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    Acceleration detection device
    82.
    发明授权
    Acceleration detection device 失效
    加速度检测装置

    公开(公告)号：US5892154A

    公开(公告)日：1999-04-06

    申请号：US934713

    申请日：1997-09-22

    Applicant: Yasuhiro Negoro

    Inventor： Yasuhiro Negoro

    IPC: G01P15/125 ,  G01P15/18

    CPC classification number: G01P15/18 ,  G01P15/125 ,  G01P2015/0828

    Abstract: An acceleration detection device is provided which is capable of detecting accelerations in two or more directions. The base end of a beam is fixed to a support section on a board. A weight is provided in the front end of the beam which is formed so as to extend horizontally along the board surface with a gap with it and the surface of the board. The position of the center of gravity G of the weight is set at a position spaced perpendicularly apart from the center axis of the beam in order that the inertial moment acts when an acceleration along the length (in the X direction) of the beam is applied. The front end surface of the weight is formed into an upright surface of a movable electrode, and a fixed electrode is formed at a position facing the movable electrode with a gap therebetween. When an acceleration in the X or Y direction is applied, the beam is flexed upwardly or downwardly in proportion to the magnitude of the acceleration, causing the weight to be inclined upwardly or downwardly while being displaced upwardly or downwardly. Thus, the electrostatic capacity between the movable electrode and the fixed electrode increases or decreases. The magnitude of the acceleration can be detected on the basis of the amount of such change of the electrostatic capacity.

    Abstract translation: 提供一种能够检测两个或更多个方向上的加速度的加速度检测装置。 梁的基端固定在板上的支撑部分上。 在梁的前端设置有一个重量，梁的前端形成为沿着板表面与其表面和板的表面间隙水平延伸。 重量的重心G的位置被设定在与梁的中心轴线垂直隔开的位置处，以便当沿着梁的长度（在X方向上）的加速度时惯性力矩作用 。 重物的前端面形成为可动电极的直立面，固定电极形成在与可动电极相对的位置上，间隙为间隙。 当施加X或Y方向的加速度时，梁与加速度的大小成比例地向上或向下弯曲，导致重量向上或向下倾斜，同时向上或向下移动。 因此，可动电极和固定电极之间的静电电容增大或减小。 可以基于静电容量的这种变化量来检测加速度的大小。

    Etchants for use in micromachining of CMOS Microaccelerometers and microelectromechanical devices and method of making the same
    85.
    发明授权
    Etchants for use in micromachining of CMOS Microaccelerometers and microelectromechanical devices and method of making the same 失效
    用于微加速器CMOS微加速器和微机电装置的蚀刻剂及其制造方法

    公开(公告)号：US5726480A

    公开(公告)日：1998-03-10

    申请号：US379751

    申请日：1995-01-27

    Applicant: Kristofer S. J. Pister

    Inventor： Kristofer S. J. Pister

    IPC: G01P15/08 ,  G01P15/12 ,  H01L29/72 ,  H01L29/76

    CPC classification number: G01P15/0802 ,  G01P15/123 ,  G01P2015/0828

    Abstract: What is described in the present specification are accelerometers using tiny proof masses and piezoresistive force detection. Conventional wisdom would indicate that this approach would not yield useful sensors. However, in fact, according to the invention, such devices are suitable in a wide range of applications. The devices may include deformable hinges to allow the fabrication of three dimensional structures. A new system has been developed which etches silicon highly selectively at moderate temperatures and without hydrodynamic forces potentially damaging to small structures and features. The system is based on the use of the gas phase etchant xenon diflouride, which is an unremarkable white solid at standard temperature and pressure.

    Abstract translation: 在本说明书中描述的是使用微小的质量块和压阻力检测的加速度计。 常规的智慧将表明这种方法不会产生有用的传感器。 然而，实际上，根据本发明，这样的设备适用于广泛的应用。 这些装置可以包括可变形铰链以允许制造三维结构。 已经开发了一种新的系统，其在中等温度下高度选择性地蚀刻硅，并且没有潜在地损害小结构和特征的流体力学力。 该系统基于使用气相蚀刻剂氙二氟化物，其在标准温度和压力下是不明显的白色固体。

    Method for manufacturing an acceleration sensor
    86.
    发明授权
    Method for manufacturing an acceleration sensor 失效
    加速度传感器的制造方法

    公开(公告)号：US5700702A

    公开(公告)日：1997-12-23

    申请号：US676282

    申请日：1996-07-17

    Applicant: Helmut Klose ,  Markus Biebl ,  Thomas Scheiter ,  Christofer Hierold

    Inventor： Helmut Klose ,  Markus Biebl ,  Thomas Scheiter ,  Christofer Hierold

    IPC: G01P15/08 ,  G01P15/125 ,  H01L29/84 ,  H01L21/265

    CPC classification number: G01P15/125 ,  G01P15/0802 ,  G01P2015/0828 ,  Y10S148/159

    Abstract: Manufacturing method for an acceleration sensor on silicon, whereby, following the manufacture of the doped regions required for the electronic function elements, a polysilicon layer is deposited. The polysilicon layer is structured such that a portion of this polysilicon layer forms an electrode (for example, the emitter electrode (9) and the collector electrode (10) of a transistor) and a sensor layer (17) provided as sensor element.

    Abstract translation: PCT No.PCT / DE95 / 00022 Sec。 371日期：1996年7月17日 102（e）日期1996年7月17日PCT 1995年1月10日PCT PCT。 第WO95 / 19572号公报 日期1995年7月20日硅上的加速度传感器的制造方法，其中，在制造电子功能元件所需的掺杂区域之后，沉积多晶硅层。 多晶硅层被构造为使得该多晶硅层的一部分形成电极（例如，发射极（9）和晶体管的集电极（10））和设置为传感器元件的传感器层（17）。

    Semiconductor acceleration sensor
    87.
    发明授权
    Semiconductor acceleration sensor 失效
    半导体加速度传感器

    公开(公告)号：US5693884A

    公开(公告)日：1997-12-02

    申请号：US680026

    申请日：1996-07-15

    Applicant: Hajime Kato

    Inventor： Hajime Kato

    IPC: G01P1/00 ,  G01P1/02 ,  G01P15/08 ,  G01P15/12 ,  H01L29/84

    CPC classification number: G01P1/003 ,  G01P1/023 ,  G01P15/0802 ,  G01P15/123 ,  G01P2015/0828

    Abstract: A semiconductor acceleration sensor includes a substrate, a semiconductor sensor chip with a diaphragm and having one end fixed to a pedestal, the pedestal including at least one thick film layer and disposed on the substrate, and a protrusion of at least one thick film layer on the substrate directly opposite a free end of the sensor chip, shorter than the pedestal. The protrusion protects the semiconductor sensor chip from breakage at the diaphragm due to impacts.

    Abstract translation: 一种半导体加速度传感器，包括：基板，具有隔膜的半导体传感器芯片，其一端固定在基座上，所述基座包括至少一个厚膜层，并且设置在所述基板上;以及至少一个厚膜层的突出部， 基板直接与传感器芯片的自由端相对，比基座短。 该凸起保护半导体传感器芯片免受因隔膜而产生的冲击。

    Method of making a capacitance type acceleration sensor
    88.
    发明授权
    Method of making a capacitance type acceleration sensor 失效
    制造电容式加速度传感器的方法

    公开(公告)号：US5676851A

    公开(公告)日：1997-10-14

    申请号：US723875

    申请日：1996-09-23

    Applicant: Masayoshi Suzuki ,  Takao Sasayama ,  Keizi Hanzawa ,  Norio Ichikawa ,  Junichi Horie ,  Yukiko Sugisawa ,  Yuuji Ogasawara

    Inventor： Masayoshi Suzuki ,  Takao Sasayama ,  Keizi Hanzawa ,  Norio Ichikawa ,  Junichi Horie ,  Yukiko Sugisawa ,  Yuuji Ogasawara

    IPC: G01P1/02 ,  G01P15/125 ,  B44C1/22 ,  H01L21/00

    CPC classification number: G01P1/023 ,  G01P15/125 ,  G01P2015/0828

    Abstract: A capacitance acceleration sensor and method of making same are disclosed. A capacitance acceleration sensor includes a movable electrode etched from a silicon plate which is clamped between two solid dielectric plate members of glass, silicon oxides, or oxygen oxides. Static electrodes are secured to surfaces of the dielectric members facing opposite the movable electrode, thereby providing easy manufacturing assessibility for leadout wires from these electrodes. In certain embodiments, the movable electrode is formed integrally with a monocrystalline silicon plate member which also contains an integrated circuit for generating an output acceleration signal in response to movement of the movable electrode when the assembly experiences acceleration forces.

    Abstract translation: 公开了一种电容加速度传感器及其制造方法。 电容加速度传感器包括从硅板蚀刻的可移动电极，其被夹在玻璃，氧化硅或氧化物的两个固体电介质板构件之间。 静电极固定在与可动电极相对的电介质元件的表面上，从而为这些电极提供引出线的易制造评估。 在某些实施例中，可移动电极与单晶硅板构件整体形成，该单晶硅板构件还包含用于当组件经受加速力时响应于可移动电极的移动而产生输出加速度信号的集成电路。

    Semiconductor acceleration sensor and its fabrication method
    89.
    发明授权
    Semiconductor acceleration sensor and its fabrication method 失效
    半导体加速度传感器及其制造方法

    公开(公告)号：US5665914A

    公开(公告)日：1997-09-09

    申请号：US598975

    申请日：1996-02-09

    Applicant: Masahiro Yamamoto

    Inventor： Masahiro Yamamoto

    IPC: G01P15/12 ,  G01P1/00 ,  G01P1/02 ,  G01P15/08 ,  H01L29/84 ,  G01P15/00

    CPC classification number: G01P15/0802 ,  G01P1/006 ,  G01P1/023 ,  G01P2015/0828

    Abstract: The invention provides a high-reliability inexpensive semiconductor acceleration sensor requiring no special material for a pedestal, making is possible to decrease the number of materials and the number of assembly steps. A semiconductor acceleration sensor includes a circuit substrate having a thick-film circuit including at least a circuit conductor and an insulating layer, a pedestal on the circuit substrate, a flexible acceleration detecting beam supported by the pedestal and deflecting in response to acceleration, a sensor device on the acceleration detecting beam converting deflection of the acceleration detecting beam into an electrical signal, and a conductor connecting the sensor device with the thick-film circuit wherein the pedestal is the same material as at least one of the circuit conductor and the insulating layer.

    Abstract translation: 本发明提供了一种不需要用于基座的特殊材料的高可靠性便宜的半导体加速度传感器，可以减少材料的数量和组装步骤的数量。 半导体加速度传感器包括具有至少包括电路导体和绝缘层的厚膜电路的电路基板，电路基板上的基座，由基座支撑的柔性加速度检测梁和响应于加速度而偏转的传感器 加速度检测光束将加速度检测光束的偏转变换为电信号的装置，以及将传感器装置与厚膜电路连接的导体，其中基座与电路导体和绝缘层中的至少一个相同 。

    Acceleration sensor with opposed amplifier and detection sections
    90.
    发明授权
    Acceleration sensor with opposed amplifier and detection sections 失效
    具有相对放大器和检测部分的加速度传感器

    公开(公告)号：US5650567A

    公开(公告)日：1997-07-22

    申请号：US528396

    申请日：1995-09-14

    Applicant: Shinjiro Ueda ,  Akinori Hasegawa ,  Noriyuki Jitosho

    Inventor： Shinjiro Ueda ,  Akinori Hasegawa ,  Noriyuki Jitosho

    IPC: G01P15/08 ,  G01P1/02 ,  G01P15/12

    CPC classification number: G01P1/023 ,  G01P15/122 ,  G01P2015/0828

    Abstract: An acceleration sensor includes a case having a bottom part, a pair of opposed walls substantially perpendicular to the bottom part, and a pair of first projections located on the bottom part. The sensor further includes a detection section attached to the case via the pair of first projections for detecting an acceleration and outputting a signal indicating the acceleration, and a spacer located on the bottom part of the case. In addition, the sensor includes an amplifier circuit board attached to the case in the state of being opposed to the detection section with the spacer interposed therebetween and having an amplifier on a substrate thereof for amplifying the signal output by the detection section. Relay terminals are provided for electrically connecting the detection section and the amplifier circuit board, together with output terminals electrically connected to the amplifier circuit board for supplying the amplified signal to an external circuit. The detection section is surrounded by the case, the spacer and the amplifier circuit board. The case has projections used for attaching the acceleration sensor to the object.

    Abstract translation: 加速度传感器包括具有底部的壳体，基本上垂直于底部的一对相对壁和位于底部上的一对第一突起。 传感器还包括检测部分，该检测部分经由一对第一突起附接到壳体，用于检测加速度并输出指示加速度的信号，以及位于壳体底部的间隔件。 此外，传感器包括在与检测部相对的状态下附接到壳体的放大器电路板，隔离件插入其间，并且在其基板上具有用于放大由检测部输出的信号的放大器。 继电器端子用于将检测部分和放大器电路板电连接以及与放大器电路板电连接的输出端子，以将放大的信号提供给外部电路。 检测部分被壳体，间隔物和放大器电路板包围。 壳体具有用于将加速度传感器附接到物体的投影。

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