公开(公告)号：US08870051B2

公开(公告)日：2014-10-28

申请号：US13463412

申请日：2012-05-03

申请人： Peter J. Brofman ,  Jae-Woong Nah ,  Katsuyuki Sakuma

发明人： Peter J. Brofman ,  Jae-Woong Nah ,  Katsuyuki Sakuma

IPC分类号： B23K37/04

CPC分类号： B23K31/02 ,  B23K1/0016 ,  B23K3/047 ,  B23K35/0222 ,  B23K37/04 ,  B23K2101/40 ,  H01L24/81 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/15787 ,  H01L2924/00

摘要： A flip chip assembly apparatus includes at least one warpage-suppressor assembly. Each warpage-suppressor assembly can include a side heater, a deformable material pad, and an actuator assembly for moving the side heater and the deformable material pad. Each side heater provides additional heat to peripheral solder balls during bonding of two substrates, thereby facilitating the reflow of the peripheral solder balls. Each deformable material pad contacts, and presses down on, a surface of one of the two substrates under bonding. The deformable material pad(s) can prevent or minimize warpage of the contacted substrate.

摘要翻译： 倒装芯片组装装置包括至少一个翘曲抑制组件。 每个翘曲抑制组件可以包括侧加热器，可变形材料垫和用于移动侧加热器和可变形材料垫的致动器组件。 每个侧面加热器在两个基板的接合期间向外围焊球提供额外的热量，从而便于外围焊球的回流。 每个可变形材料焊盘在粘合下接触并压下两个基板之一的表面。 可变形材料垫可以防止或最小化接触的基底的翘曲。

公开(公告)号：US07514290B1

公开(公告)日：2009-04-07

申请号：US12108512

申请日：2008-04-24

申请人： Katsuyuki Sakuma ,  Paul Stephen Andry ,  Kuniaki Sueoka ,  John Ulrich Knickerbocker

发明人： Katsuyuki Sakuma ,  Paul Stephen Andry ,  Kuniaki Sueoka ,  John Ulrich Knickerbocker

IPC分类号： H01L21/00

CPC分类号： H01L25/50 ,  H01L24/80 ,  H01L2924/01006 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01074 ,  H01L2924/09701

摘要： This embodiment addresses a novel Chip-to-wafer chip lamination technique that provides low cost and high throughput. In the Chip-to-Chip process, using the temperature rise and utilizing deformation caused by thermal expansion of a metal shim inserted between the inner wall of a cavity, in which multiple chips are laminated and accommodated, multiple chips in the cavity are pressed against a reference surface on a side wall of the cavity to automatically perform positioning.

摘要翻译： 本实施例解决了提供低成本和高吞吐量的新型芯片到晶片芯片层叠技术。 在芯片到芯片工艺中，使用温度升高并且利用插入在空腔的内壁之间的金属垫片的热膨胀引起的变形，其中多个芯片被层压和容纳在腔体中的多个芯片被压靠 空腔侧壁上的参考表面，以自动执行定位。

公开(公告)号：US20070010174A1

公开(公告)日：2007-01-11

申请号：US11175604

申请日：2005-07-05

申请人： Keiji Mase ,  Shozo Ishibashi ,  Katsuyuki Sakuma

发明人： Keiji Mase ,  Shozo Ishibashi ,  Katsuyuki Sakuma

IPC分类号： B24C1/00 ,  B24C7/00

CPC分类号： B24C7/0046

摘要： To provide an injection material pressurized feeding method to stably supply a fixed quantity of an injection material without aggregation and consolidation of the injection material even if the injection material having small particle diameter is used for blasting. A fixed quantity of the injection material is introduced from the injection material tank 2 to a cylindrical pressurizing tank 11 provided between the injection material tank 2 of the blasting device 1 and a blast nozzle, and introduction of compressed stirring gas is started at a deposition part of the injection material introduced in the pressurizing tank 11 then the injection material is stirred in the pressurizing tank 11, and an inside of the pressurizing tank 11 is pressurized by starting introduction of compressed pressurizing gas from a pressurizing tank side wall 11b, thereby the injection material in the state of stirring is pressure-fed to the blast nozzle.

摘要翻译： 为了提供注射材料加压进料方法，即使使用具有小粒径的注射材料用于喷砂，也可以稳定地供给固定量的注射材料，而不会使注射材料凝集和固化。 将注入材料的固定量从喷射槽2引入设置在喷砂装置1的喷射槽2与鼓风喷嘴之间的圆筒形的加压槽11中，并且在沉积部分开始引入压缩的搅拌气体 在加压槽11中引入注入材料，然后在加压槽11中搅拌注入材料，通过从加压槽侧壁11b开始引入压缩的加压气体，对加压槽11的内部进行加压， 在搅拌状态下的喷射材料被压力送入喷嘴。

公开(公告)号：US09385039B2

公开(公告)日：2016-07-05

申请号：US14559656

申请日：2014-12-03

申请人： Katsuyuki Sakuma

发明人： Katsuyuki Sakuma

IPC分类号： H01L23/48 ,  H01L21/44 ,  H01L21/768 ,  H01L23/14 ,  H01L25/065 ,  H01L23/498 ,  H01L21/48 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L21/76898 ,  H01L21/486 ,  H01L23/147 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/11 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/171 ,  H01L2224/17181 ,  H01L2224/73204 ,  H01L2224/81815 ,  H01L2224/9202 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/05552

摘要： To form a through-silicon via (TSV) in a silicon substrate without using plating equipment or using sputtering equipment or small metal particles, and form an interlayer connection by stacking a plurality of such silicon substrates, a through hole of a silicon substrate is filled using molten solder itself. In detail, solid solder placed above the through hole of the silicon substrate is molten and the molten solder is guided to and filled in the internal space. A metal layer can be deposited on an internal surface of the through hole beforehand, and also an intermetallic compound (IMC) can be formed in a portion other than the metal layer.

公开(公告)号：US20130049193A1

公开(公告)日：2013-02-28

申请号：US13597948

申请日：2012-08-29

申请人： Katsuyuki Sakuma

发明人： Katsuyuki Sakuma

IPC分类号： H01L21/768 ,  H01L23/498 ,  H01L23/48

CPC分类号： H01L21/76898 ,  H01L21/486 ,  H01L23/147 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/11 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/171 ,  H01L2224/17181 ,  H01L2224/73204 ,  H01L2224/81815 ,  H01L2224/9202 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/05552

摘要： To form a through-silicon via (TSV) in a silicon substrate without using plating equipment or using sputtering equipment or small metal particles, and form an interlayer connection by stacking a plurality of such silicon substrates, a through hole of a silicon substrate is filled using molten solder itself. In detail, solid solder placed above the through hole of the silicon substrate is molten and the molten solder is guided to and filled in the internal space. A metal layer can be deposited on an internal surface of the through hole beforehand, and also an intermetallic compound (IMC) can be formed in a portion other than the metal layer.

公开(公告)号：US06937233B2

公开(公告)日：2005-08-30

申请号：US10064260

申请日：2002-06-26

申请人： Katsuyuki Sakuma ,  Yoshitami Sakaguchi

发明人： Katsuyuki Sakuma ,  Yoshitami Sakaguchi

IPC分类号： G02F1/133 ,  G09G3/20 ,  G09G3/36 ,  G09G5/00

CPC分类号： G09G3/3688 ,  G09G3/3648 ,  G09G2310/027 ,  G09G2320/0276 ,  G09G2330/02 ,  G09G2330/021

摘要： JP920010143US1 A liquid crystal display includes liquid crystal cells for forming an image display area on a substrate, a source driver for applying a voltage to the liquid crystal cells using a plurality of source driver ICs to which power is supplied in a single stroke of the brush fashion and an LCD controller for processing signals received from a host's side via video I/F and supplying the processed signals to the source driver Ics. The source driver delays the start timing for writing the liquid crystal cells among the plurality of source driver ICs respectively to avoid the concentration of current consumption.

摘要翻译： JP920010143US1液晶显示器包括用于在基板上形成图像显示区域的液晶单元，用于在电刷的单次行程中使用供电的多个源极驱动器IC向液晶单元施加电压的源极驱动器 时尚和LCD控制器，用于经由视频I / F处理从主机侧接收的信号，并将处理的信号提供给源极驱动器Ics。 源极驱动器分别延迟在多个源极驱动器IC之间写入液晶单元的开始时间，以避免电流消耗的集中。

公开(公告)号：US08987131B2

公开(公告)日：2015-03-24

申请号：US13597948

申请日：2012-08-29

申请人： Katsuyuki Sakuma

发明人： Katsuyuki Sakuma

IPC分类号： H01L21/44 ,  H01L21/768 ,  H01L23/48 ,  H01L23/14 ,  H01L25/065 ,  H01L23/498 ,  H01L21/48 ,  H01L23/31 ,  H01L23/00

CPC分类号： H01L21/76898 ,  H01L21/486 ,  H01L23/147 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49827 ,  H01L24/11 ,  H01L24/16 ,  H01L24/17 ,  H01L24/81 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/16146 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/171 ,  H01L2224/17181 ,  H01L2224/73204 ,  H01L2224/81815 ,  H01L2224/9202 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06541 ,  H01L2225/06565 ,  H01L2924/00014 ,  H01L2924/01327 ,  H01L2924/10253 ,  H01L2924/15311 ,  H01L2924/014 ,  H01L2924/00 ,  H01L2224/05552

摘要： To form a through-silicon via (TSV) in a silicon substrate without using plating equipment or using sputtering equipment or small metal particles, and form an interlayer connection by stacking a plurality of such silicon substrates, a through hole of a silicon substrate is filled using molten solder itself. In detail, solid solder placed above the through hole of the silicon substrate is molten and the molten solder is guided to and filled in the internal space. A metal layer can be deposited on an internal surface of the through hole beforehand, and also an intermetallic compound (IMC) can be formed in a portion other than the metal layer.

摘要翻译： 为了在硅衬底中形成硅通孔（TSV），不使用电镀设备或使用溅射设备或小金属颗粒，并且通过堆叠多个这样的硅衬底形成层间连接，填充硅衬底的通孔 使用熔融焊料本身。 详细地说，放置在硅衬底的通孔之上的固体焊料熔化，熔化的焊料被引导并填充在内部空间中。 可以预先在通孔的内表面上沉积金属层，也可以在金属层以外的部分形成金属间化合物（IMC）。

公开(公告)号：US20130292455A1

公开(公告)日：2013-11-07

申请号：US13463412

申请日：2012-05-03

申请人： Peter J. Brofman ,  Jae-Woong Nah ,  Katsuyuki Sakuma

发明人： Peter J. Brofman ,  Jae-Woong Nah ,  Katsuyuki Sakuma

IPC分类号： B23K31/02 ,  B23K37/04

CPC分类号： B23K31/02 ,  B23K1/0016 ,  B23K3/047 ,  B23K35/0222 ,  B23K37/04 ,  B23K2101/40 ,  H01L24/81 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/15787 ,  H01L2924/00

摘要： A flip chip assembly apparatus includes at least one warpage-suppressor assembly. Each warpage-suppressor assembly can include a side heater, a deformable material pad, and an actuator assembly for moving the side heater and the deformable material pad. Each side heater provides additional heat to peripheral solder balls during bonding of two substrates, thereby facilitating the reflow of the peripheral solder balls. Each deformable material pad contacts, and presses down on, a surface of one of the two substrates under bonding. The deformable material pad(s) can prevent or minimize warpage of the contacted substrate.

摘要翻译： 倒装芯片组装装置包括至少一个翘曲抑制组件。 每个翘曲抑制组件可以包括侧加热器，可变形材料垫和用于移动侧加热器和可变形材料垫的致动器组件。 每个侧面加热器在两个基板的接合期间向外围焊球提供额外的热量，从而便于外围焊球的回流。 每个可变形材料焊盘在粘合下接触并压下两个基板之一的表面。 可变形材料垫可以防止或最小化接触的基底的翘曲。

公开(公告)号：US20100122719A1

公开(公告)日：2010-05-20

申请号：US12611230

申请日：2009-11-03

申请人： Keiji MASE ,  Katsuyuki Sakuma ,  Shigeru Fujinori

发明人： Keiji MASE ,  Katsuyuki Sakuma ,  Shigeru Fujinori

IPC分类号： H01L31/042 ,  B24C1/00 ,  B24C3/32 ,  B24C9/00

CPC分类号： B24C1/04 ,  B24C1/086 ,  B24C9/003 ,  H01L31/022425 ,  H01L31/0392 ,  H01L31/186 ,  Y02E10/50 ,  Y02P70/521

摘要： Particularly, a thin-film solar cell panel or the like is processed without necessity of attaching and detaching of mask and washing steps with respect to a workpiece in a fine blasting employing a fine abrasive. A negative pressure space (20) and an opposing negative pressure space (40) having openings (22, 42) are opposed by being spaced at a movement allowable interval of the workpiece such as a thin-film solar cell panel or the like and so as to face one side edge in the same direction as a moving direction of the workpiece. Then, a fine abrasive is injected from a blast gun (30) in which an injection hole (31) is disposed within the negative pressure space (20), the workpiece is relatively moved in a moving direction (T) with respect to the injection hole, and while the fine abrasive is injected, compressed gas generating a gas flow having a diffusing direction substantially parallel to the relative moving direction of the workpiece to carry out air blow, thereby the fine abrasive and a cut scrap injected from a space within each of negative pressure space through the intermediary of a suction device communicated with the negative pressure space (20) and/or the opposing negative pressure space (40).

摘要翻译： 特别地，在使用细磨料的细微喷砂中，不需要在工件上相对于工件而不需要安装和拆卸掩模和洗涤步骤来处理薄膜太阳能电池板等。 具有开口（22,42）的负压空间（20）和相对的负压空间（40）通过在诸如薄膜太阳能电池板等的工件的移动允许间隔处间隔开 面向与工件的移动方向相同的方向的一个侧边缘。 然后，从其中在负压空间（20）内设置有注入孔（31）的喷枪（30）喷射精细研磨剂，使工件相对于注射器沿移动方向（T）相对移动 并且在注入细磨料的同时，压缩气体产生具有基本上平行于工件的相对移动方向的扩散方向的气流，从而进行吹气，从而从每个内部的空间注入细磨料和切割废料 通过与负压空间（20）和/或相对的负压空间（40）连通的抽吸装置的中间的负压空间。

公开(公告)号：US20140013606A1

公开(公告)日：2014-01-16

申请号：US13567567

申请日：2012-08-06

申请人： Jae-Woong Nah ,  Katsuyuki Sakuma ,  Bucknell C. Webb

发明人： Jae-Woong Nah ,  Katsuyuki Sakuma ,  Bucknell C. Webb

IPC分类号： B43L7/00

CPC分类号： H01L21/50 ,  H01L21/561 ,  H01L24/97 ,  H01L25/0657 ,  H01L25/50 ,  H01L2224/131 ,  H01L2224/16145 ,  H01L2224/16225 ,  H01L2224/16227 ,  H01L2224/73204 ,  H01L2224/97 ,  H01L2225/06513 ,  H01L2225/06517 ,  H01L2225/06582 ,  H01L2224/32145 ,  H01L2924/00012 ,  H01L2224/32225 ,  H01L2224/81 ,  H01L2924/014

摘要： A template having tapered openings can be employed to enable injection of underfill material through gaps having a width less than a lateral dimension of an injector needle for the underfill material. Each tapered opening has a first lateral dimension on an upper side and a second lateral dimension on a lower side. Compliant material portions can be employed to accommodate variations in distance between the template and stacked semiconductor chips and/or an injector head. Optionally, another head can be employed to apply compressed gas to push out the underfill material after the underfill material is applied to the gaps. Multiple injector heads can be employed to simultaneously inject the underfill material at different sites. An adhesive layer can be substituted for the at least one lower compliant material portion.

摘要翻译： 可以使用具有锥形开口的模板，以使得能够通过具有小于底部填充材料的注射器针的横向尺寸的间隙的间隙注入底部填充材料。 每个锥形开口具有在上侧上的第一横向尺寸和在下侧上的第二横向尺寸。 可以采用符合材料的部分来适应模板和堆叠的半导体芯片和/或注射器头之间的距离的变化。 可选地，在将底部填充材料施加到间隙之后，可以使用另一个头部来施加压缩气体以推出底部填充材料。 可以使用多个注射器头来同时将底部填充材料注入不同的位置。 粘合剂层可以代替至少一个下顺应材料部分。