公开(公告)号：US20110220609A1

公开(公告)日：2011-09-15

申请号：US13044741

申请日：2011-03-10

申请人： Hidetami Yaegashi ,  Masanobu Honda ,  Akitaka Shimizu

发明人： Hidetami Yaegashi ,  Masanobu Honda ,  Akitaka Shimizu

IPC分类号： C23F1/08 ,  C23F1/00

CPC分类号： H01L21/3065 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/32568 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/32137 ,  H01L21/32139 ,  H01L21/67103 ,  H01L21/67109 ,  H01L21/6831

摘要： There are provided a plasma etching method and a plasma etching apparatus capable of independently controlling distributions of line widths and heights of lines in a surface of a wafer. The plasma etching method for performing a plasma etching on a substrate W by irradiating plasma containing charged particles and neutral particles to the substrate W includes controlling a distribution of reaction amounts between the substrate W and the neutral particles in a surface of the substrate W by adjusting a temperature distribution in the surface of the substrate W supported by a support 105, and controlling a distribution of irradiation amounts of the charged particles in the surface of the substrate W by adjusting a gap between the substrate W supported by the support 105 and an electrode 120 provided so as to face the support 105.

摘要翻译： 提供了能够独立地控制晶片表面的线宽和线的分布的等离子体蚀刻方法和等离子体蚀刻装置。 用于通过将含有带电粒子和中性粒子的等离子体等离子体等离子体蚀刻到基板W上的等离子体蚀刻方法包括通过调整基板W的表面中的基板W与中性粒子之间的反应量的分布， 由支撑体105支撑的基板W的表面的温度分布，通过调整由支撑体105支撑的基板W与电极之间的间隙来控制基板W的表面的带电粒子的照射量的分布 120设置成面对支撑件105。

公开(公告)号：US20090206053A1

公开(公告)日：2009-08-20

申请号：US12388192

申请日：2009-02-18

申请人： Akitaka Shimizu ,  Masanobu Honda

发明人： Akitaka Shimizu ,  Masanobu Honda

IPC分类号： B44C1/22 ,  C23F1/08

CPC分类号： H01J37/3266 ,  H01J37/32091 ,  H01J2237/334

摘要： A plasma etching method etching an organic underlayer film formed on a target substrate by using a plasma of a processing gas via a pattered mask layer formed on the underlayer film. The processing gas includes a gaseous mixture of an oxygen-containing gas and a sulfur-containing gas not having oxygen. The oxygen-containing gas is one of O2 gas, CO gas, CO2 gas or a combination thereof and the mask layer is formed of a silicon-containing inorganic compound.

摘要翻译： 一种等离子体蚀刻方法，通过经由形成在下层膜上的图案掩模层，利用处理气体的等离子体来蚀刻形成在目标基板上的有机下层膜。 处理气体包括含氧气体和不具有氧气的含硫气体的气体混合物。 含氧气体是O 2气体，CO气体，CO 2气体或其组合中的一种，掩模层由含硅无机化合物形成。

公开(公告)号：US08251011B2

公开(公告)日：2012-08-28

申请号：US11756097

申请日：2007-05-31

申请人： Yohei Yamazawa ,  Manabu Iwata ,  Chishio Koshimizu ,  Fumihiko Higuchi ,  Akitaka Shimizu ,  Asao Yamashita ,  Nobuhiro Iwama ,  Tsutomu Higashiura ,  DongSheng Zhang ,  Michiko Nakaya ,  Norikazu Murakami

发明人： Yohei Yamazawa ,  Manabu Iwata ,  Chishio Koshimizu ,  Fumihiko Higuchi ,  Akitaka Shimizu ,  Asao Yamashita ,  Nobuhiro Iwama ,  Tsutomu Higashiura ,  DongSheng Zhang ,  Michiko Nakaya ,  Norikazu Murakami

IPC分类号： C23C16/00 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01J37/32174 ,  H01J37/321

摘要： An apparatus, which performs a plasma process on a target substrate by using plasma, includes first and second electrodes in a process chamber to oppose each other. An RF field, which turns a process gas into plasma by excitation, is formed between the first and second electrodes. An RF power supply, which supplies RF power, is connected to the first or second electrode through a matching circuit. The matching circuit automatically performs input impedance matching relative to the RF power. A variable impedance setting section is connected to a predetermined member, which is electrically coupled with the plasma, through an interconnection. The impedance setting section sets a backward-direction impedance against an RF component input to the predetermined member from the plasma. A controller supplies a control signal concerning a preset value of the backward-direction impedance to the impedance setting section.

摘要翻译： 通过使用等离子体在目标基板上进行等离子体处理的装置包括处理室中彼此相对的第一和第二电极。 在第一和第二电极之间形成通过激发将工艺气体转化成等离子体的RF场。 提供RF功率的RF电源通过匹配电路连接到第一或第二电极。 匹配电路自动执行相对于RF功率的输入阻抗匹配。 可变阻抗设定部分通过互连连接到与等离子体电耦合的预定部件。 阻抗设定部分针对从等离子体输入到预定部件的RF分量设置反向阻抗。 控制器将关于反向阻抗的预设值的控制信号提供给阻抗设定部。

公开(公告)号：US20090233450A1

公开(公告)日：2009-09-17

申请号：US12320903

申请日：2009-02-06

申请人： Yosuke Sakao ,  Kensuke Kamiuttanai ,  Akitaka Shimizu

发明人： Yosuke Sakao ,  Kensuke Kamiuttanai ,  Akitaka Shimizu

IPC分类号： H01L21/3065 ,  C23F1/08

CPC分类号： H01L21/3065

摘要： The present invention is a plasma etching method comprising: a cleaning step (a) in which a cleaning gas is supplied into a processing vessel and the cleaning gas is made plasma, so that a deposit adhering to an inside of the processing vessel is removed by means of the plasma; a film depositing step (b), succeeding the cleaning step (a), in which a film depositing gas containing carbon and fluorine is supplied into the processing vessel and the film depositing gas is made plasma, so that a film containing carbon and fluorine is deposited on the inside of the processing vessel by means of the plasma; an etching step (c), succeeding the film depositing step (b), in which a substrate is placed on a stage inside the processing vessel, and an etching gas is supplied into the processing vessel and the etching gas is made plasma, so that the substrate is etched by means of the plasma; and an unloading step (d), succeeding the etching step (c), in which the substrate is unloaded from the processing vessel; wherein, after the unloading step (d) has been finished, the cleaning step (a) to the unloading step (d) are repeated again.

摘要翻译： 本发明是一种等离子体蚀刻方法，其特征在于，包括：清洗工序（a），其中清洗气体被供给到处理容器中，清洗气体被制成等离子体，使得附着在处理容器内部的沉积物被 等离子体的手段; 在清洗步骤（a）之后的成膜步骤（b）中，其中将含有碳和氟的气体的膜沉积到处理容器中并将成膜气体制成等离子体，使得含有碳和氟的膜为 通过等离子体沉积在处理容器的内部; 在薄膜沉积步骤（b）之后的蚀刻步骤（c）中，其中将基板放置在处理容器内的台上，并且将蚀刻气体供应到处理容器中，并使蚀刻气体被制成等离子体，使得 通过等离子体蚀刻衬底; 以及在蚀刻步骤（c）之后的卸载步骤（d），其中所述基板从所述处理容器卸载; 其中，在所述卸载步骤（d）已经完成之后，再次重新执行到所述卸载步骤（d）的清洁步骤（a）。

公开(公告)号：US20070224828A1

公开(公告)日：2007-09-27

申请号：US11691011

申请日：2007-03-26

申请人： Masato KUSHIBIKI ,  Chie Kato ,  Akitaka Shimizu

发明人： Masato KUSHIBIKI ,  Chie Kato ,  Akitaka Shimizu

IPC分类号： H01L21/302 ,  H01L21/461 ,  H01L21/306

CPC分类号： H01L21/32137

摘要： A plasma etching apparatus is arranged to perform main etching for etching a poly-crystalline silicon film by use of Cl2/SF6/N2 plasma obtained by exciting Cl2 gas, SF6 gas, and N2 gas, and over etching for etching the poly-crystalline silicon film by use of Cl2/HBr/CF4 plasma obtained by exciting Cl2 gas, HBr gas, and CF4 gas. In the main etching, N2 gas is added to suppress formation of roughness on a poly-crystalline silicon surface and attain a sufficient etching rate.

摘要翻译： 等离子体蚀刻装置被布置成通过使用Cl 2/2 / SF 6 / N 2 N来进行用于蚀刻多晶硅膜的主蚀刻 通过激发Cl 2 O 2气体，SF 6气体和N 2气体获得的等离子体，以及用于蚀刻多晶硅膜的过蚀刻 使用通过激发Cl 2气体，HBr气体和CF 4

公开(公告)号：US20050070111A1

公开(公告)日：2005-03-31

申请号：US10943983

申请日：2004-09-20

申请人： Masato Kushibiki ,  Masayuki Sawataishi ,  Akitaka Shimizu

发明人： Masato Kushibiki ,  Masayuki Sawataishi ,  Akitaka Shimizu

IPC分类号： H01L21/3065 ,  G03F7/20 ,  H01L21/00 ,  H01L21/02 ,  H01L21/027 ,  H01L21/033 ,  H01L21/311 ,  H01L21/3213

CPC分类号： H01L21/31138 ,  H01L21/0337 ,  H01L21/32139

摘要： An etching method of the present invention includes a first and a second process. In the first process, pattern widths of a pre-patterned mask layer are increased by depositing plasma reaction products on sidewalls of the mask layer. In the second process, a layer to be etched is etched by using the mask layer as a mask having increased the pattern widths. Therefore, mask layers having different pattern densities exist in the same wafer and pattern widths of mask layers patterned through a photolithography process are uneven according to pattern densities, each pattern width of the mask layers can be made uniform. Accordingly, the pattern widths of the layer can be made uniform over an entire wafer.

摘要翻译： 本发明的蚀刻方法包括第一和第二工艺。 在第一过程中，通过在掩模层的侧壁上沉积等离子体反应产物来增加预图案化掩模层的图案宽度。 在第二过程中，通过使用掩模层作为具有增加图案宽度的掩模来蚀刻待蚀刻的层。 因此，具有不同图案密度的掩模层存在于相同的晶片中，并且通过光刻工艺图案化的掩模层的图案宽度根据图案密度不均匀，可以使掩模层的每个图案宽度均匀。 因此，可以在整个晶片上使层的图案宽度均匀。

公开(公告)号：US20050045588A1

公开(公告)日：2005-03-03

申请号：US10475268

申请日：2002-02-27

申请人： Akiteru Koh ,  Toshihiro Miura ,  Takayuki Fukasawa ,  Akitaka Shimizu ,  Masato Kushibiki ,  Asao Yamashita ,  Fumihiko Higuchi

发明人： Akiteru Koh ,  Toshihiro Miura ,  Takayuki Fukasawa ,  Akitaka Shimizu ,  Masato Kushibiki ,  Asao Yamashita ,  Fumihiko Higuchi

IPC分类号： H01L21/28 ,  H01L21/3213 ,  C23F1/00

CPC分类号： H01J37/32082 ,  H01L21/28061 ,  H01L21/28123 ,  H01L21/32137

摘要： A tungsten silicide layer (104) is etched by plasma etching using Cl2+O2 gas as etching gas. When etching of the tungsten silicide layer (104) is ended substantially, etching gas is switched to Cl2+O2+NF3 and over etching is performed by plasma etching. Etching process is ended under a state where a polysilicon layer (103) formed beneath the tungsten silicide layer (104) is slightly etched uniformly. Residual quantity of the polysilicon layer (103) can be made uniform as compared with prior art and a high quality semiconductor device can be fabricated stably.

摘要翻译： 通过使用Cl 2 + O 2气体作为蚀刻气体的等离子体蚀刻来蚀刻硅化钨层（104）。 当硅化钨层（104）的蚀刻基本上结束时，蚀刻气体切换到Cl2 + O2 + NF3，并且通过等离子体蚀刻进行过蚀刻。 在钨硅化物层（104）下面形成的多晶硅层（103）被均匀地微蚀刻的状态下，结束蚀刻处理。 与现有技术相比，多晶硅层（103）的剩余量可以均匀，并且可以稳定地制造高质量的半导体器件。

公开(公告)号：US09245776B2

公开(公告)日：2016-01-26

申请号：US12979875

申请日：2010-12-28

申请人： Shinji Himori ,  Daisuke Hayashi ,  Akitaka Shimizu

发明人： Shinji Himori ,  Daisuke Hayashi ,  Akitaka Shimizu

IPC分类号： H01J37/32 ,  H01L21/67

CPC分类号： H01L21/67069 ,  H01J37/32091 ,  H01J37/32541 ,  H01J37/3255 ,  H01J37/32577 ,  H01J37/32605

摘要： A plasma processing apparatus includes a processing chamber in which a target substrate is processed; an application electrode and a facing electrode provided to face each other in the processing chamber, a plasma generation space being formed between the application electrode and the facing electrode; and an RF power supply connected to the application electrode, an RF power being supplied from the RF power supply to the application electrode. At least one of the application electrode and the facing electrode includes a base formed of a metal, and a dielectric body inserted into the base, one or more metal plate electrodes being buried in the dielectric body.

摘要翻译： 等离子体处理装置包括：处理室，其中处理目标基板; 在处理室中设置成面对的施加电极和对置电极，在施加电极和对置电极之间形成等离子体产生空间; 以及连接到施加电极的RF电源，RF电力从RF电源提供给施加电极。 施加电极和对置电极中的至少一个包括由金属形成的基底和插入到基底中的电介质体，一个或多个金属板电极被埋在电介质体内。

公开(公告)号：US08383517B2

公开(公告)日：2013-02-26

申请号：US12023491

申请日：2008-01-31

申请人： Eiichi Nishimura ,  Chie Kato ,  Akitaka Shimizu ,  Hiroyuki Takahashi

发明人： Eiichi Nishimura ,  Chie Kato ,  Akitaka Shimizu ,  Hiroyuki Takahashi

IPC分类号： H01L21/311

CPC分类号： H01L21/3065 ,  H01L21/02057

摘要： A substrate processing method that can selectively remove deposit produced through dry etching of silicon. A substrate has a silicon base material and a hard mask that is made of a silicon nitride film and/or a silicon oxide film and formed on the silicon base material, the hard mask having an opening to which at least part of the silicon base material is exposed. A trench corresponding to the opening is formed in the silicon base material through dry etching using plasma produced from halogenated gas. After the dry etching, the substrate is heated to a temperature of not less than 200° C., and then hydrogen fluoride gas and helium gas are supplied toward the substrate.

摘要翻译： 可以选择性地去除通过干蚀刻硅产生的沉积物的衬底处理方法。 基板具有硅基材料和由氮化硅膜和/或氧化硅膜制成并形成在硅基材上的硬掩模，硬掩模具有开口，至少部分硅基材料 被暴露。 通过使用由卤化气体产生的等离子体的干蚀刻，在硅基材中形成对应于开口的沟槽。 在干蚀刻之后，将基板加热至不低于200℃的温度，然后向基板供应氟化氢气体和氦气。

公开(公告)号：USRE43652E1

公开(公告)日：2012-09-11

申请号：US13278227

申请日：2011-10-21

申请人： Susumu Saito ,  Akitaka Shimizu

发明人： Susumu Saito ,  Akitaka Shimizu

IPC分类号： H01L21/66

CPC分类号： H01L21/67069 ,  H01L21/67242 ,  H01L22/12 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： In a substrate processing control method, a first process acquires a first-reflectance-spectrum of a beam reflected from the first-fine-structure and a second-reflectance-spectrum of a beam reflected from the second-fine-structure for each of varying-pattern-dimensions of the first-fine-structure when the pattern-dimension of the first-fine-structure is varied. A second process acquires reference-spectrum-data for each of the varying-pattern-dimensions of the first-fine-structure by overlapping the first-reflectance-spectrum with the second-reflectance-spectrum. A third process actually measures beams reflected from the first and the second-fine-structure, respectively, after irradiating light beam on to the substrate and acquiring reflectance-spectrums of the actual-measured beams as actual-measured spectrum data. A fourth process compares the actual-measured spectrum data with the respective reference-spectrum data and acquiring, as the measured pattern-dimension, one of the varying-pattern-dimensions corresponding to reference-spectrum data that is closely matches with the actual-measured spectrum data. A final process ends the processing of the substrate if the measured pattern-dimension reaches a value.

摘要翻译： 在基板处理控制方法中，第一处理取得从第一微细结构反射的光束的第一反射光谱和从第二微细结构反射的光束的第二反射光谱， 当第一微细结构的图案尺寸变化时，第一微细结构的图案尺寸。 第二过程通过将第一反射光谱与第二反射光谱重叠来获取第一精细结构的每个变化图形尺寸的参考光谱数据。 第三处理实际上是在将光束照射到衬底上之后分别测量从第一和第二微细结构反射的光束，并且将实测光束的反射光谱作为实测光谱数据进行测量。 第四个过程将实际测量的频谱数据与相应的参考频谱数据进行比较，并且将与参考频谱数据相对应的变化模式维度中的一个与实际测量的频谱数据紧密匹配，作为测量的模式维度 频谱数据。 如果测量的图案尺寸达到一个值，则最后的处理结束衬底的处理。