公开(公告)号：US09165832B1

公开(公告)日：2015-10-20

申请号：US14320419

申请日：2014-06-30

申请人： James S. Papanu ,  Wei-Sheng Lei ,  Jungrae Park ,  Alexander Lerner ,  Brad Eaton ,  Ajay Kumar

发明人： James S. Papanu ,  Wei-Sheng Lei ,  Jungrae Park ,  Alexander Lerner ,  Brad Eaton ,  Ajay Kumar

IPC分类号： H01L21/00 ,  H01L21/78 ,  H01L21/304 ,  H01L21/268 ,  H01L21/683

CPC分类号： H01L21/78 ,  H01L21/268 ,  H01L21/31105 ,  H01L21/32131 ,  H01L21/67207 ,  H01L21/6836 ,  H01L23/544 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2223/54426 ,  H01L2223/5446 ,  H01L2924/0002 ,  H01L2924/00

摘要： A method and system of hybrid laser dicing are described. In one embodiment, a method includes focusing a laser beam inside a substrate in regions between integrated circuits, inducing defects inside the substrate in the regions. The method involves patterning a surface of the substrate with a laser scribing process in the regions after inducing the defects in the substrate. The method further involves singulating the integrated circuits at the regions with the induced defects. In another embodiment, a system includes a first laser module configured to focus a laser beam inside a substrate in regions between integrated circuits, inducing defects inside the substrate in the regions. A second laser module is configured to pattern a surface of the substrate with a laser scribing process in the regions after inducing the defects. A tape extender is configured to stretch tape over which the substrate is mounted, singulating the integrated circuits.

摘要翻译： 描述了混合激光切割的方法和系统。 在一个实施例中，一种方法包括在集成电路之间的区域内将激光束聚焦在衬底内，在区域内的衬底内引起缺陷。 该方法包括在引发衬底中的缺陷之后在区域中用激光划线工艺对衬底的表面进行图案化。 该方法还涉及在具有诱导缺陷的区域处分离集成电路。 在另一个实施例中，系统包括第一激光模块，其被配置为将集束电路之间的区域内的激光束聚焦在衬底内，从而在该区域内的衬底内引起缺陷。 第二激光模块被配置为在引发缺陷之后在区域中用激光划线工艺对基板的表面进行图案化。 磁带扩展器被配置为拉伸安装基板的带，分离集成电路。

公开(公告)号：US20150287638A1

公开(公告)日：2015-10-08

申请号：US14248205

申请日：2014-04-08

申请人： Jungrae Park ,  Wei-Sheng Lei ,  James S. Papanu ,  Brad Eaton ,  Ajay Kumar

发明人： Jungrae Park ,  Wei-Sheng Lei ,  James S. Papanu ,  Brad Eaton ,  Ajay Kumar

IPC分类号： H01L21/78 ,  B23K26/36

CPC分类号： H01L21/78 ,  B23K26/364 ,  B23K26/402 ,  H01L21/02057 ,  H01L21/3065 ,  H01L21/30655 ,  H01L21/3081 ,  H01L21/31105 ,  H01L21/31127 ,  H01L21/32131 ,  H01L21/76224

摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask composed of a layer covering and protecting the integrated circuits. The mask is then patterned with a collimated laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then plasma etched through the gaps in the patterned mask to singulate the integrated circuits.

摘要翻译： 对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。 在一个例子中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成掩模，该掩模由覆盖并保护集成电路的层组成。 然后用准直激光划线工艺对掩模进行构图，以提供具有间隙的图案化掩模，暴露集成电路之间的半导体晶片的区域。 然后通过图案化掩模中的间隙对半导体晶片进行等离子体蚀刻，以对集成电路进行分离。

公开(公告)号：US20150221505A1

公开(公告)日：2015-08-06

申请号：US14658102

申请日：2015-03-13

申请人： Jungrae Park ,  Wei-Sheng Lei ,  Prabhat Kumar ,  James S. Papanu ,  Brad Eaton ,  Ajay Kumar

发明人： Jungrae Park ,  Wei-Sheng Lei ,  Prabhat Kumar ,  James S. Papanu ,  Brad Eaton ,  Ajay Kumar

IPC分类号： H01L21/02 ,  H01L21/683 ,  H01L21/308 ,  B05B3/10 ,  B05B1/00

CPC分类号： H01L21/02282 ,  B05B1/00 ,  B05B3/1014 ,  B05B3/1035 ,  H01L21/3081 ,  H01L21/3086 ,  H01L21/6715 ,  H01L21/6835 ,  H01L21/78 ,  H01L2221/68327

摘要： Improved wafer coating processes, apparatuses, and systems are described. In one embodiment, an improved spin-coating process and system is used to form a mask for dicing a semiconductor wafer with a laser plasma dicing process. In one embodiment, a spin-coating apparatus for forming a film over a semiconductor wafer includes a rotatable stage configured to support the semiconductor wafer. The rotatable stage has a downward sloping region positioned beyond a perimeter of the semiconductor wafer. The apparatus includes a nozzle positioned above the rotatable stage and configured to dispense a liquid over the semiconductor wafer. The apparatus also includes a motor configured to rotate the rotatable stage.

摘要翻译： 描述了改进的晶片涂布工艺，装置和系统。 在一个实施例中，改进的旋涂工艺和系统用于形成用激光等离子体切割工艺切割半导体晶片的掩模。 在一个实施例中，用于在半导体晶片上形成膜的旋涂装置包括被配置为支撑半导体晶片的可旋转台。 可旋转台具有位于半导体晶片周边之外的向下倾斜区域。 该设备包括位于可旋转台上方并被配置为在半导体晶片上分配液体的喷嘴。 该装置还包括构造成旋转可旋转台的马达。

公开(公告)号：US09093518B1

公开(公告)日：2015-07-28

申请号：US14320390

申请日：2014-06-30

申请人： Wei-Sheng Lei ,  James S. Papanu ,  Brad Eaton ,  Ajay Kumar

发明人： Wei-Sheng Lei ,  James S. Papanu ,  Brad Eaton ,  Ajay Kumar

IPC分类号： H01L21/00 ,  H01L21/78

CPC分类号： H01L24/73 ,  H01L21/563 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/05 ,  H01L24/06 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/92 ,  H01L24/94 ,  H01L25/0657 ,  H01L25/18 ,  H01L25/50 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/05009 ,  H01L2224/0557 ,  H01L2224/06181 ,  H01L2224/13025 ,  H01L2224/13147 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/27002 ,  H01L2224/27009 ,  H01L2224/2741 ,  H01L2224/27436 ,  H01L2224/27831 ,  H01L2224/2919 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/73104 ,  H01L2224/81191 ,  H01L2224/83191 ,  H01L2224/92 ,  H01L2224/94 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/1431 ,  H01L2924/1434 ,  H01L2224/27 ,  H01L2224/11 ,  H01L2224/73204 ,  H01L2924/00012 ,  H01L2924/0665 ,  H01L2924/06 ,  H01L2924/00014

摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a wafer involves providing a semiconductor wafer having integrated circuits on a front side thereof, and having a wafer-level underfill material layer disposed on the integrated circuits. The method also involves laser irradiating the semiconductor wafer from a backside of the semiconductor wafer to generate defects along dicing streets of the semiconductor wafer, the dicing streets oriented between the integrated circuits. The method also involves, subsequent to the laser irradiating, mechanically singulating the integrated circuits along the dicing streets.

摘要翻译： 对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。 在一个示例中，晶片切割的方法包括在其前侧提供具有集成电路的半导体晶片，并且具有设置在集成电路上的晶片级底部填充材料层。 该方法还包括从半导体晶片的背面激光照射半导体晶片，以在半导体晶片的切割街道之间产生缺陷，该切割街道在集成电路之间取向。 该方法还包括在激光照射之后，沿着切割街道机械地分离集成电路。

公开(公告)号：US09018079B1

公开(公告)日：2015-04-28

申请号：US14167318

申请日：2014-01-29

申请人： Wei-Sheng Lei ,  Brad Eaton ,  Madhava Rao Yalamanchili ,  Ajay Kumar

发明人： Wei-Sheng Lei ,  Brad Eaton ,  Madhava Rao Yalamanchili ,  Ajay Kumar

IPC分类号： H01L21/3065 ,  H01L21/82 ,  H01L21/67

CPC分类号： H01L21/67207 ,  H01L21/02076 ,  H01L21/3065 ,  H01L21/78

摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask is patterned with a laser scribing process to provide a patterned mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. Subsequent to patterning the mask, the exposed regions of the semiconductor wafer are cleaned with a plasma process reactive to the exposed regions of the semiconductor wafer. Subsequent to cleaning the exposed regions of the semiconductor wafer, the semiconductor wafer is plasma etched through the gaps in the patterned mask to singulate the integrated circuits.

摘要翻译： 对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。 在一个示例中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成掩模，该掩模包括覆盖并保护集成电路的层。 通过激光划线工艺对掩模进行构图，以提供具有间隙的图案化掩模，暴露半导体晶片在集成电路之间的区域。 在对掩模进行图案化之后，用与半导体晶片的暴露区域无关的等离子体处理来清洁半导体晶片的暴露区域。 在清洁半导体晶片的暴露区域之后，通过图案化掩模中的间隙对半导体晶片进行等离子体蚀刻，以对集成电路进行分离。

公开(公告)号：US20150104929A1

公开(公告)日：2015-04-16

申请号：US14103529

申请日：2013-12-11

申请人： Wei-Sheng Lei ,  Brad Eaton ,  Ajay Kumar

发明人： Wei-Sheng Lei ,  Brad Eaton ,  Ajay Kumar

IPC分类号： H01L21/78 ,  H01L21/3065 ,  H01L21/67 ,  H01L21/308

CPC分类号： H01L21/78 ,  H01L21/3065 ,  H01L21/3083 ,  H01L21/3085 ,  H01L21/67207

摘要： Methods of and apparatuses for dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. In an example, a method of dicing a semiconductor wafer having a front surface having a plurality of integrated circuits thereon involves forming a mask layer above the front surface of the semiconductor wafer. The method also involves laser scribing the mask layer and the front surface of the semiconductor wafer to provide scribe lines in the mask layer and partially into the semiconductor wafer. The laser scribing involves use of a dual focus lens to provide a dual focus spot beam. The method also involves etching the semiconductor wafer through the scribe lines to singulate the integrated circuits.

摘要翻译： 对具有多个集成电路的各晶片的切割半导体晶片的方法和装置进行说明。 在一个示例中，在其上划分具有多个集成电路的正面的半导体晶片的方法包括在半导体晶片的前表面上形成掩模层。 该方法还包括对掩模层和半导体晶片的前表面进行激光划线以在掩模层中提供划线并部分地进入半导体晶片。 激光划线涉及使用双焦点透镜来提供双焦点光束。 该方法还涉及通过划线蚀刻半导体晶片以对集成电路进行分离。

公开(公告)号：US20150079760A1

公开(公告)日：2015-03-19

申请号：US14103515

申请日：2013-12-11

申请人： Wei-Sheng Lei ,  Ajay Kumar ,  Brad Eaton

发明人： Wei-Sheng Lei ,  Ajay Kumar ,  Brad Eaton

IPC分类号： H01L21/82

CPC分类号： H01L21/82 ,  B23K26/0624 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/172 ,  H01L21/3081 ,  H01L21/31127 ,  H01L21/67207 ,  H01L21/78

摘要： Alternating masking and laser scribing approaches for wafer dicing using laser scribing and plasma etch are described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits includes forming a first mask above the semiconductor wafer. The first mask is patterned with a first laser scribing process to provide a patterned first mask with a first plurality of scribe lines exposing regions of the semiconductor wafer between the integrated circuits. Subsequent to patterning the first mask with the first laser scribing process, a second mask is formed above the patterned first mask. The second mask is patterned with a second laser scribing process to provide a patterned second mask with a second plurality of scribe lines exposing regions of the semiconductor wafer between the integrated circuits. The second plurality of scribe lines is aligned with and overlaps the first plurality of scribe lines. The semiconductor wafer is plasma etched through the second plurality of scribe lines to singulate the integrated circuits.

摘要翻译： 描述了使用激光划线和等离子体蚀刻的晶片切割的交替掩模和激光划线方法。 在一个实例中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片之上形成第一掩模。 利用第一激光划线工艺对第一掩模进行构图，以提供具有暴露集成电路之间的半导体晶片区域的第一多个划线的图案化第一掩模。 在通过第一激光划线工艺对第一掩模进行图案化之后，在图案化的第一掩模上方形成第二掩模。 利用第二激光划线工艺对第二掩模进行构图，以提供具有暴露在集成电路之间的半导体晶片的区域的第二多个划线的图案化第二掩模。 第二组划线与第一组划线相对准并重叠。 通过第二多个划线对半导体晶片进行等离子体蚀刻，以对集成电路进行分割。

公开(公告)号：US08951819B2

公开(公告)日：2015-02-10

申请号：US13180021

申请日：2011-07-11

申请人： Wei-Sheng Lei ,  Brad Eaton ,  Madhava Rao Yalamanchili ,  Saravjeet Singh ,  Ajay Kumar ,  Aparna Iyer

发明人： Wei-Sheng Lei ,  Brad Eaton ,  Madhava Rao Yalamanchili ,  Saravjeet Singh ,  Ajay Kumar ,  Aparna Iyer

IPC分类号： H01L21/00 ,  B23K26/00 ,  H01L21/3065 ,  H01L21/78 ,  H01L21/67

CPC分类号： H01L21/3065 ,  B23K26/00 ,  B23K26/0006 ,  B23K26/0624 ,  B23K26/0661 ,  B23K26/0676 ,  B23K26/083 ,  B23K26/0869 ,  B23K26/361 ,  B23K26/40 ,  B23K26/53 ,  B23K37/047 ,  B23K2103/50 ,  B23K2103/56 ,  H01L21/67207 ,  H01L21/78

摘要： Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer. The mask is composed of a layer covering and protecting the integrated circuits. The mask is patterned with a split-beam laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the semiconductor wafer between the integrated circuits. The semiconductor wafer is then etched through the gaps in the patterned mask to singulate the integrated circuits.

摘要翻译： 对具有多个集成电路的每个晶片进行切割的半导体晶片的方法进行了说明。 一种方法包括在半导体晶片上形成掩模。 掩模由覆盖和保护集成电路的层组成。 掩模用分光束激光划线工艺图案化，以提供具有间隙的图案化掩模。 图案化使得集成电路之间的半导体晶片的区域露出。 然后通过图案化掩模中的间隙蚀刻半导体晶片，以对集成电路进行分离。

公开(公告)号：US08940619B2

公开(公告)日：2015-01-27

申请号：US13917973

申请日：2013-06-14

申请人： Wei-Sheng Lei ,  Brad Eaton ,  Aparna Iyer ,  Saravjeet Singh ,  Todd Egan ,  Ajay Kumar ,  Seshadri Ramaswami

发明人： Wei-Sheng Lei ,  Brad Eaton ,  Aparna Iyer ,  Saravjeet Singh ,  Todd Egan ,  Ajay Kumar ,  Seshadri Ramaswami

IPC分类号： H01L21/78 ,  H01L21/463 ,  H01L21/47 ,  H01L21/475 ,  H01L21/82 ,  H01L21/56 ,  H01L21/683

CPC分类号： H01L23/32 ,  H01L21/463 ,  H01L21/47 ,  H01L21/475 ,  H01L21/561 ,  H01L21/6835 ,  H01L21/6836 ,  H01L21/78 ,  H01L21/82 ,  H01L27/04 ,  H01L2924/0002 ,  H01L2924/00

摘要： Methods of dicing semiconductor wafers, and transporting singulated die, are described. In an example, a method of dicing a wafer having a plurality of integrated circuits thereon involves dicing the wafer into a plurality of singulated dies disposed above a dicing tape. The method also involves forming a water soluble material layer over and between the plurality of singulated dies, above the dicing tape.

摘要翻译： 描述了切割半导体晶片和输送单个模具的方法。 在一个示例中，在其上划分具有多个集成电路的晶片的方法包括将晶片切割成设置在切割带上方的多个单片模具。 该方法还涉及在切割胶带上方的多个分割模具之上和之间形成水溶性材料层。

公开(公告)号：US20140377937A1

公开(公告)日：2014-12-25

申请号：US14478354

申请日：2014-09-05

申请人： Wei-Sheng Lei ,  Brad Eaton ,  Aparna Iyer ,  Todd Egan ,  Madhava Rao Yalamanchili ,  Ajay Kumar

发明人： Wei-Sheng Lei ,  Brad Eaton ,  Aparna Iyer ,  Todd Egan ,  Madhava Rao Yalamanchili ,  Ajay Kumar

IPC分类号： H01L21/82 ,  H01L21/308

CPC分类号： H01L21/82 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/3081 ,  H01L21/31127 ,  H01L21/78

摘要： Methods of using a hybrid mask composed of a first water soluble film layer and a second water-soluble layer for wafer dicing using laser scribing and plasma etch described. In an example, a method of dicing a semiconductor wafer having a plurality of integrated circuits involves forming a hybrid mask above the semiconductor wafer. The hybrid mask is composed of a first water-soluble layer disposed on the integrated circuits, and a second water-soluble layer disposed on the first water-soluble layer. The method also involves patterning the hybrid mask with a laser scribing process to provide a patterned hybrid mask with gaps, exposing regions of the semiconductor wafer between the integrated circuits. The method also involves etching the semiconductor wafer through the gaps in the patterned hybrid mask to singulate the integrated circuits.

摘要翻译： 使用由第一水溶性薄膜层和第二水溶性层组成的晶片切割的激光划线和等离子体蚀刻的方法。 在一个示例中，对具有多个集成电路的半导体晶片进行切割的方法包括在半导体晶片上形成混合掩模。 混合掩模由设置在集成电路上的第一水溶性层和设置在第一水溶性层上的第二水溶性层组成。 该方法还包括用激光划线工艺图案化混合掩模，以提供具有间隙的图案化混合掩模，暴露集成电路之间的半导体晶片的区域。 该方法还包括通过图案化混合掩模中的间隙蚀刻半导体晶片以对集成电路进行分离。