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公开(公告)号：US5079031A
公开(公告)日：1992-01-07
申请号：US324669
申请日：1989-03-17
申请人： Shunpei Yamazaki , Shinji Imatou , Noriya Ishida , Mari Sasaki , Mitsunori Sakama , Takeshi Fukada , Naoki Hirose , Mitsunori Tsuchiya , Atsushi Kawano , Kazuhisa Nakashita , Junichi Takeyama , Toshiji Hamatani
发明人： Shunpei Yamazaki , Shinji Imatou , Noriya Ishida , Mari Sasaki , Mitsunori Sakama , Takeshi Fukada , Naoki Hirose , Mitsunori Tsuchiya , Atsushi Kawano , Kazuhisa Nakashita , Junichi Takeyama , Toshiji Hamatani
IPC分类号： C23C16/517 , H01J37/32
CPC分类号： H01J37/3244 , C23C16/517 , H01J37/32082 , H01J37/32568 , H01J2237/3321
摘要： An improved apparatus and method for depositing thin films on a substrate. The apparatus utilizes two types of energy input. A pair of electrodes are provided in a reaction chamber and supplied with first AC electric energy at 1 to 100 MHz for generating a plasma gas in a reaction chamber therebetween. The substrate is mounted on a substrate holder to which second electric energy is supplied.
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公开(公告)号：US06977192B2
公开(公告)日：2005-12-20
申请号：US10254142
申请日：2002-09-24
IPC分类号： G02F1/1368 , H01L21/336 , H01L21/77 , H01L29/786 , H01L21/00
CPC分类号： H01L27/1222 , H01L27/1214 , H01L27/1274 , H01L29/66765 , H01L29/78618 , H01L29/78669 , H01L29/78678 , H01L29/78696 , Y10S438/908
摘要： In manufacturing a thin film semiconductor device, a gate electrode forming step, a gate insulating film forming step, an amorphous semiconductor film forming step, a crystalline semiconductor film forming step, and an insulating film forming step are performed continuously without breaking vacuum.
摘要翻译： 在制造薄膜半导体器件中，连续地连续地进行栅极形成步骤，栅极绝缘膜形成步骤，非晶半导体膜形成步骤，结晶半导体膜形成步骤和绝缘膜形成步骤。
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公开(公告)号：US06204519B1
公开(公告)日：2001-03-20
申请号：US08813541
申请日：1997-03-07
IPC分类号： H01L2904
CPC分类号： H01L27/1222 , H01L27/1214 , H01L27/1274 , H01L29/66765 , H01L29/78618 , H01L29/78669 , H01L29/78678 , H01L29/78696 , Y10S438/908
摘要： A thin film semiconductor device comprising a substrate having an insulating surface, gate electrodes disposed on the insulating surface, gate insulating films disposed on upper portions of the gate electrodes, and thin film semiconductors disposed on the gate insulating films and including channel forming regions, source regions and drain regions. Two kinds of thin film semiconductor unit are disposed on the substrate. A first thin film semiconductor unit includes the thin film semiconductor of polycrystal, an insulating film covering an upper portion of the channel forming region, impurity semiconductor films doped with trivalent or pentavalent impurities and covering the source region and the drain region, and conductive films disposed on the impurity semiconductor films. A second thin film semiconductor unit includes the thin film semiconductor of amorphous, and other components similar to the first thin film semiconductor unit.
摘要翻译： 一种薄膜半导体器件，包括具有绝缘表面的衬底，设置在绝缘表面上的栅极电极，设置在栅极电极的上部的栅极绝缘膜，以及设置在栅极绝缘膜上并且包括沟道形成区域的源极 区域和排水区域。 两种薄膜半导体单元设置在基板上。 第一薄膜半导体单元包括多晶薄膜半导体，覆盖沟道形成区的上部的绝缘膜，掺杂有三价或五价杂质的杂质半导体膜，并覆盖源极区和漏极区，以及设置导电膜 在杂质半导体膜上。 第二薄膜半导体单元包括非晶体的薄膜半导体和类似于第一薄膜半导体单元的其它部件。
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公开(公告)号：US07763503B2
公开(公告)日：2010-07-27
申请号：US11275209
申请日：2005-12-19
IPC分类号： H01L21/84
CPC分类号： H01L27/1222 , H01L27/1214 , H01L27/1274 , H01L29/66765 , H01L29/78618 , H01L29/78669 , H01L29/78678 , H01L29/78696 , Y10S438/908
摘要： In a semiconductor device manufacturing process, a gate insulating film forming step, an amorphous semiconductor film forming step, and an insulating film forming step are continuously performed without taking out the substrate to the atmosphere.
摘要翻译： 在半导体器件制造工艺中，连续地执行栅绝缘膜形成步骤，非晶半导体膜形成步骤和绝缘膜形成步骤，而不将基板取出到大气中。
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公开(公告)号：US20060105514A1
公开(公告)日：2006-05-18
申请号：US11275209
申请日：2005-12-19
IPC分类号： H01L21/8234 , H01L21/336
CPC分类号： H01L27/1222 , H01L27/1214 , H01L27/1274 , H01L29/66765 , H01L29/78618 , H01L29/78669 , H01L29/78678 , H01L29/78696 , Y10S438/908
摘要： Two kinds of a thin film semiconductor unit are disposed over a substrate. A first thin film semiconductor unit includes a polycrystalline semiconductor thin film, and a second thin film semiconductor unit includes an amorphous semiconductor thin film.
摘要翻译： 在基板上设置两种薄膜半导体单元。 第一薄膜半导体单元包括多晶半导体薄膜，第二薄膜半导体单元包括非晶半导体薄膜。
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公开(公告)号：US06458635B2
公开(公告)日：2002-10-01
申请号：US09812359
申请日：2001-03-19
IPC分类号： H01L2100
CPC分类号： H01L27/1222 , H01L27/1214 , H01L27/1274 , H01L29/66765 , H01L29/78618 , H01L29/78669 , H01L29/78678 , H01L29/78696 , Y10S438/908
摘要： In a semiconductor device manufacturing process, a gate insulating film forming step, an amorphous semiconductor film forming step, a crystallizing step and an etch stopper insulating film forming step are continuously performed without exposing the atmosphere.
摘要翻译： 在半导体器件制造工艺中，连续地进行栅极绝缘膜形成步骤，非晶半导体膜形成步骤，结晶步骤和蚀刻停止绝缘膜形成步骤，而不暴露气氛。
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7.发明授权APCVD method of forming silicon oxide using an organic silane, oxidizing agent, and catalyst-formed hydrogen radical 失效使用有机硅烷，氧化剂和催化剂形成的氢根形成氧化硅的APCVD方法公开(公告)号：US07491659B2
公开(公告)日：2009-02-17
申请号：US10737855
申请日：2003-12-18
IPC分类号： H01L21/31
CPC分类号： H01L21/02126 , C03C17/245 , C03C2218/1525 , C03C2218/153 , C23C16/402 , H01L21/02131 , H01L21/0214 , H01L21/02164 , H01L21/02211 , H01L21/02216 , H01L21/02271 , H01L21/02274 , H01L21/31612
摘要： In forming various types of insulating films in manufacture of a semiconductor device, carbon is gasified into CHx, COH etc. during film formation by adding active hydrogen and nitrogen oxide to reduce the carbon content during the film formation, and the effect of blocking impurities such as alkali metals is improved.
摘要翻译： 在半导体器件的制造中形成各种类型的绝缘膜时，通过添加活性氢和氮氧化物在成膜期间将碳气化到CHx，COH等中以降低成膜期间的碳含量，以及将杂质 因为碱金属得到改善。
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8.发明授权Insulating film formed using an organic silane and method of producing semiconductor device 有权使用有机硅烷形成的绝缘膜和制造半导体器件的方法
公开(公告)号：US6025630A
公开(公告)日：2000-02-15
申请号：US190828
申请日：1998-11-12
IPC分类号： H01L21/316 , H01L27/01 , H01L29/76 , H01L29/94 , H01L31/062
CPC分类号： H01L21/02131 , H01L21/02126 , H01L21/02205 , H01L21/02216 , H01L21/02274 , H01L21/31612 , H01L21/31629
摘要： A silicon oxide film is formed to cover an island non-monocrystalline silicon region by plasma CVD using an organic silane having ethoxy groups (e.g., TEOS) and oxygen as raw materials, while hydrogen chloride or a chlorine-containing hydrocarbon (e.g., trichloroethylene) of a fluorine-containing gas is added to the plasma CVD atmosphere, preferably in an amount of from 0.01 to 1 mol % of the atmosphere so as to reduce the alkali elements from the silicon oxide film formed and to improve the reliability of the film. Prior to forming the silicon oxide film, the silicon region may be treated in a plasma atmosphere containing oxygen and hydrogen chloride or a chlorine-containing hydrocarbon. The silicon oxide film is obtained at low temperatures and this has high reliability usable as a gate-insulating film in a semiconductor device.
摘要翻译： 通过使用具有乙氧基（例如TEOS）和氧作为原料的有机硅烷等离子体CVD，形成氧化硅膜以覆盖岛状非单晶硅区域，而氯化氢或含氯烃（例如三氯乙烯） 的含氟气体添加到等离子体CVD气氛中，优选为0.01〜1摩尔％的气氛，以减少形成的氧化硅膜的碱元素，提高膜的可靠性。 在形成氧化硅膜之前，可以在含有氧和氯化氢或含氯烃的等离子体气氛中处理硅区域。 在低温下得到氧化硅膜，在半导体器件中作为栅极绝缘膜具有高的可靠性。
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公开(公告)号：US4959533A
公开(公告)日：1990-09-25
申请号：US259522
申请日：1988-10-18
申请人： Shunpei Yamazaki , Takeshi Fukada , Mitsunori Sakama , Hisato Shinohara , Nobumitsu Amachi , Naoya Sakamoto , Takashi Inuzima
发明人： Shunpei Yamazaki , Takeshi Fukada , Mitsunori Sakama , Hisato Shinohara , Nobumitsu Amachi , Naoya Sakamoto , Takashi Inuzima
IPC分类号： H01L27/146 , H04N1/031
CPC分类号： H04N1/0316 , H01L27/14623 , H01L27/14665 , H04N1/0313
摘要： An improved image sensor is described. The sensor includes a photosensitive semiconductor device comprises a glass substrate, a light blocking electrode formed on the glass substrate, a photosensitive semiconductor film formed on the electrode, a transparent electrode. A light window is opened through the semiconductor device. On the light path including the light window, an uneven interface is formed in order that light rays incident on the sensor is modified and reachs the photosensitive semiconductor after reflection on an original.
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10.发明授权APCVD method of forming silicon oxide using an organic silane, oxidizing agent, and catalyst-formed hydrogen radical 失效使用有机硅烷，氧化剂和催化剂形成的氢根形成氧化硅的APCVD方法公开(公告)号：US06323142B1
公开(公告)日：2001-11-27
申请号：US08706666
申请日：1996-09-06
IPC分类号： H01L2100
CPC分类号： H01L21/02126 , C03C17/245 , C03C2218/1525 , C03C2218/153 , C23C16/402 , H01L21/02131 , H01L21/0214 , H01L21/02164 , H01L21/02211 , H01L21/02216 , H01L21/02271 , H01L21/02274 , H01L21/31612
摘要： In forming various types of insulating films in manufacture of a semiconductor device, carbon is gasified into CHx, COH etc. during film formation by adding active hydrogen and nitrogen oxide to reduce the carbon content during the film formation, and the effect of blocking impurities such as alkali metals is improved.
摘要翻译： 在半导体器件的制造中形成各种类型的绝缘膜时，通过添加活性氢和氮氧化物在成膜期间将碳气化到CHx，COH等中以降低成膜期间的碳含量，以及将杂质 因为碱金属得到改善。
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