利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

100 条记录 (耗时 0.021 秒)

    Methods of etching polysilicon and methods of forming pluralities of capacitors
    81.
    发明申请
    Methods of etching polysilicon and methods of forming pluralities of capacitors 有权
    蚀刻多晶硅的方法和形成多个电容器的方法

    公开(公告)号：US20080090416A1

    公开(公告)日：2008-04-17

    申请号：US11580418

    申请日：2006-10-11

    申请人： Prashant Raghu ,  Vishwanath Bhat ,  Niraj Rana

    发明人： Prashant Raghu ,  Vishwanath Bhat ,  Niraj Rana

    IPC分类号： H01L21/302

    CPC分类号： H01L21/32134

    摘要： A method of etching polysilicon includes exposing a substrate comprising polysilicon to a solution comprising water, HF, and at least one of a conductive metal nitride, Pt, and Au under conditions effective to etch polysilicon from the substrate. In one embodiment, a substrate first region comprising polysilicon and a substrate second region comprising at least one of a conductive metal nitride, Pt, and Au is exposed to a solution comprising water and HF. The solution is devoid of any detectable conductive metal nitride, Pt, and Au prior to the exposing. At least some of the at least one are etched into the solution upon the exposing. Then, polysilicon is etched from the first region at a faster rate than any etch rate of the first region polysilicon prior to the etching of the at least some of the conductive metal nitride, Pt, and Au.

    摘要翻译： 蚀刻多晶硅的方法包括在有效从衬底上蚀刻多晶硅的条件下将包括多晶硅的衬底暴露于包含水，HF和至少一种导电金属氮化物Pt和Au的溶液中。 在一个实施例中，包括多晶硅的衬底第一区域和包括导电金属氮化物，Pt和Au中的至少一个的衬底第二区域暴露于包含水和HF的溶液中。 该溶液在曝光之前没有任何可检测的导电金属氮化物，Pt和Au。 至少一种至少一种在曝光时被蚀刻到溶液中。 然后，在蚀刻至少一些导电金属氮化物Pt和Au之前，以比第一区域多晶硅的任何蚀刻速率更快的速率从第一区域蚀刻多晶硅。

    Methods of forming capacitors
    83.
    发明申请
    Methods of forming capacitors 失效
    形成电容器的方法

    公开(公告)号：US20050032325A1

    公开(公告)日：2005-02-10

    申请号：US10914824

    申请日：2004-08-09

    申请人： Vishwanath Bhat ,  Chris Carlson ,  F. Gealy

    发明人： Vishwanath Bhat ,  Chris Carlson ,  F. Gealy

    IPC分类号： H01G4/08 ,  H01G4/12 ,  H01G4/33 ,  H01L21/02 ,  H01L21/316 ,  H01L21/4763 ,  H01L21/31 ,  H01L21/20 ,  H01L21/469

    CPC分类号： H01G4/085 ,  H01G4/1272 ,  H01G4/33 ,  H01L21/02178 ,  H01L21/0228 ,  H01L21/31616 ,  H01L21/31683 ,  H01L28/40

    摘要： A method of forming a capacitor includes forming a conductive metal first electrode layer over a substrate, with the conductive metal being oxidizable to a higher degree at and above an oxidation temperature as compared to any degree of oxidation below the oxidation temperature. At least one oxygen containing vapor precursor is fed to the conductive metal first electrode layer below the oxidation temperature under conditions effective to form a first portion oxide material of a capacitor dielectric region over the conductive metal first electrode layer. At least one vapor precursor is fed over the first portion at a temperature above the oxidation temperature effective to form a second portion oxide material of the capacitor dielectric region over the first portion. The oxide material of the first portion and the oxide material of the second portion are common in chemical composition. A conductive second electrode layer is formed over the second portion oxide material of the capacitor dielectric region.

    摘要翻译： 形成电容器的方法包括在衬底上形成导电金属第一电极层，与在氧化温度以下的任何氧化度相比，导电金属可以在氧化温度以上高于可氧化的程度。 在导电金属第一电极层上有效形成电容器电介质区域的第一部分氧化物材料的条件下，在氧化温度以下将至少一种含氧气体前体供给至导电金属第一电极层。 至少一种蒸气前体在高于氧化温度的温度下在第一部分上进料，有效地在第一部分上形成电容器电介质区域的第二部分氧化物材料。 第一部分的氧化物材料和第二部分的氧化物材料在化学组成中是常见的。 在电容器电介质区域的第二部分氧化物材料上形成导电的第二电极层。

    Multi-Material Structures, Semiconductor Constructions and Methods of Forming Capacitors
    85.
    发明申请
    Multi-Material Structures, Semiconductor Constructions and Methods of Forming Capacitors 有权
    多材料结构，半导体结构和形成电容器的方法

    公开(公告)号：US20140015097A1

    公开(公告)日：2014-01-16

    申请号：US13546927

    申请日：2012-07-11

    申请人： Joseph Neil Greeley ,  Duane M. Goodner ,  Vishwanath Bhat ,  Vassil N. Antonov ,  Prashant Raghu

    发明人： Joseph Neil Greeley ,  Duane M. Goodner ,  Vishwanath Bhat ,  Vassil N. Antonov ,  Prashant Raghu

    IPC分类号： H01L29/02 ,  H01L21/02

    CPC分类号： H01L28/75 ,  B82Y30/00 ,  H01L27/10808 ,  H01L27/10852 ,  H01L28/65 ,  H01L28/90 ,  Y10S977/932 ,  Y10T428/265

    摘要： Some embodiments include a method of forming a capacitor. An opening is formed through a silicon-containing mass to a base, and sidewalls of the opening are lined with protective material. A first capacitor electrode is formed within the opening and has sidewalls along the protective material. At least some of the silicon-containing mass is removed with an etch. The protective material protects the first capacitor electrode from being removed by the etch. A second capacitor electrode is formed along the sidewalls of the first capacitor electrode, and is spaced from the first capacitor electrode by capacitor dielectric. Some embodiments include multi-material structures having one or more of aluminum nitride, molybdenum nitride, niobium nitride, niobium oxide, silicon dioxide, tantalum nitride and tantalum oxide. Some embodiments include semiconductor constructions.

    摘要翻译： 一些实施例包括形成电容器的方法。 通过含硅物质向基底形成开口，并且开口的侧壁衬有保护材料。 第一电容器电极形成在开口内并具有保护材料的侧壁。 用蚀刻去除至少一些含硅物质。 保护材料保护第一电容器电极不被蚀刻除去。 沿着第一电容器电极的侧壁形成第二电容器电极，并且通过电容器电介质与第一电容器电极间隔开。 一些实施例包括具有氮化铝，氮化钼，氮化铌，氧化铌，二氧化硅，氮化钽和氧化钽中的一种或多种的多材料结构。 一些实施例包括半导体结构。

    Methods of forming rutile titanium dioxide and associated methods of forming semiconductor structures
    86.
    发明授权
    Methods of forming rutile titanium dioxide and associated methods of forming semiconductor structures 有权
    形成金红石型二氧化钛的方法和形成半导体结构的相关方法

    公开(公告)号：US08609553B2

    公开(公告)日：2013-12-17

    申请号：US13021895

    申请日：2011-02-07

    申请人： Tsai-Yu Huang ,  Vishwanath Bhat ,  Vassil Antonov ,  Chris Carlson

    发明人： Tsai-Yu Huang ,  Vishwanath Bhat ,  Vassil Antonov ,  Chris Carlson

    IPC分类号： H01L21/31

    CPC分类号： H01L27/108 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/321 ,  H01L28/40

    摘要： Methods of forming rutile titanium dioxide. The method comprises exposing a transition metal (such as V, Cr, W, Mn, Ru, Os, Rh, Ir, Pt, Ge, Sn, or Pb) to oxygen gas (O2) to oxidize the transition metal. Rutile titanium dioxide is formed over the oxidized transition metal. The rutile titanium dioxide is formed by atomic layer deposition by introducing a gaseous titanium halide precursor and water to the oxidized transition metal. Methods of forming semiconductor structures having rutile titanium dioxide are also disclosed.

    摘要翻译： 形成金红石二氧化钛的方法。 该方法包括将过渡金属（例如V，Cr，W，Mn，Ru，Os，Rh，Ir，Pt，Ge，Sn或Pb）暴露于氧气（O 2）以氧化过渡金属。 在氧化过渡金属上形成金红石二氧化钛。 金红石型二氧化钛是通过将氧化钛前体和水引入到氧化过渡金属中而通过原子层沉积形成的。 还公开了形成具有金红石型二氧化钛的半导体结构的方法。

    Seat track fitting
    87.
    发明授权
    Seat track fitting 有权
    座椅轨道配件

    公开(公告)号：US08371781B2

    公开(公告)日：2013-02-12

    申请号：US12822158

    申请日：2010-06-23

    申请人： Philippe Roy ,  Peter Driessen ,  Vishwanath Bhat

    发明人： Philippe Roy ,  Peter Driessen ,  Vishwanath Bhat

    IPC分类号： B60P7/08

    CPC分类号： B64D11/0696 ,  Y10T29/49947 ,  Y10T403/32467

    摘要： Described are track fitting assemblies having a main body, at least one pre-loaded stud assembly, and a track comprising a pair of lips. The at least one pre-loaded stud assembly includes a stud and a compressing device, wherein the stud does not contact the compressing device in a clamped position and does not contact the pair of lips in an unclamped position. As examples, track fitting assemblies also include at least one shear plunger assembly having a shear pin and a button, wherein the button extends from the main body and the shear pin is positioned within the main body in a disengaged position, and the button is positioned flush with the main body and the shear pin is extended from the main body in an engaged position.

    摘要翻译： 描述的是具有主体，至少一个预加载螺柱组件和包括一对唇缘的轨道的轨道装配组件。 所述至少一个预加载螺柱组件包括螺柱和压缩装置，其中所述螺柱在夹紧位置不接触所述压缩装置，并且在未夹紧位置不接触所述一对唇缘。 作为示例，轨道装配组件还包括至少一个具有剪切销和按钮的剪切柱塞组件，其中按钮从主体延伸并且剪切销位于主体内处于脱离位置，并且按钮被定位 与主体齐平并且剪切销从主体在接合位置延伸。

    METHODS OF FORMING RUTILE TITANIUM DIOXIDE AND ASSOCIATED METHODS OF FORMING SEMICONDUCTOR STRUCTURES
    90.
    发明申请
    METHODS OF FORMING RUTILE TITANIUM DIOXIDE AND ASSOCIATED METHODS OF FORMING SEMICONDUCTOR STRUCTURES 有权
    形成二氧化钛的方法和形成半导体结构的相关方法

    公开(公告)号：US20120202356A1

    公开(公告)日：2012-08-09

    申请号：US13021895

    申请日：2011-02-07

    申请人： Tsai-Yu Huang ,  Vishwanath Bhat ,  Vassil Antonov ,  Chris Carlson

    发明人： Tsai-Yu Huang ,  Vishwanath Bhat ,  Vassil Antonov ,  Chris Carlson

    IPC分类号： H01L21/31 ,  C01G23/07

    CPC分类号： H01L27/108 ,  H01L21/02186 ,  H01L21/0228 ,  H01L21/02304 ,  H01L21/321 ,  H01L28/40

    摘要： Methods of forming rutile titanium dioxide. The method comprises exposing a transition metal (such as V, Cr, W, Mn, Ru, Os, Rh, Ir, Pt, Ge, Sn, or Pb) to oxygen gas (O2) to oxidize the transition metal. Rutile titanium dioxide is formed over the oxidized transition metal. The rutile titanium dioxide is formed by atomic layer deposition by introducing a gaseous titanium halide precursor and water to the oxidized transition metal. Methods of forming semiconductor structures having rutile titanium dioxide are also disclosed.

    摘要翻译： 形成金红石二氧化钛的方法。 该方法包括将过渡金属（例如V，Cr，W，Mn，Ru，Os，Rh，Ir，Pt，Ge，Sn或Pb）暴露于氧气（O 2）以氧化过渡金属。 在氧化过渡金属上形成金红石二氧化钛。 金红石型二氧化钛是通过将氧化钛前体和水引入到氧化过渡金属中而通过原子层沉积形成的。 还公开了形成具有金红石型二氧化钛的半导体结构的方法。