Abstract:
The present invention provides a temporary carrier bonding and detaching process. A first surface of a semiconductor wafer is mounted on a first carrier by a first adhesive layer, and a first isolation coating disposed between the first adhesive layer and the first carrier. Then, a second carrier is mounted on the second surface of the semiconductor wafer. The first carrier is detached. Then, the first surface of the semiconductor wafer is mounted on a film frame. The second carrier is detached. The method of the present invention utilizes the second carrier to support and protect the semiconductor wafer, after which the first carrier is detached. Therefore, the semiconductor wafer will not be damaged or broken, thereby improving the yield rate of the semiconductor process. Furthermore, the simplicity of the detaching method for the first carrier allows for improvement in efficiency of the semiconductor process.
Abstract:
The present invention relates to a method for forming a via in a substrate and a substrate with a via. The method includes the following steps: (a) providing a substrate having a first surface and a second surface; (b) forming a groove that has a side wall and a bottom wall on the first surface of the substrate; (c) forming a conductive metal on the side wall and the bottom wall of the groove so as to form a central groove; (d) forming an annular groove that surrounds the conductive metal on the first surface of the substrate; (e) forming an insulating material in the central groove and the annular groove; and (f) removing part of the second surface of the substrate to expose the conductive metal and the insulating material.
Abstract:
The present invention relates to a chip having a bump and a package having the same. The chip includes a chip body, at least one via, a passivation layer, an under ball metal layer and at least one bump. The via penetrates the chip body, and is exposed to a surface of the chip body. The passivation layer is disposed on the surface of the chip body, and the passivation layer has at least one opening. The opening exposes the via. The under ball metal layer is disposed in the opening of the passivation layer, and is connected to the via. The bump is disposed on the under ball metal layer, and includes a first metal layer, a second metal layer and a third metal layer. The first metal layer is disposed on the under ball metal layer. The second metal layer is disposed on the first metal layer. The third metal layer is disposed on the second metal layer. As the bumps can connect two chips, the chip is stackable, and so the density of the product is increased while the size of the product is reduced.
Abstract:
A method for manufacturing a microelectromechanical system package is provided. A plurality of cavities is first formed on a surface of a silicon wafer. The surface of the silicon wafer is then bonded to the microelectromechanical system wafer in such a manner that the active areas of the chips on the microelectromechanical system wafer are corresponding to the cavities on the silicon wafer. The structure assembly of the two wafers is finally singulated to form individual microelectromechanical system chips whose active areas are covered by the cavities. In this way, the profile of the microelectromechanical system package may be reduced accordingly.
Abstract:
A method for marking chip scale packages at the wafer level is provided. First, a positioning step is performed to determine the position of a plurality of semi-finished chip scale packages formed on a wafer. Each of the semi-finished chip scale package includes a plurality of terminals for making external electrical connections and each die has a plurality of bonding pads on an active surface thereof. The bonding pads are electrically connected to the respective terminals wherein a backside surface of the die is exposed from a surface of the respective semi-finished chip scale package. The exposed backside surface of the die is then marked by ink-jet printing. Afterward, the ink marks on the dice are cured. Finally, the wafer is diced to obtain a plurality of separated chip scale packages.
Abstract:
The present invention relates to a semiconductor device package, comprising a carrier, a first semiconductor device, a second semiconductor device, a plurality of conductive elements, a pre-mold and a lid. The first semiconductor device is electrically connected to the carrier. The second semiconductor device is disposed above the first semiconductor device. The conductive elements are used for electrically connecting the second semiconductor device and the carrier. The pre-mold and the carrier form an accommodating space for accommodating the first semiconductor device, the second semiconductor device and the conductive elements. The lid is adhered to the pre-mold for covering the opening of the pre-mold. As a result, the pre-mold is formed by molding, the manufacture process of the present invention is simpler than that of the conventional semiconductor device package.
Abstract:
A method and package for packaging an image sensor die utilizes a substrate having a concave space and an opening to connect the image sensor die with the substrate by SMT method. This method can reduce the manufacturing process of packaging the image sensor. The packaging method comprises providing a wafer having a plurality of image sensors, sawing the wafer to form a plurality of dies with a single image sensor, electrically connecting the die having the image sensor with a substrate, the substrate comprising a concave space and an opening, a plurality of solder pads disposed in the concave space for electrically connecting the die having an image sensor, and a plurality of input/output solder pads on the same side of the substrate for connecting to an external element, and filling a transparent adhesive into the opening of the substrate.
Abstract:
A method for forming an underfill layer on a bumped wafer is disclosed. A film is provided wherein the film includes a base layer, a removable layer and the underfill layer. The film is disposed on a bump wafer and then pressing the film under heating is performed to have the bumps of the wafer embedded in the underfill layer. Then, the removable layer with base film attached thereto is removed, so the underfill layer well encloses the bumps of the wafer and is easily separated from the base film layer and the removable layer without damaging the bumps formed on the wafer.
Abstract:
A chip-scale semiconductor package mainly includes a semiconductor chip, a substrate and a package body. Said chip is attached onto said substrate by an adhesive layer. Said chip has a plurality of bonding pads formed thereon. Said adhesive layer has an aperture corresponding to the bonding pads of said chip such that the bonding pads can be exposed within an aperture. Said substrate has several through-holes respectively corresponding to the bonding pads of said chip and parts of the area around the edge of said chip for dispensing of encapsulant after the soldering of leads of said substrate to the bonding pads of said chip. The encapsulant dispensed into the through-holes can flow from the surface of said chip to the edge thereof. Said package body has one portion provided within the through-hole of said substrate and another portion provided around the edge of said chip whereby encapsulation process is accomplished without having to turn the whole semiconductor package device.
Abstract:
The present invention relates to a method for forming a via in a substrate and a substrate with a via. The method includes the following steps: (a) providing a substrate; (b) forming a groove on a first surface of the substrate; (c) forming a conductive metal on the groove so as to form a central groove; (d) forming an annular groove that surrounds the conductive metal; (e) forming an insulating material in the central groove and the annular; groove; and (f) removing part of the substrate to expose the conductive metal and the insulating material.