摘要:
An heterojunction field effect transistor comprises a channel forming layer associated with a carrier supplying layer, and an electrostatic lens is provided across the channel forming layer with a focusing gate electrode appropriately biased, wherein an abrupt potential discontinuity is produced in the bottom edge of the conduction band of the channel forming layer with an emitter gate electrode provided between a source electrode and the focusing gate electrode so that hot electrons produced by the abrupt potential discontinuity have substantially uniform longitudinal electron energies allowing the hot electrons to be focused upon a focal point of the electrostatic lens.
摘要:
A resonant tunneling hot carrier transistor according to the present invention is provided with a first multiple-layer structure provided on a substrate and having a first collector layer, a first collector barrier layer, a first base layer and a first quantum well resonator, a common emitter layer, and a second multiple-layer structure provided on the common emitter layer and having a second quantum well resonator, a second base layer, a second collector barrier layer and a second collector layer. The first and second quantum well resonators respectively provide first and second sub-bands different in energy level, so that carrier injections take place from the first and second quantum well resonators into the first and second base layers at different emitter-base voltage levels, respectively.
摘要:
There is described a functional device constructed with a semi-insulating substrate, a channel layer of a conductive compound semiconductor formed on the semi-insulating substrate, a channel electrode coupled to a first area of the channel layer, a gate electrode coupled to a second area of the channel layer, first and second resonant tunneling diodes formed on third and fourth areas of the channel layer intervening the second area, a source electrode formed on the first resonant tunneling diode, and a drain electrode formed on the second resonant tunneling diode. The functional device may be applied to many function circuits such as a bistable multi-vibrator or memory cell, and a frequency multiplier with addition of a few circuit elements or wirings.
摘要:
There is provided an image processing apparatus that includes a move detecting unit that detects a move of a subject contained in a moving image from plural frame images, based on an image signal that indicates the moving image including the frame image and delay time information that indicates a delay time of an image pickup, and a correcting unit that corrects the image signal, based on the image signal and move information that indicates a move of a detected subject.
摘要:
A bit rate by which encoded data is supplied for decoding at the time of decoding is specified based on the encoded data obtained by encoding. Further, an encoding difficulty of processed data is detected. Then, a quantization scale is controlled based on the specified bit rate and the detected encoding difficulty.
摘要:
Motion picture data is compression-encoded by a compression encoder with the frame rate changing according to the amount of accumulated data of the buffer, which can adequately change the number of pieces of frame image data to be compression-encoded per unit time, according to the change in the picture of the motion picture. In addition, tracing is done to trace extract image data in the frame image data by using a simple motion vector detected for the frame image data of the motion picture data, a higher layer motion vector detector detects a motion vector of the frame image data by using the simple motion vector in common, and a compression encoder extracts the extract image data based on the results of tracing and compression-encodes it by using the motion vector.
摘要:
A high-density magnetic recording medium uses a nonmetallic substrate, while still providing high in-plane magnetic anisotropy and remanent coercivity. Such a medium can be formed by depositing a seed layer on a textured surface of the nonmetallic substrate in a gas mixture containing oxygen or nitrogen and an inert gas, while controlling the oxygen concentration or nitrogen concentration, and subsequently exposing the surface of the seed layer to oxygen or nitrogen.
摘要:
A method and apparatus for encoding a picture advantageously employed for encoding a picture. A plurality of input picture data are stored, and the quantity of the information of the input picture data from the plural stored picture data is evaluated for detecting a scene change. A GOP of a preset unit length, made up of a picture formed by compression by intra-frame coding and a picture formed by compression by inter-frame predictive coding, is selected based upon a scene change detection output and the input picture data is encoded in a pre-set manner in accordance with the selected GOP. By detecting a scene change and selecting the intra-frame coding as a compression method responsive to scene change detection, the compression efficiency is raised at a scene change portion of the input picture data where the correlation between previous and succeeding pictures is lowered.
摘要:
Excellent negative resistance characteristics are attained in a resonant bipolar transistor (RBT) while improving current gain. A first conduction type collector layers and the opposite conduction type base layer are sequentially formed on a semiconductor substrate. A quantum well structure in which a quantum level of electrons or holes is generated, and a contact layer of the same conduction type as the base layer are sequentially formed on a part of the base layer. An emitter layer of the same conduction type as the collector layer is formed directly on another part of the base. Since good negative resistance characteristics can be attained by utilizing the resonant tunneling effect of base majority carriers, and the quantum well structure causing carrier accumulation can be eliminated from the path of carriers flowing between the emitter and the collector, it is possible to reduce the recombination current at the emitter-base interface and in the quantum well structure, thereby improving current gain.
摘要:
The invention provides a semiconductor multi-layer structure involved in a Schottky gate field effect transistor. The structure comprises a Schottky barrier structure to form a Schottky contact permitting the third conduction band edge to have such a sufficient large discontinuity as to prevent carriers to pass through the Schottky barrier layer, while the Schottky barrier structure includes a quantum well or super-lattice structure to permit carriers to exhibit a tunneling at a high probability between the quantum well layer and a cap layer doped at a sufficient high impurity concentration for permitting the fourth compound semiconductor to be in a degenerate state.