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公开(公告)号：US20070053397A1
公开(公告)日：2007-03-08
申请号：US11326430
申请日：2006-01-06
申请人： David Burckel , Steven Brueck , Kevin Malloy , Andreas Stintz
发明人： David Burckel , Steven Brueck , Kevin Malloy , Andreas Stintz
CPC分类号： H01S5/187
摘要： A semiconductor laser having an angled facet is provided. The semiconductor laser includes a first distributed Bragg reflector (DBR). The laser further includes an active region coupled to the first DBR, wherein the active region comprises a highly reflective facet and a partially reflective facet, and a second DBR coupled to the active region. The highly reflective facet, the partially reflective facet, the first DBR, and the second DBR form a laser cavity having a shape that is not rectangular. An angled facet emitter enables, for example, single vertical transverse mode operation of optically thick epitaxial gain regions.
摘要翻译： 提供具有成角度小面的半导体激光器。 半导体激光器包括第一分布式布拉格反射器（DBR）。 激光器还包括耦合到第一DBR的有源区，其中有源区包括高反射小面和部分反射小面，以及耦合到有源区的第二DBR。 高反射面，部分反射面，第一DBR和第二DBR形成具有不是矩形的形状的激光腔。 成角度的小面发射器能够实现例如光学厚的外延增益区域的单一垂直横向模式操作。
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公开(公告)号：US06600169B2
公开(公告)日：2003-07-29
申请号：US09961560
申请日：2001-09-20
申请人： Andreas Stintz , Petros M Varangis , Kevin J Malloy , Luke F Lester , Timothy C Newell , Hua Li
发明人： Andreas Stintz , Petros M Varangis , Kevin J Malloy , Luke F Lester , Timothy C Newell , Hua Li
IPC分类号： H01L2906
CPC分类号： B82Y30/00 , B82Y10/00 , B82Y20/00 , H01S5/1228 , H01S5/143 , H01S5/183 , H01S5/3201 , H01S5/34 , H01S5/341 , H01S5/3412 , H01S5/4031 , H01S5/4043 , H01S5/4087
摘要： Quantum dot active region structures are disclosed. In a preferred embodiment, the distribution in dot size and the sequence of optical transition energy values associated with the quantum confined states of the dots are selected to facilitate forming a continuous optical gain spectrum over an extended wavelength range. In one embodiment, the quantum dots are self-assembled quantum dots with a length-to-width ratio of at least three along the growth plane. In one embodiment, the quantum dots are formed in quantum wells for improved carrier confinement. In other embodiments, the quantum dots are used as the active region in laser devices, including tunable lasers and monolithic multi-wavelength laser arrays.
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公开(公告)号：US07282732B2
公开(公告)日：2007-10-16
申请号：US10971555
申请日：2004-10-21
IPC分类号： H01L29/06
CPC分类号： B82Y10/00 , B82Y20/00 , H01L21/02392 , H01L21/02433 , H01L21/02463 , H01L21/02505 , H01L21/02513 , H01L21/02546 , H01S5/2201 , H01S5/3412 , H01S5/34366 , H01S2304/02
摘要： Symmetric quantum dots are embedded in quantum wells. The symmetry is achieved by using slightly off-axis substrates and/or overpressure during the quantum dot growth. The quantum dot structure can be used in a variety of applications, including semiconductor lasers.
摘要翻译： 对称量子点嵌入在量子阱中。 通过在量子点生长期间使用稍微离轴的衬底和/或超压实现对称性。 量子点结构可用于各种应用，包括半导体激光器。
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公开(公告)号：US20050199870A1
公开(公告)日：2005-09-15
申请号：US10971555
申请日：2004-10-21
申请人： Allen Gray , Andreas Stintz , Kevin Malloy , Luke Lester , Petros Varangis
发明人： Allen Gray , Andreas Stintz , Kevin Malloy , Luke Lester , Petros Varangis
CPC分类号： B82Y10/00 , B82Y20/00 , H01L21/02392 , H01L21/02433 , H01L21/02463 , H01L21/02505 , H01L21/02513 , H01L21/02546 , H01S5/2201 , H01S5/3412 , H01S5/34366 , H01S2304/02
摘要： Symmetric quantum dots are embedded in quantum wells. The symmetry is achieved by using slightly off-axis substrates and/or overpressure during the quantum dot growth. The quantum dot structure can be used in a variety of applications, including semiconductor lasers.
摘要翻译： 对称量子点嵌入在量子阱中。 通过在量子点生长期间使用稍微离轴的衬底和/或超压实现对称性。 量子点结构可用于各种应用，包括半导体激光器。
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公开(公告)号：US06816525B2
公开(公告)日：2004-11-09
申请号：US09972303
申请日：2001-10-05
申请人： Andreas Stintz , Petros M. Varangis , Kevin J. Malloy , Luke Lester , Timothy C. Newell , Hua Li
发明人： Andreas Stintz , Petros M. Varangis , Kevin J. Malloy , Luke Lester , Timothy C. Newell , Hua Li
IPC分类号： H01S534
CPC分类号： H01S5/341 , B82Y10/00 , B82Y20/00 , G02F2001/01791 , H01S5/06256 , H01S5/141 , H01S5/143 , H01S5/3412 , H01S5/4087 , H01S2301/04 , H01S2302/00 , Y10S977/951
摘要： A quantum dot active region is disclosed in which quantum dot layers are formed using a self-assembled growth technique. In one embodiment, growth parameters are selected to control the dot density and dot size distribution to achieve desired optical gain spectrum characteristics. In one embodiment, the distribution in dot size and the sequence of optical transition energy values associated with the quantum confined states of the dots are selected to facilitate forming a continuous optical gain spectrum over an extended wavelength range. In another embodiment, the optical gain is selected to increase the saturated ground state gain for wavelengths of 1260 nanometers and greater. In other embodiments, the quantum dots are used as the active region in laser devices, including tunable lasers and monolithic multi-wavelength laser arrays.
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公开(公告)号：US06782021B2
公开(公告)日：2004-08-24
申请号：US10087408
申请日：2002-03-01
申请人： Xiaodong Huang , Andreas Stintz , Kevin Malloy , Guangtian Liu , Luke Lester , Julian Cheng
发明人： Xiaodong Huang , Andreas Stintz , Kevin Malloy , Guangtian Liu , Luke Lester , Julian Cheng
IPC分类号： H01S534
CPC分类号： B82Y30/00 , B82Y10/00 , B82Y20/00 , H01S5/0421 , H01S5/0425 , H01S5/18311 , H01S5/1833 , H01S5/18341 , H01S5/1835 , H01S5/18358 , H01S5/18372 , H01S5/18383 , H01S5/18397 , H01S5/305 , H01S5/3054 , H01S5/3412 , Y10S977/951
摘要： A quantum dot vertical cavity surface-emitting laser has a low threshold gain. Top and bottom mirrors have a low mirror loss, with at least one of the mirrors being laterally oxidized to form semiconductor/oxide mirror pairs. In one embodiment, mode control layers reduce the optical field intensity in contact layers, reducing optical absorption. In one embodiment, delamination features are included to inhibit the tendency of laterally oxidized mirrors from delaminating.
摘要翻译： 量子点垂直腔表面发射激光器具有低阈值增益。 顶部和底部反射镜具有低镜面损失，其中至少一个反射镜被横向氧化以形成半导体/氧化物镜对。 在一个实施例中，模式控制层降低接触层中的光场强度，降低光吸收。 在一个实施例中，包括分层特征以抑制侧向氧化反射镜脱层的倾向。
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