Gamma ray detector modules
    1.
    发明授权
    Gamma ray detector modules 失效
    伽马射线探测器模块

    公开(公告)号:US07223981B1

    公开(公告)日:2007-05-29

    申请号:US10725442

    申请日:2003-12-03

    Abstract: A radiation detector assembly has a semiconductor detector array substrate of CdZnTe or CdTe, having a plurality of detector cell pads on a first surface thereof, the pads having a contact metallization and a solder barrier metallization. An interposer card has planar dimensions no larger than planar dimensions of the semiconductor detector array substrate, a plurality of interconnect pads on a first surface thereof, at least one readout semiconductor chip and at least one connector on a second surface thereof, each having planar dimensions no larger than the planar dimensions of the interposer card. Solder columns extend from contacts on the interposer first surface to the plurality of pads on the semiconductor detector array substrate first surface, the solder columns having at least one solder having a melting point or liquidus less than 120 degrees C. An encapsulant is disposed between the interposer circuit card first surface and the semiconductor detector array substrate first surface, encapsulating the solder columns, the encapsulant curing at a temperature no greater than 120 degrees C.

    Abstract translation: 辐射检测器组件具有CdZnTe或CdTe的半导体检测器阵列基板,其在其第一表面上具有多个检测器单元焊盘,该焊盘具有接触金属化和阻焊金属化。 插入卡具有不大于半导体检测器阵列基板的平面尺寸的平面尺寸,在其第一表面上的多个互连焊盘,至少一个读出半导体芯片和在其第二表面上的至少一个连接器,每个具有平面尺寸 不大于插入卡的平面尺寸。 焊料柱从插入器第一表面上的触点延伸到半导体检测器阵列基板第一表面上的多个焊盘,焊料柱具有至少一种焊点,其熔点或液相线小于120℃。密封剂设置在 内插器电路卡第一表面和半导体检测器阵列基板第一表面,封装焊料柱,密封剂固化在不超过120摄氏度的温度。

    Gamma ray detector modules
    5.
    发明授权
    Gamma ray detector modules 有权
    伽马射线探测器模块

    公开(公告)号:US07531809B2

    公开(公告)日:2009-05-12

    申请号:US11783505

    申请日:2007-04-10

    Abstract: A radiation detector assembly has a semiconductor detector array substrate of CdZnTe or CdTe, having a plurality of detector cell pads on a first surface thereof, the pads having a contact metallization and a solder barrier metallization. An interposer card has planar dimensions no larger than planar dimensions of the semiconductor detector array substrate, a plurality of interconnect pads on a first surface thereof, at least one readout semiconductor chip and at least one connector on a second surface thereof, each having planar dimensions no larger than the planar dimensions of the interposer card. Solder columns extend from contacts on the interposer first surface to the plurality of pads on the semiconductor detector array substrate first surface, the solder columns having at least one solder having a melting point or liquidus less than 120 degrees C. An encapsulant is disposed between the interposer circuit card first surface and the semiconductor detector array substrate first surface, encapsulating the solder columns, the encapsulant curing at a temperature no greater than 120 degrees C.

    Abstract translation: 辐射检测器组件具有CdZnTe或CdTe的半导体检测器阵列基板,其在其第一表面上具有多个检测器单元焊盘,该焊盘具有接触金属化和阻焊金属化。 插入卡具有不大于半导体检测器阵列基板的平面尺寸的平面尺寸,在其第一表面上的多个互连焊盘,至少一个读出半导体芯片和在其第二表面上的至少一个连接器,每个具有平面尺寸 不大于插入卡的平面尺寸。 焊料柱从插入器第一表面上的触点延伸到半导体检测器阵列基板第一表面上的多个焊盘,焊料柱具有至少一种焊点,其熔点或液相线小于120℃。密封剂设置在 内插器电路卡第一表面和半导体检测器阵列基板第一表面,封装焊料柱,密封剂固化在不超过120摄氏度的温度。

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