公开(公告)号：US20120199989A1

公开(公告)日：2012-08-09

申请号：US13431457

申请日：2012-03-27

申请人： Nicola Schulz ,  Samuel Hartmann

发明人： Nicola Schulz ,  Samuel Hartmann

IPC分类号： H01L23/48 ,  H01L21/50

CPC分类号： H01L24/01 ,  H01L23/4985 ,  H01L24/37 ,  H01L24/40 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L25/072 ,  H01L25/18 ,  H01L2224/37599 ,  H01L2224/40137 ,  H01L2224/40139 ,  H01L2224/48091 ,  H01L2224/48195 ,  H01L2224/48229 ,  H01L2224/4846 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/0102 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/15787 ,  H01L2924/19107 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2224/37099

摘要： Exemplary embodiments of the disclosure are directed to a circuit arrangement in which a power functional device and a conductor element are mounted and a method of manufacturing the same. The arrangement includes a substrate, a wiring layer provided on the substrate and electrically connected to the functional device and to the conductor element and an intermediate electric contact device. The intermediate electric contact device is mounted on the wiring layer to provide on the side opposite to the wiring layer a contact region for contacting the conductor element. The conductor element is contacting the intermediate electric contact device in the contact region which is opposite to an area, in which the electric contact device is fixed to the wiring layer.

摘要翻译： 本公开的示例性实施例涉及其中安装功率功能装置和导体元件的电路装置及其制造方法。 该布置包括基板，设置在基板上并电连接到功能元件和导体元件的布线层和中间电接触器件。 中间电接触装置安装在布线层上，以在与布线层相对的一侧提供用于接触导体元件的接触区域。 所述导体元件与所述接触区域接触，所述接触区域与所述电接触器件固定到所述布线层的区域相对。

公开(公告)号：US08749051B2

公开(公告)日：2014-06-10

申请号：US13367987

申请日：2012-02-07

申请人： Slavo Kicin ,  Nicola Schulz ,  Munaf Rahimo ,  Raffael Schnell

发明人： Slavo Kicin ,  Nicola Schulz ,  Munaf Rahimo ,  Raffael Schnell

IPC分类号： H01L23/10

CPC分类号： H01L23/367 ,  H01L24/48 ,  H01L25/0655 ,  H01L25/072 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device which provides a small and simple design with efficient cooling. A first electrically conducting cooling element is in contact with first electrodes of semiconductor elements for forwarding a heat load from the semiconductor elements and for electrically connecting the first electrodes of the semiconductor elements to an external apparatus. A second electrically conducting cooling element is in contact with second electrodes of the semiconductor elements for forwarding a heat load from the semiconductor elements and for electrically connecting the second electrodes of the semiconductor elements to an external apparatus. The semiconductor device includes an interface which is electrically connected to gates of the semiconductor elements for external control of respective states of the semiconductor elements.

摘要翻译： 一种半导体器件，提供小而简单的设计，有效的冷却。 第一导电冷却元件与半导体元件的第一电极接触，用于从半导体元件传递热负载并将半导体元件的第一电极电连接到外部设备。 第二导电冷却元件与半导体元件的第二电极接触，用于从半导体元件传送热负荷并将半导体元件的第二电极电连接到外部设备。 半导体器件包括电连接到半导体元件的栅极的接口，用于半导体元件的各自状态的外部控制。

公开(公告)号：US20120199954A1

公开(公告)日：2012-08-09

申请号：US13367987

申请日：2012-02-07

申请人： Slavo KICIN ,  Nicola Schulz ,  Munaf Rahimo ,  Raffael Schnell

发明人： Slavo KICIN ,  Nicola Schulz ,  Munaf Rahimo ,  Raffael Schnell

IPC分类号： H01L29/02

CPC分类号： H01L23/367 ,  H01L24/48 ,  H01L25/0655 ,  H01L25/072 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2924/00014 ,  H01L2924/10253 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： A semiconductor device which provides a small and simple design with efficient cooling. A first electrically conducting cooling element is in contact with first electrodes of semiconductor elements for forwarding a heat load from the semiconductor elements and for electrically connecting the first electrodes of the semiconductor elements to an external apparatus. A second electrically conducting cooling element is in contact with second electrodes of the semiconductor elements for forwarding a heat load from the semiconductor elements and for electrically connecting the second electrodes of the semiconductor elements to an external apparatus. The semiconductor device includes an interface which is electrically connected to gates of the semiconductor elements for external control of respective states of the semiconductor elements.

摘要翻译： 一种半导体器件，提供小而简单的设计，有效的冷却。 第一导电冷却元件与半导体元件的第一电极接触，用于从半导体元件传递热负载并将半导体元件的第一电极电连接到外部设备。 第二导电冷却元件与半导体元件的第二电极接触，用于从半导体元件传送热负荷并将半导体元件的第二电极电连接到外部设备。 半导体器件包括电连接到半导体元件的栅极的接口，用于半导体元件的各自状态的外部控制。

公开(公告)号：US08811442B2

公开(公告)日：2014-08-19

申请号：US12855767

申请日：2010-08-13

申请人： Nicola Schulz ,  Marcel Rattunde ,  Joachim Wagner ,  Benno Rösener

发明人： Nicola Schulz ,  Marcel Rattunde ,  Joachim Wagner ,  Benno Rösener

IPC分类号： H01S5/323

CPC分类号： H01S5/041 ,  B82Y20/00 ,  H01S5/3407 ,  H01S5/34306 ,  H01S5/34346

摘要： The present invention relates to a semiconductor laser having at least one quantum film in which electron hole pairs can be recombined, having at least two barrier layers between which respectively one of the at least one quantum films is disposed adjacently to these, directly in a planar manner or via respectively one intermediate film, and also having a pump device, the barrier layers having or consisting of AlzGa1-zAsySb1-y, with y greater than or equal to zero and less than or equal to one and z less than or equal to one and greater than 0.4, and/or having or consisting of AlzGauInvAsySb1-y, with z+u+v=1 and z greater than 0.25, the electron hole pairs being able to be produced directly in the quantum film with the pump device.

摘要翻译： 本发明涉及一种具有至少一个量子膜的半导体激光器，其中电子空穴对可以被重新组合，其中至少两个阻挡层之间，其中至少一个量子膜中的至少一个与其相邻设置，直接在平面 方式或通过分别一个中间膜，并且还具有泵装置，所述阻挡层具有或由Al z Ga 1-z As y Sb 1-y组成，y大于或等于0且小于或等于1且z小于或等于 1和大于0.4，和/或具有或由AlzGauInvAsySb1-y组成，其中z + u + v = 1和z大于0.25，电子空穴对能够直接用泵装置在量子膜中产生。

公开(公告)号：US20110013658A1

公开(公告)日：2011-01-20

申请号：US12855767

申请日：2010-08-13

申请人： Nicola Schulz ,  Marcel Rattunde ,  Joachim Wagner ,  Benno Rösener

发明人： Nicola Schulz ,  Marcel Rattunde ,  Joachim Wagner ,  Benno Rösener

IPC分类号： H01S5/343

CPC分类号： H01S5/041 ,  B82Y20/00 ,  H01S5/3407 ,  H01S5/34306 ,  H01S5/34346

摘要： The present invention relates to a semiconductor laser having at least one quantum film in which electron hole pairs can be recombined, having at least two barrier layers between which respectively one of the at least one quantum films is disposed adjacently to these, directly in a planar manner or via respectively one intermediate film, and also having a pump device, the barrier layers having or consisting of AlzGa1-zAsySbi-y, with y greater than or equal to zero and less than or equal to one and z less than or equal to one and greater than 0.4, and/or having or consisting of AlzGauInvAsySb1-y, with z+u+v=1 and z greater than 0.25, the electron hole pairs being able to be produced directly in the quantum film with the pump device.

摘要翻译： 本发明涉及一种具有至少一个量子膜的半导体激光器，其中电子空穴对可以被重新组合，其中至少两个阻挡层之间，其中至少一个量子膜中的至少一个与其相邻设置，直接在平面 方式或经由一个中间膜，并且还具有泵装置，所述阻挡层具有或由AlzGa1-zAsySbi-y组成，y大于或等于0且小于或等于1且z小于或等于 1和大于0.4，和/或具有或由AlzGauInvAsySb1-y组成，其中z + u + v = 1和z大于0.25，电子空穴对能够直接用泵装置在量子膜中产生。

公开(公告)号：US20120211799A1

公开(公告)日：2012-08-23

申请号：US13399410

申请日：2012-02-17

申请人： Chunlei LIU ,  Nicola SCHULZ ,  Slavo KICIN

发明人： Chunlei LIU ,  Nicola SCHULZ ,  Slavo KICIN

IPC分类号： H01L29/739 ,  H01L21/331

CPC分类号： H01L25/072 ,  H01L23/3735 ,  H01L23/492 ,  H01L23/62 ,  H01L24/29 ,  H01L24/37 ,  H01L24/40 ,  H01L24/83 ,  H01L2224/03505 ,  H01L2224/05124 ,  H01L2224/05624 ,  H01L2224/0568 ,  H01L2224/29 ,  H01L2224/29101 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29298 ,  H01L2224/32506 ,  H01L2224/37147 ,  H01L2224/3718 ,  H01L2224/40095 ,  H01L2224/40225 ,  H01L2224/40227 ,  H01L2224/83805 ,  H01L2224/8384 ,  H01L2224/84424 ,  H01L2224/84439 ,  H01L2224/84444 ,  H01L2224/84447 ,  H01L2224/8448 ,  H01L2224/8484 ,  H01L2224/85205 ,  H01L2224/92246 ,  H01L2924/00011 ,  H01L2924/00013 ,  H01L2924/01004 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/10253 ,  H01L2924/1301 ,  H01L2924/1305 ,  H01L2924/13055 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/15747 ,  H01L2924/15787 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/3512 ,  H01L2224/29099 ,  H01L2224/29199 ,  H01L2224/29299 ,  H01L2224/2929 ,  H01L2224/83205

摘要： A power semiconductor module including a semiconductor device (e.g., an insulated gate bipolar transistor (IGBT), a reverse conductive (RC IGBT), or a bi-mode insulated gate transistor (BIGT)) with an emitter electrode and a collector electrode is provided. An electrically conductive upper layer is sintered to the emitter electrode. The upper layer is capable of forming an eutecticum with the semiconductor of the semiconductor device, and has a coefficient of thermal expansion which differs from the coefficient of thermal expansion of the semiconductor in a range of ≦250%, for example ≦50%. An electrically conductive base plate is sintered to the collector electrode. The semiconductor module includes an electrically conductive area which is electrically isolated from the base plate and connected to the upper layer via a direct electrical connection. The semiconductor module is easy to prepare, has an improved reliability and exhibits short circuit failure mode capacity.

摘要翻译： 提供了具有发射极和集电极的半导体装置（例如，绝缘栅双极晶体管（IGBT），反向导通（RC IGBT）或双模绝缘栅晶体管（BIGT））的功率半导体模块 。 将导电上层烧结到发射极。 上层能够与半导体器件的半导体形成共晶体，并且具有与半导体的热膨胀系数不同的范围内的热膨胀系数，例如≤100％，例如50％ 。 将导电基板烧结到集电极。 半导体模块包括导电区域，其与基板电隔离并通过直接电连接连接到上层。 半导体模块易于准备，具有改进的可靠性并具有短路故障模式容量。