摘要:
In one embodiment, an apparatus comprises a semiconductor device, a heat dissipation assembly, and a thermal interface material disposed between the semiconductor device and the heat dissipation assembly, wherein the thermal interface layer comprises a pre-coated flux material.
摘要:
A method includes providing a mixture of molten indium and molten aluminum, and agitating the mixture while reducing its temperature until the aluminum changes from liquid phase to solid phase, forming particles distributed within the molten indium. Agitation of the mixture sufficiently to maintain the aluminum substantially suspended in the molten aluminum continues while further reducing the temperature of the mixture until the indium changes from a liquid phase to a solid phase. A metallic composition is formed, including indium and particles of aluminum suspended within the indium, the aluminum particles being substantially free from oxidation.The metallic (solder) composition can be used to form an assembly, including an integrated circuit (IC) device, at least a first thermal component disposed adjacent to the IC device, and a solder TIM interposed between and thermally coupled with each of the IC device and the first thermal component.
摘要:
A method for forming a high thermal conductivity heat sink to IC package interface is disclosed. The method uses reactive getter materials added to a two phase solder system having a phase change temperature that is about the normal operating temperature range of the IC, to bind absorbed and dissolved oxygen in the two phase solder interface material at or near the air to solder surface. Over time this chemical binding action results in an oxide layer at the air to solder surface that slows the rate of oxygen absorption into the solder interface material, and thus reduces the harmful oxidation of the solder to IC package interface and the solder to heat sink interface.
摘要:
A composition includes a solder paste matrix and a solder mixture including a tin-based solder alloy. The composition also includes a discrete dispersion of a metal. The tin-based alloy includes a melting first temperature and the metal includes a melting second temperature. The melting second temperature is greater than the melting first temperature. The discrete dispersion is in a particle range of a majority passing minus 520-mesh. A process includes blending the solder mixture and the metal under non-alloying conditions to achieve the discrete dispersion of the metal. A process includes reflowing the composition such that the composition when solidified, has a melting point that is higher than the solder mixture in the composition.
摘要:
A method includes providing a mixture of molten indium and molten aluminum, and agitating the mixture while reducing its temperature until the aluminum changes from liquid phase to solid phase, forming particles distributed within the molten indium. Agitation of the mixture sufficiently to maintain the aluminum substantially suspended in the molten aluminum continues while further reducing the temperature of the mixture until the indium changes from a liquid phase to a solid phase. A metallic composition is formed, including indium and particles of aluminum suspended within the indium, the aluminum particles being substantially free from oxidation.The metallic (solder) composition can be used to form an assembly, including an integrated circuit (IC) device, at least a first thermal component disposed adjacent to the IC device, and a solder TIM interposed between and thermally coupled with each of the IC device and the first thermal component.
摘要:
Devices and systems including a heat spreader with possibly controlled thermal expansion. For example, an integral heat spreader may include an insert formed of a high thermal conductivity material with a first coefficient of thermal expansion, and a ring formed of a stiff material with a second coefficient of thermal expansion, wherein the second coefficient of thermal expansion is smaller or significantly smaller than the first coefficient of thermal expansion. An integral heat spreader may optionally include, for example, a plating, a coating, or a patch, and may be included, for example, in a semiconductor device.
摘要:
In one embodiment, the present invention includes a method for placing a thermal interface material (TIM) between a die including a backside metallic (BSM) layer including copper (Cu) and a heat spreader having a contact surface including Cu, where the TIM is formed of an alloy including indium (In) and tin (Sn), and bonding the TIM to the die and the heat spreader to form at least one quaternary intermetallic compound (IMC) layer. Other embodiments are described and claimed.
摘要:
In one embodiment, the present invention includes a method for placing a thermal interface material (TIM) between a die including a backside metallic (BSM) layer including copper (Cu) and a heat spreader having a contact surface including Cu, where the TIM is formed of an alloy including indium (In) and tin (Sn), and bonding the TIM to the die and the heat spreader to form at least one quaternary intermetallic compound (IMC) layer. Other embodiments are described and claimed.
摘要:
In one embodiment, the present invention includes a method for placing a thermal interface material (TIM) between a die including a backside metallic (BSM) layer including copper (Cu) and a heat spreader having a contact surface including Cu, where the TIM is formed of an alloy including indium (In) and tin (Sn), and bonding the TIM to the die and the heat spreader to form at least one quaternary intermetallic compound (IMC) layer. Other embodiments are described and claimed.
摘要:
A method includes providing a mixture of molten indium and molten aluminum, and agitating the mixture while reducing its temperature until the aluminum changes from liquid phase to solid phase, forming particles distributed within the molten indium. Agitation of the mixture sufficiently to maintain the aluminum substantially suspended in the molten aluminum continues while further reducing the temperature of the mixture until the indium changes from a liquid phase to a solid phase. A metallic composition is formed, including indium and particles of aluminum suspended within the indium, the aluminum particles being substantially free from oxidation.The metallic (solder) composition can be used to form an assembly, including an integrated circuit (IC) device, at least a first thermal component disposed adjacent to the IC device, and a solder TIM interposed between and thermally coupled with each of the IC device and the first thermal component.