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    Method for defect detection and process monitoring based on sem images
    81.
    发明申请
    Method for defect detection and process monitoring based on sem images 有权
    基于半图像的缺陷检测和过程监控方法

    公开(公告)号：US20060251340A1

    公开(公告)日：2006-11-09

    申请号：US10564846

    申请日：2004-07-15

    Applicant: Laurent Karsenti

    Inventor： Laurent Karsenti

    IPC: G06K9/56

    CPC classification number: G06T5/30 ,  G06T7/001 ,  G06T7/11 ,  G06T7/155 ,  G06T2207/10061 ,  G06T2207/20101 ,  G06T2207/30148 ,  H01J37/28 ,  H01J2237/221 ,  H01J2237/24592 ,  H01J2237/281 ,  H01J2237/2814 ,  H01J2237/2817

    Abstract: A morphological operation is applied to an SEM image to obtain a idealized image, and the idealized image is used to detect a defect in a subject of the SEM image. Tile defect is detected by subtraction of the idealized image from the original image Morphological operations are used also to entrance the visibility of defects or to check for irregularities in patterns. Other described methods comprise: growing a flow from seed points in the image, in order to define maps in which particles can be identified; checking for separation of objects in the image by growing flows from seed points located on the objects; segmenting the image into supposed identical objects and applying statistical methods to identify the defective ones.

    Abstract translation: 将形态学操作应用于SEM图像以获得理想化图像，并且使用理想图像来检测SEM图像的对象中的缺陷。 通过从原始图像中减去理想化图像来检测平铺缺陷形态操作也用于引入缺陷的可视性或检查图案中的不规则性。 其他描述的方法包括：从图像中的种子点生长流，以便定义可以识别颗粒的图; 通过从位于物体上的种子点生长流来检查图像中物体的分离; 将图像分解为假定的相同对象，并应用统计方法来识别有缺陷的对象。

    Scanning electron microscope
    84.
    发明申请
    Scanning electron microscope 有权
    扫描电子显微镜

    公开(公告)号：US20040051041A1

    公开(公告)日：2004-03-18

    申请号：US10643892

    申请日：2003-08-20

    Inventor： Hideo Todokoro ,  Makoto Ezumi ,  Yoichi Ose ,  Naomasa Suzuki

    IPC: H01J037/28

    CPC classification number: H01J37/244 ,  G01N23/225 ,  G01R31/307 ,  H01J37/05 ,  H01J37/28 ,  H01J2237/004 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/053 ,  H01J2237/0535 ,  H01J2237/24475 ,  H01J2237/2448 ,  H01J2237/24485 ,  H01J2237/2449 ,  H01J2237/24495 ,  H01J2237/24585 ,  H01J2237/24592 ,  H01J2237/281 ,  H01J2237/2817

    Abstract: A scanning electron microscope with an energy filter which can positively utilize secondary electrons and/or reflected electrons which collide against a mesh electrode and are lost. The scanning electron microscope which has a porous electrode for producing an electric field for energy-filtering electrons produced by applying a primary electron beam to a sample and a 1st electron detector which detects electrons passing through the porous electrode is characterized by further having a porous structure provided near the sample, a deflector which deflects electrons from the axis of the primary electron beam, and a 2nd electron detector which detects the electrons deflected by the deflector.

    Abstract translation: 具有能量过滤器的扫描电子显微镜，其能够正确地利用与网状电极碰撞而损失的二次电子和/或反射电子。 具有用于产生用于对样品施加一次电子束产生的电子能量的电场的多孔电极的扫描电子显微镜和检测通过多孔电极的电子的第一电子检测器的特征在于还具有多孔结构 设置在样品附近，偏转器从一次电子束的轴线偏转电子;以及第二电子检测器，其检测偏转器偏转的电子。

    Scanning electron microscope
    85.
    发明申请
    Scanning electron microscope 审中-公开
    扫描电子显微镜

    公开(公告)号：US20040036021A1

    公开(公告)日：2004-02-26

    申请号：US10648388

    申请日：2003-08-27

    Applicant: Hitachi, Ltd.

    Inventor： Hideo Todokoro ,  Makoto Ezumi ,  Yasutsugu Usami

    IPC: H01J037/28 ,  G01N023/225

    CPC classification number: H01J37/28 ,  H01J37/026 ,  H01J2237/0045 ,  H01J2237/0048 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/281 ,  H01J2237/31701

    Abstract: To make it possible to observe the bottom of a contact hole and internal wires, in observation of the contact hole 102, by scanning it at a predetermined acceleration voltage, the positive charge 106 is formed on the surface of the insulator 101, and the secondary electrons 104 are attracted in the hole by this electric field, and the hole is continuously scanned at an acceleration voltage different from the acceleration voltage, and the sample is observed. When the wires embedded in the insulator are to be observed, by observing the insulator at a predetermined acceleration voltage, an electron beam is allowed to enter the sample, and the sample is continuously scanned at an acceleration voltage different from the acceleration voltage, and hence the existence of wires is reflected as a change in the charge of the surface, and it is observed. In either case, the acceleration voltage before observation is different from the one during observation, and the sample surface is temporarily radiated at an acceleration voltage positively generating a positive or negative charge, and thereafter, the acceleration voltage is returned to a one suited to observation, and the sample is observed.

    Abstract translation: 为了可以观察接触孔和内部电线的底部，在观察接触孔102时，通过以预定的加速电压扫描，正电荷106形成在绝缘体101的表面上，次级 电子104通过该电场被吸引在孔中，并且以与加速电压不同的加速电压连续地扫描孔，并且观察样品。 当要观察嵌入在绝缘体中的电线时，通过以预定的加速电压观察绝缘体，允许电子束进入样品，并且以不同于加速电压的加速电压连续扫描样品，因此 电线的存在被反映为表面电荷的变化，并且被观察。 在任一种情况下，观察前的加速电压与观察期间的加速电压不同，并且以正向或正负电荷的正电荷的加速电压暂时照射样品表面，然后将加速电压恢复为适合于观察的加速电压 ，并观察样品。

    Scanning electron microscope with voltage applied to the sample
    86.
    发明授权
    Scanning electron microscope with voltage applied to the sample 有权
    扫描电子显微镜，电压施加到样品

    公开(公告)号：US06635873B1

    公开(公告)日：2003-10-21

    申请号：US09477060

    申请日：2000-01-03

    Applicant: Hideo Todokoro ,  Makoto Ezumi ,  Yasutsugu Usami

    Inventor： Hideo Todokoro ,  Makoto Ezumi ,  Yasutsugu Usami

    IPC: H01J3700

    CPC classification number: H01J37/28 ,  H01J37/026 ,  H01J2237/0045 ,  H01J2237/0048 ,  H01J2237/04735 ,  H01J2237/04756 ,  H01J2237/281 ,  H01J2237/31701

    Abstract: A scanning electron microscope scans a sample using an accelerated electron beam, detects secondary electrons generated from the sample or reflected electrons or both of them, and forms images. After radiating the sample with the electron beam at a first acceleration voltage so as to charge the surface of the sample, where the electron beam is radiated at a predetermined potential, images are observed by scanning the charged sample surface at a second acceleration voltage different from the first acceleration voltage.

    Abstract translation: 扫描电子显微镜使用加速电子束扫描样品，检测从样品产生的二次电子或反射的电子，或者二者形成图像。 在第一加速电压下用电子束照射样品以对电子束以预定电位辐射的样品的表面进行充电，通过以不同于第一加速电压的第二加速电压扫描带电样品表面来观察图像 第一加速电压。

    Wafer inspection system and wafer inspection process using charged particle beam
    87.
    发明申请
    Wafer inspection system and wafer inspection process using charged particle beam 失效
    晶圆检查系统和使用带电粒子束的晶圆检查过程

    公开(公告)号：US20020134936A1

    公开(公告)日：2002-09-26

    申请号：US10035150

    申请日：2002-01-04

    Inventor： Miyako Matsui ,  Mari Nozoe ,  Atsuko Takafuji

    IPC: H01J037/28

    CPC classification number: H01J37/28 ,  H01J2237/281 ,  H01J2237/2817

    Abstract: The present invention provides a wafer inspection technique capable of detecting a defect in a wafer on which a pattern having a large step such as a contact hole being subjected to a semiconductor manufacturing process is formed and obtaining information such as the position and kind of a defect such as a hole with open contact failure caused in dry etching process at high speed. A wafer on which a pattern having a large step being subjected to a semiconductor manufacturing process is formed is scanned and irradiated with an electron beam having irradiation energy which is in a range from 100 eV to 1,000 eV, and a defect is detected at high speed from an image of secondary electrons generated. Before the secondary electron image is captured, the wafer is irradiated with an electron beam at high speed while being moved to thereby charge the surface of the wafer with a desired charging voltage. The kind of the defect is determined from the captured secondary electron image, and a distribution of defects in the plane of the wafer is displayed.

    Abstract translation: 本发明提供一种晶片检查技术，其能够检测在其上形成具有大台阶的图案的晶片中的缺陷，所述图案具有形成半导体制造工艺的接触孔，诸如缺陷的位置和种类等信息 例如在高速干燥蚀刻工艺中引起的具有开放接触故障的孔。 对其上形成具有大步骤的图案进行半导体制造处理的晶片被扫描并照射具有在100eV至1,000eV范围内的照射能量的电子束，并且以高速检测缺陷 从二次电子的图像生成。 在捕获二次电子图像之前，在移动的同时以高速度用电子束照射晶片，从而以期望的充电电压对晶片的表面充电。 从捕获的二次电子图像确定缺陷的种类，并且显示晶片的平面中的缺陷的分布。

    Focused ion beam metrology
    89.
    发明授权
    Focused ion beam metrology 失效
    聚焦离子束计量

    公开(公告)号：US5798529A

    公开(公告)日：1998-08-25

    申请号：US654423

    申请日：1996-05-28

    Applicant: Alfred Wagner

    Inventor： Alfred Wagner

    IPC: G01B15/00 ,  G01B15/04 ,  G01Q30/04 ,  G01Q70/14 ,  H01J37/28 ,  H01J37/317

    CPC classification number: G01B15/04 ,  G01B15/00 ,  H01J37/28 ,  H01J2237/281 ,  H01J2237/2814 ,  H01J2237/3174

    Abstract: A focused ion beam metrology device and method are disclosed. A focused ion beam is used to measure dimensions of semiconductor features, such as top-down linewidth measurement. Low intensity focused ion beams form top view images of the semiconductor. High intensity focused ion beams etch the semiconductor in the presence of etch-enhancing material. A crater is etched to expose a cross-section the of semiconductor. The cross-section is imaged by directing low intensity focused ion beams toward the cross-section. This may be achieved by tilting the semiconductor. A three dimensional profile of a feature may be formed by successively etching the feature top surface and forming a top view image thereof. Overlaying the successive top view images forms the three dimensional profile.

    Abstract translation: 公开了一种聚焦离子束测量装置和方法。 聚焦离子束用于测量半导体特征的尺寸，如自顶向下线宽测量。 低强度聚焦离子束形成半导体的顶视图。 在存在蚀刻增强材料的情况下，高强度聚焦离子束蚀刻半导体。 蚀刻凹坑以暴露半导体的横截面。 通过将低强度聚焦离子束引导到横截面来成像横截面。 这可以通过倾斜半导体来实现。 特征的三维轮廓可以通过连续地蚀刻特征顶面并形成其顶视图来形成。 覆盖连续顶视图形成三维轮廓。

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