tanaka ,  Yoshihiro Kubota ,  Yuuji Tobisaka

发明人： Atsuo Ito ,  Shoji Akiyama ,  Masahiro Furuya ,  Makoto Kawai ,  Koichi Tanaka ,  Yoshihiro Kubota ,  Yuuji Tobisaka

IPC分类号： B05D5/12 ,  H01L31/00

CPC分类号： H01L31/1804 ,  H01L31/0682 ,  H01L31/186 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

摘要： There is disclosed a method for producing a single crystal silicon solar cell comprising the steps of: implanting hydrogen ions or rare gas ions into a single crystal silicon substrate through an ion implanting surface thereof to form an ion implanted layer in the single crystal silicon substrate; closely contacting the single crystal silicon substrate and a transparent insulator substrate with each other via a transparent adhesive while using the ion implanting surface as a bonding surface; curing the transparent adhesive; applying an impact to the ion implanted layer to mechanically delaminate the single crystal silicon substrate thereat to leave a single crystal silicon layer; forming a plurality of diffusion regions having a second conductivity type at the delaminated surface side of the single crystal silicon layer, in a manner that a plurality of first conductivity-type regions and a plurality of second conductivity-type regions are present at the delaminated surface of the single crystal silicon layer; forming pluralities of individual electrodes on the pluralities of first and second conductivity-type regions of the single crystal silicon layer, respectively; and forming collector electrodes for the individual electrodes, respectively. There can be provided a single crystal silicon solar cell as a see-through type solar cell, including a thin-film light conversion layer made of single crystal silicon having a higher crystallinity.

摘要翻译： 公开了一种用于制造单晶硅太阳能电池的方法，包括以下步骤：通过其离子注入表面将氢离子或稀有气体离子注入到单晶硅衬底中，以在单晶硅衬底中形成离子注入层; 通过透明粘合剂将单晶硅衬底和透明绝缘体衬底彼此紧密接触，同时使用离子注入表面作为结合表面; 固化透明胶; 对离子注入层施加冲击以在其上机械分层单晶硅衬底以留下单晶硅层; 在单晶硅层的分层表面侧形成具有第二导电类型的多个扩散区域，使得多个第一导电类型区域和多个第二导电类型区域存在于分层表面 的单晶硅层; 在单晶硅层的多个第一和第二导电类型区域上分别形成多个独立电极; 并分别形成各个电极的集电极。 可以提供作为透明型太阳能电池的单晶硅太阳能电池，其包括由具有较高结晶度的单晶硅制成的薄膜光转换层。

公开(公告)号：US20070241096A1

公开(公告)日：2007-10-18

申请号：US11783581

申请日：2007-04-10

申请人： Noboru Kimura ,  Yoshihiro Kubota ,  Waichi Yamamura ,  Shoji Kano

发明人： Noboru Kimura ,  Yoshihiro Kubota ,  Waichi Yamamura ,  Shoji Kano

IPC分类号： F27D11/00

CPC分类号： H01L21/67103 ,  H05B3/143

摘要： There is disclosed a heating element 10 comprising: at least a heat-resistant base member 1; a conductive layer 3 having a heater pattern 3a formed on the heat-resistant base member; a protection layer 4 with an insulating property formed on the conductive layer; and a corrosion-resistant layer 4p that is an oxide having an oxygen amount of stoichiometric ratio or less formed on the protection layer. There can be provided a heating element in which a corrosion-resistant layer whose resistivity or hardness is controlled is formed on a protection layer and through which the corrosive gas is difficult to be transmitted even under an environment of a high temperature and a corrosive gas and by which degradation due to corrosion of a conductive layer, particularly, a power-supply-terminal portion can be avoided and additionally which can fulfill a high function as an electrostatic chuck even when having a chuck pattern and which has a long operation life and is capable of being produced at a low cost.

摘要翻译： 公开了一种加热元件10，其包括：至少一个耐热底座件1; 具有形成在耐热基体上的加热器图案3a的导电层3; 在导电层上形成具有绝缘性的保护层4; 以及作为形成在保护层上的具有化学计量比的氧量的氧化物的耐腐蚀层4p。 可以提供一种加热元件，其中在保护层上形成电阻率或硬度被控制的耐腐蚀层，即使在高温环境和腐蚀性气体的环境下腐蚀性气体难以透过， 由此，能够避免由于导电层，特别是电源端子部分的腐蚀而导致的劣化，另外即使具有卡盘图案也能够实现作为静电卡盘的高功能，并且具有长的使用寿命，并且是 能够以低成本生产。