公开(公告)号：US08251011B2

公开(公告)日：2012-08-28

申请号：US11756097

申请日：2007-05-31

申请人： Yohei Yamazawa ,  Manabu Iwata ,  Chishio Koshimizu ,  Fumihiko Higuchi ,  Akitaka Shimizu ,  Asao Yamashita ,  Nobuhiro Iwama ,  Tsutomu Higashiura ,  DongSheng Zhang ,  Michiko Nakaya ,  Norikazu Murakami

发明人： Yohei Yamazawa ,  Manabu Iwata ,  Chishio Koshimizu ,  Fumihiko Higuchi ,  Akitaka Shimizu ,  Asao Yamashita ,  Nobuhiro Iwama ,  Tsutomu Higashiura ,  DongSheng Zhang ,  Michiko Nakaya ,  Norikazu Murakami

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32174 ,  H01J37/321

摘要： An apparatus, which performs a plasma process on a target substrate by using plasma, includes first and second electrodes in a process chamber to oppose each other. An RF field, which turns a process gas into plasma by excitation, is formed between the first and second electrodes. An RF power supply, which supplies RF power, is connected to the first or second electrode through a matching circuit. The matching circuit automatically performs input impedance matching relative to the RF power. A variable impedance setting section is connected to a predetermined member, which is electrically coupled with the plasma, through an interconnection. The impedance setting section sets a backward-direction impedance against an RF component input to the predetermined member from the plasma. A controller supplies a control signal concerning a preset value of the backward-direction impedance to the impedance setting section.

摘要翻译： 通过使用等离子体在目标基板上进行等离子体处理的装置包括处理室中彼此相对的第一和第二电极。 在第一和第二电极之间形成通过激发将工艺气体转化成等离子体的RF场。 提供RF功率的RF电源通过匹配电路连接到第一或第二电极。 匹配电路自动执行相对于RF功率的输入阻抗匹配。 可变阻抗设定部分通过互连连接到与等离子体电耦合的预定部件。 阻抗设定部分针对从等离子体输入到预定部件的RF分量设置反向阻抗。 控制器将关于反向阻抗的预设值的控制信号提供给阻抗设定部。

公开(公告)号：US20090233450A1

公开(公告)日：2009-09-17

申请号：US12320903

申请日：2009-02-06

申请人： Yosuke Sakao ,  Kensuke Kamiuttanai ,  Akitaka Shimizu

发明人： Yosuke Sakao ,  Kensuke Kamiuttanai ,  Akitaka Shimizu

IPC分类号： H01L21/3065 ,  C23F1/08

CPC分类号： H01L21/3065

摘要： The present invention is a plasma etching method comprising: a cleaning step (a) in which a cleaning gas is supplied into a processing vessel and the cleaning gas is made plasma, so that a deposit adhering to an inside of the processing vessel is removed by means of the plasma; a film depositing step (b), succeeding the cleaning step (a), in which a film depositing gas containing carbon and fluorine is supplied into the processing vessel and the film depositing gas is made plasma, so that a film containing carbon and fluorine is deposited on the inside of the processing vessel by means of the plasma; an etching step (c), succeeding the film depositing step (b), in which a substrate is placed on a stage inside the processing vessel, and an etching gas is supplied into the processing vessel and the etching gas is made plasma, so that the substrate is etched by means of the plasma; and an unloading step (d), succeeding the etching step (c), in which the substrate is unloaded from the processing vessel; wherein, after the unloading step (d) has been finished, the cleaning step (a) to the unloading step (d) are repeated again.

摘要翻译： 本发明是一种等离子体蚀刻方法，其特征在于，包括：清洗工序（a），其中清洗气体被供给到处理容器中，清洗气体被制成等离子体，使得附着在处理容器内部的沉积物被 等离子体的手段; 在清洗步骤（a）之后的成膜步骤（b）中，其中将含有碳和氟的气体的膜沉积到处理容器中并将成膜气体制成等离子体，使得含有碳和氟的膜为 通过等离子体沉积在处理容器的内部; 在薄膜沉积步骤（b）之后的蚀刻步骤（c）中，其中将基板放置在处理容器内的台上，并且将蚀刻气体供应到处理容器中，并使蚀刻气体被制成等离子体，使得 通过等离子体蚀刻衬底; 以及在蚀刻步骤（c）之后的卸载步骤（d），其中所述基板从所述处理容器卸载; 其中，在所述卸载步骤（d）已经完成之后，再次重新执行到所述卸载步骤（d）的清洁步骤（a）。

公开(公告)号：US20070224828A1

公开(公告)日：2007-09-27

申请号：US11691011

申请日：2007-03-26

申请人： Masato KUSHIBIKI ,  Chie Kato ,  Akitaka Shimizu

发明人： Masato KUSHIBIKI ,  Chie Kato ,  Akitaka Shimizu

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/306

CPC分类号： H01L21/32137

摘要： A plasma etching apparatus is arranged to perform main etching for etching a poly-crystalline silicon film by use of Cl2/SF6/N2 plasma obtained by exciting Cl2 gas, SF6 gas, and N2 gas, and over etching for etching the poly-crystalline silicon film by use of Cl2/HBr/CF4 plasma obtained by exciting Cl2 gas, HBr gas, and CF4 gas. In the main etching, N2 gas is added to suppress formation of roughness on a poly-crystalline silicon surface and attain a sufficient etching rate.

摘要翻译： 等离子体蚀刻装置被布置成通过使用Cl 2/2 / SF 6 / N 2 N来进行用于蚀刻多晶硅膜的主蚀刻 通过激发Cl 2 O 2气体，SF 6气体和N 2气体获得的等离子体，以及用于蚀刻多晶硅膜的过蚀刻 使用通过激发Cl 2气体，HBr气体和CF 4

公开(公告)号：US20050070111A1

公开(公告)日：2005-03-31

申请号：US10943983

申请日：2004-09-20

申请人： Masato Kushibiki ,  Masayuki Sawataishi ,  Akitaka Shimizu

发明人： Masato Kushibiki ,  Masayuki Sawataishi ,  Akitaka Shimizu

IPC分类号： H01L21/3065 ,  G03F7/20 ,  H01L21/00 ,  H01L21/02 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213

CPC分类号： H01L21/31138 ,  H01L21/0337 ,  H01L21/32139

摘要： An etching method of the present invention includes a first and a second process. In the first process, pattern widths of a pre-patterned mask layer are increased by depositing plasma reaction products on sidewalls of the mask layer. In the second process, a layer to be etched is etched by using the mask layer as a mask having increased the pattern widths. Therefore, mask layers having different pattern densities exist in the same wafer and pattern widths of mask layers patterned through a photolithography process are uneven according to pattern densities, each pattern width of the mask layers can be made uniform. Accordingly, the pattern widths of the layer can be made uniform over an entire wafer.

摘要翻译： 本发明的蚀刻方法包括第一和第二工艺。 在第一过程中，通过在掩模层的侧壁上沉积等离子体反应产物来增加预图案化掩模层的图案宽度。 在第二过程中，通过使用掩模层作为具有增加图案宽度的掩模来蚀刻待蚀刻的层。 因此，具有不同图案密度的掩模层存在于相同的晶片中，并且通过光刻工艺图案化的掩模层的图案宽度根据图案密度不均匀，可以使掩模层的每个图案宽度均匀。 因此，可以在整个晶片上使层的图案宽度均匀。

公开(公告)号：US20050045588A1

公开(公告)日：2005-03-03

申请号：US10475268

申请日：2002-02-27

申请人： Akiteru Koh ,  Toshihiro Miura ,  Takayuki Fukasawa ,  Akitaka Shimizu ,  Masato Kushibiki ,  Asao Yamashita ,  Fumihiko Higuchi

发明人： Akiteru Koh ,  Toshihiro Miura ,  Takayuki Fukasawa ,  Akitaka Shimizu ,  Masato Kushibiki ,  Asao Yamashita ,  Fumihiko Higuchi

IPC分类号： H01L21/28 ,  H01L21/3213 ,  C23F1/00

CPC分类号： H01J37/32082 ,  H01L21/28061 ,  H01L21/28123 ,  H01L21/32137

摘要： A tungsten silicide layer (104) is etched by plasma etching using Cl2+O2 gas as etching gas. When etching of the tungsten silicide layer (104) is ended substantially, etching gas is switched to Cl2+O2+NF3 and over etching is performed by plasma etching. Etching process is ended under a state where a polysilicon layer (103) formed beneath the tungsten silicide layer (104) is slightly etched uniformly. Residual quantity of the polysilicon layer (103) can be made uniform as compared with prior art and a high quality semiconductor device can be fabricated stably.

摘要翻译： 通过使用Cl 2 + O 2气体作为蚀刻气体的等离子体蚀刻来蚀刻硅化钨层（104）。 当硅化钨层（104）的蚀刻基本上结束时，蚀刻气体切换到Cl2 + O2 + NF3，并且通过等离子体蚀刻进行过蚀刻。 在钨硅化物层（104）下面形成的多晶硅层（103）被均匀地微蚀刻的状态下，结束蚀刻处理。 与现有技术相比，多晶硅层（103）的剩余量可以均匀，并且可以稳定地制造高质量的半导体器件。

公开(公告)号：US08298957B2

公开(公告)日：2012-10-30

申请号：US12320903

申请日：2009-02-06

申请人： Yosuke Sakao ,  Kensuke Kamiutanai ,  Akitaka Shimizu

发明人： Yosuke Sakao ,  Kensuke Kamiutanai ,  Akitaka Shimizu

IPC分类号： H01L21/302

CPC分类号： H01L21/3065

摘要： The present invention is a plasma etching method comprising: a cleaning step (a) in which a cleaning gas is supplied into a processing vessel and the cleaning gas is made plasma, so that a deposit adhering to an inside of the processing vessel is removed by means of the plasma; a film depositing step (b), succeeding the cleaning step (a), in which a film depositing gas containing carbon and fluorine is supplied into the processing vessel and the film depositing gas is made plasma, so that a film containing carbon and fluorine is deposited on the inside of the processing vessel by means of the plasma; an etching step (c), succeeding the film depositing step (b), in which a substrate is placed on a stage inside the processing vessel, and an etching gas is supplied into the processing vessel and the etching gas is made plasma, so that the substrate is etched by means of the plasma; and an unloading step (d), succeeding the etching step (c), in which the substrate is unloaded from the processing vessel; wherein, after the unloading step (d) has been finished, the cleaning step (a) to the unloading step (d) are repeated again.

摘要翻译： 本发明是一种等离子体蚀刻方法，其特征在于，包括：清洗工序（a），其中清洗气体被供给到处理容器中，清洗气体被制成等离子体，使得附着在处理容器内部的沉积物被 等离子体的手段; 在清洗步骤（a）之后的成膜步骤（b）中，其中将含有碳和氟的气体的膜沉积到处理容器中并将成膜气体制成等离子体，使得含有碳和氟的膜为 通过等离子体沉积在处理容器的内部; 在薄膜沉积步骤（b）之后的蚀刻步骤（c）中，其中将基板放置在处理容器内的台上，并且将蚀刻气体供应到处理容器中，并使蚀刻气体被制成等离子体，使得 通过等离子体蚀刻衬底; 以及在蚀刻步骤（c）之后的卸载步骤（d），其中所述基板从所述处理容器卸载; 其中，在所述卸载步骤（d）已经完成之后，再次重新执行到所述卸载步骤（d）的清洁步骤（a）。

公开(公告)号：US20110220609A1

公开(公告)日：2011-09-15

申请号：US13044741

申请日：2011-03-10

申请人： Hidetami Yaegashi ,  Masanobu Honda ,  Akitaka Shimizu

发明人： Hidetami Yaegashi ,  Masanobu Honda ,  Akitaka Shimizu

IPC分类号： C23F1/08 ,  C23F1/00

CPC分类号： H01L21/3065 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32568 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6831

摘要： There are provided a plasma etching method and a plasma etching apparatus capable of independently controlling distributions of line widths and heights of lines in a surface of a wafer. The plasma etching method for performing a plasma etching on a substrate W by irradiating plasma containing charged particles and neutral particles to the substrate W includes controlling a distribution of reaction amounts between the substrate W and the neutral particles in a surface of the substrate W by adjusting a temperature distribution in the surface of the substrate W supported by a support 105, and controlling a distribution of irradiation amounts of the charged particles in the surface of the substrate W by adjusting a gap between the substrate W supported by the support 105 and an electrode 120 provided so as to face the support 105.

摘要翻译： 提供了能够独立地控制晶片表面的线宽和线的分布的等离子体蚀刻方法和等离子体蚀刻装置。 用于通过将含有带电粒子和中性粒子的等离子体等离子体等离子体蚀刻到基板W上的等离子体蚀刻方法包括通过调整基板W的表面中的基板W与中性粒子之间的反应量的分布， 由支撑体105支撑的基板W的表面的温度分布，通过调整由支撑体105支撑的基板W与电极之间的间隙来控制基板W的表面的带电粒子的照射量的分布 120设置成面对支撑件105。

公开(公告)号：US20110217796A1

公开(公告)日：2011-09-08

申请号：US13107606

申请日：2011-05-13

申请人： Susumu Saito ,  Akitaka Shimizu

发明人： Susumu Saito ,  Akitaka Shimizu

IPC分类号： H01L21/66

CPC分类号： H01L21/3065 ,  H01L21/308 ,  H01L22/26

摘要： An etching method capable of controlling the film thickness of a hard mask layer uniformly is provided. A plasma etching is performed on a native oxide film by using an etching gas containing, for example, CF4 and Ar while a thickness of a silicon nitride film is being monitored and the etching is finished when the thickness of the silicon nitride film reaches a predetermined value. Then, a plasma etching is performed on a silicon substrate by employing an etching gas containing, for example, Cl2, HBr and Ar and using the silicon nitride film as a mask while a depth of a trench is being monitored and the etching is finished when the depth of the trench reaches a specified value.

摘要翻译： 提供了能够均匀地控制硬掩模层的膜厚的蚀刻方法。 通过使用含有例如CF4和Ar的蚀刻气体来进行等离子体蚀刻，同时在氮化硅膜的厚度被监视的同时蚀刻完成，当氮化硅膜的厚度达到预定值时 值。 然后，通过使用包含例如Cl 2，HBr和Ar的蚀刻气体，并且在监测沟槽的深度并且蚀刻完成时，使用氮化硅膜作为掩模，在硅衬底上进行等离子体蚀刻， 沟槽的深度达到规定值。

公开(公告)号：US07897498B2

公开(公告)日：2011-03-01

申请号：US11794325

申请日：2005-11-29

申请人： Glenn Gale ,  Yoshihiro Hirota ,  Yusuke Muraki ,  Genji Nakamura ,  Masato Kushibiki ,  Naoki Shindo ,  Akitaka Shimizu ,  Shigeo Ashigaki ,  Yoshihiro Kato

发明人： Glenn Gale ,  Yoshihiro Hirota ,  Yusuke Muraki ,  Genji Nakamura ,  Masato Kushibiki ,  Naoki Shindo ,  Akitaka Shimizu ,  Shigeo Ashigaki ,  Yoshihiro Kato

IPC分类号： H01L21/336 ,  H01L21/8324 ,  H01L21/76 ,  H01L21/3205 ,  H01L21/4763

CPC分类号： H01L21/28123 ,  H01L21/31111 ,  H01L21/31144 ,  H01L21/32139 ,  Y10S438/931

摘要： The present invention is a method of manufacturing a semiconductor device from a layered body including: a semiconductor substrate; a high dielectric film formed on the semiconductor substrate; and an SiC-based film formed on a position upper than the high dielectric film, the SiC-based film having an anti-reflective function and a hardmask function. The present invention comprises a plasma-processing step for plasma-processing the SiC-based film and the high dielectric film to modify the SiC-based film and the high dielectric film by an action of a plasma; and a cleaning step for wet-cleaning the SiC-based film and the high dielectric film modified in the plasma-processing step to collectively remove the SiC-based film and the high dielectric film.

摘要翻译： 本发明是一种从层叠体制造半导体器件的方法，包括：半导体衬底; 形成在所述半导体基板上的高电介质膜; 以及形成在高于高介电膜的位置的SiC基膜，所述SiC基膜具有抗反射功能和硬掩模功能。 本发明包括等离子体处理步骤，用于等离子体处理SiC基膜和高介电膜，以通过等离子体的作用改性SiC基膜和高介电膜; 以及用于湿式清洁在等离子体处理步骤中改性的SiC基膜和高介电膜的清洁步骤，以共同地去除SiC基膜和高介电膜。

公开(公告)号：US07871532B2

公开(公告)日：2011-01-18

申请号：US11354836

申请日：2006-02-16

申请人： Akitaka Shimizu ,  Kosuke Ogasawara ,  Susumu Saito

发明人： Akitaka Shimizu ,  Kosuke Ogasawara ,  Susumu Saito

IPC分类号： B23K9/02

CPC分类号： H01L21/02057 ,  H01J37/32477 ,  H01L21/02071 ,  H01L21/28123 ,  H01L21/67069 ,  H01L21/67207

摘要： A plasma processing method for performing a plasma process on a target object placed in a chamber includes a first plasma process of turning a gas containing at least a halogen element into plasma to generate first plasma, thereby processing the target object; a second plasma process, subsequent to the first plasma process, of supplying a gas containing oxygen into the chamber to generate second plasma, thereby processing the chamber and the target object; and a third plasma process, subsequent to the second plasma process, of turning a gas containing at least fluorine into plasma to generate third plasma, thereby processing the target object.

摘要翻译： 用于对放置在腔室中的目标物体进行等离子体处理的等离子体处理方法包括：将至少含有卤素元素的气体转换成等离子体以产生第一等离子体的第一等离子体处理，从而处理目标物体; 在第一等离子体处理之后的第二等离子体工艺，将含氧气体供应到室中以产生第二等离子体，由此处理室和目标物体; 以及在第二等离子体处理之后的第三等离子体处理将至少含有氟的气体转化为等离子体以产生第三等离子体，由此处理目标物体。