公开(公告)号：US4406733A

公开(公告)日：1983-09-27

申请号：US451956

申请日：1982-12-21

申请人： Shinichi Tachi

发明人： Shinichi Tachi

IPC分类号： H01L21/302 ,  H01L21/3065 ,  H01L21/306

CPC分类号： H01L21/3065 ,  H01L21/02019

摘要： In a dry etching method of etching Si, PF.sub.5 -gas is used as a source gas for plasma etching and reactive ion beam etching. The substrate can be etched at a higher rate as compared with the plasma etching in which CF.sub.4 -gas is used as the source gas.

摘要翻译： 在蚀刻Si的干蚀刻方法中，使用PF 5气体作为等离子体蚀刻和反应离子束蚀刻的源气体。 与其中使用CF 4气体作为源气体的等离子体蚀刻相比，可以以更高的速率蚀刻衬底。

公开(公告)号：US4350562A

公开(公告)日：1982-09-21

申请号：US274883

申请日：1981-06-18

申请人： Bonu Bonu

发明人： Bonu Bonu

IPC分类号： H01L21/306

CPC分类号： H01L21/02019 ,  H01L21/30608

摘要： Etching a semiconductor wafer on one side by suspending the wafer on a rotating gas cushion with the wafer surface not to be etched facing the gas cushion with the other wafer surface exposed for etching. The exposed surface is sprayed with etchant and centrifuged at the same time. Subsequently, the etched surface is sprayed with rinsing agent and then centrifuged dry.

摘要翻译： 通过将晶片悬浮在旋转的气垫上，使晶片表面不被蚀刻面对气垫，另一个晶片表面暴露于蚀刻，一边蚀刻半导体晶片。 暴露的表面用蚀刻剂喷涂并同时离心。 随后，将蚀刻的表面用漂洗剂喷涂，然后离心干燥。

公开(公告)号：US3855024A

公开(公告)日：1974-12-17

申请号：US30374672

申请日：1972-11-06

申请人： WESTERN ELECTRIC CO

发明人： LIM M

IPC分类号： H01L21/306 ,  H01L21/3065 ,  H01L21/461 ,  H01L21/465 ,  H01L7/50 ,  C09K3/00

CPC分类号： H01L21/02046 ,  H01L21/02019 ,  H01L21/30621 ,  H01L21/3065 ,  H01L21/461 ,  H01L21/465

摘要： A method of vapor-phase polishing a surface of a semiconductor material, selected from the group of semiconductor materials comprising (1) group II-VI compounds, (2) group III-V compounds, (3) mixed II-VI compounds, (4) mixed III-V compounds and (5) group IV elements, is disclosed. The method includes contacting the surface of the substrate, maintained at a suitable temperature with a gaseous mixture comprising a carrier gas, e.g., hydrogen, and water for a period of time sufficient to polish the surface.

摘要翻译： 一种从包括（1）II-VI族化合物，（2）III-V族化合物，（3）混合II-VI化合物，（3）混合II-VI化合物的组半导体材料组中选择的半导体材料的表面进行气相抛光的方法， 4）混合的III-V族化合物和（5）IV族元素。 该方法包括使基材的表面与适当温度下保持的气体混合物接触，所述气体混合物包括载体气体例如氢气和水，所述时间足以抛光该表面。

公开(公告)号：US3679501A

公开(公告)日：1972-07-25

申请号：US3679501D

申请日：1970-04-13

申请人： IBM

发明人： CHICOTKA RICHARD J

IPC分类号： H01L21/306 ,  C09G1/00 ,  H01L7/00

CPC分类号： H01L21/02019 ,  H01L21/30612

摘要： A METHOD OF POLISHING GALLIUM PHOSPHIDE USED IN THE MANUFACTURE OF SEMICONDUCTIVE DEVICES. A GALLIUM PHOSPHIDE WAFER IS IMMERSED IN A SOLUTION CONSISTING OF FROM ABOUT 15 TO 20 PARTS BY VOLUME OF CONCENTRATED HYDROFLUORIC ACID AND FROM ABOUT 3 TO ABOUT 0.5 PARTS OF CONCENTRATED NITRIC ACID. TREATMENT BY THE HF-HNO3 SOLUTION OF THIS INVENTION LEAVES THE WAFER SUBSTANTIALLY PIT FREE WITH A MIRROR-LIKE SURFACE.

公开(公告)号：US2871110A

公开(公告)日：1959-01-27

申请号：US60016256

申请日：1956-07-26

申请人： TEXAS INSTRUMENTS INC

发明人： STEAD RICHARD R

IPC分类号： C25F3/12 ,  H01L21/306

CPC分类号： H01L21/02019 ,  C25F3/12 ,  H01L21/30604

公开(公告)号：US12104278B2

公开(公告)日：2024-10-01

申请号：US17611138

申请日：2020-03-19

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Tsubasa Honke ,  Kyoko Okita

IPC分类号： C30B29/06 ,  C30B29/36 ,  C30B29/64 ,  C30B33/00 ,  H01L21/02 ,  H01L29/16 ,  H01L29/36 ,  C09G1/02 ,  C09G1/04 ,  C30B23/00 ,  C30B23/02

CPC分类号： C30B29/36 ,  C30B29/06 ,  C30B33/00 ,  H01L21/02021 ,  H01L21/02024 ,  H01L21/02052 ,  H01L29/1608 ,  H01L29/36 ,  C09G1/02 ,  C09G1/04 ,  C30B23/00 ,  C30B23/02 ,  C30B23/025 ,  C30B29/64 ,  H01L21/02019 ,  H01L21/02378 ,  H01L21/02529 ,  Y10T428/219 ,  Y10T428/24355 ,  Y10T428/24777 ,  Y10T428/24942 ,  Y10T428/31

摘要： A silicon carbide substrate has a first main surface, a second main surface, and a chamfered portion. The second main surface is opposite to the first main surface. The chamfered portion is contiguous to each of the first main surface and the second main surface. The silicon carbide substrate has a maximum diameter of 150 mm or more. A surface manganese concentration in the chamfered portion is 1×1011 atoms/cm2 or less.

公开(公告)号：US20240290607A1

公开(公告)日：2024-08-29

申请号：US18573700

申请日：2022-04-08

申请人： Tokyo Electron Limited

发明人： Takashi UNO ,  Satoshi OKAWA ,  Naoyuki OKAMURA ,  Katsufumi MATSUKI

IPC分类号： H01L21/02 ,  H01L21/67

CPC分类号： H01L21/02019 ,  H01L21/6708

摘要： A substrate processing method of processing a substrate includes etching a first surface of the substrate by supplying an etching liquid containing at least hydrofluoric acid and nitric acid onto the first surface. The etching of the first surface includes determining a scan width as a distance between return points set at both ends of a reciprocating movement, and a scan speed at which an etching liquid supply is reciprocated such that a first time taken for the etching liquid supply that has passed a rotation center to pass the rotation center again after turning around at the end of the reciprocating movement becomes shorter than a second time taken for the etching liquid supplied to the rotation center to be removed to an outer peripheral portion of the substrate by a centrifugal force; and etching the first surface with the determined scan width and the determined scan speed.

公开(公告)号：US20240145229A1

公开(公告)日：2024-05-02

申请号：US18280207

申请日：2021-11-09

申请人： SUMITOMO ELECTRIC INDUSTRIES, LTD.

发明人： Kyoko OKITA ,  Tsubasa HONKE ,  Shunsaku UETA

IPC分类号： H01L21/02 ,  H01L29/34

CPC分类号： H01L21/02019 ,  H01L29/34 ,  H01L29/1608

摘要： A silicon carbide substrate includes a first main surface, a second main surface, and an outer peripheral surface. When a defect, in the first main surface, observed using a mirror electron microscope while irradiating the first main surface with an ultraviolet ray is a first defect and a defect, in the first main surface, observed using molten potassium hydroxide is a second defect, a value obtained by dividing an area density of the first defect by an area density of the second defect is more than 0.9 and less than 1.2. The first defect consists of a first blind scratch, a first basal plane dislocation spaced apart from the first blind scratch, a second basal plane dislocation in contact with the first blind scratch, and a second blind scratch spaced apart from each of the first basal plane dislocation and the second basal plane dislocation.

公开(公告)号：US11908678B2

公开(公告)日：2024-02-20

申请号：US17149399

申请日：2021-01-14

申请人： Applied Materials, Inc.

发明人： Lan Yu ,  Benjamin D. Briggs ,  Tyler Sherwood ,  Raghav Sreenivasan ,  Joseph Salfelder

IPC分类号： H01L21/02 ,  H01L21/4757

CPC分类号： H01L21/02024 ,  H01L21/02019 ,  H01L21/47573

摘要： Processing methods may be performed to form a filled contact hole in a mirror layer of a semiconductor substrate. The method may include forming a contact hole through a mirror layer of the semiconductor substrate by an etch process. The method may include filling the contact hole with a fill material. A portion of the fill material may overlie the mirror layer. The method may also include removing a portion of the fill material external to the contact hole by chemical mechanical polishing landing on the mirror layer.

公开(公告)号：US11860973B2

公开(公告)日：2024-01-02

申请号：US17081459

申请日：2020-10-27

申请人： Applied Materials, Inc.

发明人： Ala Moradian ,  Martin A. Hilkene ,  Zuoming Zhu ,  Errol Antonio C. Sanchez ,  Bindusagar Marath Sankarathodi ,  Patricia M. Liu ,  Surendra Singh Srivastava

IPC分类号： G06K9/62 ,  G06F18/214 ,  H01L21/02 ,  G06N20/00 ,  G06F18/24

CPC分类号： G06F18/214 ,  G06F18/24 ,  G06N20/00 ,  H01L21/0206 ,  H01L21/02019

摘要： Systems, apparatus, and methods are disclosed for foreline diagnostics and control. A foreline coupled to a chamber exhaust is instrumented with one or more sensors, in some embodiments placed between the chamber exhaust and an abatement system. The one or more sensors are positioned to measure pressure in the foreline as an indicator of conductance. The sensors are coupled to a trained machine learning model configured to provide a signal when the foreline needs a cleaning cycle or when preventive maintenance should be performed. In some embodiments, the trained machine learning predicts when cleaning or preventive maintenance will be needed.