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公开(公告)号：US6042758A
公开(公告)日：2000-03-28
申请号：US72957
申请日：1998-05-05
申请人： Jitendra Singh Goela
发明人： Jitendra Singh Goela
CPC分类号： C23C16/01 , C23C16/0272
摘要： Articles having at least one precision replicated surface are formed by chemical vapor deposition on a substrate surface which has been precision shaped and finished as the converse of the desired precision surface of the article. The substrate surface is provided with a thin release coating which adheres to the substrate when the article is removed thereby allowing the substrate to be reused. The method is particularly advantageous for forming the interior surfaces of domes and asymmetrical optical surfaces of zinc sulfide.
摘要翻译： 具有至少一个精密复制表面的制品通过化学气相沉积形成在衬底表面上，该衬底表面被精确地成型并且与制品的所需精密表面相反地完成。 衬底表面设置有薄的剥离涂层，其在去除制品时粘附到衬底，从而允许衬底被再次使用。 该方法特别有利于形成硫化锌的圆顶和不对称光学表面的内表面。
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公开(公告)号：US4966869A
公开(公告)日：1990-10-30
申请号：US519538
申请日：1990-05-04
IPC分类号： C23C16/42 , H01L21/28 , H01L21/285 , H01L21/3205
CPC分类号： C23C16/42 , H01L21/28518 , H01L21/32053 , Y10S148/147
摘要： Tungsten disilicide (WSi.sub.x) films are deposited onto doped or undoped polysilicon by reducing WF.sub.6 with a mixture of dichlorosilane (SiH.sub.2 Cl.sub.2) and disilane (Si.sub.2 H.sub.6). The addition of disilane provides a mechanism for increasing the resistivity (silicon to tungsten ratio) of the film without adversely affecting the uniformity or deposition rate of the film. A high silicon to tungsten ratio prevents degradation of the silicide film and the underlaying polysilicon film during subsequent growth of an oxide (SiO.sub.2) dielectric. The excess silicon in the film also provides desirable etching and annealing characteristics.
摘要翻译： 通过用二氯硅烷（SiH 2 Cl 2）和乙硅烷（Si 2 H 6）的混合物还原WF 6，将二硅化钨（WSix）膜沉积到掺杂或未掺杂的多晶硅上。 添加乙硅烷提供了提高膜的电阻率（硅与钨比）的机理，而不会不利地影响膜的均匀性或沉积速率。 高硅比可以防止在氧化物（SiO 2）电介质的后续生长期间硅化物膜和底层多晶硅膜的劣化。 膜中的多余的硅还提供了理想的蚀刻和退火特性。
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公开(公告)号：US4861563A
公开(公告)日：1989-08-29
申请号：US49489
申请日：1987-05-14
申请人： Brian H. Shekerjian , J. B. Price
发明人： Brian H. Shekerjian , J. B. Price
IPC分类号： H01L21/302 , H01J37/18 , H01L21/205 , H01L21/3065 , H01L21/31 , H01L21/67 , H01L21/677
CPC分类号： H01L21/67748 , H01J37/185 , H01L21/67751 , Y10S414/139 , Y10S422/906 , Y10S422/907
摘要： A compact load lock and processing chamber is disclosed in which a moveable member forms a closure for both a load lock volume and an article processing volume. The moveable member is connected to fixed members by a flexible diaphragm which provides a non-sliding seal.
摘要翻译： 公开了一种紧凑的装载锁和处理室，其中可移动构件形成用于装载锁定体积和物品处理量的封闭件。 可移动构件通过提供非滑动密封的柔性隔膜连接到固定构件。
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公开(公告)号：US2802620A
公开(公告)日：1957-08-13
申请号：US33702653
申请日：1953-02-16
申请人： GEN MOTORS CORP
发明人： DARRAH CARL W
IPC分类号： F04D29/28
CPC分类号： F04D29/281
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公开(公告)号：US20010008622A1
公开(公告)日：2001-07-19
申请号：US09759630
申请日：2001-01-13
申请人： CVD Inc.
发明人： Jitendra S. Goela
IPC分类号： C01G009/08
CPC分类号： C23C16/56 , C04B35/547 , C23C16/01 , C23C16/305 , Y10T428/26 , Y10T428/261
摘要： The machinability of water-clear zinc sulfide articles produced by chemical vapor deposition and high temperature, high isostatic pressure (HIP) treatment is enhanced by extending the time over which the article is cooled following the HIP treatment. The resulting low stress, water-clear zinc sulfide articles can be more accurately finished/machined to precise shapes, such as are required in optical applications, than was previously possible.
摘要翻译： 通过化学气相沉积和高温，高等静压（HIP）处理产生的透水性硫化锌制品的机械加工性通过延长制品在HIP处理后被冷却的时间而得到增强。 所得到的低应力，水清洁的硫化锌制品可以比以前可能更准确地精加工/加工成精确的形状，例如在光学应用中所需要的。
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公开(公告)号：US5374412A
公开(公告)日：1994-12-20
申请号：US959880
申请日：1992-10-13
IPC分类号： C01B31/36 , B28B21/42 , C04B35/565 , C04B35/571 , C23C16/00 , C23C16/01 , C23C16/32 , C23C16/44 , G11B5/73 , G11B5/84
CPC分类号： C23C16/01 , C04B35/571 , C23C16/325 , C23C16/4404
摘要： Silicon carbide is produced by chemical vapor deposition at temperatures from 1340.degree.-1380.degree. C., deposition chamber pressures of 180-200 torr, H.sub.2 /methyltrichlorosilane ratio of 4-10 and deposition rate of 1-2 .mu.m/min. Furthermore, H.sub.2 supplied as a part of the gas stream contains less than about 1 part per million (ppm) O.sub.2 gas, and various means are provided to exclude particulate material from the deposition chamber. The silicon carbide is polishable to
摘要翻译： 碳化硅通过化学气相沉积在1340°-1380℃，沉积室压力为180-200托，H 2 /甲基三氯硅烷比为4-10，沉积速率为1-2微米/分钟的条件下生产。 此外，作为气流的一部分供应的H2含有少于约百万分之一（ppm）O 2气体，并且提供各种装置以从沉积室排除颗粒材料。 碳化硅可以在Talystep机械剖析仪上测得的<5 ANGSTROM RMS，具有至少约300W / mk的导热系数。 碳化硅特别适用于需要高抛光性和导热性的应用，例如硬盘驱动器和头盘组件的读/写头以及需要非常高的抛光的光学装置。
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7.发明申请公开(公告)号：US20010022408A1
公开(公告)日：2001-09-20
申请号：US09870242
申请日：2001-05-30
申请人： CVD, Inc.
IPC分类号： B29C031/00 , C23C016/00
CPC分类号： C04B35/565 , C23C16/01 , C23C16/325 , Y10T428/131
摘要： A process of producing relatively large, dense, free-standing silicon carbide articles by chemical vapor deposition is enabled by the provision of specially designed isolation devices. These devices segregate silicon carbide deposits on the intended portions of substrates, thereby alleviating the need to fracture heavy silicon carbide deposits in order to remove, or otherwise move, the substrate, with the heavy deposit thereon, from the deposition furnace. The isolation devices enable the use of more efficient vertically extended vacuum furnaces. The isolation devices also enable the commercial production of relatively dense, large, thin-walled, silicon carbide shells.
摘要翻译： 通过化学气相沉积制造相对较大，致密，独立的碳化硅制品的工艺可以通过提供专门设计的隔离装置来实现。 这些装置将碳化硅沉积物分离在基板的预期部分上，从而减轻了将重质碳化硅沉积物破裂的需要，以便从沉积炉中去除或以其它方式移动沉积在基底上的沉积物。 隔离装置使得能够使用更有效的垂直延伸的真空炉。 隔离装置还使得商业生产相对致密，大的，薄壁的碳化硅壳体。
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公开(公告)号：US20010008229A1
公开(公告)日：2001-07-19
申请号：US09768979
申请日：2001-01-23
申请人： TimeDomain CVD, Inc.
发明人： Simon I. Selitser
IPC分类号： B23K010/00
CPC分类号： B23K10/003
摘要： An inductive plasma torch operating at atmospheric pressure is used for wafer or glass substrate processing. Said torch employs a linear type of plasma confinement. This linear torch is particularly suitable for photoresist etching and processes in which it has the advantages of high chemical isotropic etch rate and low plasma damage.
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9.发明授权
公开(公告)号：US5383969A
公开(公告)日：1995-01-24
申请号：US42933
申请日：1993-04-05
CPC分类号： C23C16/4481 , C23C16/306
摘要： A process and apparatus for the manufacture of chemical vapor deposition deposited structures which comprises supplying a solid zinc metal continuously to a heated retort at a controlled rate. The retort is a body of refractory material having a top and a bottom and a traverse cross section which decreases from the top to the bottom of the retort. The zinc is melted, vaporized, and conveyed to a chemical vapor deposition zone defined by a number of heated mandrel plates where it is reacted with either hydrogen sulfide or hydrogen selenide to form a chemical vapor deposited structure. The process and apparatus provide for improved control over the evaporation rate of zinc and a reduction in the furnace volume needed to melt and vaporize the zinc.
摘要翻译： 一种用于制造化学气相沉积沉积结构的方法和装置，其包括以固定速率将固体锌金属连续地供入加热蒸馏器。 蒸馏器是具有顶部和底部的耐火材料体，横截面从蒸馏器的顶部到底部减少。 锌被熔化，蒸发并输送到由许多加热的心轴板限定的化学气相沉积区，其中它与硫化氢或硒化氢反应形成化学气相沉积结构。 该方法和装置提供了对锌的蒸发速率的改进的控制以及熔化和蒸发锌所需的炉体积的降低。
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公开(公告)号：US5183689A
公开(公告)日：1993-02-02
申请号：US729980
申请日：1991-07-15
CPC分类号： C23C16/0254 , C23C16/306 , C23C16/4581
摘要： The surface of a zinc selenide substrate is ground to curve in the opposite direction from that which occurs due to the bimetallic effect when zinc sulfide is deposited on a flat substrate by the chemical vapor deposition process. The bowing of the interface that occurs upon cooling of the hot laminate when the surface of the substrate is flat before deposition is compensated for by the pre-figured bowing. A distortion free window for the transmission of infra-red radiation is provided by this invention.
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